CN101395725B - 光电子半导体芯片 - Google Patents

光电子半导体芯片 Download PDF

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Publication number
CN101395725B
CN101395725B CN200680053614XA CN200680053614A CN101395725B CN 101395725 B CN101395725 B CN 101395725B CN 200680053614X A CN200680053614X A CN 200680053614XA CN 200680053614 A CN200680053614 A CN 200680053614A CN 101395725 B CN101395725 B CN 101395725B
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China
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substrate
semiconductor layer
semiconductor chip
layer sequence
layer
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CN200680053614XA
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Chinese (zh)
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CN101395725A (zh
Inventor
迈克尔·费雷尔
乌韦·施特劳斯
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
CN200680053614XA 2006-01-27 2006-12-20 光电子半导体芯片 Active CN101395725B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006004172 2006-01-27
DE102006004172.0 2006-01-27
DE102006015788.5 2006-04-04
DE102006015788A DE102006015788A1 (de) 2006-01-27 2006-04-04 Optoelektronischer Halbleiterchip
PCT/DE2006/002293 WO2007085218A1 (de) 2006-01-27 2006-12-20 Optoelektronischer halbleiterchip

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201010277177.8A Division CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Publications (2)

Publication Number Publication Date
CN101395725A CN101395725A (zh) 2009-03-25
CN101395725B true CN101395725B (zh) 2010-11-10

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CN200680053614XA Active CN101395725B (zh) 2006-01-27 2006-12-20 光电子半导体芯片
CN201010277177.8A Active CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Family Applications After (1)

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CN201010277177.8A Active CN101976718B (zh) 2006-01-27 2006-12-20 光电子半导体芯片

Country Status (8)

Country Link
US (1) US8581280B2 (enExample)
EP (1) EP1977457B1 (enExample)
JP (1) JP2009524918A (enExample)
KR (1) KR20080091249A (enExample)
CN (2) CN101395725B (enExample)
DE (1) DE102006015788A1 (enExample)
TW (1) TWI350597B (enExample)
WO (1) WO2007085218A1 (enExample)

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DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102007027641B4 (de) * 2007-06-15 2015-12-03 Huga Optotech Inc. Verfahren zum Herstellen einer Licht emittierenden Diode
DE102007035687A1 (de) * 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
JP5126884B2 (ja) * 2008-01-16 2013-01-23 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
DE102008006987A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
CN102047454B (zh) * 2008-04-16 2013-04-10 Lg伊诺特有限公司 发光器件及其制造方法
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2010192835A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2012004476A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 発光装置
DE102010031237A1 (de) 2010-07-12 2012-01-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010038405A1 (de) 2010-07-26 2012-01-26 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
DE102010039382A1 (de) 2010-08-17 2012-02-23 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
KR101274651B1 (ko) 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
JP6056150B2 (ja) * 2011-04-08 2017-01-11 日亜化学工業株式会社 半導体発光素子
DE102011080458A1 (de) 2011-08-04 2013-02-07 Osram Opto Semiconductors Gmbh Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
DE102011087543A1 (de) 2011-12-01 2013-06-06 Osram Opto Semiconductors Gmbh Optoelektronische anordnung
DE102012200416B4 (de) 2012-01-12 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls
GB201202222D0 (en) * 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
DE102012202102A1 (de) * 2012-02-13 2013-08-14 Osram Gmbh Leuchtvorrichtung mit Volumenstrahler-LED-Chips auf einem gemeinsamen Substrat
WO2013134432A1 (en) * 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US9501601B2 (en) 2013-03-14 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout optimization of a main pattern and a cut pattern
JP2015162631A (ja) * 2014-02-28 2015-09-07 サンケン電気株式会社 発光素子
DE102014107555A1 (de) * 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
DE102015103840A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierende Baugruppe
DE102016100563B4 (de) 2016-01-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung und optoelektronische Leuchtvorrichtung
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
DE102018115225A1 (de) * 2018-06-25 2020-01-02 Otto-Von-Guericke-Universität Magdeburg Lichtemmitierendes Halbleiterbauelement oder Halbleiterbauelementmodul

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Also Published As

Publication number Publication date
CN101976718A (zh) 2011-02-16
EP1977457A1 (de) 2008-10-08
CN101395725A (zh) 2009-03-25
TWI350597B (en) 2011-10-11
US20090315048A1 (en) 2009-12-24
KR20080091249A (ko) 2008-10-09
US8581280B2 (en) 2013-11-12
WO2007085218A1 (de) 2007-08-02
CN101976718B (zh) 2014-06-11
EP1977457B1 (de) 2018-05-09
JP2009524918A (ja) 2009-07-02
TW200737553A (en) 2007-10-01
DE102006015788A1 (de) 2007-09-13

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