CN101529603A - 连接结构及其制造方法 - Google Patents
连接结构及其制造方法 Download PDFInfo
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- CN101529603A CN101529603A CNA2007800377699A CN200780037769A CN101529603A CN 101529603 A CN101529603 A CN 101529603A CN A2007800377699 A CNA2007800377699 A CN A2007800377699A CN 200780037769 A CN200780037769 A CN 200780037769A CN 101529603 A CN101529603 A CN 101529603A
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- surface electrode
- adhering film
- conductivity adhering
- distribution component
- film
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000002245 particle Substances 0.000 claims abstract description 71
- 238000009826 distribution Methods 0.000 claims description 67
- 239000007767 bonding agent Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 14
- 239000002313 adhesive film Substances 0.000 abstract 4
- 210000004027 cell Anatomy 0.000 description 52
- 239000000203 mixture Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 25
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 235000011837 pasties Nutrition 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000013007 heat curing Methods 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 6
- 239000012467 final product Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000013034 phenoxy resin Substances 0.000 description 5
- 229920006287 phenoxy resin Polymers 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 229920000426 Microplastic Polymers 0.000 description 4
- 238000002788 crimping Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 239000011133 lead Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical class [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 aluminic acid ester Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000001506 calcium phosphate Substances 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 235000011010 calcium phosphates Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明提供一种连接方法,其为通过导电性粘接薄膜电连接太阳能电池单元的表面电极和配线部件的方法,导电性粘接薄膜含有绝缘性粘接剂和导电性粒子,表面电极的与所述导电性粘接薄膜接触的面的十点平均粗糙度设定为Rz(μm)、最大高度设定为Ry(μm),导电性粒子的平均粒径r(μm)为十点平均粗糙度Rz以上,且导电性粘接薄膜的厚度t(μm)为最大高度Ry以上。
Description
技术领域
本发明涉及太阳能电池单元的表面电极与配线部件的连接方法、导电性粘接薄膜和太阳能电池组件。
背景技术
太阳能电池组件具有以下结构:多个太阳能电池单元通过被电连接于其表面电极的配线部件而被串联和/或并联连接。以往,制作该太阳能电池组件时,使用焊锡连接太阳能电池单元的表面电极和配线部件(例如,参照专利文献1和2)。焊锡的导通性、粘合强度等连接可靠性优异,廉价,具有通用性,因此被广泛使用。
另一方面,从环境保护的观点等考虑,提出了在太阳能电池中,不使用焊锡的配线的连接方法。例如,专利文献3~6中,公开了配线间通过导电性糊等导电性粘接剂连接的方法。
专利文献1:日本特开2004-204256号公报
专利文献2:日本特开2005-050780号公报
专利文献3:日本特开2000-286436号公报
专利文献4:日本特开2001-357897号公报
专利文献5:专利第3448924号公报
专利文献6:日本特开2005-101519号公报
发明内容
但是,专利文献1、2中记载的使用焊锡的连接方法中,太阳能电池的特性容易发生恶化。这是因为:将熔点为230~260℃左右的焊锡熔融时,太阳能电池中的半导体结构等部件被加热,和/或,焊锡的体积收缩带来的影响波及到半导体结构等。另外,利用焊锡进行配线连接时,难以控制电极和配线间的距离,因此难以充分获得封装时的尺寸精度。如果尺寸精度变低,则会导致封装引起的产品的合格率下降。
进而,根据本发明人等的研究,明确得知:如专利文献3~5的记载,使用导电性粘接剂进行太阳能电池单元的表面电极和配线部件的连接时,就配线间的连接来看,在高温高湿条件下,连接可靠性随着时间的经过而大幅降低。
另外,如专利文献6的记载,使用导电性薄膜进行太阳能电池单元的表面电极和配线部件的连接时,因为能够在低温下进行连接,所以可以抑制使用焊锡时产生的对太阳能电池单元的不良影响。但是,专利文献6记载的连接方法中,没有考虑到被粘着体的表面状态的影响,连接可靠性不一定充分。
因此,本发明是鉴于上述情况得到的,目的在于提供使用替代焊锡的连接部件并且具有充分优异的连接可靠性的太阳能电池单元的表面电极和配线部件的连接方法、导电性粘接薄膜和太阳能电池组件。
为了解决上述问题,本发明提供一种连接方法,其为将太阳能电池单元的表面电极和配线部件通过导电性粘接薄膜进行电连接的方法,导电性粘接薄膜含有绝缘性粘接剂和导电性粒子,表面电极的与导电性粘接薄膜接触的面的十点平均粗糙度设定为Rz(μm)、最大高度设定为Ry(μm),导电性粒子的平均粒径r(μm)为十点平均粗糙度Rz以上,且导电性粘接薄膜的厚度t(μm)为最大高度Ry以上。
另外,本发明还提供一种导电性粘接薄膜,其为用于将太阳能电池单元的表面电极和配线部件进行电连接的导电性粘接薄膜,含有绝缘性粘接剂和导电性粒子,表面电极的与导电性粘接薄膜接触的面的十点平均粗糙度设定为Rz(μm)、最大高度设定为Ry(μm),导电性粒子的平均粒径r(μm)为十点平均粗糙度Rz以上,且导电性粘接薄膜的厚度t(μm)为最大高度Ry以上。
上述本发明的连接方法的特征之一是,导电性粘接薄膜所含的导电性粒子的平均粒径r为太阳能电池单元表面电极的与导电性粘接薄膜接触的面的十点平均粗糙度Rz以上。因而,导电性粘接薄膜所含的导电性粒子可以充分确实地将太阳能电池单元的表面电极和配线部件进行电连接。
另外,本发明的连接方法的另一个特征是,导电性粘接薄膜的厚度t为太阳能电池单元表面电极的与导电性粘接薄膜接触的面的最大高度Ry以上。因而,导电性粘接薄膜可以充分牢固地粘接太阳能电池单元的表面电极和配线部件。
从而,这些电连接和粘接性的效果联合作用,本发明的连接方法能够充分提供其连接可靠性。
另外,本发明的连接方法不必使用焊锡连接太阳能电池的表面电极和配线部件,因此可以充分降低部件的加热和导电性粘接薄膜的体积收缩带来的影响。
这里,十点平均粗糙度Rz和最大高度Ry是根据JIS-B0604-1994导出的值,能够通过超深度性质测定显微镜观察和图像计测、解析软件计算来导出。另外,导电性粒子的平均粒径r为,用扫描电子显微镜(SEM)观察导电性粒子,随机抽出20个,测定这些粒子的粒径后,算出这些粒径的加和平均值,即为r。另外,导电性粘接薄膜的厚度t是用测微计测定的值。
另外,导电性粘接薄膜的弹性模量是如下所述测定的值。首先,在剥离性基材薄膜上涂布绝缘性粘接剂,形成其涂膜。接着,用烘箱将该涂膜在170℃加热20分钟。之后,剥离基材薄膜,得到由涂膜的加热生成物构成的薄膜。从该薄膜切出宽5mm、长35mm的短条,得到试验片。对于该试验片,使用动态粘弹性测定装置测定25℃时的储存弹性模量,将该值作为导电性粘接薄膜的弹性模量。
