CN101479850B - 寻-扫探针（ssp）存储设备的位擦除体系结构 - Google Patents

寻-扫探针（ssp）存储设备的位擦除体系结构 Download PDF

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Publication number
CN101479850B
CN101479850B CN2007800238342A CN200780023834A CN101479850B CN 101479850 B CN101479850 B CN 101479850B CN 2007800238342 A CN2007800238342 A CN 2007800238342A CN 200780023834 A CN200780023834 A CN 200780023834A CN 101479850 B CN101479850 B CN 101479850B
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layer
heater
phase change
phase
electrode
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Expired - Fee Related
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CN2007800238342A
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English (en)
Chinese (zh)
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CN101479850A (zh
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Q·马
V·R·劳
T·A·仇
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Intel Corp
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Intel Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Micromachines (AREA)
CN2007800238342A 2006-06-28 2007-06-26 寻-扫探针（ssp）存储设备的位擦除体系结构 Expired - Fee Related CN101479850B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/477,276 US7750333B2 (en) 2006-06-28 2006-06-28 Bit-erasing architecture for seek-scan probe (SSP) memory storage
US11/477,276 2006-06-28
PCT/US2007/072163 WO2008002943A1 (en) 2006-06-28 2007-06-26 Bit-erasing architecture for seek-scan probe (ssp) memory storage

Publications (2)

Publication Number Publication Date
CN101479850A CN101479850A (zh) 2009-07-08
CN101479850B true CN101479850B (zh) 2011-08-17

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CN2007800238342A Expired - Fee Related CN101479850B (zh) 2006-06-28 2007-06-26 寻-扫探针（ssp）存储设备的位擦除体系结构

Country Status (7)

Country Link
US (2) US7750333B2 (ko)
JP (1) JP5057589B2 (ko)
KR (1) KR101017489B1 (ko)
CN (1) CN101479850B (ko)
GB (1) GB2453283B (ko)
TW (1) TWI349999B (ko)
WO (1) WO2008002943A1 (ko)

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EP1764847B1 (en) * 2005-09-14 2008-12-24 STMicroelectronics S.r.l. Ring heater for a phase change memory device
US7646006B2 (en) 2006-03-30 2010-01-12 International Business Machines Corporation Three-terminal cascade switch for controlling static power consumption in integrated circuits
US7545667B2 (en) * 2006-03-30 2009-06-09 International Business Machines Corporation Programmable via structure for three dimensional integration technology
US7750333B2 (en) 2006-06-28 2010-07-06 Intel Corporation Bit-erasing architecture for seek-scan probe (SSP) memory storage
US7622780B2 (en) * 2006-12-21 2009-11-24 Intel Corporation Seek-scan probe (SSP) including see-saw scan probe with redundant tip
US7633079B2 (en) * 2007-09-06 2009-12-15 International Business Machines Corporation Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material
US7782649B2 (en) * 2007-12-20 2010-08-24 Intel Corporation Using controlled bias voltage for data retention enhancement in a ferroelectric media
US8130533B2 (en) * 2008-10-03 2012-03-06 International Business Machines Corporation Thermoelectric device and method
US8217478B2 (en) * 2008-10-10 2012-07-10 Seagate Technology Llc Magnetic stack with oxide to reduce switching current
US8458804B1 (en) 2011-12-29 2013-06-04 Elwha Llc Systems and methods for preventing data remanence in memory
US8966866B2 (en) * 2012-04-13 2015-03-03 Dr. Py Institute Llc Modular filling apparatus and method
WO2020012916A1 (ja) * 2018-07-10 2020-01-16 国立研究開発法人産業技術総合研究所 積層構造体及びその製造方法並びに半導体デバイス
CN111083817B (zh) * 2019-12-20 2022-08-12 华中科技大学鄂州工业技术研究院 一种非线性透射光处理器
US11437102B1 (en) * 2021-03-05 2022-09-06 International Business Machines Corporation Memory erasure using proximity heaters
US20240237560A1 (en) * 2023-01-06 2024-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Phase-change memory device with tapered thermal transfer layer

Citations (4)

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CN1574410A (zh) * 2003-05-23 2005-02-02 三星电子株式会社 半导体存储器件及其制造方法
US6894305B2 (en) * 2003-02-24 2005-05-17 Samsung Electronics Co., Ltd. Phase-change memory devices with a self-heater structure
US6943395B2 (en) * 2003-06-04 2005-09-13 Samsung Electronics Co., Ltd. Phase random access memory with high density
CN1714405A (zh) * 2002-12-13 2005-12-28 奥沃尼克斯股份有限公司 形成相变存储器

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JP3817032B2 (ja) * 1997-07-22 2006-08-30 シャープ株式会社 プローブ及びその製造方法とプローブ型メモリ
JP2003034081A (ja) 2000-09-14 2003-02-04 Ricoh Co Ltd 相変化型光情報記録媒体
NZ527033A (en) * 2001-01-16 2005-04-29 Berkshire Lab Inc Enhanced data storage and retrieval devices and systems and methods by optical means or by utilising a stored magnetic field strength to cause an amount of shifting of at least one frequency
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
AU2003201760A1 (en) * 2002-04-04 2003-10-20 Kabushiki Kaisha Toshiba Phase-change memory device
GB2407705A (en) 2002-08-21 2005-05-04 Ovonyx Inc Utilizing atomic layer deposition for programmable device
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JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
US20060006472A1 (en) 2003-06-03 2006-01-12 Hai Jiang Phase change memory with extra-small resistors
US6987688B2 (en) * 2003-06-11 2006-01-17 Ovonyx, Inc. Die customization using programmable resistance memory elements
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US6894305B2 (en) * 2003-02-24 2005-05-17 Samsung Electronics Co., Ltd. Phase-change memory devices with a self-heater structure
CN1574410A (zh) * 2003-05-23 2005-02-02 三星电子株式会社 半导体存储器件及其制造方法
US6943395B2 (en) * 2003-06-04 2005-09-13 Samsung Electronics Co., Ltd. Phase random access memory with high density

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Publication number Publication date
GB2453283A (en) 2009-04-01
US20100080051A1 (en) 2010-04-01
KR20090027208A (ko) 2009-03-16
TW200818488A (en) 2008-04-16
JP5057589B2 (ja) 2012-10-24
GB2453283B (en) 2012-01-11
GB0822743D0 (en) 2009-01-21
US20080012094A1 (en) 2008-01-17
KR101017489B1 (ko) 2011-02-25
JP2009536466A (ja) 2009-10-08
US8338813B2 (en) 2012-12-25
US7750333B2 (en) 2010-07-06
TWI349999B (en) 2011-10-01
CN101479850A (zh) 2009-07-08
WO2008002943A1 (en) 2008-01-03

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