CN101383340A - 具有堆叠分立电感器结构的半导体功率器件 - Google Patents

具有堆叠分立电感器结构的半导体功率器件 Download PDF

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Publication number
CN101383340A
CN101383340A CNA2008101089708A CN200810108970A CN101383340A CN 101383340 A CN101383340 A CN 101383340A CN A2008101089708 A CNA2008101089708 A CN A2008101089708A CN 200810108970 A CN200810108970 A CN 200810108970A CN 101383340 A CN101383340 A CN 101383340A
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contact zone
discrete inductor
power device
semiconductor power
semiconductor
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CN101383340B (zh
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弗兰茨娃·赫尔伯特
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Chongqing Wanguo Semiconductor Technology Co ltd
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Alpha and Omega Semiconductor Inc
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Abstract

本发明涉及一种具有堆叠分立电感器结构的半导体功率器件，其包括分立电感器，该分立电感器具有形成在其第一表面上的接触区和安装在其第一表面上并且连接到该接触区的至少一个半导体元件。分立电感器还包括在与第一表面相对的第二表面上形成的接触区和将第一表面接触区连接到相应的第二表面接触区的定线连接线。所述半导体元件可以倒装到分立电感器接触区或导线键合到其上。

Description

具有堆叠分立电感器结构的半导体功率器件
技术领域
本发明总体涉及半导体功率器件，更具体地涉及具有堆叠分立电感器结构的半导体功率器件，其中至少一个半导体元件堆叠在分立电感器上并且电连接到该分立电感器的电极上。分立电感器上形成的定线连接向至少一个半导体元件提供额外的接触区。
背景技术
众所周知，在实现功率转换电路的时候，印刷电路板上将包括分立的电感器。例如，AnalogicTM TECH 1MHz 400mA降压转换器(AAT1143)需要使用分立电感器。以这种方式实现的功率转换器的缺点是元件成本高并且需要更多的印刷电路板空间。
与功率集成电路和其他元件共同封装的分立电感器也众所周知。例如，加利福尼亚州的米尔皮塔斯市的线性技术公司制造的
Figure A200810108970D00061
4600直流-直流功率转换器包括一个内置的15mm×15mm×2.8mm封装的电感器。该封装的缺点是使用昂贵的印刷电路板空间。
进一步已知一种将电感器设置在诸如功率集成电路芯片的集成电路芯片的顶部的结构。例如，新泽西州桥水市的Enpirion公司制造的功率转换器包括基于MEMS的电感器，该电感器具有夹在两个平板磁层之间的厚电镀铜螺旋线圈并且设置于集成直流-直流转换器上方。为了达到高电感，需要大芯片(有时称为功率集成电路芯片)支撑相对大的MEMS电感器衬底并且实现所需的电特性(高电感低电阻)。由于每单位面积基底的功率集成电路的成本比电感器的成本要高得多，因此上述技术导致较高的产品成本，也导致较大的总体封装尺寸。另外，为了制造平板磁层和具有适当电特性的总体电感器结构，复杂的工艺处理是必须的。
芯片规模的工艺技术已被用于将功率集成电路和电感器组合在一个单独封装内。电感器衬底形成包括优化平面螺旋电感器的芯片规模封装主体，如申请日为2007年3月27的题为“具有电感器衬底芯片尺寸功率转换器”(Chip Scale Power Converter Package Having an Inductor Substrate)的共同转让的美国专利申请系列号11/729,311中公开的内容。功率集成电路倒装在电感器衬底上以形成芯片规模的功率转换器。
当前在技术中仍需要实现经改进的成本特性的要求带有电感器的半导体功率器件。该半导体功率器件最好可用于任何需要电感器的应用场合。该半导体功率器件最好还可用于诸如降压，升压，降压—升压转换器和功率调节器的功率转换应用场合。该半导体功率器件最好还使用与诸如功率管理集成电路的半导体元件和诸如场效应晶体管和二极管的其他分立元件共同封装的现有的高性能分立功率电感器。该半导体功率器件最好具有高效的成本性能和小形状因子。
发明内容
本发明的目的在于提供一种具有堆叠分立电感器结构的半导体功率器件，其因为不需要分离的衬底和引线框，可以使总体装配及封装成本达到最小化。
为达上述目的，本发明提供一种具有堆叠分立电感器结构的半导体功率器件，该功率器件包括分立电感器，该分立电感器具有电连接于电感器电极并且围绕在分立电感器的外围周围的引线。该引线实现了半导体元件在分立电感器的顶表面上的堆叠和电连接。形成在该顶表面并且围绕在分立电感器的外围周围的接触区和定线连接线为堆叠的半导体元件提供额外的接触区。该半导体元件可以倒装到分立电感器引线以及接触区和定线连接线上或者导线键合到其上。
进一步，具有磁芯结构的线绕型低剖面小尺度分立电感器有在其上形成的图形化电极，用于确定来自通过倒装技术安装在分立电感器的表面的堆叠集成电路的电信号的传输路线。
进一步，具有磁芯结构的线绕型低剖面小尺度分立电感器有在其上形成的图形化电极，用于确定来自通过标准的芯片附贴技术和导线键合安装在分立电感器的表面的堆叠集成电路的电信号的传输路线。
进一步，多层螺旋型低剖面小尺度分立电感器有在其上形成的图形化电极，用于确定来自通过倒装技术安装在分立电感器的表面的堆叠集成电路的电信号的传输路线。该封装可以与已安装的集成电路一起倒装到印刷电路板或系统水平板上，与该印刷电路板或系统水平板相接触以得到更好的散热效果。
进一步，多层螺旋型低剖面小尺度分立电感器有在其上形成的图形化电极，用以确定来自用标准的芯片附贴技术和导线键合安装在分立电感器的表面的堆叠集成电路的电信号的传输路线。
进一步，多层螺旋型低剖面小尺度分立电感器有在其上形成的图形化电极，用以确定来自安装在分立电感器的表面的堆叠集成电路的电信号的传输路线。分立电感器电极通过穿过分立电感器主体部分延伸或全部延伸的互连通道而形成。
为了能够更好地理解下文对本发明的详细描述，以及为了更好地了解本发明对现有技术做出的创新，相当广泛地对本发明的较为重要的特征进行了概括。当然，本发明的其他特征将在下文进行描述并将成为本文附后的权利要求的主题内容。
有关该方面，在详细介绍本发明的至少一个实施例之前，应该理解，本发明不局限于下文的描述或附图的说明中对功能元件的细节和这些元件的配置的应用。本发明能够实现其他的实施例并且能够以各种方式实施。还有，应该理解，本文使用的措词和术语以及摘要的目的是为了描述本发明，而不能视为对本发明的限制。
这样，本技术领域熟练的技术人员应该了解，本发明根据的概念可被方便地用作实施本发明的几个目的的其他方法和系统的设计基础。因此，重要的是权利要求应该被视为包括不背离本发明的精神和范围的这样的等效结构。
附图说明
通过下文结合附图对本发明的具体实施例的描述，本发明的上述及其他方面及特征对于本技术领域熟练的技术人员将是显而易见的，其中：
图1是根据本发明的分立电感器的示意图；
图2是升压转换器的电路图；
图3是根据本发明实施升压转换器的堆叠分立电感器结构的示意性侧视图；
图4是根据本发明实施升压转换器的堆叠分立电感器结构的另一个实施例的示意性侧视图；
图5是根据本发明实施升压转换器的堆叠分立电感器结构的另一个实施例的示意性俯视图；
图6A是降压转换器的电路图；
图6B是根据本发明实施降压转换器的堆叠分立电感器结构的示意性俯视图；
图7是根据本发明实施降压转换器的堆叠分立电感器结构的另一个实施例的示意性侧视图；
图8是根据本发明实施降压转换器的堆叠分立电感器结构的另一个实施例的示意性侧视图；
图9是多层分立电感器的示意图；
图10是根据本发明应用多层分立电感器的堆叠电感器结构的示意性侧视图；
图11是图10的堆叠分立电感器结构的示意性俯视图；
图12是根据本发明应用多层分立电感器的堆叠分立电感器结构的另一个实施例的示意图；
图13是图12的堆叠分立电感器结构的示意性俯视图；
图14是图12的堆叠分立电感器结构的示意性仰视图；以及
图15是根据本发明应用多层分立电感器的堆叠分立电感器结构的另一个实施例的示意图。
具体实施方式
下文将结合附图详细说明本发明，附图是作为本发明的说明性实例而提供，从而使本技术领域熟练的技术人员能够实现本发明。需要注意的是，下文的附图和实例不能被理解为对本发明范围的限制。在本发明的某些要素能够使用已知的元件部分实现或全部实现的地方，仅对理解本发明必须的一部分这样的已知元件进行说明，为了不模糊本发明的重点，将省略对这样的已知元件的其他部分的详细描述。另外，本发明通过说明的方式包括对于本文涉及的元件的现在的和将来的已知等效内容。
具有本发明的堆叠分立电感器结构的半导体功率器件提供了一种器件，该器件通过将尽可能好的和尽可能小的电路结构与尽可能好的电感器结构相结合优化器件的整体性能。这样，本发明的器件实现了独特的和有效的结合。
本发明提供了一种具有堆叠分立电感器结构的半导体功率器件。图1显示了总体标为100的分立电感器，该电感器100包括鼓形磁芯110(由诸如铁氧体的磁性材料制成)和缠绕其上的导线线圈115(通常为低电阻铜线)。套筒磁芯120(由诸如铁氧体的磁性材料制成)围绕在鼓形磁芯110周围。代表性的低剖面电感器包括面积为3.0mm×3.2mm，高度为1.2mm的TokoDE2812C以及Taiyo NR3012T。
市场上可以获得的标准电感器一般仅具有在电感器的相对两侧配置的两个电极。为了在分立电感器100的电极和堆叠在分立电感器100的第一表面130上的半导体的触点之间提供接触区，电感器引线140和150围绕于分立电感器100的相对两侧(周边)周围。电感器引线140包括顶电极接触部分141，侧面定线连接线部分143，和在分立电感器结构100的第二表面195上的底电极接触部分145。电感器引线150包括顶电极接触部分151，侧面定线连接线部分153，和在第二表面195上的底电极接触部分155。根据堆叠在第一表面130上的半导体元件的特性和半导体元件堆叠的方式，引线140和150的顶电极接触部分141和151可以延伸以覆盖分立电感器100的第一表面130的比图1所示更大的部分。电感器引线140和150可以包括镍锡银合金，或者诸如镍金合金，铜和铝的其他导电材料。
接触区和定线连接线160和170形成在第一表面130上并且围绕在其外围周围，在与第一表面130相对的第二表面195处终止，为堆叠的半导体元件提供额外的接触区。根据堆叠在第一表面130上的半导体元件的特性和半导体元件堆叠的方式，在第一表面130上形成的额外接触区可以通过例如电极镀图形化为芯片区，导线键合区和球栅阵列接触区。接触区和定线连接线160和170是图形化电极的代表，本技术领域熟练的技术人员将了解，额外的接触区和定线连接线可以取决于堆叠在第一表面130上的半导体元件的特性设置。例如，可以设置金属连接线，以通过本文进一步描绘的通道将来自第一表面130的接触区连接到第二表面195上的接触区。接触区和定线连接线160和170可以包括镍锡银合金或者诸如镍金合金，铜和铝的其他导电材料。
本发明的独特的特征在于，来自堆叠集成电路和如果存在的额外元件的连接线必须到达将要放置堆叠电感器结构的安装面。为了实现这一点，接触区和定线连接线160和170可以围绕在分立电感器100的多个侧面的外围周围。
本发明的一个优选实施例包括如图3，图4和图5所示的升压转换器。图2所示为升压转换器的电路图，其包括电感器200，控制电路210，肖特基二极管220和外部电容器230。参考图3，在该优选实施例的第一方面，升压转换器300包括分立电感器100，该分立电感器100具有堆叠在分立电感器100的第一表面130上的控制电路210和肖特基二极管220。控制电路210连接到接触区和定线连接线170以提供接地连接。肖特基二极管220连接到接触区和定线连接线160以提供阴极输出。额外的接触区和定线连接线(未显示)提供输入到控制电路210的控制信号。肖特基二极管220，控制电路210，电感器引线140和150以及接触区和定线连接线之间的连接通过键合导线190形成。密封剂195(模塑复合物)将半导体元器件，键合导线190，顶电极接触部分141和151的各个部分以及接触和定线连接线的各个部分密封在一起。
参考图4，在该优选实施例的另一个方面，总体标为400的升压转换器包括分立电感器100，该分立电感器100具有倒装在分立电感器100的第一表面130上的控制电路210和肖特基二极管220。接触区和定线连接线160用于将肖特基二极管220互连到控制电路210，接触区和定线连接线170提供输入到控制电路210的控制信号。
参考图5，在该优选实施例的另一个方面，总体标为500的升压转换器包括分立电感器100，该分立电感器100具有安装于分立电感器100的上表面130上的控制电路210和肖特基二极管220。肖特基二极管220连接于接触区和定线连接线160以提供阴极输出。控制电路210连接于接触区和定线连接线170以提供接地连接。接触区和定线连接线180提供输入到控制电路210的控制信号。肖特基二极管220，控制电路210，电感器引线140和150以及接触区和定线连接线之间的连接通过键合导线190形成。
根据本发明的另一个优选实施例，参考图6A、6B、7和8，图中显示了具有堆叠分立电感器结构的用于需要少于1A的应用场合的5V降压转换器。通常面积为1×1.5mm2的功率集成电路600通过倒装法(图7)或导线键合(图6B和图8)堆叠在分立电感器100的第一表面130上。参考图6B，功率集成电路600安装到第一表面130上形成的接触区605。
在该应用中，功率集成电路600需要5个外部连接，包括IN610，PGND620，EN6 30，LX 640和AGND 650，这些外部连接被显示为分别连接于接触区和定线连接线660、670、680，引线140，和定线连接线690(图6B)。接触区605电连接于接触区和定线连接线690。
根据本发明的另一个优选实施例，半导体元件堆叠于分立表面安装型多层传感器的表面。多层电感器的实例是太阳诱电BK系列多层芯片电感器。如图9所示，多层电感器900包括具有埋设于铁氧体材料920中的导电层910(可以是银，铜，或其他图形化金属)的相对薄(小于400微米)的结构。两个端电极930和940提供与电感器900的接触区。端电极最好包括锡镍银合金，或者诸如镍金合金，铜和铝的其他导电材料。多层分立电感器结构的一个关键优点是可以比分立线绕电感器总体上做得更薄。性能上的权衡因素可以是电感器的串联电阻，但是该串联电阻可以通过最大化铁氧体材料920的各个层次上的图形化金属的厚度而达到最小。
参考图10和11，通过例如电极镀形成分立电感器900的第一表面1040上的图形化接触区，以提供与倒装在其上的半导体元件1000的接触区。为了实现这一目的，多个小焊料球1010形成与图形化接触区1050的电接触。一个或多个较大的焊料球1020(图10显示出2个)提供端电极930和940和印刷电路板1030之间的连接。其他较大的焊料球1060(图11)形成与其他图形化接触区1050的电接触以提供图形化接触区1050和印刷电路板1030之间的连接。图11所示的虚线部分表示在分立电感器900的表面1040上半导体元件1000的位置。如图10所示，半导体元件1000的一个表面可以暴露并且基本上和较大的焊料球1020和1060共平面，用于直接连接于印刷电路板1030。
根据本发明的还有一个优选实施例，参考图12、13、14和15，分立多层电感器1200包括埋设于铁氧体材料1220中的各个导体层1210。半导体元件1230倒装到分立电感器1200的第一表面1240上。与印刷电路板1250的连接由互连通道1300和1330或者其他定线连接线形成。可以应用模塑材料(未显示)封装半导体元件1230和第一表面1240上形成的接触区以对其进行保护。