本发明中,太阳能电池单元的配线部件优选为薄膜状的导电部件。从而,容易控制连接时太阳能电池单元的表面电极和配线部件之间的距离,因此封装时的尺寸精度进一步提高。
本发明中,薄膜状的导电部件优选包含从Cu、Ag、Au、Fe、Ni、Pb、Zn、Co、Ti和Mg组成的组中选出的1种以上的金属作为主成分。通过包含这些金属,配线部件的导电性进一步提高,因此连接可靠性进一步提高。
本发明中,太阳能电池单元的表面电极可以是设置在从单晶硅晶片、多晶硅晶片、非晶硅晶片和化合物半导体晶片组成的组中选出的1种以上的晶片表面上的电极。通过使用这样的部件作为表面电极,本发明的上述作用效果可以进一步有效发挥。
另外,以往的太阳能电池单元的电极表面有比其他电子设备部件粗糙的倾向,因此,通过本发明,可以显著提高连接可靠性,结果,经历长时间也可以维持填充因子(Fill factor,以下记为“F.F.”)的高数值。
根据本发明,可以提供使用替代焊锡的连接部件且具有充分优异的连接可靠性的太阳能电池单元的表面电极和配线部件的连接方法。
附图说明
图1是表示实施方式的导电性粘接薄膜的一部分的模式截面图。
图2是表示实施方式的连接结构的一部分的模式截面图。
图3是表示实施方式的太阳能电池组件的主要部分的模式图。
符号说明
1...导电性粒子
2...粘接剂成分
3...表面电极
3a...总线电极(表面电极)
3b...总线电极(表面电极)
4...配线部件
6...半导体晶片
7...栅极
8...背面电极
10...导电性粘接薄膜
100...太阳能电池组件
200...连接结构
具体实施方式
以下,根据需要参照附图详细说明本发明的适宜的实施方式。附图中,相同要素使用相同符号,省略重复说明。另外,上下左右等位置关系,没有特别限定,基于附图所示的位置关系。进而,附图的尺寸比例不限于图示的比例。
图1是表示本发明的导电性粘接薄膜的一个实施方式的模式截面图。如图1所示,本实施方式的导电性粘接薄膜10至少含有导电性粒子1和粘接剂成分2而成。
另外,图2是通过使用本发明的导电性粘接薄膜来连接太阳能电池单元的表面电极和配线部件的连接方法得到的连接结构的一部分的模式截面图。该连接结构200是依次层叠太阳能电池单元的表面电极3、导电性粘接薄膜10和配线部件4而成。
本实施方式的导电性粘接薄膜10,用于连接太阳能电池单元的表面电极3和用于串联和/或并联连接太阳能电池单元的配线部件(配线电线)4。就太阳能电池单元来说,其表面和背面形成有用于取得电的电极(表面电极)。
这里,作为表面电极3,可以举出能够获得电导通的公知的材料。作为其具体例子,可以举出例如通常含有银的玻璃糊、粘接剂树脂中分散有各种导电性粒子的银糊、金糊、碳糊、镍糊、铝糊和通过烧成或蒸镀形成的ITO等。这些之中,从耐热性、导电性好稳定性优异以及低成本的观点考虑,适宜使用含有银的玻璃糊电极。
太阳能电池单元的情形中,主要是:在Si单晶、多晶和非晶中的至少一种以上形成的基板上,通过丝网印刷等涂布银糊和铝糊,根据需要将其干燥和烧成,从而各自设置Ag电极和Al电极作为表面电极3。
导电性粘接薄膜10至少具备粘接剂成分2和分散于其中的导电性粒子1。粘接剂成分2,只要是显示粘接性的物质就没有特别限定。但从进一步提高连接可靠性的观点考虑,优选粘接剂成分2含有热固化性树脂的组合物。
作为热固化性树脂,可以是公知的物质,可以举出例如环氧树脂、苯氧树脂、丙烯酸树脂、聚酰亚胺树脂、聚酰胺树脂、聚碳酸酯树脂。这些热固化性树脂可以单独使用1种,或者组合2种以上来使用。这些之中,从进一步提高连接可靠性的观点考虑,优选从环氧树脂、苯氧树脂和丙烯酸树脂组成的组中选出的1种以上的热固化性树脂。
本实施方式的粘接剂成分2,也可以是除热固化性树脂以外,还含有公知的固化剂和固化促进剂作为任意成分的组合物。另外,该粘接剂成分2,为了改善与表面电极3、配线部件4的粘接性和润湿性,也可以含有硅烷系偶联剂、钛酸酯系偶联剂、铝酸酯系偶联剂等改性材料,为了提高导电性粒子1的均匀分散性,也可以含有磷酸钙、碳酸钙的分散剂。进而,该粘接剂成分2,为了控制弹性模量、粘性,也可以含有丙烯酸橡胶、硅氧烷橡胶、聚氨酯等橡胶成分,为了控制表面电极3、配线部件4、导电性粒子1所含的银、铜的迁移性,也可以含有螯合材料等。
导电性粘接薄膜10的弹性模量,从缓和粘接后的表面电极3的翘曲、粘接时的压缩应力的观点考虑,优选为0.5GPa~4.0GPa,更优选为0.9GPa~3.5GPa。如果导电性粘接薄膜10的弹性模量为0.5GPa以上,则可以进一步防止其膜强度变差引起的粘接强度的降低,如果为4.0GPa以下,则应力缓和性优异,可以进一步抑制表面电极3的翘曲或破损的发生。
导电性粘接薄膜10的弹性模量如下进行测定。首先,在硅氧烷处理的聚对苯二甲酸乙二醇酯的表面上,用涂布器(YOSHIMISU公司制造)涂布作为导电性粘接薄膜10的前体的粘接剂成分,形成涂膜。接着,使用烘箱在170℃将涂膜干燥20分钟。之后,剥离聚对苯二甲酸乙二醇酯薄膜,得到膜厚25μm或35μm的导电性粘接薄膜10。从得到的导电性粘接薄膜10切出宽5mm、长35mm的短条状,用动态粘弹性测定装置(流变科仪公司(Rheometric Scientific)制造,商品名“SOLIDS ANALYZER”,夹具间距2cm),测定25℃的储存弹性模量,作为导电性粘接薄膜10的弹性模量。
导电性粒子1,只要是具有导电性、在连接结构200的制造环境和使用环境中是固体状的物质即可,其材料没有特别限定。作为导电性粒子1,可以举出例如金粒子、银粒子、铜粒子和镍粒子等金属粒子,或者镀金粒子、镀铜粒子和镀镍粒子等在导电性或绝缘性核粒子表面包覆有金属层等导电层而成的导电性粒子。
这些之中,从缓和连接时的导电性粒子的压缩应力、提高连接可靠性的观点考虑,优选核粒子表面包覆有导电层而成的粒子,更优选核粒子是塑料粒子、导电层是镀敷金属的物质。即,塑料粒子表面包覆有金属层而成的导电性粒子,由于粒子本身对连接后的振动、膨胀等变动的适应性高,因而优选。
分散于导电性粘接薄膜10中的导电性粒子1的配合量,从粘接剂成分2固化后的连接可靠性的观点考虑,相对于导电性粘接薄膜10的总体积,优选为0.5~20体积%,更优选为2.0~12体积%。如果导电性粒子1的配合量低于0.5体积%,则会有与表面电极3的物理性接点减少的倾向,并且,可靠性试验环境下(85℃85%RH)的连接结构200的连接电阻会有降低的倾向。另外,如果导电性粒子1的配合量超过20体积%,则由于粘接剂成分2的相对量减少,因而可靠性试验环境下(85℃85%RH)的连接结构200的粘接强度会有降低的倾向。
接着,对表面电极3和导电性粘接薄膜10的关系进行详细说明。导电性粒子1的平均粒径设定为r(μm),则其平均粒径r为表面电极3的表面Se的十点平均粗糙度Rz(μm)以上。另外,导电性粘接薄膜10的膜厚设定为t(μm,参照图1),则其膜厚t为表面电极3的表面Se的最大高度Ry(μm)以上。
表面电极3的表面Se,根据其用途,有时具有通常高低差3~30μm的凹凸。特别是设置于太阳能电池单元时的表面电极3,上述凹凸的高低差会有变粗达8~18μm的倾向。本发明人等潜心研究,结果发现,该凹凸引起以往的太阳能电池中连接可靠性不充分。
本发明人等进一步研究,结果发现,作为连接表面电极3和配线部件4的层,如果采用使导电性粒子1分散于粘接剂成分2中形成的导电性粘接薄膜10,则能够提高连接可靠性。从而查明,表面电极3的表面Se的表面粗糙度和导电性粒子1的平均粒径及导电性粘接薄膜10的膜厚的关系对连接可靠性有影响。具体来说,发现了:导电性粒子1的平均粒径r和表面电极3的表面Se的十点平均粗糙度Rz的相关性,以及导电性粘接薄膜10的膜厚t和表面电极3的表面Se的最大高度Ry的相关性,对连接可靠性有影响。认为:为了提高连接可靠性,表面电极3的表面Se的高低差大的部分的平均粗糙度成为决定导电性粒子1的平均粒径r的重要因素,表面电极3的薄膜Se的高低差的最大部分的粗糙度成为决定导电性粘接薄膜10的膜厚t的重要因素。
即,如果导电性粒子1的平均粒径r小于表面电极3的表面Se的十点平均粗糙度Rz,则导电性粒子1被埋在表面Se的凹部,对表面电极3和后面详述的配线部件4之间的电连接没有益处。结果,连接结构200的连接可靠性变得不充分。另外,如果导电性粘接薄膜10的膜厚t小于表面电极3的表面Se的最大高度Ry,则导电性粘接薄膜10难以无缝隙地填充在表面电极3和配线部件4之间,表面电极3和配线部件4之间的粘接性变得不充分。结果,连接结构200的连接可靠性变得不充分。
导电性粒子1的平均粒径r,优选大于表面电极3的表面Se的十点平均粗糙度Rz 1μm以上,更优选大于3μm以上,进一步优选大于5μm以上。从而,可以更充分地抑制表面电极3和配线部件4之间的连接不良。另外,上述平均粒径r和上述十点平均粗糙度Rz的差的上限,优选为Rz μm,更优选为2/3Rzμm。如果它们的差为Rzμm以下,特别是2/3Rzμm以下,则导电性粒子1物理性地稳定配置,因此可以获得使连接电阻降低的优点。
导电性粒子1的平均粒径r,从提高对粘接剂充分2的均匀分散性的观点考虑,优选为3~30μm,更优选为8~25μm。
