CN101459139B - 电荷囚禁器件的制作工艺方法 - Google Patents
电荷囚禁器件的制作工艺方法 Download PDFInfo
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- CN101459139B CN101459139B CN2007100944164A CN200710094416A CN101459139B CN 101459139 B CN101459139 B CN 101459139B CN 2007100944164 A CN2007100944164 A CN 2007100944164A CN 200710094416 A CN200710094416 A CN 200710094416A CN 101459139 B CN101459139 B CN 101459139B
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CN2007100944164A CN101459139B (zh) | 2007-12-10 | 2007-12-10 | 电荷囚禁器件的制作工艺方法 |
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CN2007100944164A CN101459139B (zh) | 2007-12-10 | 2007-12-10 | 电荷囚禁器件的制作工艺方法 |
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CN101459139A CN101459139A (zh) | 2009-06-17 |
CN101459139B true CN101459139B (zh) | 2010-11-03 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111883537B (zh) * | 2020-08-31 | 2023-10-24 | 上海华虹宏力半导体制造有限公司 | 嵌入式镜像位sonos存储器的工艺方法 |
CN111883536B (zh) * | 2020-08-31 | 2023-10-24 | 上海华虹宏力半导体制造有限公司 | 嵌入式镜像位sonos存储器的工艺方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6551880B1 (en) * | 2002-05-17 | 2003-04-22 | Macronix International Co., Ltd. | Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory |
CN1747150A (zh) * | 2004-09-10 | 2006-03-15 | 联华电子股份有限公司 | 制作分离编程虚拟接地sonos型存储器的方法 |
CN1945851A (zh) * | 2005-10-04 | 2007-04-11 | 台湾积体电路制造股份有限公司 | Sonos栅极结构及其形成方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6551880B1 (en) * | 2002-05-17 | 2003-04-22 | Macronix International Co., Ltd. | Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory |
CN1747150A (zh) * | 2004-09-10 | 2006-03-15 | 联华电子股份有限公司 | 制作分离编程虚拟接地sonos型存储器的方法 |
CN1945851A (zh) * | 2005-10-04 | 2007-04-11 | 台湾积体电路制造股份有限公司 | Sonos栅极结构及其形成方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |