CN101535526A - 用于使多孔金属层稳定和功能化的方法 - Google Patents
用于使多孔金属层稳定和功能化的方法 Download PDFInfo
- Publication number
- CN101535526A CN101535526A CNA2007800388689A CN200780038868A CN101535526A CN 101535526 A CN101535526 A CN 101535526A CN A2007800388689 A CNA2007800388689 A CN A2007800388689A CN 200780038868 A CN200780038868 A CN 200780038868A CN 101535526 A CN101535526 A CN 101535526A
- Authority
- CN
- China
- Prior art keywords
- carbide
- stupalith
- silicide
- oxide
- metallic matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000000087 stabilizing effect Effects 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000000725 suspension Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- -1 Scium trioxide Chemical compound 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000007306 functionalization reaction Methods 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- WEAMLHXSIBDPGN-UHFFFAOYSA-N (4-hydroxy-3-methylphenyl) thiocyanate Chemical compound CC1=CC(SC#N)=CC=C1O WEAMLHXSIBDPGN-UHFFFAOYSA-N 0.000 claims description 3
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 claims description 3
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 206010010144 Completed suicide Diseases 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910039444 MoC Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910026551 ZrC Inorganic materials 0.000 claims description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 3
- VKTGMGGBYBQLGR-UHFFFAOYSA-N [Si].[V].[V].[V] Chemical compound [Si].[V].[V].[V] VKTGMGGBYBQLGR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 3
- ZBZHVBPVQIHFJN-UHFFFAOYSA-N trimethylalumane Chemical compound C[Al](C)C.C[Al](C)C ZBZHVBPVQIHFJN-UHFFFAOYSA-N 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910021355 zirconium silicide Inorganic materials 0.000 claims description 3
- AQEFLFZSWDEAIP-UHFFFAOYSA-N di-tert-butyl ether Chemical compound CC(C)(C)OC(C)(C)C AQEFLFZSWDEAIP-UHFFFAOYSA-N 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract 4
