CN101510536B - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法 Download PDF

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CN101510536B
CN101510536B CN200810186572.8A CN200810186572A CN101510536B CN 101510536 B CN101510536 B CN 101510536B CN 200810186572 A CN200810186572 A CN 200810186572A CN 101510536 B CN101510536 B CN 101510536B
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pattern
dielectric film
semiconductor substrate
semiconductor device
film
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CN101510536A (zh
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小出优树
南正隆
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NEC Electronics Corp
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Renesas Electronics Corp
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CN200810186572.8A 2008-02-14 2008-12-25 半导体装置及半导体装置的制造方法 Active CN101510536B (zh)

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JP2008-033012 2008-02-14
JP2008033012A JP5007250B2 (ja) 2008-02-14 2008-02-14 半導体装置の製造方法
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JP6872991B2 (ja) * 2017-06-29 2021-05-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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