分立多层电感器1200的层状结构有利地提供了能够用诸如通道1300和1330的互连通道将一个层次1210连接到其他层次1210的连接方式。通孔通道1300连接三个层次1210并且从电感器1200的第一表面1240延伸至其第二表面1245。如图中层次1210a所示，各个层次1210也可以在电感器1200内确定路线以提供与电感器1200上安装的半导体元件的终端的连接。
特别参考图13，分立电感器1200的第一表面1240上形成的图形化接触区1310提供与倒装于其上的半导体元件1230的接触区。为了此目的，多个小焊料球1320形成与图形化接触区1310的接触。图14显示的是分立电感器1200的第二表面1400上暴露的通道1300的示意图。
根据本发明的另一个方面，参考图15，半导体元件1230通过键合导线1500导线键合到图形化接触区1510。
应该注意到，多层分立电感器结构可以用不同的方式配置，为所描述的堆叠应用场合实现最优配置。例如，为了最小化半导体功率器件封装的总体厚度，多层分立电感器900，1200可以使用较少的层次。有效的最终产品的整体厚度可以达到0.9mm或更小。可以通过应用使用0.1-0.2mm的焊料球在厚度0.3-0.5mm的多层电感器900上倒装的0.15-0.2mm的功率集成电路达到以上效果。
根据本发明的半导体功率器件通过取消对额外衬底或引线框的需求减少了生产成本。通过使用标准的高性能和最优化的分立电感器，本发明的器件达到最优的电感性能。由于半导体芯片可以做小，因此可以使所使用的半导体元件的成本减到最小。另外，本发明的半导体功率器件不需要新的工艺技术并且使用已有的标准的组装技术。
根据本发明的半导体功率器件使所使用的材料减少并且提供通过最小化装配和封装成本达到的更低的整体成本。在一些优选实施例中，半导体功率器件也使电感器不受到扰动以最优化电感器的性能。最后，该半导体功率器件最好地提供了在诸如5V降压转换器的少于1A的便携式应用设备中的具有4×4mm2占地面积的器件。
很明显，上述实施例可以进行许多方式的修改而不背离本发明的范围。例如，除了所描述的升压转换器和降压转换器以外，本技术领域熟练的技术人员应该意识到，使用本发明的结构还可以实现其他的电路，包括具有集成在功率集成电路中或者在功率集成电路外共同封装的NMOS高压侧和肖特基二极管低压侧元件的非同步降压转换器，具有集成在功率集成电路中或者在功率集成电路外共同封装的NMOS低压侧和PMOS高压侧元件的同步降压转换器，具有集成在功率集成电路中或者在功率集成电路外共同封装的NMOS低压侧和NMOS高压侧元件的同步降压转换器，降压—升压转换器以及任何需要从几百毫微亨到几微亨的相对高电感和0.05到0.3欧姆范围的低电阻的电感器的电路。进一步，特定实施例的各个方面可以包含与同一实施例的其他方面无关的可以申请专利的主体内容。更进一步，不同实施例的各个方面可以结合在一起。因此，本发明的范围应该由附后的权利要求及其法定等效内容确定。

Claims (37)

1.一种半导体功率器件，其特征在于，该半导体功率器件包括：
具有在其第一表面上形成的接触区的分立电感器；和
安装在分立电感器的第一表面上并且连接于所述接触区的至少一个半导体元件。
2.如权利要求1所述的半导体功率器件，其特征在于，所述的分立电感器还包括与第一表面相对的第二表面上形成的接触区，和将第一表面接触区连接到相应的第二表面接触区的定线连接线。
3.如权利要求2所述的半导体功率器件，其特征在于，所述的定线连接线形成在分立电感器的表面上并且围绕于分立电感器的外围周围。
4.如权利要求2所述的半导体功率器件，其特征在于，所述的定线连接线包括通孔通道。
5.如权利要求2所述的半导体功率器件，其特征在于，所述的接触区和定线连接线包括锡银镍合金。
6.如权利要求1所述的半导体功率器件，其特征在于，该器件是升压功率转换器，并且至少一个半导体元件包括肖特基二极管和控制电路。
7.如权利要求6所述的半导体功率器件，其特征在于，所述的肖特基二极管和控制电路倒装到接触区上。
8.如权利要求6所述的半导体功率器件，其特征在于，其中肖特基二极管和控制电路导线键合到接触区上。
