CN101379607B - 静电卡盘 - Google Patents
静电卡盘 Download PDFInfo
- Publication number
- CN101379607B CN101379607B CN2007800045852A CN200780004585A CN101379607B CN 101379607 B CN101379607 B CN 101379607B CN 2007800045852 A CN2007800045852 A CN 2007800045852A CN 200780004585 A CN200780004585 A CN 200780004585A CN 101379607 B CN101379607 B CN 101379607B
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- titanium oxide
- volume resistivity
- sup
- dielectric body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/85—Intergranular or grain boundary phases
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Jigs For Machine Tools (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP031545/2006 | 2006-02-08 | ||
| JP2006031545A JP4244229B2 (ja) | 2006-02-08 | 2006-02-08 | 静電チャック |
| PCT/JP2007/052175 WO2007091619A1 (ja) | 2006-02-08 | 2007-02-08 | 静電チャック |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101379607A CN101379607A (zh) | 2009-03-04 |
| CN101379607B true CN101379607B (zh) | 2010-04-21 |
Family
ID=38345213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800045852A Active CN101379607B (zh) | 2006-02-08 | 2007-02-08 | 静电卡盘 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4244229B2 (enExample) |
| KR (1) | KR100989230B1 (enExample) |
| CN (1) | CN101379607B (enExample) |
| TW (1) | TWI342059B (enExample) |
| WO (1) | WO2007091619A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009004752A (ja) * | 2007-05-18 | 2009-01-08 | Toto Ltd | 静電チャック |
| JP4786693B2 (ja) | 2008-09-30 | 2011-10-05 | 三菱重工業株式会社 | ウェハ接合装置およびウェハ接合方法 |
| JP5872998B2 (ja) | 2012-04-26 | 2016-03-01 | 日本特殊陶業株式会社 | アルミナ焼結体、それを備える部材、および半導体製造装置 |
| KR102119867B1 (ko) * | 2013-10-21 | 2020-06-09 | 주식회사 미코세라믹스 | 정전척 |
| CN107663080B (zh) * | 2016-07-27 | 2020-05-08 | 北京华卓精科科技股份有限公司 | 应用于j-r型静电卡盘的氧化铝陶瓷及其制备方法 |
| JP2022142151A (ja) * | 2021-03-16 | 2022-09-30 | 株式会社巴川製紙所 | セラミック膜およびその製造方法、静電チャック装置およびその製造方法 |
| JP2022142421A (ja) * | 2021-03-16 | 2022-09-30 | 株式会社巴川製紙所 | 静電チャック装置およびその製造方法 |
| US20240409468A1 (en) * | 2021-10-18 | 2024-12-12 | Niterra Co., Ltd. | Alumina-based sintered body and electrostatic chuck |
| JP7777008B2 (ja) * | 2022-03-03 | 2025-11-27 | 株式会社巴川コーポレーション | 静電チャック装置 |
| JP2023128113A (ja) * | 2022-03-03 | 2023-09-14 | 株式会社巴川製紙所 | 静電チャック装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (zh) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | 陶瓷静电卡盘组件及其制备方法 |
| CN1638084A (zh) * | 2003-11-14 | 2005-07-13 | 爱德牌工程有限公司 | 静电卡盘、基片支持、夹具和电极结构及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03204924A (ja) * | 1989-10-30 | 1991-09-06 | Sumitomo Metal Ind Ltd | 試料保持装置 |
| JPH09330974A (ja) * | 1996-06-12 | 1997-12-22 | Hitachi Ltd | 静電吸着電極 |
| JP4201502B2 (ja) * | 2000-10-11 | 2008-12-24 | 独立行政法人産業技術総合研究所 | 静電チャックおよびその製造方法 |
| JP2004352572A (ja) * | 2003-05-29 | 2004-12-16 | Kyocera Corp | アルミナセラミックス及びその製造方法 |
| JP4722463B2 (ja) * | 2004-12-03 | 2011-07-13 | 黒崎播磨株式会社 | 静電チャック用誘電体セラミックス及びその製造方法 |
-
2006
- 2006-02-08 JP JP2006031545A patent/JP4244229B2/ja active Active
-
2007
- 2007-02-08 KR KR1020087018298A patent/KR100989230B1/ko active Active
- 2007-02-08 TW TW096104666A patent/TWI342059B/zh active
- 2007-02-08 WO PCT/JP2007/052175 patent/WO2007091619A1/ja not_active Ceased
- 2007-02-08 CN CN2007800045852A patent/CN101379607B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529908A (zh) * | 2001-06-28 | 2004-09-15 | ��ķ�о�����˾ | 陶瓷静电卡盘组件及其制备方法 |
| CN1638084A (zh) * | 2003-11-14 | 2005-07-13 | 爱德牌工程有限公司 | 静电卡盘、基片支持、夹具和电极结构及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI342059B (en) | 2011-05-11 |
| JP2007214287A (ja) | 2007-08-23 |
| WO2007091619A1 (ja) | 2007-08-16 |
| KR20080089444A (ko) | 2008-10-06 |
| JP4244229B2 (ja) | 2009-03-25 |
| TW200737398A (en) | 2007-10-01 |
| CN101379607A (zh) | 2009-03-04 |
| KR100989230B1 (ko) | 2010-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101379607B (zh) | 静电卡盘 | |
| US7450365B2 (en) | Electrostatic chuck | |
| US6641939B1 (en) | Transition metal oxide doped alumina and methods of making and using | |
| JP6901642B1 (ja) | 静電チャック及びその製造方法 | |
| JP6052976B2 (ja) | 静電チャック誘電体層および静電チャック | |
| US20090311162A1 (en) | Aluminum nitride sintered body and manufacturing method thereof | |
| CN116813352A (zh) | 氮化铝陶瓷材料及其制备方法和应用 | |
| KR20140138614A (ko) | 스퍼터링 타깃 및 고저항 투명막 그리고 그 제조 방법 | |
| US20100227145A1 (en) | Aluminum oxide sintered body, method for producing the same and member for semiconductor producing apparatus | |
| JP4623159B2 (ja) | 静電チャック | |
| JP2006049356A (ja) | 静電チャック | |
| US20090284893A1 (en) | Electrostatic chuck | |
| JPH09283607A (ja) | 静電チャック | |
| JP4939379B2 (ja) | 静電チャック用窒化アルミニウム焼結体 | |
| KR20240016167A (ko) | 반도체 제조 장비용 대전방지 세라믹 부품 제조 방법 | |
| JP2008288428A (ja) | 静電チャック | |
| KR20100088479A (ko) | 질화알루미늄 소재 및 그 제조방법 | |
| US7907383B2 (en) | Electrostatic chuck | |
| TWI239039B (en) | Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed | |
| JP4533994B2 (ja) | プラズマ耐食材料、その製造方法及びその部材 | |
| WO2007055006A1 (ja) | 静電チャック | |
| JP4585129B2 (ja) | 静電チャック | |
| JP2009004752A (ja) | 静電チャック | |
| JP2000247728A (ja) | 耐食性に優れたアルミナセラミックス焼結体 | |
| KR20140141045A (ko) | 산화이트륨과 질화붕소를 이용한 반도체 cvd 공정용 제품의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |