CN101540193B - 同步存储器与动态致能同步存储器中地址接收器的方法 - Google Patents

同步存储器与动态致能同步存储器中地址接收器的方法 Download PDF

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CN101540193B
CN101540193B CN2008101285205A CN200810128520A CN101540193B CN 101540193 B CN101540193 B CN 101540193B CN 2008101285205 A CN2008101285205 A CN 2008101285205A CN 200810128520 A CN200810128520 A CN 200810128520A CN 101540193 B CN101540193 B CN 101540193B
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张嘉仁
帕特特龙
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Nanya Technology Corp
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    • GPHYSICS
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    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

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Abstract

一种用来动态致能一同步存储器中地址接收器的方法,包含有:控制全部的地址接收器于一开始时处于一关闭状态;产生一命令讯号与一地址讯号;延迟该地址讯号以使该命令讯号与该地址讯号之间有一时间延迟;以及当该同步存储器接收到该命令讯号时,选择性地开启对应于该地址讯号的一地址接收器。

Description

同步存储器与动态致能同步存储器中地址接收器的方法
技术领域
本发明涉及一种同步存储器,特别是涉及一种可动态致能地址接收器的同步存储器。
背景技术
相较于异步(asynchronous)存储器,同步(synchronous)存储器具有较简单的时序(timing)需求,其中异步存储器必须每次于一写入操作发生时产生一脉冲讯号。同步存储器具有操作于时钟边缘的讯号,因此相较于异步存储器,可操作于较快的时钟之下。于具有一共享地址机制的多存储库存储器(multiple bank memory)中,输入一特定存储库的地址讯号可产生一瞬时(transient)电流给其它的存储库。传统方法因此利用译码逻辑电路来选择性地锁存或释放地址予一内部地址总线(address bus)。
请参阅图1,图1为已知同步存储器100的示意图。如图所示,同步存储器100具有一时钟接收器130、一命令接收器120以及一地址接收器110,其中时钟接收器130用来接收一时钟讯号,命令接收器120用来接收一命令讯号,以及地址接收器110用来接收一地址讯号。为了简明起见,图中仅显示出一组接收器。如图1所示的时序图,命令讯号CMD1、CMD2与地址讯号ADD1、ADD2于一相同时钟周期(clock cycle)中分别被命令接收器120与地址接收器110所接收,其中命令讯号被译码来产生一命令时钟CMD_CLK以锁存(latch)或释放(release)地址讯号给内部地址总线。
由于地址讯号与命令讯号是于相同的时钟周期中被接收,地址接收器需一直被开启,如此一来,便会消耗相当大的功率,因此亟需一种可于地址接收器有需要使用时才选择性地开启地址接收器的系统。
发明内容
本发明的目的之一在于提供一种依据所接收的命令来动态开启地址接收器的系统及其相关方法。
一种用来动态致能一同步存储器中地址接收器的方法,包含有:控制一地址接收器于一开始时处于一关闭状态;产生一命令讯号与一地址讯号;提供一系统时钟;依据该系统时钟来译码该命令讯号以选择性地产生一地址接收器致能讯号;以及依据该地址接收器致能讯号来开启该地址接收器;其中若该译码后的命令讯号指出该地址接收器必须被致能,则产生该地址接收器致能讯号,以及若该译码后的命令讯号指出该地址接收器不须被致能,则不会产生该地址接收器致能讯号。