9.如权利要求1所述的半导体功率器件，其特征在于，该器件是降压功率转换器，并且至少一个半导体元件包括功率集成电路。
10.如权利要求9所述的半导体功率器件，其特征在于，所述的功率集成电路倒装到接触区上。
11.如权利要求9所述的半导体功率器件，其特征在于，所述的功率集成电路导线键合到接触区上。
12.如权利要求1所述的半导体功率器件，其特征在于，所述的分立电感器包括表面安装线绕分立电感器。
13.如权利要求1所述的半导体功率器件，其特征在于，所述的分立电感器包括多层分立电感器。
14.如权利要求1所述的半导体功率器件，其特征在于，该半导体功率器件还包括覆盖至少一个半导体元件和第一表面接触区的密封剂。
15.如权利要求1所述的半导体功率器件，其特征在于，该半导体功率器件还包括在分立电感器的第一表面上形成的将第一接触区连接到第一表面上的第二接触区的图形化接触区。
16.如权利要求15所述的半导体功率器件，其特征在于，该半导体功率器件还包括将第一接触区连接到半导体元件的小焊料球，和连接于第二接触区的大焊料球，该大焊料球基本上与半导体元件的表面共平面。
17.如权利要求16所述的半导体功率器件，其特征在于，所述的与大焊料球共平面的表面暴露并且安装到印刷电路板上。
18.如权利要求15所述的半导体功率器件，其特征在于，所述的分立电感器还包括在与第一表面相对的第二表面上形成的接触区，以及定线连接线将第一表面接触区连接到相应的第二表面接触区。
19.如权利要求18所述的半导体功率器件，其特征在于，所述的定线连接线形成在分立电感器的表面上并且围绕在分立电感器的外围周围。
20 如权利要求18所述的半导体功率器件，其特征在于，所述的定线连接线包括通孔通道。
21.如权利要求18所述的半导体功率器件，其特征在于，该器件是升压功率转换器，并且至少一个半导体元件包括肖特基二极管和控制电路。
22.如权利要求21所述的半导体功率器件，其特征在于，所述的肖特基二极管和控制电路倒装到接触区上。
23.如权利要求21所述的半导体功率器件，其特征在于，所述的肖特基二极管和控制电路导线键合到接触区上。
24.如权利要求18所述的半导体功率器件，其特征在于，该器件是降压功率转换器，并且至少一个半导体元件包括功率集成电路。
25.如权利要求24所述的半导体功率器件，其特征在于，所述的功率集成电路倒装到接触区上。
26.如权利要求24所述的半导体功率器件，其特征在于，所述的功率集成电路导线键合到接触区上。
27.如权利要求15所述的半导体功率器件，其特征在于，所述的分立电感器包括表面安装线绕分立电感器。
28.如权利要求15所述的半导体功率器件，其特征在于，所述的分立电感器包括多层分立电感器。
29.如权利要求15所述的半导体功率器件，其特征在于，该半导体功率器件还包括覆盖至少一个半导体元件和第一表面接触区的密封剂。
30.一种分立电感器，其特征在于，该分立电感器包括：分立电感器的第一表面上形成的接触区，该接触区包括用于通过键合导线电连接于至少一个半导体集成电路的引线框。
31.如权利要求30所述的分立电感器，其特征在于，所述的分立电感器还包括与第一表面相对的第二表面上形成的接触区，和将第一表面接触区连接到相应的第二表面接触区的定线连接线。
32.如权利要求31所述的分立电感器，其特征在于，所述的定线连接线形成在分立电感器的表面上并且围绕于分立电感器的外围周围。
33.如权利要求31所述的分立电感器，其特征在于，所述的定线连接线包括通孔通道。
34.一种分立电感器，其特征在于，该分立电感器包括：在分立电感器的第一表面上形成的接触区，该接触区包括用于倒装连接于至少一个半导体集成电路的球栅阵列。
35.如权利要求34所述的分立电感器，其特征在于，所述的分立电感器还包括与第一表面相对的第二表面上形成的接触区，和将第一表面接触区连接到相应的第二表面接触区的定线连接线。
36.如权利要求35所述的分立电感器，其特征在于，所述的定线连接线形成在分立电感器的表面上并且围绕于分立电感器的外围周围。
37.如权利要求35所述的分立电感器，其特征在于，所述的定线连接线包括通孔通道。
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