- 239000002243 precursor Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000011796 hollow space material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000007669 thermal treatment Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013528 metallic particle Substances 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000007704 wet chemistry method Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical group Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000003245 working effect Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- MMCOUVMKNAHQOY-UHFFFAOYSA-N carbonoperoxoic acid Chemical compound OOC(O)=O MMCOUVMKNAHQOY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1241—Metallic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- General Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Molecular Biology (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Catalysts (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
本发明涉及一种用于使多孔金属层稳定和功能化的方法，其中多孔金属层(1)包括在其中含有微孔(5)的基体(3)。在第一步骤中将陶瓷材料(7)或陶瓷材料的前级加入到金属基体(3)的微孔(5)里面，在第二步骤中将陶瓷材料(7)前级转化成陶瓷材料(7)并接着必要时对多孔金属层进行热或化学的后处理。本发明还涉及多孔金属结构，尤其是用于半导体晶体管的栅极，它在金属基体(3)里面包括微孔(5)。在金属基体(3)的微孔(5)里面含有陶瓷材料。
Description
技术领域
本发明涉及一种用于使多孔金属层稳定和功能化的方法，其中多孔金属层包括在其中含有微孔的基体。
这种多孔金属层例如作为半导体晶体管的栅极使用。具有这种多孔的栅极的晶体管例如可以作为气体传感器使用。多孔金属栅极例如通过湿法化学沉积纳米材料制成。由纳米材料制成的栅极可以在稳定性、气体敏感性和响应时间方面与金属化相比显示出有利的特性，金属化在常见的半导体工艺中、例如通过蒸镀或溅射制成。但是尤其在高温下这种电极的结构也退化，由此对传感器的功能产生不利影响。电极的退化例如由于烧结工艺和结构放大引起。电极的电化学特性通过选择金属和界面材料、例如半导体零部件确定。
发明内容
按照本发明的用于使多孔金属层稳定和功能化的方法，其中多孔金属层包括带有在其中含有的微孔的基体，包括下列步骤：
a)将陶瓷材料或陶瓷材料的前级(Vorstufen)加入到金属基体的微孔里面，
b)必要时将陶瓷材料前级转化成陶瓷材料，
c)必要时对层进行热或化学的后处理
按照本发明制成的多孔金属层例如可以作为半导体晶体管的栅极使用，它们作为化学敏感的器件、例如气体传感器使用。用于金属层的材料最好从铂、钯、铱、镍、金、银、铑。铜、锇、铼和其合金中选择。尤其在使用多孔金属层用于化学敏感的器件时这种金属层的种类对于化学敏感的功能具有重要影响。通常金属层的高度多孔性有助于所致力的传感器功能、例如高灵敏度和快速响应时间。
通过将陶瓷材料或陶瓷材料前级加入到金属基体的微孔里面(至少部分地)封闭可能的金属烧结路径(Sinterwege)。由此限制金属烧结过程并使微孔层稳定。由此例如使具有按照本发明方法制成的栅极的气敏晶体管在其电化学特性方面稳定化。由此延长使用寿命。此外能够在不利的条件下、例如在高温或腐蚀性气体环境下使用。
此外通过选择加入到微孔里面的陶瓷材料可以调整传感器的电化学特性、即敏感度、选择性和工作范围。例如镁、铝、硅、铟、锌、锡、铁、钛、锆、钪、钇、镧、铈、硼、钨、钒、钽、铌、铪或钼的氧化物、碳化物或硅化物以及由这些化合物组成混合物适合于作为陶瓷材料。优选由氧化铝、氧化硅、氧化铟、氧化锡、氧化锌、氧化铁、氧化钛、氧化锆、氧化钪、氧化钇、氧化镧、氧化铈，氮化铝、氮化硅、氮化铟、氮化钛、氮化硼、硅化铝、硅化钨、硅化钒、硅化钽、硅化铌、硅化锆、硅化铪、硅化钼、硅化钛、碳化硅、碳化铝、碳化钨、碳化钒、碳化钽、碳化铌、碳化锆、碳化铪、碳化钼和碳化钛以及由这些化合物组成的混合物中选择陶瓷材料。
