CN101479850B - 寻-扫探针(ssp)存储设备的位擦除体系结构 - Google Patents
寻-扫探针(ssp)存储设备的位擦除体系结构 Download PDFInfo
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- CN101479850B CN101479850B CN2007800238342A CN200780023834A CN101479850B CN 101479850 B CN101479850 B CN 101479850B CN 2007800238342 A CN2007800238342 A CN 2007800238342A CN 200780023834 A CN200780023834 A CN 200780023834A CN 101479850 B CN101479850 B CN 101479850B
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- 229910052737 gold Inorganic materials 0.000 description 1
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- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 1
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
- G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
- G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/477,276 US7750333B2 (en) | 2006-06-28 | 2006-06-28 | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
US11/477,276 | 2006-06-28 | ||
PCT/US2007/072163 WO2008002943A1 (en) | 2006-06-28 | 2007-06-26 | Bit-erasing architecture for seek-scan probe (ssp) memory storage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101479850A CN101479850A (zh) | 2009-07-08 |
CN101479850B true CN101479850B (zh) | 2011-08-17 |
Family
ID=38845974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800238342A Expired - Fee Related CN101479850B (zh) | 2006-06-28 | 2007-06-26 | 寻-扫探针(ssp)存储设备的位擦除体系结构 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7750333B2 (ko) |
JP (1) | JP5057589B2 (ko) |
KR (1) | KR101017489B1 (ko) |
CN (1) | CN101479850B (ko) |
GB (1) | GB2453283B (ko) |
TW (1) | TWI349999B (ko) |
WO (1) | WO2008002943A1 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1764847B1 (en) * | 2005-09-14 | 2008-12-24 | STMicroelectronics S.r.l. | Ring heater for a phase change memory device |
US7646006B2 (en) | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
US7545667B2 (en) * | 2006-03-30 | 2009-06-09 | International Business Machines Corporation | Programmable via structure for three dimensional integration technology |
US7750333B2 (en) | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
US7622780B2 (en) * | 2006-12-21 | 2009-11-24 | Intel Corporation | Seek-scan probe (SSP) including see-saw scan probe with redundant tip |
US7633079B2 (en) * | 2007-09-06 | 2009-12-15 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material |
US7782649B2 (en) * | 2007-12-20 | 2010-08-24 | Intel Corporation | Using controlled bias voltage for data retention enhancement in a ferroelectric media |
US8130533B2 (en) * | 2008-10-03 | 2012-03-06 | International Business Machines Corporation | Thermoelectric device and method |
US8217478B2 (en) * | 2008-10-10 | 2012-07-10 | Seagate Technology Llc | Magnetic stack with oxide to reduce switching current |
US8458804B1 (en) | 2011-12-29 | 2013-06-04 | Elwha Llc | Systems and methods for preventing data remanence in memory |
US8966866B2 (en) * | 2012-04-13 | 2015-03-03 | Dr. Py Institute Llc | Modular filling apparatus and method |
WO2020012916A1 (ja) * | 2018-07-10 | 2020-01-16 | 国立研究開発法人産業技術総合研究所 | 積層構造体及びその製造方法並びに半導体デバイス |
CN111083817B (zh) * | 2019-12-20 | 2022-08-12 | 华中科技大学鄂州工业技术研究院 | 一种非线性透射光处理器 |
US11437102B1 (en) * | 2021-03-05 | 2022-09-06 | International Business Machines Corporation | Memory erasure using proximity heaters |
US20240237560A1 (en) * | 2023-01-06 | 2024-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase-change memory device with tapered thermal transfer layer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574410A (zh) * | 2003-05-23 | 2005-02-02 | 三星电子株式会社 | 半导体存储器件及其制造方法 |
US6894305B2 (en) * | 2003-02-24 | 2005-05-17 | Samsung Electronics Co., Ltd. | Phase-change memory devices with a self-heater structure |
