CN101438394B - 集成源/漏应激体和层间电介质层应激体的半导体工艺 - Google Patents

集成源/漏应激体和层间电介质层应激体的半导体工艺 Download PDF

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Publication number
CN101438394B
CN101438394B CN2007800065911A CN200780006591A CN101438394B CN 101438394 B CN101438394 B CN 101438394B CN 2007800065911 A CN2007800065911 A CN 2007800065911A CN 200780006591 A CN200780006591 A CN 200780006591A CN 101438394 B CN101438394 B CN 101438394B
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China
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source
drain
stressor
semiconductor
isolation structures
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Expired - Fee Related
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CN2007800065911A
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English (en)
Chinese (zh)
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CN101438394A (zh
Inventor
张达
万司·H·亚当斯
比希-安·阮
保罗·A·格吕多斯基
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/795—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in lateral device isolation regions, e.g. STI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
CN2007800065911A 2006-02-24 2007-02-08 集成源/漏应激体和层间电介质层应激体的半导体工艺 Expired - Fee Related CN101438394B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/361,171 2006-02-24
US11/361,171 US7538002B2 (en) 2006-02-24 2006-02-24 Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
PCT/US2007/061841 WO2007103609A2 (en) 2006-02-24 2007-02-08 Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors

Publications (2)

Publication Number Publication Date
CN101438394A CN101438394A (zh) 2009-05-20
CN101438394B true CN101438394B (zh) 2010-09-08

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CN2007800065911A Expired - Fee Related CN101438394B (zh) 2006-02-24 2007-02-08 集成源/漏应激体和层间电介质层应激体的半导体工艺

Country Status (6)

Country Link
US (1) US7538002B2 (enExample)
EP (1) EP1989729B1 (enExample)
JP (1) JP5225108B2 (enExample)
KR (1) KR101357986B1 (enExample)
CN (1) CN101438394B (enExample)
WO (1) WO2007103609A2 (enExample)

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* Cited by examiner, † Cited by third party
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US7465972B2 (en) 2005-01-21 2008-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. High performance CMOS device design
US7572705B1 (en) * 2005-09-21 2009-08-11 Advanced Micro Devices, Inc. Semiconductor device and method of manufacturing a semiconductor device
US7323392B2 (en) * 2006-03-28 2008-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. High performance transistor with a highly stressed channel
US9209088B2 (en) * 2007-08-01 2015-12-08 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US8003454B2 (en) * 2008-05-22 2011-08-23 Freescale Semiconductor, Inc. CMOS process with optimized PMOS and NMOS transistor devices
US20090289280A1 (en) * 2008-05-22 2009-11-26 Da Zhang Method for Making Transistors and the Device Thereof
JP5163311B2 (ja) * 2008-06-26 2013-03-13 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8361867B2 (en) * 2010-03-19 2013-01-29 Acorn Technologies, Inc. Biaxial strained field effect transistor devices
US8470674B2 (en) 2011-01-03 2013-06-25 International Business Machines Corporation Structure, method and system for complementary strain fill for integrated circuit chips
CN103377941B (zh) * 2012-04-28 2016-08-10 中芯国际集成电路制造(上海)有限公司 Pmos晶体管及形成方法
JP5712985B2 (ja) * 2012-08-27 2015-05-07 ソニー株式会社 半導体装置
US8928048B2 (en) * 2013-01-17 2015-01-06 Globalfoundries Inc. Methods of forming semiconductor device with self-aligned contact elements and the resulting device
KR102277398B1 (ko) * 2014-09-17 2021-07-16 삼성전자주식회사 반도체 소자 및 이의 제조 방법
WO2017099752A1 (en) * 2015-12-09 2017-06-15 Intel Corporation Stressors for compressively strained gan p-channel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350661B2 (en) * 1999-07-12 2002-02-26 Chartered Semiconductor Manufacturing Ltd. Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts

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US6649480B2 (en) 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6580122B1 (en) * 2001-03-20 2003-06-17 Advanced Micro Devices, Inc. Transistor device having an enhanced width dimension and a method of making same
EP1428262A2 (en) 2001-09-21 2004-06-16 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
US6621131B2 (en) 2001-11-01 2003-09-16 Intel Corporation Semiconductor transistor having a stressed channel
JP2004031753A (ja) * 2002-06-27 2004-01-29 Renesas Technology Corp 半導体装置の製造方法
US7101742B2 (en) * 2003-08-12 2006-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel complementary field-effect transistors and methods of manufacture
US7101765B2 (en) * 2004-03-31 2006-09-05 Intel Corporation Enhancing strained device performance by use of multi narrow section layout
US7413957B2 (en) * 2004-06-24 2008-08-19 Applied Materials, Inc. Methods for forming a transistor
US20060022264A1 (en) * 2004-07-30 2006-02-02 Leo Mathew Method of making a double gate semiconductor device with self-aligned gates and structure thereof
US20060030093A1 (en) 2004-08-06 2006-02-09 Da Zhang Strained semiconductor devices and method for forming at least a portion thereof
US6979622B1 (en) * 2004-08-24 2005-12-27 Freescale Semiconductor, Inc. Semiconductor transistor having structural elements of differing materials and method of formation
JP4369379B2 (ja) * 2005-02-18 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
WO2006111888A1 (en) * 2005-04-20 2006-10-26 Koninklijke Philips Electronics N.V. A strained integrated circuit and a method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350661B2 (en) * 1999-07-12 2002-02-26 Chartered Semiconductor Manufacturing Ltd. Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts

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Publication number Publication date
US20070202651A1 (en) 2007-08-30
EP1989729A4 (en) 2011-04-20
US7538002B2 (en) 2009-05-26
JP5225108B2 (ja) 2013-07-03
WO2007103609A2 (en) 2007-09-13
KR20080106910A (ko) 2008-12-09
JP2009527928A (ja) 2009-07-30
EP1989729B1 (en) 2013-04-10
WO2007103609A3 (en) 2008-12-31
CN101438394A (zh) 2009-05-20
KR101357986B1 (ko) 2014-02-03
EP1989729A2 (en) 2008-11-12

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