CN101378015A - Iii族氮化物半导体和其制造方法 - Google Patents
Iii族氮化物半导体和其制造方法 Download PDFInfo
- Publication number
- CN101378015A CN101378015A CNA2008102149034A CN200810214903A CN101378015A CN 101378015 A CN101378015 A CN 101378015A CN A2008102149034 A CNA2008102149034 A CN A2008102149034A CN 200810214903 A CN200810214903 A CN 200810214903A CN 101378015 A CN101378015 A CN 101378015A
- Authority
- CN
- China
- Prior art keywords
- layer
- aln
- iii
- substrate
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007221774 | 2007-08-28 | ||
JP2007221774A JP5060875B2 (ja) | 2007-08-28 | 2007-08-28 | Iii族窒化物半導体とその製造方法 |
JP2007-221774 | 2007-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101378015A true CN101378015A (zh) | 2009-03-04 |
CN101378015B CN101378015B (zh) | 2012-03-28 |
Family
ID=39938135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102149034A Expired - Fee Related CN101378015B (zh) | 2007-08-28 | 2008-08-28 | Ⅲ族氮化物半导体和其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8216869B2 (zh) |
EP (1) | EP2031642A3 (zh) |
JP (1) | JP5060875B2 (zh) |
KR (1) | KR20090023198A (zh) |
CN (1) | CN101378015B (zh) |
TW (1) | TWI462154B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610705A (zh) * | 2011-01-24 | 2012-07-25 | 鸿富锦精密工业(深圳)有限公司 | 氮化镓基板的制作方法 |
CN102714145A (zh) * | 2009-03-27 | 2012-10-03 | 同和控股(集团)有限公司 | 第iii族氮化物半导体生长基板、第iii族氮化物半导体外延基板、第iii族氮化物半导体元件和第iii族氮化物半导体自立基板、及它们的制造方法 |
CN103515493A (zh) * | 2012-06-19 | 2014-01-15 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
CN105529248A (zh) * | 2010-09-30 | 2016-04-27 | 同和电子科技有限公司 | Iii族氮化物半导体元件制造用基板的制造方法、iii族氮化物半导体自支撑基板或iii族氮化物半导体元件的制造方法、以及iii族氮化物生长用基板 |
CN116314508A (zh) * | 2023-05-22 | 2023-06-23 | 江西兆驰半导体有限公司 | 一种高光效led外延片及其制备方法、led芯片 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100893360B1 (ko) * | 2008-05-02 | 2009-04-15 | (주)그랜드 텍 | 질화갈륨 단결정의 성장을 위한 버퍼층의 형성방법 |
US8736025B2 (en) | 2008-12-26 | 2014-05-27 | Dowa Electroncs Materials Co., Ltd. | III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity |
JP5684551B2 (ja) * | 2008-12-26 | 2015-03-11 | Dowaホールディングス株式会社 | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
JP2010278470A (ja) * | 2009-03-27 | 2010-12-09 | Dowa Holdings Co Ltd | Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法 |
TW201140880A (en) * | 2009-12-24 | 2011-11-16 | Dowa Electronics Materials Co Ltd | Vertical group iii nitride semiconductor light-emitting element and production method therefor |
JP2012015303A (ja) * | 2010-06-30 | 2012-01-19 | Sumitomo Electric Ind Ltd | 半導体基板および半導体装置 |
KR20140007348A (ko) | 2010-12-28 | 2014-01-17 | 도와 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3809464B2 (ja) * | 1999-12-14 | 2006-08-16 | 独立行政法人理化学研究所 | 半導体層の形成方法 |
JP3841146B2 (ja) * | 2000-06-23 | 2006-11-01 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子の製造方法 |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP2005005378A (ja) * | 2003-06-10 | 2005-01-06 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶およびその製造方法 |
JP2005343704A (ja) * | 2004-05-31 | 2005-12-15 | Sumitomo Electric Ind Ltd | AlxGayIn1−x−yN結晶の製造方法 |
ATE519232T1 (de) | 2005-04-04 | 2011-08-15 | Tohoku Techno Arch Co Ltd | Verfahren zur herstellung eines elements auf gan- basis |
JP4554469B2 (ja) * | 2005-08-18 | 2010-09-29 | 日本碍子株式会社 | Iii族窒化物結晶の形成方法、積層体、およびエピタキシャル基板 |
KR101060289B1 (ko) * | 2005-08-25 | 2011-08-29 | 가부시키가이샤 토호쿠 테크노 아치 | 반도체 기판의 제조 방법 |
