CN101615589A - 半导体器件的制造方法、半导体器件的制造设备及销 - Google Patents
半导体器件的制造方法、半导体器件的制造设备及销 Download PDFInfo
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Abstract
一种半导体器件的制造方法、半导体器件的制造设备及销,该半导体器件的制造方法包括:在将印制基板压在基台的真空吸附表面上的状态下,使印制基板真空吸附在真空吸附表面上;通过将销既插入到在该印制基板中形成的通孔又插入到在该基台中形成的孔中,使该印制基板暂时固定于该基台上;及解除真空吸附。
Description
技术领域
在此论述的实施例涉及一种半导体器件的制造方法、半导体器件的制造设备及销。
背景技术
传统地,已知有一种用于将半导体芯片安装在印制基板(下文称为基板)上的安装方法。在将半导体芯片安装在基板上的过程中,为了确保基板与半导体芯片之间的连接强度和定位精度,优选的是,在使基板的翘曲(warpage)得到校正的状态下安装半导体芯片。作为用于校正基板翘曲的技术,一种可以想到的方法为通过真空吸附将基板吸附在板状基台(stage)上,以校正翘曲。此外,如其他技术,将其上并未安装半导体芯片的基板压在基台上,或者将具有粘性的胶状材料涂覆在基台上,以便利用粘合力校正基板的翘曲。必须将基板翘曲的校正一直进行到底部填充材料硬化为止,所述底部填充材料被填充在基板与安装在基板上的半导体芯片之间。
然而,在通过真空吸附校正基板的情况下,由于依赖于基板的厚度,抵抗翘曲校正的回复力变得较大,因此可能需要较大的吸附力。在此情况下,由于需要具有强吸附力的真空泵,因此增加了制造设备的成本。为了确保强吸附力,对于在基台上形成的真空孔的数量及布局需要有巧妙的设计。这样也会增加基台的成本。
在另一种情况下,即,通过将基板压在基台上来校正翘曲的情况下,在基板与用于对基板施压的施压件形成接触的接触区域不能安装半导体芯片。这就使基板的安装区域变得较小,因此增加了基板的成本。
在通过粘合力校正翘曲的情况下,需要定期地维护胶状材料,以防止粘合力减小,因此增加了成本。
发明内容
为此,实施例的一个方面的目的在于提供一种半导体器件的制造方法、半导体器件的制造设备及销,由此以低成本防止印制基板的翘曲。
根据实施例的一个方面,提供一种半导体器件的制造方法,其包括:在将印制基板压在基台的真空吸附表面上的状态下,使印制基板真空吸附在所述真空吸附表面上;通过将销共同地(commonly)插入到在印制基板中形成的通孔和在基台中形成的孔中,使印制基板暂时固定于基台上;及解除真空吸附。
因此,能够以低成本校正该印制基板的翘曲,以使该印制基板平整地成形(服贴地成形)(flatly shape)在基台上。
借助于权利要求书中所特别指出的元件及组合,将认识并得出本实施例的目的及优点。
应当理解的是,前述的一般说明及以下的详细说明均为示例性和说明性的,而非对实施例的限制,特此声明。
附图说明
图1为一种用于制造半导体器件的半导体器件制造设备的示意图;
图2A和图2B为基板和基台的立体图;
图3A和图3B为将基板吸附在基台上的过程的说明性视图;
图4A和图4B为将基板吸附在基台上的过程的说明性视图;
图5A和图5B为通过销将基板暂时固定在基台上的过程的说明性视图;
图6A至图6C为销的说明性视图;
图7A和图7B为销的插入状态的说明性视图;
图8A为将半导体芯片安装于基板上的过程的说明性视图,图8B为填充底部填充材料的过程的说明性视图;
图9为热硬化底部填充材料的过程的说明性视图;
图10A和图10B为移除销的过程的说明性视图;及
图11为半导体器件的立体图。
具体实施方式
以下将对一实施例进行说明。
图1为用于制造半导体器件的半导体器件制造设备1的示意图。半导体器件制造设备1包括:校正下述基板10的翘曲的校正机构部2;将半导体芯片18安装于基板10上的安装机构部3;涂覆底部填充材料的底部填充涂覆机构部4;及硬化所述底部填充材料的热固化烤箱5。基台20通过轨道8传送至各部分。
图2A和图2B为基板10和基台20的立体图。基板10为由具有绝缘性能的玻璃环氧树脂制成的印制基板。基板10可由陶瓷或玻璃聚酰亚胺树脂(glass polyimide resin)制成。基板10的长度约为150mm,宽度约为80mm,厚度约为0.3mm。然而,并不限制基板10的尺寸。此外,基板10设有多个通孔12,以将基板10平整地成形在基台20上。基板10中设有六个通孔12。此外,在基板10的一个表面上,以栅格的方式设有用于安装多个下述半导体芯片的多个安装区域14。通孔12形成为避开多个安装区域14或形成在这些安装区域14之间。
基台20能够将基板10传送至校正机构部2、安装机构部3、底部填充涂覆机构部4及热固化烤箱5。基台20为板状。并且,在基台20中形成有六个通孔22。这些通孔22的位置分别与通孔12的位置相对应。此外,通孔22贯穿基台20。然而,可使用未贯穿基台20的盲孔。
接下来将说明用于制造半导体器件的方法。图3A至图11为用于制造半导体器件的方法的说明性视图。
首先说明将基板10压在基台20的真空吸附表面上以吸附基板10的过程。如图3A所示,基板10设置在校正机构部2中的基台20的上表面上。如图3A所示,基板10发生翘曲。通过使用成像相机进行图像处理实现基板10与基台20对齐。此外,对齐方法并不以上述方法为限。例如,可以使在基台20上设置的多个对齐突出部与在基板10中设置的多个切口或孔接合。
校正机构部2设有施压头30。该施压头30由块状金属制成。参考图3A和图3B,基板10通过施压头30而被压在基台20上。基板10通过压力在基台20上平整地成形,以校正翘曲。
在由施压头30对基板10施压的状态下,致动真空泵40。真空泵40经由软管(未示出)或类似物与基台20相连通。通过致动真空泵40,基板10真空吸附在基台20上。
图4A为真空吸附的说明性视图,并示出了基台20的截面结构。在基台20中设有相互连通的抽吸通道28和抽吸孔29。该抽吸孔29穿进基台20的上表面。此外,在图2B及其他附图中省略了抽吸孔29。抽吸孔29的直径小于通孔22的直径。抽吸通道28和抽吸孔29通过真空泵40的致动而进入真空状态。与之相应产生的吸附力使得基板10被吸附在基台20上。因此,基台20的上表面与真空吸附表面相对应。此外,基台20可设有吸附沟槽来代替该吸附孔。
真空泵40被持续地致动,以便施压头30从基板10上退去。由于真空泵40即使在施压头30退去时也被致动,所以基板10被保持吸附在基台20上。因此,在校正翘曲的状态下,基板10被吸附且保持在基台20上。
真空泵40的吸附力被设定为使翘曲的基板10并不仅仅通过吸附力而平整地成形在基台20上。换言之,基板10由施压头30压在基台20上,以便被强制地且平整地成形在基台20上。通过在此状态下致动真空泵40,基板10被吸附在基台20上。如上所述,可使用具有弱吸附力的真空泵40。
另外,由于施压头30校正基板10,因此在不必设计抽吸道28的形状、抽吸孔29的数量及抽吸孔29的位置的情况下,基板10就能够被吸附在基台20上,以便提高真空泵40的吸附力。这样可降低基台20的制造成本。
接下来说明通过销50将基板10暂时固定在基台20上的过程。如图5A所示,销50通过插移手(插移件,inserting and removing member)60插入到通孔12中。此时,销50既被插入到通孔12中又被插入到通孔22中。如图5B所示,六个销50被插入,以此将基板10暂时固定在基台20上。此外,校正机构部2设有能够上下移动的插移手60。
图6A和图6B为销50的立体图。图6C为销50的局部截面图。销50包括本体部51、止挡部53及凸缘部55。该本体部51呈圆柱形。该止挡部53形成在本体部51的中途部分处,且在径向上大于本体部51。该凸缘部55形成在本体部51的上端。凸缘部55包括沿着轴向经由一阶状部设置的圆盘部55a、55b。各圆盘部55a、55b均具有基本相同的形状并大于其他任何部分。并且,本体部51的直径约为1mm,销50的整体长度约为8mm。
