TWI350597B - Optoelectronic semiconductor chip - Google Patents

Optoelectronic semiconductor chip

Info

Publication number
TWI350597B
TWI350597B TW096102767A TW96102767A TWI350597B TW I350597 B TWI350597 B TW I350597B TW 096102767 A TW096102767 A TW 096102767A TW 96102767 A TW96102767 A TW 96102767A TW I350597 B TWI350597 B TW I350597B
Authority
TW
Taiwan
Prior art keywords
semiconductor chip
optoelectronic semiconductor
optoelectronic
chip
semiconductor
Prior art date
Application number
TW096102767A
Other languages
English (en)
Other versions
TW200737553A (en
Inventor
Michael Fehrer
Uwe Strauss
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200737553A publication Critical patent/TW200737553A/zh
Application granted granted Critical
Publication of TWI350597B publication Critical patent/TWI350597B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
TW096102767A 2006-01-27 2007-01-25 Optoelectronic semiconductor chip TWI350597B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006004172 2006-01-27
DE102006015788A DE102006015788A1 (de) 2006-01-27 2006-04-04 Optoelektronischer Halbleiterchip

Publications (2)

Publication Number Publication Date
TW200737553A TW200737553A (en) 2007-10-01
TWI350597B true TWI350597B (en) 2011-10-11

Family

ID=37898325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102767A TWI350597B (en) 2006-01-27 2007-01-25 Optoelectronic semiconductor chip

Country Status (8)

Country Link
US (1) US8581280B2 (zh)
EP (1) EP1977457B1 (zh)
JP (1) JP2009524918A (zh)
KR (1) KR20080091249A (zh)
CN (2) CN101395725B (zh)
DE (1) DE102006015788A1 (zh)
TW (1) TWI350597B (zh)
WO (1) WO2007085218A1 (zh)

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DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102007027641B4 (de) * 2007-06-15 2015-12-03 Huga Optotech Inc. Verfahren zum Herstellen einer Licht emittierenden Diode
DE102007035687A1 (de) * 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
JP5126884B2 (ja) * 2008-01-16 2013-01-23 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
DE102008006987A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers
EP2280426B1 (en) * 2008-04-16 2017-07-05 LG Innotek Co., Ltd. Light-emitting device
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2010192835A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2012004476A (ja) * 2010-06-21 2012-01-05 Toshiba Corp 発光装置
DE102010031237A1 (de) 2010-07-12 2012-01-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102010038405A1 (de) 2010-07-26 2012-01-26 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
DE102010039382A1 (de) 2010-08-17 2012-02-23 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
KR101274651B1 (ko) 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
US8802461B2 (en) * 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
JP6056150B2 (ja) 2011-04-08 2017-01-11 日亜化学工業株式会社 半導体発光素子
DE102011080458A1 (de) 2011-08-04 2013-02-07 Osram Opto Semiconductors Gmbh Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung
DE102011087543A1 (de) 2011-12-01 2013-06-06 Osram Opto Semiconductors Gmbh Optoelektronische anordnung
DE102012200416B4 (de) 2012-01-12 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls
GB201202222D0 (en) * 2012-02-09 2012-03-28 Mled Ltd Enhanced light extraction
DE102012202102A1 (de) * 2012-02-13 2013-08-14 Osram Gmbh Leuchtvorrichtung mit Volumenstrahler-LED-Chips auf einem gemeinsamen Substrat
WO2013134432A1 (en) * 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US9501601B2 (en) 2013-03-14 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Layout optimization of a main pattern and a cut pattern
JP2015162631A (ja) * 2014-02-28 2015-09-07 サンケン電気株式会社 発光素子
DE102014107555A1 (de) 2014-05-28 2015-12-03 Osram Opto Semiconductors Gmbh Elektrische Kontaktstruktur für ein Halbleiterbauelement und Halbleiterbauelement
DE102015103840A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierende Baugruppe
DE102016100563B4 (de) 2016-01-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung und optoelektronische Leuchtvorrichtung
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
DE102018115225A1 (de) * 2018-06-25 2020-01-02 Otto-Von-Guericke-Universität Magdeburg Lichtemmitierendes Halbleiterbauelement oder Halbleiterbauelementmodul

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JP2005268601A (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Co Ltd 化合物半導体発光素子
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DE102004040277B4 (de) * 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
DE102004050891B4 (de) * 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
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DE102008030818B4 (de) * 2008-06-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender Halbleiterlaser mit mehreren aktiven Zonen

Also Published As

Publication number Publication date
US8581280B2 (en) 2013-11-12
CN101976718B (zh) 2014-06-11
CN101976718A (zh) 2011-02-16
CN101395725A (zh) 2009-03-25
EP1977457B1 (de) 2018-05-09
CN101395725B (zh) 2010-11-10
WO2007085218A1 (de) 2007-08-02
EP1977457A1 (de) 2008-10-08
TW200737553A (en) 2007-10-01
US20090315048A1 (en) 2009-12-24
DE102006015788A1 (de) 2007-09-13
JP2009524918A (ja) 2009-07-02
KR20080091249A (ko) 2008-10-09

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MM4A Annulment or lapse of patent due to non-payment of fees