CN101460652A - 具有基于TiO2的溅射材料的溅射靶及其制备方法 - Google Patents

具有基于TiO2的溅射材料的溅射靶及其制备方法 Download PDF

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CN101460652A
CN101460652A CNA200780021039XA CN200780021039A CN101460652A CN 101460652 A CN101460652 A CN 101460652A CN A200780021039X A CNA200780021039X A CN A200780021039XA CN 200780021039 A CN200780021039 A CN 200780021039A CN 101460652 A CN101460652 A CN 101460652A
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马丁·魏格特
克里斯托夫·西蒙斯
埃克哈特·曼勒
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Abstract

本发明涉及一种具有基于TiO2的溅射材料的溅射靶，该溅射材料含有15摩尔％－60摩尔％的Nb2O5。本发明还涉及溅射靶的制备方法，该方法包括下列步骤：将TiO2和Nb2O5粉末混合成液体浆料；将这种浆料进行喷雾造粒，以形成TiO2:Nb2O5混合氧化物颗粒；将这种颗粒等离子喷涂在溅射靶基体上。

Description

具有基于TiO2的溅射材料的溅射靶及其制备方法
本发明涉及一种具有基于TiO2的溅射材料的溅射靶以及这种溅射靶的制备方法。
TiO2溅射靶用于制备玻璃涂层(防热和气候防护用玻璃)中的高折射率层、用于制备滤光器、以及用于减反射应用中。在这些应用中，通常将其连同其它金属和金属氧化物层一起溅射在玻璃基底上。这样，可通过所谓的反应溅射方法(Reaktivprozesses)，利用金属钛靶并加入氧气，从而溅射得到TiO2层。然而，利用TiO2氧化物靶，则可以利用简单的、可控的溅射方法(直流溅射或DC溅射)，同时无需或至少大大减少向溅射工艺室内供应作为反应气体的氧气。这样，在很大程度上防止了氧气对相邻溅射室的污染。然而，相应的TiO2靶材的溅射速率低于其它金属氧化物靶(例如，ZnO)的溅射速率。
例如，在专利文献EP 0871 794 B1中描述了这种靶。在该专利文献中，描述了一种含有25重量％(相当于9.1摩尔％)的Nb2O5的TiO2靶。未发现溅射速率得到提高。靶的电阻率等于0.5Ω·cm。
专利文献DE 199 58 424 C2描述了含有0.1重量％-5重量％的Ti、Nb、Cr、Mo、或Ta(相当于0.09原子％-4.3原子％的Nb)的TiO2靶。然而，在此列举的用于靶的混合物均具有金属特性，其会在溅射过程中在溅射表面上表现出不均匀性，因而对溅射行为产生不利的影响。
专利文献JP 2001058871描述了一种含有0.05重量％-10重量％(相当于0.01摩尔％-3.2摩尔％)的Nb2O5并被制成烧结体的TiO2靶，该靶的溅射速率得到提高，但同时所制备的层的透光率却大大降低。
本发明基于制得这样一种溅射靶的目的，该溅射靶的溅射速率可得到提高，以用于制备高折射率的透光层。
通过独立权利要求的特征可实现这一目的。从属权利要求中给出了优选的实施例。令人惊奇的是，由TiO2和Nb2O5制成的靶表现出的溅射速率达到纯TiO2靶的两倍(同时降低了能耗，并且制备的层的透射率较高)。可以制备出非常均匀和光滑的层，并且在溅射过程中不会有粉尘形成。获得80％-90％的高透射率。溅射靶的溅射材料包含15摩尔％-60摩尔％的Nb2O5或1摩尔％-60摩尔％的Nb2O5(优选为15摩尔％-40摩尔％的Nb2O5)和0.02摩尔％-1摩尔％的In2O3。优选地，溅射材料具有<0.4Ω·cm的电阻率。
本发明的方法包括下列步骤：
-将TiO2和Nb2O5粉末混合成液体浆料；
-将这种浆料进行喷雾造粒，以形成TiO2:Nb2O5混合氧化物颗粒；
-将这种颗粒等离子喷涂或烧结在溅射靶基体上。
喷雾造粒确保了粉末被更充分地混合，并具有这样的效果，即，在等离子喷涂或烧结之后，TiO2和Nb2O5形成均匀的混合物。
下面，将参照实施例对本发明进行阐述。图1示出了溅射速率与组成之间的关系。
实施例1
将TiO2与30摩尔％的Nb2O5粉末一同进行造粒。作为造粒的方法，烧结凝聚造粒或喷雾造粒已证实是有效的方法。由制得的颗粒筛选出<200μm的颗粒，并通过大气等离子喷涂将其喷涂在溅射靶体上。制备出直径为150mm且溅射材料层厚为2mm的溅射靶。溅射靶的电阻率的最大值是0.4Ω·cm。在直流溅射系统中将溅射靶与用相应方式制备的纯TiO2溅射靶一起测试。制备100nm厚的层。溅射结果列于表1a/1b。
 表1a
 
TiO2对照物 ％O ％Ar E[kWh] 溅射速率[nm/min]
0 100 88 3.0
10 90 88 3.1
20 80 88 3.1
30 70 92 3.1
表1b
 