如图6C所示,销50的芯部材料50a由非弹性材料制成。具体地,芯部材料50a由具有刚性的金属材料(如不锈钢)制成。此外,芯部材料50a并不限于由金属材料制成,其可由具有刚性的工程塑料制成。通过包覆芯部材料50a而在芯部材料50a的外表面形成包覆层50b。包覆层50b由具有耐热性的弹性材料制成。特别地,包覆层50b由橡胶(如硅胶或氟橡胶)制成。此外,由于基板10和销50均在硬化下述底部填料的过程中受热,因此可使用具有耐热性的橡胶。
现在说明销50的插入情况。图7A和图7B为销50的插入情况的说明性视图。图7A示出了插入销50之前的基板10和基台20的截面图。图7B示出了插入销50时的基板10和基台20的截面图。
如图7A所示,通孔12的直径稍大于通孔22的直径。这是因为考虑到了基板10和基台20的位置误差。如果通孔12与通孔22的直径相类似,则可能难以依赖该位置误差来插入销50。
如图7B所示,销50被共同地插入到通孔12和通孔22中,以此使得本体部51被插入到通孔12和通孔22中。本体部51的直径小于通孔12和通孔22的直径。此时,由凸缘部55限定插入位置。换言之,圆盘部55b紧靠通孔12的外围部分,从而沿轴向限定销50的插入位置。也就是说,圆盘部55b的直径大于通孔12的直径。而且,止挡部53的直径稍大于通孔22的直径。
由于止挡部53的直径稍大于通孔22的直径,因此,当销50插入到通孔12和通孔22中时,止挡部53的包覆层50b略微受压。为此,通过包覆层50b的弹性回复力使止挡部53和通孔22固定。因此,销50被保持插入在通孔12和通孔22中。
包覆层50b为上述的具有弹性的橡胶,而芯部材料50a由具有刚性的材料制成。如果整个销50都由弹性材料如橡胶制成,那么在销50插入到通孔12和通孔22中时,滑动阻力会变得过大,以致使插入很可能变得困难。然而,如果整个销50都由金属或类似物制成,虽然便于插入到通孔12和通孔22中,但销50可能会从通孔12和通孔22移出。因此,通过在具有刚性的芯部材料50a的外表面上形成由弹性材料制成的包覆层50b,将便于销50的插入,并可防止销50的移除。
此外,插移手60抓取销50的凸缘部55,并将销50插入到通孔12和通孔22中。而且,当如下文所述地将销50移除时,插移手60抓取凸缘部55。凸缘部55起到限定插入深度的作用,还能便于插移手60的插入和移除操作。
此外,非优选的是,使用螺钉代替销50。在使用螺钉的情况下,将螺钉插入到基板的螺孔中会切削螺孔,因而可能产生碎屑。
接下来说明解除真空吸附的过程。在基板10由销50暂时固定在基台20上时,停止致动真空泵40。基板10被暂时固定在基台20上,由销50校正基板10的弯曲,即便在停止致动真空泵40,也不会导致基板10发生翘曲。
在此方式下,基板10被暂时固定在基台20上,由销50校正基板10的翘曲,以此可缩短真空泵40的致动周期。在不使用销50而仅通过致动真空泵40将基板10吸附在基台20上的情况下,真空泵40需要保持致动一直到热硬化下述的底部填充材料的过程之前。然而,如上所述,由于利用销50进行暂时固定,因而允许真空泵40尽早停止致动。这样可降低与致动真空泵40有关的成本。
并且,为了将真空泵40的致动保持到热硬化底部填充材料的过程之前,必须确保基台20与真空泵40的连接直到基台20到达热固化烤箱5。当持续确保这种连接时,用于此连接的机构十分复杂,从而导致制造设备的成本将会提高。然而,如上所述,真空泵40仅在基台20被传送到校正机构部2中时才被致动。由此,在安装机构部3、底部填充涂覆机构部4及热固化烤箱5中,无需将基板10真空吸附于基台20上。这样就不必设置用于这种真空吸附的装置。