除了使多孔金属层的稳定以外例如也可以不同地限制不同种类的物质传送过程(Stofftransportprozesse)。在此存在这种可能性，判别寄生的反应路径，它们使由引起信号的种类的浓度减小化。此外使陶瓷材料也获得金属的吸附和催化特性。此外上述的陶瓷材料在许多情况下本身就具有吸附或催化特性，它们是可以利用的。
在优选的实施例中使陶瓷材料通过湿法化学工艺加入到基体的微孔里面。在此可以使陶瓷材料例如以纳米颗粒的形式呈现，它们弥散地存在于液体里面并且作为悬浮液涂覆到金属基体上。
在实施例中悬浮液中含有至少一种用于稳定化的添加剂。由此使纳米胶质在悬浮液中稳定。由此限制和防止胶质的沉淀或积聚。
例如水、酒精或其它极化有机溶剂和其混合物适合作为弥散有陶瓷纳米胶质的溶剂。
用于使悬浮液稳定的适合添加剂例如是酸、二甘醇单丁基醚或活性剂。适合的酸例如是盐酸、醋酸、硝酸、草酸和羟基碳酸。适合的活性剂例如是AOT(琥珀酸二(2乙基1己基)酯磺酸)、聚氧化乙烯-聚氧化丙烯-嵌段-共聚物和四烷基铵盐。
陶瓷纳米颗粒最好具有1至1000nm的平均直径。最好使平均直径为2至250nm。
如果将陶瓷材料的前级加入到金属基体的微孔里面，则使它们最好作为悬浮液或溶液加入。
作为悬浮液加入的陶瓷前级例如是波美石、羟基氧化铝ALO(OH)。波美石以酸悬浮液中的纳米颗粒的形式加入到金属基体的空心空间里面。紧接着的热处理在300至500℃范围中将ALO(OH)纳米颗粒转化成烧结的Al2O3。
在另一实施例中陶瓷材料的前级作为溶液加入到金属基体的微孔里面。陶瓷材料的适合的前级最好是溶解的金属盐，它们在步骤(b)中转化成其对应的金属氧化物。为此例如将镁、铝、硅、铟、锌、锡、铁、钛、锆、钪、钇、镧或铈的盐溶液加入到金属基体里面。盐例如可以是硝酸盐、含氧硝酸盐、卤化物、碳酸盐、乙酰丙酮盐、醋酸盐、碳酸衍生物、醇化物或有机金属复合物。它们例如溶解在水、酒精、极化有机溶剂或其混合物里面。在实现浸渍后将前级转化成真正的陶瓷。这一点例如通过在250至650℃范围中的煅烧或者通过化学或物理方式的其它方法实现，例如酸性或碱性处理、反应离子处理或低温处理、尤其是干燥。
例如通过浸入、离心涂镀、弥散(Dispensen)或通过厚层挤压膏体实现溶剂或悬浮液的涂覆。一般能够实现多次覆层。由此使陶瓷材料量与流体浓度无关地调整。此外能够产生不同陶瓷材料的层序。
也可以选择地使陶瓷材料或陶瓷材料前级例如通过溅射工艺或通过蒸镀工艺加入到金属基体的微孔里面。
附图说明
在附图中示出本发明的实施例并且在下面的描述中详细解释。附图中：
图1简示出金属基体，具有包含在其中的微孔，
图2示出金属基体，具有包含在其中的微孔，其中微孔以陶瓷材料填充，
图3简示出金属基体，具有包含在其中的微孔，它们以陶瓷材料填充，其中金属基体附加地以陶瓷材料覆盖。
在图1中示出金属基体，具有包含在其中的空心空间。
多孔结构1包括金属基体3，在其中构成微孔5。通过微孔5产生金属基体3的海绵式结构。由现有技术已知这种如图1所示的多孔结构。在一个实施例中能够使金属基体3除了所述至少一种金属外也含有至少一种陶瓷材料。如果金属基体3含有金属和陶瓷材料，但是需要使金属含量大到保证多孔结构1的导电性。当多孔结构1作为半导体晶体管的栅极使用时，尤其需要导电性。
作为金属基体3的材料优选使用元素周期表中的8至11族的金属。尤其优选铂、钯、铱、镍、金、银、铑、铜、锇、铼或其合金。
为了加工金属基体3例如将含有该金属材料的颗粒的悬浮液(Suspension)涂覆到载体上。此外在悬浮液中含有至少一种有机组分，它可以硬化成聚合物基体。通过必要时在悬浮液中含有的溶剂能够调节悬浮液的粘度。例如通过滴落或压印实现悬浮液的涂覆。同样可以实现各种其它的、专业人员公知的涂覆悬浮液的方式。在此根据涂覆形式调节悬浮液的粘度。
在涂覆悬浮液以后使悬浮液必要时为了去除溶剂被预干燥。此外至少一种有机组分硬化成聚合物基体。最好同样在温度提高时实现这一点。使金属材料的颗粒均匀地分布在聚合物基体里面。在下一步骤中去除聚合物基体。最好通过热解或高温分解实现这一点。通过在热解或高温分解时产生的温度使形成多孔的层的金属颗粒烧结到一起。同时产生多孔的层，具有在其中均匀分布的微孔。
但是除了上述方式以外也可以通过各种其它的专业人员公知的方式制造具有在其中构成的微孔的金属基体3。如果使这种多孔结构1用于半导体晶体管的栅极，可以使金属基体3的金属颗粒在氧化的表面上融合。在此氧化的表面一般是半导体晶体管的表面，在其上构成栅极。通过金属颗粒的融合降低半导体晶体管的使用寿命，晶体管例如可以作为气体传感器使用。
为了提高具有由多孔结构构成的栅极的使用寿命，需要使金属基体3稳定。按照本发明通过加入陶瓷材料到金属基体3的微孔5里面实现稳定化。这一点在图2中示出。
陶瓷材料7例如如上所述通过湿法化学工艺加入到微孔5里面。为此例如可以使陶瓷材料7分散在溶剂里面并且将悬浮液涂覆到多孔结构1上。在此悬浮液进入金属基体3的微孔5中。在涂覆含有陶瓷材料的悬浮液以后进行热处理，其中使陶瓷材料烧结在金属基体3上。由此使金属基体3并由此使多孔结构1稳定。通过使陶瓷材料7烧结在金属基体3的微孔5里面封闭金属基体3的烧结路径。由此防止或限制尤其在高温时观测的金属颗粒的融合。
