CN101630692B - 沟道层和包括该沟道层的晶体管 - Google Patents

沟道层和包括该沟道层的晶体管 Download PDF

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Publication number
CN101630692B
CN101630692B CN200910140008.7A CN200910140008A CN101630692B CN 101630692 B CN101630692 B CN 101630692B CN 200910140008 A CN200910140008 A CN 200910140008A CN 101630692 B CN101630692 B CN 101630692B
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China
Prior art keywords
transistor
grid
layer
upper strata
lower floor
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Chinese (zh)
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CN101630692A (zh
Inventor
金善日
宋利宪
金昌桢
朴宰彻
金尚昱
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
CN200910140008.7A 2008-07-14 2009-07-14 沟道层和包括该沟道层的晶体管 Active CN101630692B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20080068344 2008-07-14
KR1020080068344 2008-07-14
KR10-2008-0068344 2008-07-14
KR1020090033846A KR101603775B1 (ko) 2008-07-14 2009-04-17 채널층 및 그를 포함하는 트랜지스터
KR1020090033846 2009-04-17
KR10-2009-0033846 2009-04-17

Publications (2)

Publication Number Publication Date
CN101630692A CN101630692A (zh) 2010-01-20
CN101630692B true CN101630692B (zh) 2016-03-02

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KR (1) KR101603775B1 (ko)
CN (1) CN101630692B (ko)

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US9721825B2 (en) 2008-12-02 2017-08-01 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
US9601530B2 (en) 2008-12-02 2017-03-21 Arizona Board Of Regents, A Body Corporated Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
SG176601A1 (en) 2009-05-29 2012-01-30 Univ Arizona Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
WO2012021196A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method for manufacturing electronic devices and electronic devices thereof
WO2012021197A2 (en) 2010-05-21 2012-02-16 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
KR20110139394A (ko) * 2010-06-23 2011-12-29 주성엔지니어링(주) 박막 트랜지스터 및 그 제조 방법
KR101778224B1 (ko) 2010-10-12 2017-09-15 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5977569B2 (ja) * 2011-04-22 2016-08-24 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102969362B (zh) * 2011-09-01 2016-03-30 中国科学院微电子研究所 高稳定性非晶态金属氧化物tft器件
CN102403363A (zh) * 2011-10-27 2012-04-04 华南理工大学 双层氧化物薄膜晶体管及其制备方法
KR101308809B1 (ko) * 2012-01-20 2013-09-13 경희대학교 산학협력단 산화물 반도체 박막 트랜지스터 제조방법 및 이를 이용한 능동구동 디스플레이 장치, 능동구동 센서장치
CN103247668A (zh) * 2012-02-06 2013-08-14 鸿富锦精密工业（深圳）有限公司 薄膜晶体管
KR101249091B1 (ko) * 2012-02-28 2013-04-02 한양대학교 산학협력단 향상된 전하 이동도를 가지는 박막 트랜지스터 및 이의 제조방법
KR102330543B1 (ko) 2012-04-13 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9356156B2 (en) * 2013-05-24 2016-05-31 Cbrite Inc. Stable high mobility MOTFT and fabrication at low temperature
KR20150025621A (ko) * 2013-08-29 2015-03-11 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
CN103500764B (zh) 2013-10-21 2016-03-30 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示器
WO2015079756A1 (ja) * 2013-11-26 2015-06-04 シャープ株式会社 半導体装置
WO2015175353A1 (en) 2014-05-13 2015-11-19 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2017034645A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
KR101878161B1 (ko) * 2015-02-12 2018-07-13 주성엔지니어링(주) 박막 트랜지스터 및 그 제조방법
CN108886060A (zh) * 2016-04-04 2018-11-23 株式会社神户制钢所 薄膜晶体管
CN107516634A (zh) * 2016-06-15 2017-12-26 中华映管股份有限公司 薄膜晶体管及其制造方法
CN106298957B (zh) * 2016-09-28 2020-06-30 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置
WO2018123660A1 (ja) * 2016-12-27 2018-07-05 シャープ株式会社 酸化物半導体ｔｆｔを備えた半導体装置
CN107749422A (zh) * 2017-09-21 2018-03-02 信利（惠州）智能显示有限公司 氧化物半导体薄膜晶体管
US11217698B2 (en) 2020-05-26 2022-01-04 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method of manufacturing a thin film transistor
CN111613664A (zh) * 2020-05-26 2020-09-01 深圳市华星光电半导体显示技术有限公司 薄膜晶体管及其制备方法、显示面板
CN113809182B (zh) * 2020-06-16 2023-09-08 京东方科技集团股份有限公司 金属氧化物薄膜晶体管及其制备方法、阵列基板
CN112002762B (zh) * 2020-07-30 2023-03-14 郑州大学 一种梯度沟道掺氮氧化锌薄膜晶体管及其制备方法

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CN1906770A (zh) * 2004-01-23 2007-01-31 惠普开发有限公司 包括具有掺杂部分的沉积沟道区的晶体管

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JP2003298062A (ja) * 2002-03-29 2003-10-17 Sharp Corp 薄膜トランジスタ及びその製造方法
JP4850457B2 (ja) * 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
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CN101630692A (zh) 2010-01-20
KR20100007703A (ko) 2010-01-22

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