本发明还提供一种同步存储器,其包含:一命令接收器,用来接收一命令讯号;一地址接收器,用来接收对应于该命令讯号的一地址讯号,其中该地址讯号相对于该命令讯号而被加以延迟,以及该地址接收器于一开始时处于一关闭状态;一系统时钟;以及一译码器,耦接至该命令接收器、该地址接收器与该系统时钟,用来译码该命令讯号以选择性地产生一地址接收器致能讯号来开启该地址接收器;其中若该译码后的命令讯号指出该地址接收器必须被致能,则该地址接收器致能讯号将会被产生,以及若该译码后的命令讯号指出该地址接收器不须被致能,则该地址接收器致能讯号将不会被产生。
附图说明
图1为已知同步存储器的操作的示意图。
图2为本发明同步存储器的一实施例的示意图。
图3为图2所示的同步存储器的操作的流程图。
附图符号说明
  100、200   同步存储器
  110   地址讯号
  120、220   命令接收器
  210   地址接收器
  230   时钟接收器
  240   译码器
  CMD_CLK   命令时钟
  rcv_enable   地址接收器致能讯号
具体实施方式
本发明提供一种用来于一同步存储器中动态致能地址接收器的方法。
请参阅图2,图2为本发明同步存储器200的一实施例的示意图。为了简明起见,图2仅显示单一组的接收器,同步存储器200包含:一地址接收器210,用来接收一地址讯号;一命令接收器220,用来接收一命令讯号;以及一时钟接收器230,用来接收一时钟讯号,其中该时钟讯号是由一系统时钟所产生。地址接收器210、命令接收器220与时钟接收器230耦接于一译码器(decoder)240,而译码器240与地址接收器210耦接至一内部地址总线,同步存储器200符合DDR4规格。
由图2所示的时序图可知,地址讯号ADD1、ADD2、ADD3较命令讯号CMD1、CMD2、CMD3晚一时钟周期才被接收,这是主要藉由依据系统时钟来延迟地址讯号所造成。请注意,此处仅延迟一时钟周期的地址讯号仅用以描述本发明的特征,并非作为本发明的一限制条件。地址讯号可藉由利用该系统时钟来锁存地址讯号、缓冲地址讯号或输入地址讯号至一延迟电路等方式而被加以延迟。所有可延迟地址讯号以使地址讯号与命令讯号之间产生时间延迟(latency)的方法皆落在本发明的范畴内。
首先,同步存储器200中全部的地址接收器初始被控制于一关闭状态,而命令讯号与地址讯号被产生以及地址讯号依据系统时钟来被延迟以于命令讯号与地址讯号之间产生一时间延迟。如同先前技术,命令讯号所具有的逻辑信息会经由译码以产生一命令时钟CMD_CLK,但于本发明中,命令讯号亦包含有关地址接收器210是否需要被致能的逻辑信息。命令讯号被输入至译码器240,而译码器240便产生命令时钟CMD_CLK与一地址接收器致能讯号rcv_enable。若译码后的命令讯号指出地址接收器210不需被致能,则没有地址接收器致能讯号rcv_enable会被产生。
理想上,地址讯号与命令讯号之间的时间延迟是依据译码器240产生地址接收器致能讯号rcv_enable以及开启地址接收器210所需的处理时间而定,如此一来,开启地址接收器所造成的效能冲击可被降低。
在地址讯号依据命令时钟CMD_CLK而释放予内部地址总线之后,若于一段间歇时间中没有接收到任何命令讯号,则地址接收器210可再被关闭,而接下来的命令讯号会被输入至译码器240来决定是否要再度开启地址接收器210。
一并参照图3,本发明方法将于后详细描述。图3是本发明方法的步骤的流程图。这些步骤如下所述:
步骤300:控制全部的地址接收器处于一关闭状态。
步骤302:是否有一命令讯号与一地址讯号产生?若是,则进入步骤304,否则回到步骤302;
步骤304:利用系统时钟来锁存地址讯号以使地址讯号被延迟至少一时钟周期于落于命令讯号之后。
步骤306:利用系统时钟与控制讯号的译码逻辑电路来产生一地址接收器致能讯号与一命令时钟。
步骤308:地址接收器致能讯号是否指出地址接收器需要被开启?若是,则进入步骤310,否则,进入步骤314。
步骤310:开启地址接收器。
步骤312:利用命令时钟来释放地址给内部地址总线,接着回到步骤300。
步骤314:控制地址接收器保持于一关闭状态,接着回到步骤302。
由于地址讯号被一相对应的命令讯号所延迟,因此地址接收器无需处于一永久开启状态,且可依据命令讯号所传递的逻辑信息来动态地开启,因此便可节省传统地址接收器的电流消耗。
以上所述仅为本发明的较佳实施例,凡依本发明的权利要求所做的均等变化与修饰,皆应属本发明的涵盖范围。