也可以选择地使陶瓷材料7附加地以其前级的形式作为悬浮液或以溶液涂覆到金属基体3上。在此前级一方面例如以纳米颗粒呈现或者另一方面以对应的金属盐的形式溶解在溶剂里面。在涂覆陶瓷材料7的前级以后使它们转变成陶瓷材料7。这一点一般通过热处理实现。例如在250至650℃范围的温度下进行热处理。在此能够使热处理持续达多个小时。
除了将陶瓷材料7加入到金属基体3的空心空间5里面，还可以使含有陶瓷材料7的覆层9涂覆到金属基体3上。通过涂覆到金属基体3上的覆层9也使金属基体3并由此使多孔结构1稳定。覆层9的厚度一般在1至500nm的范围。
因为陶瓷材料7同样得到多孔结构，因此金属基体3也不会由于覆层9或以陶瓷材料7填充微孔5而相对于环境气体密封。因此还能够实现气体检测，如果多孔结构1作为半导体晶体管的栅极使用，它们作为气体传感器。
示例1
带具有约5至500nm范围的直径的空心空间5的200纳米厚的铂制多孔金属基体23，配有二氧化锆覆层。为此将四异丙基丙氧基锆的稀释酒精溶液加到多孔结构1上。接着进行干燥并且以500℃空气进行热处理。四异丙基丙氧基锆通过热处理转化成二氧化锆。金属基体3的空心空间以二氧化锆填充。附加地产生二氧化锆的在金属基体3上的覆层9。
示例2
为了得到氧化锆覆层也可以选择地，例如使用稀释的、酸性、含水酒精的硝酸锆溶液。在这种情况下也使硝酸锆通过热处理转化成氧化锆。
示例3
为了产生金属基体3的微孔5和覆层9使稀释的二氧化锆溶胶涂覆到铂的金属基体3上，其中二氧化锆颗粒的颗粒尺寸在2至50nm的范围，接着进行干燥并且在500℃空气中烧制。氧化锆烧结在金属基体3上并因此使金属基体3稳定。
示例4
为了使金属基体3的微孔5以二氧化硅填充并且产生二氧化硅覆层，首先将硅酸四乙酯溶解在乙醇里面。选择硅酸四乙酯的量，使得在溶液中产生百分之一重量百分比的SiO2。将这种溶液吸移到金属基体3上。接着使金属基体与在其上含有的溶液在空气现场加热到250℃。在此使硅酸四乙酯转化成氧化硅。
Claims (15)
1.一种用于使多孔金属层稳定和功能化的方法，其中多孔金属层(1)包括带有在其中包含的微孔(5)的基体(3)，包括下列步骤：
a)将陶瓷材料(7)或陶瓷材料的前级加入到金属基体(3)的微孔(5)里面，
b)必要时将陶瓷材料(7)前级转化成陶瓷材料，
c)必要时对金属层(1)进行热或化学的后处理。
2.如权利要求1所述的方法，其特征在于，所述陶瓷材料(7)以颗粒直径在1nm至1000nm范围中的陶瓷颗粒形式构成。
3.如权利要求1或2所述的方法，其特征在于，所述陶瓷材料作为含有弥散的陶瓷颗粒的悬浮液涂覆到金属基体上。
4.如权利要求3所述的方法，其特征在于，所述悬浮液离心喷镀或滴到金属基体上或者使金属基体浸入到悬浮液里面。
5.如权利要求4所述的方法，其特征在于，所述悬浮液作为溶剂含有水、至少一种有机溶剂或其混合物。
6.如权利要求4或5所述的方法，其特征在于，所述悬浮液含有至少一种用于稳定的添加剂，优选酸、活性剂或二甘醇单丁基醚。
7.如权利要求1至3中任一项所述的方法，其特征在于，所述陶瓷材料的前级以溶解的形式优选作为盐溶液存在。
8.如权利要求1所述的方法，其特征在于，所述陶瓷材料或陶瓷材料的前级通过溅射或蒸镀工艺涂覆到金属基体上。
9.如权利要求1至8中任一项所述的方法，其特征在于，所述陶瓷材料含有至少一种氧化物、至少一种氮化物、至少一种硅化物、至少一种碳化物或者其混合物。
10.如权利要求9所述的方法，其特征在于，所述氧化物是氧化铝、氧化硅、氧化铟、氧化锡、氧化锌、氧化铁、氧化钛、氧化锆、氧化钪、氧化钇、氧化镧或氧化铈，所述氮化物是氮化铝、氮化硅、氮化铟、氮化钛或氮化硼，所述硅化物是硅化铝、硅化钨、硅化钒、硅化钽、硅化铌、硅化锆、硅化铪、硅化钼或硅化钛，所述碳化物是碳化硅、碳化铝、碳化钨、碳化钒、碳化钽、碳化铌、碳化锆、碳化铪、碳化钼或碳化钛。
11.如权利要求1至10中任一项所述的方法，其特征在于，所述多孔金属层含有元素周期表8至11族的元素。
12.如权利要求11所述的方法，其特征在于，所述多孔金属层含有铂、钯、铱、镍、金、银、铑、铜、锇、铼或其合金。
13.一种尤其用于半导体晶体管的栅极的多孔金属层，包括在金属基体(3)里面的微孔(5)，其特征在于，在金属基体(3)的微孔(5)里面含有陶瓷材料(7)。
14.如权利要求13所述的结构，其特征在于，所述金属基体(3)由元素周期表中的8、9、10或11族的元素制成。
15.如权利要求13或14所述的结构，其特征在于，所述陶瓷材料由如下组中选择，该组由氧化铝、氧化硅、氧化铟、氧化锡、氧化锌、氧化铁、氧化钛、氧化锆、氧化钪、氧化钇、氧化镧、氧化铈、氮化铝、氮化硅、氮化铟、氮化钛、氮化硼，硅化铝、硅化钨、硅化钒、硅化钽、硅化铌、硅化锆、硅化铪、硅化钼、硅化钛，碳化硅、碳化铝、碳化钨、碳化钒、碳化钽、碳化铌、碳化锆、碳化铪、碳化钼和碳化钛以及由这些化合物的混合物组成。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006048906.3 | 2006-10-17 | ||
