CN101471241B - 真空装置、真空处理系统以及真空室的压力控制方法 - Google Patents
真空装置、真空处理系统以及真空室的压力控制方法 Download PDFInfo
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- CN101471241B CN101471241B CN2008101888363A CN200810188836A CN101471241B CN 101471241 B CN101471241 B CN 101471241B CN 2008101888363 A CN2008101888363 A CN 2008101888363A CN 200810188836 A CN200810188836 A CN 200810188836A CN 101471241 B CN101471241 B CN 101471241B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007333439A JP5059583B2 (ja) | 2007-12-26 | 2007-12-26 | 真空装置、真空処理システムおよび真空室の圧力制御方法 |
JP2007-333439 | 2007-12-26 | ||
JP2007333439 | 2007-12-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101471241A CN101471241A (zh) | 2009-07-01 |
CN101471241B true CN101471241B (zh) | 2011-07-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2008101888363A Active CN101471241B (zh) | 2007-12-26 | 2008-12-26 | 真空装置、真空处理系统以及真空室的压力控制方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5059583B2 (ja) |
KR (1) | KR101033055B1 (ja) |
CN (1) | CN101471241B (ja) |
TW (1) | TWI471896B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4914486B2 (ja) * | 2009-12-25 | 2012-04-11 | シーケーディ株式会社 | 電動真空弁による排気速度制御方法、電動真空弁による排気速度制御システム、排気速度制御に用いられる電動真空弁の弁開度設定点決定方法、及び、排気速度制御に用いられる排気速度決定プログラム |
TWI490673B (zh) * | 2012-01-04 | 2015-07-01 | King Yuan Electronics Co Ltd | 測試壓力控制系統與方法 |
CN106876304B (zh) * | 2017-02-24 | 2019-09-10 | 成都京东方光电科技有限公司 | 一种湿法刻蚀排气系统及湿法刻蚀装置 |
WO2019037871A1 (en) * | 2017-08-25 | 2019-02-28 | Applied Materials, Inc. | APPARATUS FOR TRANSPORTING A CARRIER, SYSTEM FOR VACUUM PROCESSING OF A SUBSTRATE, AND METHOD FOR TRANSPORTING A SUBSTRATE CARRIER IN A VACUUM CHAMBER |
CN109110418A (zh) * | 2018-10-24 | 2019-01-01 | 爱发科真空技术(沈阳)有限公司 | 一种压力可控搬送室结构 |
CN110512190B (zh) * | 2019-09-25 | 2022-02-15 | 上海华力微电子有限公司 | 集成气动阀组的改装机构、气动阀组装置、气相沉积设备 |
CN112768330B (zh) * | 2019-10-21 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 一种防止反应气体泄露的等离子体处理装置及其方法 |
JP7327425B2 (ja) * | 2021-02-19 | 2023-08-16 | 株式会社ダイフク | 搬送設備 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6394109B1 (en) * | 1999-04-13 | 2002-05-28 | Applied Materials, Inc. | Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system |
US7052576B2 (en) * | 2002-01-17 | 2006-05-30 | Samsung Electronics Co., Ltd. | Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber |
CN1925110A (zh) * | 2005-09-02 | 2007-03-07 | 东京毅力科创株式会社 | 真空处理装置 |
CN101034677A (zh) * | 2006-03-08 | 2007-09-12 | 平田机工株式会社 | 装料口 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05196150A (ja) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | ゲートバルブ |
JPH05243165A (ja) * | 1992-03-03 | 1993-09-21 | Fujitsu Ltd | 真空装置及び半導体装置の製造方法 |
JP3486821B2 (ja) * | 1994-01-21 | 2004-01-13 | 東京エレクトロン株式会社 | 処理装置及び処理装置内の被処理体の搬送方法 |
JPH0932803A (ja) * | 1995-07-20 | 1997-02-04 | Hitachi Ltd | エアーシリンダー及びそれを用いた搬送装置及び半導体製造装置 |
JPH10242238A (ja) * | 1997-02-28 | 1998-09-11 | Nikon Corp | 試料搬送装置 |
KR100271758B1 (ko) * | 1997-06-25 | 2001-01-15 | 윤종용 | 반도체장치 제조설비 및 이의 구동방법 |
JP3076775B2 (ja) * | 1997-07-31 | 2000-08-14 | 芝浦メカトロニクス株式会社 | 真空処理装置 |
JP3866840B2 (ja) * | 1997-10-28 | 2007-01-10 | 三機工業株式会社 | 不活性ガス供給設備 |
JP2002313869A (ja) * | 2001-04-11 | 2002-10-25 | Sony Corp | 真空処理装置及び真空処理方法 |
JP2003306771A (ja) * | 2002-04-17 | 2003-10-31 | Ulvac Japan Ltd | グローブボックス付き成膜装置 |
JP4798981B2 (ja) * | 2004-10-28 | 2011-10-19 | 東京エレクトロン株式会社 | 基板処理装置の制御方法,基板処理装置,基板処理装置の制御を行うプログラム |
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2007
- 2007-12-26 JP JP2007333439A patent/JP5059583B2/ja active Active
-
2008
- 2008-12-24 KR KR1020080133089A patent/KR101033055B1/ko active IP Right Grant
- 2008-12-25 TW TW97150691A patent/TWI471896B/zh active
- 2008-12-26 CN CN2008101888363A patent/CN101471241B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6394109B1 (en) * | 1999-04-13 | 2002-05-28 | Applied Materials, Inc. | Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system |
US7052576B2 (en) * | 2002-01-17 | 2006-05-30 | Samsung Electronics Co., Ltd. | Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber |
CN1925110A (zh) * | 2005-09-02 | 2007-03-07 | 东京毅力科创株式会社 | 真空处理装置 |
CN101034677A (zh) * | 2006-03-08 | 2007-09-12 | 平田机工株式会社 | 装料口 |
Also Published As
Publication number | Publication date |
---|---|
CN101471241A (zh) | 2009-07-01 |
TWI471896B (zh) | 2015-02-01 |
KR20090071436A (ko) | 2009-07-01 |
JP2009158627A (ja) | 2009-07-16 |
TW200945410A (en) | 2009-11-01 |
KR101033055B1 (ko) | 2011-05-06 |
JP5059583B2 (ja) | 2012-10-24 |
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