Claims (8)

1.一种用来动态致能一同步存储器中地址接收器的方法,其特征在于包含有:
控制一地址接收器于一开始时处于一关闭状态;
产生一命令讯号与一地址讯号;
延迟该地址讯号以使于该命令讯号与该地址讯号之间具有一时间延迟;
提供一系统时钟;
依据该系统时钟来译码该命令讯号以选择性地产生一地址接收器致能讯号;以及
依据该地址接收器致能讯号来开启该地址接收器;
其中若该译码后的命令讯号指出该地址接收器必须被致能,则产生该地址接收器致能讯号,以及若该译码后的命令讯号指出该地址接收器不须被致能,则不会产生该地址接收器致能讯号。
2.如权利要求1所述的方法,其特征在于其中该地址讯号与该命令讯号之间的该时间延迟是依据该命令讯号的一译码时间而定。
3.如权利要求1所述的方法,其特征在于其中延迟该地址讯号的步骤包含有:
锁存该地址讯号达到该系统时钟的至少一时钟周期。
4.如权利要求1所述的方法,其特征在于其中该同步存储器符合DDR4规格。
5.一种同步存储器,其特征在于包含有:
一命令接收器,用来接受一命令讯号;
一地址接收器,用来接收对应于该命令讯号的一地址讯号,其中该地址讯号相对于该命令讯号而被加以延迟,以及该地址接收器于一开始时处于一关闭状态;
一系统时钟;以及
一译码器,耦接于该命令接收器、该地址接收器与该系统时钟,用来依据该系统时钟译码该命令讯号来选择性地产生一地址接收器致能讯号来开启该地址接收器;
其中若该译码后的命令讯号指出该地址接收器必须被致能,则该地址接收器致能讯号将会被产生,以及若该译码后的命令讯号指出该地址接收器不须被致能,则该地址接收器致能讯号将不会被产生。
6.如权利要求5所述的同步存储器,其特征在于:
该系统时钟用来锁存该地址讯号达到该系统时钟的至少一时钟周期。
7.如权利要求6所述的同步存储器,其特征在于其中该地址讯号依据该命令讯号的一译码时间而被锁存。
8.如权利要求5所述的同步存储器,其符合DDR4规格。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103197753A (zh) * 2013-03-25 2013-07-10 西安华芯半导体有限公司 一种darm存储器省电方法
CN103150006A (zh) * 2013-03-25 2013-06-12 西安华芯半导体有限公司 Dram存储器的省电方法
US11132307B2 (en) 2018-05-25 2021-09-28 Rambus Inc. Low latency memory access
KR102591123B1 (ko) * 2018-07-16 2023-10-19 에스케이하이닉스 주식회사 반도체장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1627521A (zh) * 2003-12-08 2005-06-15 尔必达存储器株式会社 半导体集成电路器件