导电性粘接薄膜10的膜厚t,优选大于表面电极3的表面Se的最大高度Ry1μm以上,更优选大于3μm以上,特别优选大于5μm以上。从而,导电性粘接薄膜10的填充变得更充分,可以更充分地抑制连接不良。另外,上述膜厚t和上述最大高度Ry的差的上限,优选为20μm,更优选为10μm。如果它们的差为20μm以下特别是10μm以下,则加热压接时的粘接剂成分2中的树脂的流动性和树脂的固化性进一步提高,可以获得连接强度增大的优点。
配线部件4优选为薄膜状,即,其截面优选为长方形。从而,由于能够容易地抑制与表面电极3的距离,所以封装时的尺寸精度提高。
配线部件4只要是包含金属作为主成分的物质即可,没有特别限定。作为配线部件4材料的金属,可以举出例如金、银、铜、铁、不锈钢、42合金和镀锡铜。从进一步提高导电性的观点考虑,配线部件4更优选包含从Cu、Ag、Au、Fe、Ni、Pb、Zn、Co、Ti和Mg组成的组中选出的1种以上的金属。另外,从进一步提高可挠性从而提高上述尺寸精度的观点考虑,配线部件4优选为设置于绝缘薄膜(无图示)表面上的镀金属层或金属电镀层。根据其用途,也可以是金属箔。
上述绝缘薄膜的材料,只要是显示绝缘性的物质即可,没有特别限定,但从提高可挠性从而提高上述尺寸精度的观点考虑,优选以树脂为主成分的物质。作为该树脂,可以举出例如聚酰亚胺树脂、玻璃环氧树脂、双马来酰亚胺三嗪树脂、聚酯树脂。
接着,对适宜的实施方式的连接方法即连接结构200的制造方法进行说明。该连接方法有以下的第1工序、第2工序、第3工序和第4工序。
第1工序中,准备在硅晶片等基材上形成表面电极3而成的第1层叠体。
第2工序中,在形成于绝缘薄膜上的配线部件4的表面上,形成导电性粘接薄膜10,得到第2层叠体。导电性粘接薄膜10,可以经过以下工序来获得:将分散导电性粒子1的糊状粘接剂成分(以下,导电性粒子和糊状的粘接剂成分的配合物也称为“糊状导电性粘接剂”)涂布在配线部件2的表面上,之后挥发溶剂等,形成薄膜状。或者,导电性粘接薄膜10,可以经过以下工序来获得:预先使溶剂等从糊状导电性粘接剂挥发,成型为薄膜状后,放置在配线部件4的表面上。
其中,从导电性粘接薄膜10的膜厚尺寸精度和/或后述的第4工序中压接导电性粘接薄膜10时的压力分配的观点考虑,优选后者。这时,优选将导电性粘接薄膜10放置在配线部件4的表面上后,将它们在层叠方向上加压,进行预压接。
糊状的粘接剂成分,是由包含上述热固化性树脂和其他任意成分的组合物得到的物质,常温(25℃)下为液态时,可以直接使用。上述组合物在室温下为固体时,除加热糊化之外,也可以使用溶剂糊化。作为可以使用的溶剂,只要是不与上述组合物反应且显示充分的溶解性的物质即可,没有特别限定。
另外,预先将糊状导电性粘接剂成型为薄膜状的情形中,可以通过以下操作来获得:将该糊状导电性粘接剂涂布在氟树脂薄膜、聚对苯二甲酸乙二醇酯薄膜、脱模纸等剥离性基材上,或使无纺布等基材浸渍上述粘接剂,放置在剥离性基材上,除去溶剂等。这样将糊状导电性粘接剂预先成型为薄膜状的话,则操作性优异,更加便利。另外,这种情况下,即将把导电性粘接薄膜10放置在配线部件4的表面上之前或者放置之后,剥离除去剥离基材。
糊状导电性粘接剂,可以使用敷贴器、辊涂机、逗点涂布机(コンマコ一タ)、刮刀涂布机、刮板涂布机、密闭涂布机、模头涂布机、浸渍涂布机等来涂布。此时,导电性粘接薄膜10的膜厚t,可以通过调整敷贴器或浸渍涂布机的间距来控制。另外,导电性粘接薄膜10的膜厚t,也可以通过调整糊状导电性粘接剂所含的热固化性树脂等不挥发成分的量来控制。
第3工序中,使第1层叠体的表面电极3的表面Se与第2层叠体的导电性粘接薄膜10的表面接触,进而将第1层叠体和第2层叠体层叠,得到第3层叠体。此时,将第1层叠体和第2层叠体位置对齐,进行层叠后,为了固定其位置,还可以在层叠方向上加压,进行预压接。
第4工序中,在层叠方向上对第3层叠体进行加热和加压,得到至少由表面电极3、导电性粘接薄膜10和配线部件4顺次层叠而成的连接结构200。通过该第4工序,不仅表面电极3和配线部件4通过导电性粘接薄膜10被粘接,而且能够确保它们之间通过导电性粘接薄膜10而电连接。
加热温度和加压压力的条件,只要在可以确保上述电连接、表面电极3和配线部件4通过导电性粘接薄膜10被粘接的范围内即可,没有特别限制。该加压和加热的各条件可以根据使用的用途、粘接剂成分中的各成分、连接结构200的材料来适当选择。例如,加热温度只要是热固化性树脂固化的温度即可。另外,加压压力,只要在表面电极3和导电性粘接薄膜10之间充分密合且表面电极3和配线部件4等无损伤的范围内即可。进而,加热加压时间,只要是热量不过渡传导到表面电极3、配线部件4等,这些材料不损伤或变质的时间即可。具体来说,从电连接和粘接力提高的观点考虑,优选的条件为,在1MPa~3MPa的加压条件下,导电性粘接薄膜10的到达温度能够在15秒~20秒内到达150℃~180℃。