US6943395B2 (en) * | 2003-06-04 | 2005-09-13 | Samsung Electronics Co., Ltd. | Phase random access memory with high density |
CN1714405A (zh) * | 2002-12-13 | 2005-12-28 | 奥沃尼克斯股份有限公司 | 形成相变存储器 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3817032B2 (ja) * | 1997-07-22 | 2006-08-30 | シャープ株式会社 | プローブ及びその製造方法とプローブ型メモリ |
JP2003034081A (ja) | 2000-09-14 | 2003-02-04 | Ricoh Co Ltd | 相変化型光情報記録媒体 |
NZ527033A (en) * | 2001-01-16 | 2005-04-29 | Berkshire Lab Inc | Enhanced data storage and retrieval devices and systems and methods by optical means or by utilising a stored magnetic field strength to cause an amount of shifting of at least one frequency |
US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
US6566700B2 (en) * | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
AU2003201760A1 (en) * | 2002-04-04 | 2003-10-20 | Kabushiki Kaisha Toshiba | Phase-change memory device |
GB2407705A (en) | 2002-08-21 | 2005-05-04 | Ovonyx Inc | Utilizing atomic layer deposition for programmable device |
US7129560B2 (en) * | 2003-03-31 | 2006-10-31 | International Business Machines Corporation | Thermal memory cell and memory device including the thermal memory cell |
JP4103136B2 (ja) * | 2003-04-23 | 2008-06-18 | 船井電機株式会社 | データ記録再生装置 |
JP4634014B2 (ja) * | 2003-05-22 | 2011-02-16 | 株式会社日立製作所 | 半導体記憶装置 |
US20060006472A1 (en) | 2003-06-03 | 2006-01-12 | Hai Jiang | Phase change memory with extra-small resistors |
US6987688B2 (en) * | 2003-06-11 | 2006-01-17 | Ovonyx, Inc. | Die customization using programmable resistance memory elements |
EP1710807B1 (en) * | 2005-04-08 | 2008-11-26 | STMicroelectronics S.r.l. | Phase change memory cell with tubular heater and manufacturing method thereof |
US20060249724A1 (en) * | 2005-05-06 | 2006-11-09 | International Business Machines Corporation | Method and structure for Peltier-controlled phase change memory |
JP2007273618A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 抵抗変化メモリ装置 |
US7750333B2 (en) | 2006-06-28 | 2010-07-06 | Intel Corporation | Bit-erasing architecture for seek-scan probe (SSP) memory storage |
-
2006
- 2006-06-28 US US11/477,276 patent/US7750333B2/en not_active Expired - Fee Related
-
2007
- 2007-06-26 CN CN2007800238342A patent/CN101479850B/zh not_active Expired - Fee Related
- 2007-06-26 GB GB0822743.1A patent/GB2453283B/en not_active Expired - Fee Related
- 2007-06-26 JP JP2009510202A patent/JP5057589B2/ja not_active Expired - Fee Related
- 2007-06-26 WO PCT/US2007/072163 patent/WO2008002943A1/en active Application Filing
- 2007-06-26 KR KR1020087030503A patent/KR101017489B1/ko active IP Right Grant
- 2007-06-27 TW TW096123339A patent/TWI349999B/zh not_active IP Right Cessation
-
2009
- 2009-12-04 US US12/631,265 patent/US8338813B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1714405A (zh) * | 2002-12-13 | 2005-12-28 | 奥沃尼克斯股份有限公司 | 形成相变存储器 |
US6894305B2 (en) * | 2003-02-24 | 2005-05-17 | Samsung Electronics Co., Ltd. | Phase-change memory devices with a self-heater structure |
CN1574410A (zh) * | 2003-05-23 | 2005-02-02 | 三星电子株式会社 | 半导体存储器件及其制造方法 |
US6943395B2 (en) * | 2003-06-04 | 2005-09-13 | Samsung Electronics Co., Ltd. | Phase random access memory with high density |
Also Published As
Publication number | Publication date |
---|---|
GB2453283A (en) | 2009-04-01 |
US20100080051A1 (en) | 2010-04-01 |
KR20090027208A (ko) | 2009-03-16 |
TW200818488A (en) | 2008-04-16 |
JP5057589B2 (ja) | 2012-10-24 |
GB2453283B (en) | 2012-01-11 |
GB0822743D0 (en) | 2009-01-21 |
US20080012094A1 (en) | 2008-01-17 |
KR101017489B1 (ko) | 2011-02-25 |
JP2009536466A (ja) | 2009-10-08 |
US8338813B2 (en) | 2012-12-25 |
US7750333B2 (en) | 2010-07-06 |
TWI349999B (en) | 2011-10-01 |
CN101479850A (zh) | 2009-07-08 |
WO2008002943A1 (en) | 2008-01-03 |
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