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829324A (en) * 1987-12-23 1989-05-09 Xerox Corporation Large array thermal ink jet printhead
US5043740A (en) * 1989-12-14 1991-08-27 Xerox Corporation Use of sequential firing to compensate for drop misplacement due to curved platen
US5160403A (en) * 1991-08-09 1992-11-03 Xerox Corporation Precision diced aligning surfaces for devices such as ink jet printheads
US5552813A (en) * 1992-03-11 1996-09-03 Rohm Co., Ltd. Ink jet head with nozzle arrangement to reduce viscous drag
US5600354A (en) * 1992-04-02 1997-02-04 Hewlett-Packard Company Wrap-around flex with address and data bus
SG75088A1 (en) * 1993-04-30 2000-09-19 Hewlett Packard Co Common ink-jet cartridge platform for different printheads
US5620614A (en) * 1995-01-03 1997-04-15 Xerox Corporation Printhead array and method of producing a printhead die assembly that minimizes end channel damage
US5745130A (en) * 1995-12-11 1998-04-28 Xerox Corporation System for sensing the temperature of a printhead in an ink jet printer
US5808635A (en) * 1996-05-06 1998-09-15 Xerox Corporation Multiple die assembly printbar with die spacing less than an active print length
US6652052B2 (en) * 1997-07-15 2003-11-25 Silverbrook Research Pty Ltd Processing of images for high volume pagewidth printing
JP3211739B2 (ja) * 1997-08-25 2001-09-25 日本電気株式会社 半導体記憶装置
AU3021799A (en) * 1998-04-01 1999-10-18 Mosaid Technologies Incorporated Semiconductor memory asynchronous pipeline
US6350004B1 (en) * 1998-07-29 2002-02-26 Lexmark International, Inc. Method and system for compensating for skew in an ink jet printer
US6324645B1 (en) * 1998-08-11 2001-11-27 Verisign, Inc. Risk management for public key management infrastructure using digital certificates
JP2000163965A (ja) * 1998-11-27 2000-06-16 Mitsubishi Electric Corp 同期型半導体記憶装置
JP2001054954A (ja) * 1999-06-07 2001-02-27 Canon Inc インクジェットプリント装置および該装置用インクジェットヘッドの吐出状態検出方法
JP3858527B2 (ja) * 1999-08-10 2006-12-13 富士ゼロックス株式会社 データ生成装置およびデータ検証装置ならびにその方法
JP4216415B2 (ja) * 1999-08-31 2009-01-28 株式会社ルネサステクノロジ 半導体装置
US6336701B1 (en) * 1999-12-22 2002-01-08 Hewlett-Packard Company Ink-jet print pass microstepping
JP4315552B2 (ja) * 1999-12-24 2009-08-19 株式会社ルネサステクノロジ 半導体集積回路装置
EP1267515A3 (en) * 2000-01-21 2004-04-07 Sony Computer Entertainment Inc. Method and apparatus for symmetric encryption/decryption of recorded data
US6272070B1 (en) * 2000-02-09 2001-08-07 Micron Technology, Inc. Method and apparatus for setting write latency
GB0003920D0 (en) * 2000-02-21 2000-04-05 Ncipher Corp Limited Computer system
AUPQ595900A0 (en) * 2000-03-02 2000-03-23 Silverbrook Research Pty Ltd Modular printhead
KR20020026075A (ko) * 2000-09-30 2002-04-06 윤종용 잉크젯 프린터의 어레이 헤드에 장착된 칩들간의 오정렬에의한 인쇄 오차 보정 방법
JP2002259605A (ja) * 2001-02-26 2002-09-13 Sony Corp 情報処理装置及び方法、並びに記憶媒体
US6788593B2 (en) * 2001-02-28 2004-09-07 Rambus, Inc. Asynchronous, high-bandwidth memory component using calibrated timing elements
US6650573B2 (en) * 2001-03-29 2003-11-18 International Business Machines Corporation Data input/output method
JP4113338B2 (ja) * 2001-04-10 2008-07-09 富士通株式会社 半導体集積回路
EP1406410A1 (en) * 2001-07-05 2004-04-07 Vladimir Vladimirovich Nasypny Method for an integrated protection system of data distributed processing in computer networks and system for carrying out said method
DE10208716B4 (de) * 2002-02-28 2009-03-19 Qimonda Ag Steuerschaltung für ein S-DRAM
DE10208715B4 (de) * 2002-02-28 2004-05-06 Infineon Technologies Ag Latenz-Zeitschalter für ein S-DRAM