就这样得到的连接结构200来说,分散于导电性粘接薄膜10中的导电性粒子1使得表面电极3和配线部件4之间的电连接很充分。进而,导电性粘接薄膜10以充分的粘接强度粘接表面电极3和配线部件4。结果,连接结构200连接可靠性变得非常优异。另外,为了确保电连接,也可以不适用焊锡,因此连接结构200的特性恶化可以得到充分抑制,还可以防止封装引起的产品合格率降低。
本实施方式的导电性粘接薄膜10,如上所述特别适用于太阳能电池单元。太阳能电池,是将多个太阳能电池单元串联和/或并联连接,为了提高耐环境性而夹入强化玻璃等中,具备由透明性的树脂填补间隙的外部端子,从而作为太阳能电池组件来使用。本实施方式的导电性粘接薄膜10,适用于连接配线部件和太阳能电池单元的表面电极的用途,所述配线部件用于将多个太阳能电池单元串联和/或并联连接。
本实施方式的太阳能电池组件具有以下结构:如上所述具有表面电极的多个太阳能电池单元通过电连接于表面电极的配线部件而被连接,表面电极和配线部件通过本实施方式的导电性粘接薄膜而被连接。
这里,图3是表示本实施方式的太阳能电池组件的主要部分的模式图,表示多个太阳能电池单元相互被配线连接的结构的概略。图3(a)表示太阳能电池组件的表面侧,图3(b)表示背面侧,图3(c)表示侧面侧。
如图3(a)~(c)所示,太阳能电池组件100为,在半导体晶片6的表面侧形成有栅极7和总线电极(表面电极)3a、在背面侧形成有背面电极8和总线电极(表面电极)3b的多个太阳能电池单元通过配线部件4相互连接。配线部件4,通过本发明的导电性粘接薄膜10,其一端与作为表面电极的总线电极3a连接,另一端与作为表面电极的总线电极3b连接。
具有所述结构的太阳能电池组件100,由于表面电极和配线部件通过上述本实施方式的导电性粘接薄膜连接,因此没有对太阳能电池单元的不良影响且可以获得充分的连接可靠性。因而,太阳能电池组件100,由于其优异的连接可靠性,可以长时间确保高F.F.。
以上,对于本发明的适宜实施方式进行了说明,但本发明不限于上述实施方式。本发明,在不脱离其宗旨的范围内可以进行各种变形。
本发明的连接方法,不仅适用于上述制作太阳能电池,而且也可以适用于制作例如钽电容、氧化铝电解电容、陶瓷电容、大功率晶体管、各种传感器、MEMS相关材料、显示器材料的引出配线部件等。
实施例
以下,通过实施例对本发明进行更详细的说明,但本发明不限于这些实施例。
实施例1
首先,准备在多品性硅晶片表面上设置有由银玻璃糊形成的表面电极(宽2mm×长15cm,Rz:10μm,Ry:14μm)而成的太阳能电池单元(MOTECH公司制造,商品名“125方形单元多晶MOT T1”,厚度:250μm×宽12.5cm×长12.5cm)。
接着,准备共聚丙烯酸丁酯40质量份、丙烯酸乙酯30质量份、丙烯腈30质量份和甲基丙烯酸缩水甘油酯3质量份而成的丙烯酸树脂(日立化成工业公司制造,商品名“KS8200H”,分子量:85万)。
将苯氧树脂(联合碳化物公司(Union Carbide)制造,商品名“PKHC”,重均分子量:45000)50g和上述丙烯酸橡胶125g溶解在醋酸乙酯400g中,得到固体成分30质量%的溶液。接着,将含有微囊型潜伏性固化剂的液状环氧树脂(旭化成化学公司制造,商品名“诺巴克(ノバキユア)HX-3941HP”,环氧当量:185g/eq)325g添加到上述溶液中,进而搅拌溶液,得到糊状的粘接剂成分。
接着,对于上述粘接剂成分,添加平均粒径12μm的作为导电性粒子的镍粒子(表观密度:3.36g/cm3),使其分散。这样,得到对于粘接剂成分和导电性粒子的合计体积配合5体积%的导电性粒子的糊状导电性粘接剂。导电性粒子的平均粒径是经过用扫描电子显微镜(SEM,日立制作所,商品名“S-510”)的观察,通过上述方法导出的。另外,导电性粒子的配合量由粒子体积和导电性粒子的表观密度算出,所述粒子体积是把导电性粒子的形状看做平均粒径为直径的球状而算出的。
使用辊涂机(TESTER产业公司制造,商品名“PI-1210”)将上述糊状导电性粘接剂涂布到作为配线部件的宽20cm×长30cm×厚175μm的电解铜箔的光泽面上,得到涂膜。调整辊涂机的间距,使溶剂等从涂膜挥发后的厚度即导电性粘接薄膜的厚度为25μm。该调整如下进行:事先改变间距,制作除去溶剂等后的膜厚不同的3种薄膜,导出间距与膜厚的关系式,基于该关系式进行调整。
接着,将涂膜放在加热板上,通过70℃加热3分钟,使溶剂等挥发。之后,通过切条机(东洋刀具公司制造,商品名“高精度ギヤングユニツト”)剪裁成2mm宽,分散导电性粒子,得到在电解铜箔的光泽面上设置有厚25μm的导电性粘接薄膜的层叠体。将该层叠体剪裁成20cm长,形成宽2mm×长20cm的矩形。
接着,使与导电性粘接薄膜的电解铜箔测相反侧的表面和上述太阳能电池单元的表面电极的表面相接,将它们层叠,得到层叠体。接着,使用压接工具(日化设备工程公司制造,商品名“AC-S300”),在加热温度170℃、加压压力2MPa、加热加压时间20秒的条件下,在层叠方向上对该层叠体进行加热和加压。这样,得到由电解铜箔得到的配线部件通过导电性粘接薄膜与太阳能电池单元的表面电极连接的连接结构。
实施例2
使用在绝缘薄膜即树脂薄膜的主面上实施镀铜的镀铜薄膜(镀铜厚度:40μm)代替电解铜箔,除此以外,进行与实施例1相同的操作,得到连接结构。
实施例3
使用使用塑料粒子表面用金镀层包覆而成的镀金塑料粒子(平均粒径:20μm,金镀层厚度:平均表观密度:2.8g/cm3)代替镍粒子,使用具有Rz:15μm、Ry:14μm的表面粗糙度的设置有由银玻璃糊形成的表面电极而成的太阳能电池单元(MOTECH公司制造,商品名“125方形单元多晶MOT T1”,厚度:250μm×宽12.5cm×长12.5cm)代替具有Rz:10μm、Ry:14μm的表面粗糙度的设置有由银玻璃糊形成的表面电极而成的太阳能电池单元,除此以外,进行与实施例1相同的操作,得到连接结构。
比较例1
首先,准备与实施例1相同的太阳能电池。接着,准备镀锡铜线(宽2mm×厚250μm),焊锡连接上述太阳能电池单元的电极和镀锡铜线。
比较例2、3
除了如表4记载那样改变导电性粒子的平均粒径以外,进行与实施例1相同的操作,得到连接结构。
比较例4
除了如表6记载那样改变导电性粘接薄膜的厚度以外,进行与实施例1相同的操作,得到连接结构。
以上,各实施例和比较例的粘接剂成分的各物质的配合如表1、2所示,导电性粒子和配线部件的种类如表3、4所示,表面电极的表面粗糙度和导电性粘接薄膜的种类如表5、6所示。其中,对于导电性粘接薄膜的厚度、表面电极的薄膜粗糙度,如下进行测定。另外,导电性粘接薄膜的弹性模量(储存弹性模量)如上所述进行测定。
导电性粘接薄膜的厚度测定
对于导电性粘接薄膜的厚度,通过测微计(Mitutoyo Corp.公司制造,商品名“ID-C112C”)测定。
表面电极的表面粗糙度测定
对于表面电极的十点平均粗糙度Rz和最大高度Ry,按照JIS-B0604-1994导出。电极表面,通过超深度形状测定显微镜(KEYENCE公司制造,商品名“VK-8510”)进行观察,通过图像计测解析软件(KEYENCE公司制造,商品名“VK-H1A7”导出Rz和Ry)。
表1
苯氧树脂(g) | 丙烯酸橡胶(g) | 醋酸乙酯(g) | 环氧树脂(g) | |
实施例1 | 50 | 125 | 400 | 325 |
实施例2 | 50 | 125 | 400 | 325 |
实施例3 | 50 | 125 | 400 | 325 |
表2
苯氧树脂(g) | 丙烯酸橡胶(g) | 醋酸乙酯(g) | 环氧树脂(g) | |
比较例1 | -- | -- | -- | -- |
比较例2 | 50 | 125 | 400 | 325 |
比较例3 | 50 | 125 | 400 | 325 |
比较例4 | 50 | 125 | 400 | 325 |
表3
表4
表5
表6
各特性的评价
针对上述实施例1~3和比较例1~4的连接结构,如下测定剥离强度、晶片(基材)的翘曲、F.F.(1000h)/F.F.(0h)、太阳能电池单元的成品率。结果如表7、8所示。
剥离强度的测定
将得到的连接结构的接头电极(电解铜箔或镀铜薄膜)的端部弯曲成垂直,固定于剥离强度测定装置(ORIENTEC公司制造,商品名“STA-1150”)的夹具。之后,以拉伸速度2cm/秒向上拉接头电极,测定剥离强度。其中,表中所谓“晶片破裂”的意思是,由于剥离强度高,完全剥离阳极之前,晶片破裂,无法测定剥离强度。
晶片翘曲的测定
将得到的连接结构放在平滑面上,晶片朝下,将矩形晶片的一端(一边)固定在平滑面上。由于晶片的与电极侧相反侧的面成为凸状,因此将矩形晶片的一端固定在平滑面上时,则与其相对的一端成为浮起的状态。用焦点深度计测定该浮起的一端到平滑面的5点的距离,算出加和平均值。导出上述加和平均值相对于晶片的一边长的比例(%),作为翘曲量。这里,测定界限的下限值为0.3%,因此小于该值的情况记为“<0.3”。
F.F.(1000h)/F.F.(0h)的测定
使用太阳模拟器(wacom电创社制造,商品名“WXS-155S-10”,AM:1.5G)测定得到的连接结构的IV曲线。另外,将连接结构在85℃、85%RH的高温高湿环境下静置1000小时后,同样地测定IV曲线。由各IV曲线导出F.F,用高温高湿环境下静置后的F.F除以高温高湿条件下静置前的F.F.,得到F.F.(1000h)/F.F.(0h),以其作为评价指标。通常,F.F.(1000h)/F.F.(0h)的值为0.95以下,则判断为连接可靠性低。
太阳能电池单元成品率的测定
首先,制作10个连接结构。观察各连接结构的状态,10个之中,除观察到破裂或剥离的连接结构之外的个数作为成品率(%),进行评价。
表7
剥离强度(MPa) | 晶片翘曲(%) | ΔF.F.(1000h)/ΔF.F.(0h) | 单元成品率 | |
实施例1 | 晶片破裂 | <0.3 | 0.957 | 100 |
实施例2 | 晶片破裂 | <0.3 | 0.957 | 100 |
实施例3 | 晶片破裂 | <0.3 | 0.957 | 100 |
表8
剥离强度(MPa) | 晶片翘曲(%) | ΔF.F.(1000h)/ΔF.F.(0h) | 单元成品率 | |
比较例1 | 晶片破裂 | 3.0 | 0.957 | 60 |
比较例2 | 晶片破裂 | <0.3 | 0.642 | 100 |
比较例3 | 晶片破裂 | <0.3 | 0.885 | 100 |
比较例4 | 200 | <0.3 | 0.642 | 20 |
工业上的应用性
根据本发明,可以提供使用连接部剂替代焊锡、并且具有非常优异的连接可靠性的太阳能电池单元的表面电极和配线部件的连接方法。
Claims (9)
1.一种连接方法,其为将太阳能电池单元的表面电极和配线部件通过导电性粘接薄膜进行电连接的方法,
所述导电性粘接薄膜含有绝缘性粘接剂和导电性粒子,
所述表面电极的与所述导电性粘接薄膜接触的面的十点平均粗糙度设定为Rz(μm)、最大高度设定为Ry(μm),
所述导电性粒子的平均粒径r(μm)为所述十点平均粗糙度Rz以上,且所述导电性粘接薄膜的厚度t(μm)为所述最大高度Ry以上。
2.根据权利要求1所述的连接方法,其中,所述配线部件为薄膜状的导电部件。
3.根据权利要求1或2所述的连接方法,其中,所述配线部件包含从Cu、Ag、Au、Fe、Ni、Pb、Zn、Co、Ti和Mg组成的组中选出的1种以上的金属作为主成分。
4.根据权利要求1~3的任一项所述的连接方法,其中,所述表面电极是设置在从单晶硅晶片、多晶硅晶片、非晶硅晶片和化合物半导体晶片组成的组中选出的1种以上的晶片的表面上的电极。
5.一种导电性粘接薄膜,其为用于将太阳能电池单元的表面电极和配线部件进行电连接的导电性粘接薄膜,
含有绝缘性粘接剂和导电性粒子,
所述表面电极的与所述导电性粘接薄膜接触的面的十点平均粗糙度设定为Rz(μm)、最大高度设定为Ry(μm),
所述导电性粒子的平均粒径r(μm)为所述十点平均粗糙度Rz以上,且所述导电性粘接薄膜的厚度t(μm)为所述最大高度Ry以上。
6.根据权利要求5所述的导电性粘接薄膜,其中,所述配线部件为薄膜状的导电部件。
7.根据权利要求5或6所述的导电性粘接薄膜,其中,所述配线部件包含从Cu、Ag、Au、Fe、Ni、Pb、Zn、Co、Ti和Mg组成的组中选出的1种以上的金属作为主成分。
8.根据权利要求5~7的任一项所述的导电性粘接薄膜,其中,所述表面电极是设置在从单晶硅晶片、多晶硅晶片、非晶硅晶片和化合物半导体晶片组成的组中选出的1种以上的晶片的表面上的电极。
9.一种太阳能电池组件,具有以下结构:具有表面电极的多个太阳能电池单元通过电连接于所述表面电极的配线部件而被连接,
所述表面电极和所述配线部件通过权利要求5~8的任一项所述的导电性粘接薄膜而被连接。
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Also Published As
Publication number | Publication date |
---|---|
US9123835B2 (en) | 2015-09-01 |
CA2666404A1 (en) | 2008-04-17 |
KR101081163B1 (ko) | 2011-11-07 |
CN101997059A (zh) | 2011-03-30 |
CN101529603B (zh) | 2010-12-29 |
WO2008044357A1 (fr) | 2008-04-17 |
KR20090073218A (ko) | 2009-07-02 |
CN101997059B (zh) | 2012-09-26 |
EP2086023A4 (en) | 2012-05-09 |
US20100147355A1 (en) | 2010-06-17 |
US20160035925A1 (en) | 2016-02-04 |
EP2086023A1 (en) | 2009-08-05 |
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