接下来说明将半导体芯片18安装在基板10上的过程。图8A为安装过程的说明性视图。基台20被传送至安装机构部3,接着通过芯片安装头70将半导体芯片18安装在基板10的安装区域14上。安装机构部3设有芯片安装头70。芯片安装头70利用吸附力保持半导体芯片18。在半导体芯片18的安装过程中,设于安装区域14中的连接用电极(未示出)以及设于半导体芯片18中的焊料突点(未示出)被压合。在这种结合中,设置在基台20的下表面的加热器(未示出)被起动以加热整个基板10。安装机构部3设有加热器。当所有半导体芯片18均被安装时,停止加热器的操作。
接下来说明在基板10与半导体芯片18之间填充底部填充材料的过程。图8B为填充底部填充材料的过程的说明性视图。在将多个半导体芯片18安装在基板10上之后,基台20被传送至底部填充涂覆机构部4。底部填充涂覆机构部4设有填充喷嘴80。为液态树脂的底部填充材料通过填充喷嘴80填充到基板10与多个半导体芯片18之间。具体地,底部填充材料被注入到多个半导体芯片18之间的间隙中。在底部填充材料被填充到所有半导体芯片18与基板10之间后,基台20被传送至热固化烤箱5。
接下来说明热硬化底部填充材料的过程。图9为热硬化底部填充材料的过程的说明性视图。基台20被传送至热固化烤箱5。热固化烤箱5内的温度被设定为约200摄氏度至约250摄氏度。基板10在热固化烤箱5中放置达预定时期,以使底部填充材料热硬化。此外,销50与基板10一起受热。
接下来说明在底部填充材料硬化后移除销50的过程。图10A和图10B为移除销50的过程的说明性视图。在硬化底部填充材料后,基台20被传送至校正机构部2,并如图10A所示地通过插移手60将销50移除。与此同时,插移手60抓取凸缘部55,以将销50移除。图10B示出了移除了所有销50的基板10。
此后,为各个安装在基板10上的半导体芯片18切割基板10。在切割过程后,进行利用树脂密封半导体芯片18的模制工艺。如上所述,由此制成具有单个半导体芯片18和切割后的基板10a的半导体器件1a。
如上所述,能够通过销50校正基板10的翘曲。例如,当利用施压件将基板持续地压在基台上以校正翘曲时,半导体芯片不能安装在施压部与基板紧靠的接触部上。因此,安装区域变得较小,故成本增加。在具有粘合性能的胶状材料涂覆基台以利用其粘合力校正基板的翘曲的情况下,需要保持粘合力,因此使成本增加。如本实施例中所述,可确保安装区域,并可借助销50免去保持粘合力,从而能以低成本校正基板的翘曲。在此实施例中,说明了倒装芯片安装的示例。本发明并不限于上述示例。例如,可使用通常的印制基板,如SMT(表面安装技术)基板。
在此描述的所有示例及条件性语言旨在作为教导性目的,以帮助读者理解发明人为改进该技术而提供的发明及原理,且所有示例及条件性语言应被解释为并不限于这些特别说明的示例及条件内,而是对涉及高于或低于本发明的说明书的这些示例的概括。尽管已经详细地描述了本发明的实施例,但应当理解,在不背离本发明的精神和范围的情况下,可对此进行各种改变、替换及变更。
Claims (5)
1.一种半导体器件的制造方法,包括:
在将印制基板压在基台的真空吸附表面上的状态下,使所述印制基板真空吸附在所述真空吸附表面上;
通过将销既插入到在所述印制基板中形成的通孔中又插入到在所述基台中形成的孔中,使所述印制基板暂时固定于所述基台上;及
解除真空吸附。
2.根据权利要求1所述的半导体器件的制造方法,还包括:
在解除真空吸附后,将半导体芯片安装在所述印制基板上;
在所述印制基板与所述半导体芯片之间填充液态树脂;
硬化液态树脂;及
在液态树脂硬化后移除所述销。
3.一种半导体器件的制造设备,包括:
基台,其真空吸附印制基板;
施压件,其将所述印制基板压在所述基台上;及
插移件,其将销既插入到在所述印制基板中形成的孔中又插入到在所述基台中形成的孔中,并能将所述销移除。
4.一种销,用于在半导体器件的制造过程中,在半导体芯片安装至印制基板上之前,将所述印制基板平整地成形在基台上,所述销包括:
芯部,其由非弹性材料制成;及
包覆层,其包覆所述芯部且由具有耐热性的弹性材料制成。
5.根据权利要求4所述的销,还包括:
本体部;
止挡部,其在径向方向上大于所述本体部;及
凸缘部,其形成在所述本体部的一端。