| DE200610048906 DE102006048906A1 (de) | 2006-10-17 | 2006-10-17 | Verfahren zur Stabilisierung und Funktionalisierung von porösen metallischen Schichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101535526A true CN101535526A (zh) | 2009-09-16 |
Family
ID=39183155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800388689A Pending CN101535526A (zh) | 2006-10-17 | 2007-10-12 | 用于使多孔金属层稳定和功能化的方法 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2104752A2 (zh) |
| JP (1) | JP2010507018A (zh) |
| CN (1) | CN101535526A (zh) |
| DE (1) | DE102006048906A1 (zh) |
| WO (1) | WO2008046785A2 (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103231185A (zh) * | 2013-04-03 | 2013-08-07 | 株洲宏大高分子材料有限公司 | 一种HFSi焊销及其制备方法 |
| CN104008968A (zh) * | 2013-02-22 | 2014-08-27 | 英飞凌科技股份有限公司 | 多孔金属涂敷 |
| CN106350058A (zh) * | 2016-08-22 | 2017-01-25 | 上海朗研光电科技有限公司 | 基于纳米多孔金的荧光增强基底的制备方法 |
| CN108700544A (zh) * | 2016-02-24 | 2018-10-23 | 田中贵金属工业株式会社 | 用于形成气体传感器电极的金属糊 |
| CN109790622A (zh) * | 2016-09-16 | 2019-05-21 | 德国艾托特克公司 | 在衬底表面上提供多层涂料的方法 |
| CN112028652A (zh) * | 2020-09-10 | 2020-12-04 | 刘树峰 | 一种超硅粉胶泥复合材料及其制备方法 |
| CN115772662A (zh) * | 2022-11-24 | 2023-03-10 | 西北有色金属研究院 | 一种多孔钯膜的制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010001624A1 (de) | 2010-02-05 | 2011-08-11 | Robert Bosch GmbH, 70469 | Verfahren zur Detektion von zwei oder mehr Gasspezies |
| DE102010038725A1 (de) | 2010-07-30 | 2012-02-02 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Gasdetektion |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE792075A (fr) | 1971-11-30 | 1973-05-29 | Union Carbide Corp | Elements metalliques poreux a revetement ceramique et leur procede de realisation |
| JPH0752736B2 (ja) * | 1985-10-02 | 1995-06-05 | 工業技術院長 | 化合物半導体装置の製造方法 |
| GB8606045D0 (en) * | 1986-03-12 | 1986-04-16 | Emi Plc Thorn | Gas sensitive device |
| JPS63128246A (ja) * | 1986-11-19 | 1988-05-31 | Seitai Kinou Riyou Kagakuhin Shinseizou Gijutsu Kenkyu Kumiai | 電界効果トランジスタ型酸素ガスセンサ |