TiO2:Nb2O530摩尔％ ％O ％Ar E[kWh] 溅射速率[nm/min]
0 100 27 11.6
10 90 38 8.1
20 80 51 5.8
30 70 55 5.5
制得的层极其光滑且均匀，其粗糙度RMS<1nm。层的结构主要是无定形的。在500nm处，其表现出的透射率为80％-90％。在80％-100％Ar的条件下，溅射形成的层所达到的透射率在85％-90％之间。与此相比较，未经涂覆的玻璃的透射率是92％。
实施例2
与实施例1相似，制备出具有不同TiO2:Nb2O5浓度的靶并进行直流溅射。图1示出了标准化的溅射速率与组成之间的函数关系的结果。特别是，当Nb2O5含量大约在15摩尔％-50摩尔％之间时，得到了高溅射速率。
实施例3
由掺杂了0.05摩尔％的In2O3的Ti2O3:Nb2O520摩尔％制备颗粒，然后将其热压成盘状。此时，得到的密度值为大约4.4g/cm3。电阻率<0.1Ω·cm。

Claims (5)

1.一种溅射靶，其包含基于TiO2的溅射材料，其特征在于，所述溅射材料含有15摩尔％-60摩尔％的Nb2O5。
2.一种溅射靶，其包含基于TiO2的溅射材料，其特征在于，所述溅射材料含有1摩尔％-60摩尔％的Nb2O5和0.02摩尔％-1摩尔％的In2O3。
3.根据权利要求1或2所述的溅射靶，其特征在于，所述溅射材料具有<0.4Ω·cm的电阻率。
4.根据权利要求2或3所述的溅射靶，其特征在于，所述溅射材料含有15摩尔％-40摩尔％的Nb2O5。
5.根据权利要求1至4中的一项所述的溅射靶的制备方法，包括下列步骤：
将TiO2和Nb2O5粉末混合成液体浆料；
将这种浆料进行喷雾造粒，以形成TiO2：Nb2O5混合氧化物颗粒；
将这种颗粒等离子喷涂在溅射靶基体上。
CNA200780021039XA 2006-06-09 2007-06-06 具有基于TiO2的溅射材料的溅射靶及其制备方法 Pending CN101460652A (zh)

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Cited By (5)

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CN102320824A (zh) * 2011-06-01 2012-01-18 内蒙古工业大学 一种金属离子掺杂二氧化钛靶材的制备方法以及由此获得的靶材
CN102021515B (zh) * 2009-09-16 2012-07-25 中国科学院金属研究所 一种玻璃镀膜靶材及其制备方法
CN102816988A (zh) * 2012-07-30 2012-12-12 常州大学 一种具有生物活性的氧化钛-氧化铌复合涂层的制备方法
CN109752782A (zh) * 2019-03-12 2019-05-14 江南大学 基于多层金属介质薄膜的角度不敏感颜色滤波器
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2316801A1 (fr) * 2009-10-16 2011-05-04 AGC Glass Europe Feuille de verre revetue
EP2314553A1 (fr) * 2009-10-16 2011-04-27 AGC Glass Europe Vitrage réflechissant émaille
SG174652A1 (en) 2010-03-31 2011-10-28 Heraeus Gmbh W C Composition of sputtering target, sputtering target, and method of producing the same
JP2019137575A (ja) * 2018-02-08 2019-08-22 日本電気硝子株式会社 カバー部材及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0852266B1 (en) * 1995-08-23 2004-10-13 Asahi Glass Ceramics Co., Ltd. Target, process for production thereof, and method of forming highly refractive film
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
JP2001058871A (ja) * 1999-08-23 2001-03-06 Kyocera Corp 導電性酸化チタン焼結体とその製造方法及びこれを用いたスパッタリングターゲット
DE19958424C2 (de) * 1999-12-03 2002-05-29 Zentrum Fuer Material Und Umwe Zerstäubungstarget für die Dünnbeschichtung großflächiger Substrate und Verfahren zu seiner Herstellung
JP3708429B2 (ja) * 2000-11-30 2005-10-19 Ｈｏｙａ株式会社 蒸着組成物の製造方法、蒸着組成物及び反射防止膜を有する光学部品の製造方法
JP4711619B2 (ja) * 2003-12-19 2011-06-29 京セラ株式会社 導電性酸化チタン焼結体、スパッタリングターゲット、透光性部材、および画像表示装置
US7429427B2 (en) * 2004-12-06 2008-09-30 Seagate Technology Llc Granular magnetic recording media with improved grain segregation and corrosion resistance

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CN102021515B (zh) * 2009-09-16 2012-07-25 中国科学院金属研究所 一种玻璃镀膜靶材及其制备方法
CN102320824A (zh) * 2011-06-01 2012-01-18 内蒙古工业大学 一种金属离子掺杂二氧化钛靶材的制备方法以及由此获得的靶材
CN102320824B (zh) * 2011-06-01 2013-06-12 内蒙古工业大学 一种金属离子掺杂二氧化钛靶材的制备方法以及由此获得的靶材
CN102816988A (zh) * 2012-07-30 2012-12-12 常州大学 一种具有生物活性的氧化钛-氧化铌复合涂层的制备方法
CN102816988B (zh) * 2012-07-30 2014-10-29 常州大学 一种具有生物活性的氧化钛-氧化铌复合涂层的制备方法
CN109752782A (zh) * 2019-03-12 2019-05-14 江南大学 基于多层金属介质薄膜的角度不敏感颜色滤波器
CN116178006A (zh) * 2023-03-06 2023-05-30 深圳市众诚达应用材料科技有限公司 一种高导电性氧化钛靶材及其制备方法

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