JP3941104B2 (ja) * 2002-06-11 2007-07-04 ブラザー工業株式会社 インクジェット記録装置
JP4392681B2 (ja) * 2002-11-15 2010-01-06 エルピーダメモリ株式会社 半導体記憶装置
JP2004284253A (ja) * 2003-03-24 2004-10-14 Fuji Xerox Co Ltd インクジェット記録ヘッド及びインクジェット記録装置
US6826113B2 (en) * 2003-03-27 2004-11-30 International Business Machines Corporation Synchronous dynamic random access memory device having memory command cancel function
KR100516694B1 (ko) * 2003-04-02 2005-09-22 주식회사 하이닉스반도체 반도체 메모리 장치
SE0302304D0 (sv) * 2003-08-27 2003-08-27 Astrazeneca Ab Novel compounds
US7634623B2 (en) * 2003-08-29 2009-12-15 Micron Technology, Inc. Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same
KR100596427B1 (ko) * 2003-12-30 2006-07-07 주식회사 하이닉스반도체 동작시 전류소모를 줄일 수 있는 반도체 메모리 장치
JP4827399B2 (ja) * 2004-05-26 2011-11-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20060294312A1 (en) * 2004-05-27 2006-12-28 Silverbrook Research Pty Ltd Generation sequences
US7267417B2 (en) * 2004-05-27 2007-09-11 Silverbrook Research Pty Ltd Printer controller for supplying data to one or more printheads via serial links
US7631190B2 (en) * 2004-05-27 2009-12-08 Silverbrook Research Pty Ltd Use of variant and base keys with two entities
US7266661B2 (en) * 2004-05-27 2007-09-04 Silverbrook Research Pty Ltd Method of storing bit-pattern in plural devices
US7557941B2 (en) * 2004-05-27 2009-07-07 Silverbrook Research Pty Ltd Use of variant and base keys with three or more entities
US7281777B2 (en) * 2004-05-27 2007-10-16 Silverbrook Research Pty Ltd Printhead module having a communication input for data and control
US7243193B2 (en) * 2004-05-27 2007-07-10 Silverbrook Research Pty Ltd Storage of program code in arbitrary locations in memory
US20060004829A1 (en) * 2004-05-27 2006-01-05 Silverbrook Research Pty Ltd Rolling keys
US7607757B2 (en) * 2004-05-27 2009-10-27 Silverbrook Research Pty Ltd Printer controller for supplying dot data to at least one printhead module having faulty nozzle
US7314261B2 (en) * 2004-05-27 2008-01-01 Silverbrook Research Pty Ltd Printhead module for expelling ink from nozzles in groups, alternately, starting at outside nozzles of each group
US7290852B2 (en) * 2004-05-27 2007-11-06 Silverbrook Research Pty Ltd Printhead module having a dropped row
US20060143454A1 (en) * 2004-05-27 2006-06-29 Silverbrook Research Pty Ltd Storage of multiple keys in memory
US7252353B2 (en) * 2004-05-27 2007-08-07 Silverbrook Research Pty Ltd Printer controller for supplying data to a printhead module having one or more redundant nozzle rows
US7224595B2 (en) * 2004-07-30 2007-05-29 International Business Machines Corporation 276-Pin buffered memory module with enhanced fault tolerance
US7660187B2 (en) * 2004-08-04 2010-02-09 Micron Technology, Inc. Method and apparatus for initialization of read latency tracking circuit in high-speed DRAM
US7336558B2 (en) * 2004-11-02 2008-02-26 Samsung Electronics Co., Ltd. Semiconductor memory device with reduced number of pads
US7170813B2 (en) * 2004-12-16 2007-01-30 Infineon Technologies Ag Memory circuit receivers activated by enable circuit
JP4492532B2 (ja) * 2005-12-26 2010-06-30 株式会社デンソー 燃料噴射制御装置
KR100753421B1 (ko) * 2006-06-19 2007-08-31 주식회사 하이닉스반도체 반도체 메모리 장치의 어드레스 래치 회로
KR100746229B1 (ko) * 2006-07-07 2007-08-03 삼성전자주식회사 반도체 메모리 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1627521A (zh) * 2003-12-08 2005-06-15 尔必达存储器株式会社 半导体集成电路器件

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