| US5186833A (en) | 1991-10-10 | 1993-02-16 | Exxon Research And Engineering Company | Composite metal-ceramic membranes and their fabrication |
| GB9226916D0 (en) | 1992-12-24 | 1993-02-17 | Atomic Energy Authority Uk | Process for making ceramic membrane filters |
| JP3883646B2 (ja) * | 1997-02-14 | 2007-02-21 | 日本碍子株式会社 | 膜の形成方法と膜形成部品 |
| JP2005503982A (ja) * | 2001-08-30 | 2005-02-10 | アクティナ リミテッド | 薄膜多孔性セラミック−金属複合物を生成するためのプロセスおよびこのプロセスにより入手された複合物 |
| JP4429145B2 (ja) * | 2004-11-16 | 2010-03-10 | キヤノン株式会社 | 半導体素子の製造方法 |
| JP4555116B2 (ja) * | 2005-02-18 | 2010-09-29 | 大日本印刷株式会社 | 積層体 |
| DE102006000886B3 (de) | 2005-11-15 | 2007-05-31 | Atech Innovations Gmbh | Verfahren zur Herstellung eines keramikbeschichteten metallischen Trägersubstrates |
-
2006
- 2006-10-17 DE DE200610048906 patent/DE102006048906A1/de not_active Withdrawn
-
2007
- 2007-10-12 WO PCT/EP2007/060865 patent/WO2008046785A2/de active Application Filing
- 2007-10-12 JP JP2009532777A patent/JP2010507018A/ja active Pending
- 2007-10-12 EP EP07821232A patent/EP2104752A2/de not_active Withdrawn
- 2007-10-12 CN CNA2007800388689A patent/CN101535526A/zh active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104008968A (zh) * | 2013-02-22 | 2014-08-27 | 英飞凌科技股份有限公司 | 多孔金属涂敷 |
| CN103231185A (zh) * | 2013-04-03 | 2013-08-07 | 株洲宏大高分子材料有限公司 | 一种HFSi焊销及其制备方法 |
| CN108700544A (zh) * | 2016-02-24 | 2018-10-23 | 田中贵金属工业株式会社 | 用于形成气体传感器电极的金属糊 |
| CN106350058A (zh) * | 2016-08-22 | 2017-01-25 | 上海朗研光电科技有限公司 | 基于纳米多孔金的荧光增强基底的制备方法 |
| CN109790622A (zh) * | 2016-09-16 | 2019-05-21 | 德国艾托特克公司 | 在衬底表面上提供多层涂料的方法 |
| CN109790622B (zh) * | 2016-09-16 | 2021-01-05 | 德国艾托特克公司 | 在衬底表面上提供多层涂料的方法 |
| CN112028652A (zh) * | 2020-09-10 | 2020-12-04 | 刘树峰 | 一种超硅粉胶泥复合材料及其制备方法 |
| CN115772662A (zh) * | 2022-11-24 | 2023-03-10 | 西北有色金属研究院 | 一种多孔钯膜的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010507018A (ja) | 2010-03-04 |
| WO2008046785A2 (de) | 2008-04-24 |
| EP2104752A2 (de) | 2009-09-30 |
| WO2008046785A3 (de) | 2009-05-07 |
| DE102006048906A1 (de) | 2008-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101535526A (zh) | 用于使多孔金属层稳定和功能化的方法 | |
