CN101388400B - 电光装置及其制造方法以及电子设备 - Google Patents

电光装置及其制造方法以及电子设备 Download PDF

Info

Publication number
CN101388400B
CN101388400B CN2008102159182A CN200810215918A CN101388400B CN 101388400 B CN101388400 B CN 101388400B CN 2008102159182 A CN2008102159182 A CN 2008102159182A CN 200810215918 A CN200810215918 A CN 200810215918A CN 101388400 B CN101388400 B CN 101388400B
Authority
CN
China
Prior art keywords
region
pixel electrode
source
dielectric film
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008102159182A
Other languages
English (en)
Chinese (zh)
Other versions
CN101388400A (zh
Inventor
森胁稔
石井达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN101388400A publication Critical patent/CN101388400A/zh
Application granted granted Critical
Publication of CN101388400B publication Critical patent/CN101388400B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
CN2008102159182A 2007-09-10 2008-09-09 电光装置及其制造方法以及电子设备 Expired - Fee Related CN101388400B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP233694/2007 2007-09-10
JP2007233694A JP5003366B2 (ja) 2007-09-10 2007-09-10 電気光学装置及びその製造方法、並びに電子機器

Publications (2)

Publication Number Publication Date
CN101388400A CN101388400A (zh) 2009-03-18
CN101388400B true CN101388400B (zh) 2012-05-23

Family

ID=40430867

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008102159182A Expired - Fee Related CN101388400B (zh) 2007-09-10 2008-09-09 电光装置及其制造方法以及电子设备

Country Status (4)

Country Link
US (1) US7830465B2 (enExample)
JP (1) JP5003366B2 (enExample)
KR (1) KR20090026741A (enExample)
CN (1) CN101388400B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010032611A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5521495B2 (ja) * 2009-11-04 2014-06-11 セイコーエプソン株式会社 半導体装置用基板、半導体装置及び電子機器
JP2015206819A (ja) * 2014-04-17 2015-11-19 株式会社ジャパンディスプレイ 表示装置
JP6433169B2 (ja) * 2014-06-23 2018-12-05 株式会社ジャパンディスプレイ 薄膜半導体装置
CN104485338B (zh) * 2014-12-15 2017-06-20 京东方科技集团股份有限公司 阵列基板及制作方法、液晶显示面板和反射式液晶显示器
CN105161496A (zh) * 2015-07-30 2015-12-16 京东方科技集团股份有限公司 一种薄膜晶体管阵列基板及其制造方法、显示装置
JPWO2024084815A1 (enExample) * 2022-10-19 2024-04-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452241B1 (en) * 1999-10-15 2002-09-17 Nec Corporation Thin film transistor for use in liquid crystal display device and method for manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10233511A (ja) 1997-02-21 1998-09-02 Toshiba Corp 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法並びに液晶表示装置
US6590553B1 (en) * 1999-07-23 2003-07-08 Nec Corporation Liquid crystal display device and method for driving the same
JP3731447B2 (ja) 2000-06-15 2006-01-05 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP3870897B2 (ja) 2002-01-07 2007-01-24 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2004004722A (ja) * 2002-04-25 2004-01-08 Seiko Epson Corp 電気光学装置及び電子機器
JP2004053630A (ja) * 2002-07-16 2004-02-19 Sharp Corp 液晶表示装置及びその製造方法
JP4360151B2 (ja) * 2003-08-11 2009-11-11 セイコーエプソン株式会社 基板装置の製造方法
JP4645022B2 (ja) * 2003-11-27 2011-03-09 日本電気株式会社 薄膜トランジスタアレイ基板及びアクティブマトリクス型液晶表示装置
JP4400239B2 (ja) * 2004-02-16 2010-01-20 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3969439B2 (ja) * 2005-07-27 2007-09-05 セイコーエプソン株式会社 電気光学装置
JP4876548B2 (ja) 2005-11-22 2012-02-15 セイコーエプソン株式会社 電気光学装置の製造方法
JP4935404B2 (ja) * 2007-02-16 2012-05-23 セイコーエプソン株式会社 電気光学装置用基板及びその製造方法、並びに電気光学装置及び電子機器
JP5504557B2 (ja) * 2007-09-21 2014-05-28 セイコーエプソン株式会社 電気光学装置及び電気光学装置用実装ケース、並びに電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452241B1 (en) * 1999-10-15 2002-09-17 Nec Corporation Thin film transistor for use in liquid crystal display device and method for manufacturing the same

Also Published As

Publication number Publication date
US7830465B2 (en) 2010-11-09
JP2009063955A (ja) 2009-03-26
JP5003366B2 (ja) 2012-08-15
KR20090026741A (ko) 2009-03-13
CN101388400A (zh) 2009-03-18
US20090065783A1 (en) 2009-03-12

Similar Documents

Publication Publication Date Title
JP5245333B2 (ja) 電気光学装置及び電子機器
JP5532568B2 (ja) 電気光学装置及び電子機器
JP4197016B2 (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
JP5034529B2 (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
JP2009122250A (ja) 電気光学装置及び電子機器
CN101131519A (zh) 电光装置用基板、电光装置以及电子设备
CN101388400B (zh) 电光装置及其制造方法以及电子设备
JP5157319B2 (ja) 電気光学装置及び電子機器
JP4349406B2 (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
CN101246290B (zh) 电光装置用基板、其制造方法、电光装置及电子设备
JP5428141B2 (ja) 電気光学装置、及びこれを備えた電子機器
US8208108B2 (en) Electro-optic device and electronic apparatus
JP5176434B2 (ja) 電気光学装置及び電子機器
JP2009139417A (ja) 電気光学装置及びその製造方法並びに電子機器
JP5098682B2 (ja) 電気光学装置及びその製造方法、並びに電子機器
JP5292738B2 (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
JP2008040399A (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
JP2009053477A (ja) 電気光学装置及び電子機器
JP2010067879A (ja) 薄膜トランジスタ及び電気光学装置並びに電子機器
JP2009115883A (ja) 電気光学装置及び電子機器
JP4395807B2 (ja) 電気光学装置用基板及び電気光学装置、並びに電子機器
JP2011221119A (ja) 電気光学装置及び電子機器、並びに電気光学装置の製造方法
JP2009186877A (ja) 電気光学装置及びその製造方法、並びに電子機器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523

Termination date: 20150909

EXPY Termination of patent right or utility model