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CN104162980A (zh) * | 2014-07-30 | 2014-11-26 | 格林精密部件(惠州)有限公司 | 一种压紧式自动热熔夹具 |
CN104733358A (zh) * | 2015-03-16 | 2015-06-24 | 鸿博股份有限公司 | 一种ic卡封装装置和方法 |
CN104977811A (zh) * | 2014-04-11 | 2015-10-14 | 优志旺电机株式会社 | 曝光装置及其固定方法 |
CN105280488A (zh) * | 2014-05-28 | 2016-01-27 | 株式会社迪思科 | 磨削装置以及矩形基板的磨削方法 |
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JP6366311B2 (ja) * | 2014-03-18 | 2018-08-01 | キヤノン株式会社 | 光走査装置 |
KR20150124201A (ko) * | 2014-04-28 | 2015-11-05 | 삼성전자주식회사 | 반도체 패키지의 진공 흡착 장치 및 방법 |
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JPH1086958A (ja) | 1996-09-12 | 1998-04-07 | Kokusai Electric Co Ltd | 蓋止め装置 |
JP3841576B2 (ja) | 1998-10-30 | 2006-11-01 | 富士通テン株式会社 | 基板固定装置及び基板の固定構造 |
JP2000150775A (ja) | 1998-11-13 | 2000-05-30 | Matsushita Electric Ind Co Ltd | 半導体素子実装治具および半導体素子実装方法 |
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JP4848869B2 (ja) * | 2006-07-13 | 2011-12-28 | セイコーエプソン株式会社 | 描画装置 |
JP4769697B2 (ja) | 2006-11-29 | 2011-09-07 | 富士通株式会社 | プリント基板の製造方法、プリント基板組立体の製造方法、及びプリント基板の反り矯正方法 |
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CN104977811A (zh) * | 2014-04-11 | 2015-10-14 | 优志旺电机株式会社 | 曝光装置及其固定方法 |
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CN105280488A (zh) * | 2014-05-28 | 2016-01-27 | 株式会社迪思科 | 磨削装置以及矩形基板的磨削方法 |
CN104162980A (zh) * | 2014-07-30 | 2014-11-26 | 格林精密部件(惠州)有限公司 | 一种压紧式自动热熔夹具 |
CN104733358A (zh) * | 2015-03-16 | 2015-06-24 | 鸿博股份有限公司 | 一种ic卡封装装置和方法 |
CN104733358B (zh) * | 2015-03-16 | 2017-11-28 | 鸿博股份有限公司 | 一种ic卡封装装置和方法 |
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US8147646B2 (en) | 2012-04-03 |
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