| Glynn et al. | Solution processable metal oxide thin film deposition and material growth for electronic and photonic devices | |
| Mathies et al. | Advances in inkjet‐printed metal halide perovskite photovoltaic and optoelectronic devices | |
| Hayakawa et al. | Gas sensing properties of platinum dispersed-TiO2 thin film derived from precursor | |
| US8501269B2 (en) | Sensitive materials for gas sensing and method of making same | |
| EP3257605B1 (en) | Silver powder, paste composition and method for producing silver powder | |
| Han et al. | Nanosensors for smart cities | |
| CN103003721B (zh) | 制备具有抗反射性能的涂层的方法 | |
| CN104849324A (zh) | 一种基于石墨烯/多壁碳纳米管/氧化锌复合材料的电阻型气体传感器及制作方法 | |
| Santhosam et al. | Effect of La incorporation on the NH 3 sensing behaviour of ZnO thin films prepared using low-cost nebulizer spray technique | |
| CN102933744B (zh) | 具有导电中间构造的涂层的低温制备方法 | |
| JP4807020B2 (ja) | 半導体微粒子分散用バインダー組成物の製造方法 | |
| Santhosam et al. | Donated free electrons induced enhancement in the NH3 sensing ability of ZnO thin films-Effect of terbium loading | |
| Leu et al. | Spin‐Coating‐Derived Gold‐Nanoparticle Memory | |
| CN103203469B (zh) | 一种Ag-Ag2O异质结构银材料的制备方法 | |
| JP7222647B2 (ja) | 圧電体膜形成用塗工液組成物、その製造方法、配向性圧電体膜、並びに、液体吐出ヘッド | |
| KR102426899B1 (ko) | 습식 공정을 이용한 고효율 태양열 흡수체 박막 및 그 제조방법 | |
| JPH10114521A (ja) | 超微粒貴金属分散酸化チタン薄膜およびその製法 | |
| ES2472368A1 (es) | Material compuesto que comprende una matriz porosa de carbón amorfo y nanopart�culas de bi obtenible mediante un procedimiento sol-gel, procedimiento de obtención y su uso | |
| Anbia et al. | Humidity Sensing Properties of the Sensor Based on V‐doped Nanoporous Ti0. 9Sn0. 1O2 Thin Film | |
| CN102627969B (zh) | 多壁碳纳米管/AgBiS2半导体纳米粒子杂化材料及其制备方法 | |
| JP2010506051A5 (ja) | 少なくとも１つの多孔質層の製造方法 | |
| Tan et al. | Rational design of ordered Bi/ZnO nanorod arrays: surface modification, optical energy band alteration and switchable wettability study | |
| EP3567131A1 (en) | Direct deposition of mesoporous metal oxide thin films for gas sensing | |
| WO2020130946A1 (en) | Transistor comprising a ceramic and an ionogel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090916 |