CN101495487A - 取代的苯并二噻吩和苯并二硒吩 - Google Patents

取代的苯并二噻吩和苯并二硒吩 Download PDF

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Publication number
CN101495487A
CN101495487A CNA2007800283507A CN200780028350A CN101495487A CN 101495487 A CN101495487 A CN 101495487A CN A2007800283507 A CNA2007800283507 A CN A2007800283507A CN 200780028350 A CN200780028350 A CN 200780028350A CN 101495487 A CN101495487 A CN 101495487A
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M·希尼
W·张
S·蒂尔尼
I·麦卡洛克
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Merck Patent GmbH
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Merck Patent GmbH
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    • C09K19/34Non-steroidal liquid crystal compounds containing at least one heterocyclic ring
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    • C07ORGANIC CHEMISTRY
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    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
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    • C07D517/02Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains two hetero rings
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    • C07F7/0803Compounds with Si-C or Si-Si linkages
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    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
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    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
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    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
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  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyethers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Thin Film Transistor (AREA)
CNA2007800283507A 2006-07-26 2007-06-29 取代的苯并二噻吩和苯并二硒吩 Pending CN101495487A (zh)

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EP06015563 2006-07-26
EP06015563.7 2006-07-26

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US (1) US20090314997A1 (enExample)
EP (1) EP2044082A1 (enExample)
JP (2) JP2010502570A (enExample)
KR (1) KR20090033909A (enExample)
CN (1) CN101495487A (enExample)
TW (1) TWI482776B (enExample)
WO (1) WO2008011957A1 (enExample)

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CN102762545A (zh) * 2010-02-15 2012-10-31 默克专利股份有限公司 半导体聚合物
CN102827354A (zh) * 2011-06-13 2012-12-19 中国科学院化学研究所 基于侧链为三烷基硅乙炔的二噻吩并苯共聚物及其制备方法和应用
CN103664994A (zh) * 2012-08-31 2014-03-26 昆山维信诺显示技术有限公司 苯并二噻吩类衍生物有机电致发光材料及其应用
CN103833974A (zh) * 2012-11-27 2014-06-04 海洋王照明科技股份有限公司 一种含并二硒吩-噻咯并二(苯并噻二唑)共聚物及其制备和应用
CN106866700A (zh) * 2017-04-21 2017-06-20 黄河科技学院 2,6二溴苯并[1,2‑b:4,5‑b]二噻酚‑4,8‑二酮的高效合成方法
CN107698742A (zh) * 2017-06-14 2018-02-16 中南大学 苯并二噻吩二酮基共轭微孔聚合物制备及其光催化应用
CN108026447A (zh) * 2015-09-23 2018-05-11 默克专利股份有限公司 控制经聚合物稳定的液晶显示器中预倾角的方法
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Cited By (14)

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Publication number Priority date Publication date Assignee Title
US9365585B2 (en) 2010-02-15 2016-06-14 Merck Patent Gmbh Semiconducting polymers
CN102762545A (zh) * 2010-02-15 2012-10-31 默克专利股份有限公司 半导体聚合物
CN102762545B (zh) * 2010-02-15 2016-01-20 默克专利股份有限公司 半导体聚合物
US10155774B2 (en) 2010-02-15 2018-12-18 Merck Patent Gesellschaft Mit Beschrankter Haftung Semiconducting polymers
CN102827354A (zh) * 2011-06-13 2012-12-19 中国科学院化学研究所 基于侧链为三烷基硅乙炔的二噻吩并苯共聚物及其制备方法和应用
CN103664994A (zh) * 2012-08-31 2014-03-26 昆山维信诺显示技术有限公司 苯并二噻吩类衍生物有机电致发光材料及其应用
CN103833974A (zh) * 2012-11-27 2014-06-04 海洋王照明科技股份有限公司 一种含并二硒吩-噻咯并二(苯并噻二唑)共聚物及其制备和应用
CN103833974B (zh) * 2012-11-27 2016-01-27 海洋王照明科技股份有限公司 一种含并二硒吩-噻咯并二(苯并噻二唑)共聚物及其制备和应用
CN108026447A (zh) * 2015-09-23 2018-05-11 默克专利股份有限公司 控制经聚合物稳定的液晶显示器中预倾角的方法
CN108026447B (zh) * 2015-09-23 2021-12-17 默克专利股份有限公司 控制经聚合物稳定的液晶显示器中预倾角的方法
CN106866700A (zh) * 2017-04-21 2017-06-20 黄河科技学院 2,6二溴苯并[1,2‑b:4,5‑b]二噻酚‑4,8‑二酮的高效合成方法
CN107698742A (zh) * 2017-06-14 2018-02-16 中南大学 苯并二噻吩二酮基共轭微孔聚合物制备及其光催化应用
CN116199707A (zh) * 2023-03-07 2023-06-02 南京邮电大学 一类苯并二噻吩衍生物及其制备和应用
CN116199707B (zh) * 2023-03-07 2024-12-06 南京邮电大学 一类苯并二噻吩衍生物及其制备和应用

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TWI482776B (zh) 2015-05-01
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