JP4462249B2 (ja) * | 2005-09-22 | 2010-05-12 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
US7897490B2 (en) * | 2005-12-12 | 2011-03-01 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
WO2007072984A1 (ja) * | 2005-12-20 | 2007-06-28 | Tohoku Techno Arch Co., Ltd. | 半導体基板の製造方法及び素子構造の製造方法 |
US8013320B2 (en) * | 2006-03-03 | 2011-09-06 | Panasonic Corporation | Nitride semiconductor device and method for fabricating the same |
-
2007
- 2007-08-28 JP JP2007221774A patent/JP5060875B2/ja active Active
-
2008
- 2008-08-25 TW TW097132368A patent/TWI462154B/zh not_active IP Right Cessation
- 2008-08-26 EP EP08015074.1A patent/EP2031642A3/en not_active Withdrawn
- 2008-08-27 KR KR1020080084140A patent/KR20090023198A/ko not_active Application Discontinuation
- 2008-08-27 US US12/230,284 patent/US8216869B2/en active Active
- 2008-08-28 CN CN2008102149034A patent/CN101378015B/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102714145A (zh) * | 2009-03-27 | 2012-10-03 | 同和控股(集团)有限公司 | 第iii族氮化物半导体生长基板、第iii族氮化物半导体外延基板、第iii族氮化物半导体元件和第iii族氮化物半导体自立基板、及它们的制造方法 |
US8878189B2 (en) | 2009-03-27 | 2014-11-04 | Dowa Holdings Co., Ltd. | Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same |
CN102714145B (zh) * | 2009-03-27 | 2015-07-08 | 同和控股(集团)有限公司 | 第iii族氮化物半导体生长基板、外延基板、元件、自立基板及其制造方法 |
CN105529248A (zh) * | 2010-09-30 | 2016-04-27 | 同和电子科技有限公司 | Iii族氮化物半导体元件制造用基板的制造方法、iii族氮化物半导体自支撑基板或iii族氮化物半导体元件的制造方法、以及iii族氮化物生长用基板 |
CN105529248B (zh) * | 2010-09-30 | 2018-04-06 | 同和电子科技有限公司 | Iii族氮化物半导体元件制造用基板的制造方法、iii族氮化物半导体自支撑基板或iii族氮化物半导体元件的制造方法、以及iii族氮化物生长用基板 |
CN102610705A (zh) * | 2011-01-24 | 2012-07-25 | 鸿富锦精密工业(深圳)有限公司 | 氮化镓基板的制作方法 |
CN103515493A (zh) * | 2012-06-19 | 2014-01-15 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
CN103515493B (zh) * | 2012-06-19 | 2016-06-08 | 隆达电子股份有限公司 | 垂直式固态发光元件的制作工艺 |
CN116314508A (zh) * | 2023-05-22 | 2023-06-23 | 江西兆驰半导体有限公司 | 一种高光效led外延片及其制备方法、led芯片 |
Also Published As
Publication number | Publication date |
---|---|
JP5060875B2 (ja) | 2012-10-31 |
TWI462154B (zh) | 2014-11-21 |
JP2009054888A (ja) | 2009-03-12 |
US8216869B2 (en) | 2012-07-10 |
KR20090023198A (ko) | 2009-03-04 |
CN101378015B (zh) | 2012-03-28 |
TW200933705A (en) | 2009-08-01 |
US20090057835A1 (en) | 2009-03-05 |
EP2031642A2 (en) | 2009-03-04 |
EP2031642A3 (en) | 2014-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101378015B (zh) | Ⅲ族氮化物半导体和其制造方法 | |
JP5079361B2 (ja) | AlGaN結晶層の形成方法 | |
JP4783288B2 (ja) | 犠牲層上のヘテロエピタキシによるiii族窒化物の自立基板の実現方法 | |
CN101180420B (zh) | GaN单晶生长方法、GaN基板制备方法、GaN系元件制备方法以及GaN系元件 | |
JP6349298B2 (ja) | Iii−n単結晶製造方法およびiii−n単結晶 | |
JP6739452B2 (ja) | Ibadテクスチャ加工基板上のエピタキシャル六方晶材料 | |
CN106206258A (zh) | 在硅衬底上形成GaN层的方法以及GaN衬底 | |
JP2010056555A (ja) | 半導体構造物及びそれを製造する方法 | |
Uesugi et al. | Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing | |
JP2002249400A (ja) | 化合物半導体単結晶の製造方法およびその利用 | |
JP2004111848A (ja) | サファイア基板とそれを用いたエピタキシャル基板およびその製造方法 | |
JP2003073197A (ja) | 半導体結晶の製造方法 | |
US7696533B2 (en) | Indium nitride layer production | |
JP2003332234A (ja) | 窒化層を有するサファイア基板およびその製造方法 | |
WO2014141959A1 (ja) | 窒化ガリウム(GaN)自立基板の製造方法及び製造装置 | |
US20100264424A1 (en) | GaN LAYER CONTAINING MULTILAYER SUBSTRATE, PROCESS FOR PRODUCING SAME, AND DEVICE | |
JP5080429B2 (ja) | 窒化物半導体多層構造体及びその製造方法 | |
JP4236122B2 (ja) | 半導体基板の製造方法 | |
JP2002053398A (ja) | 結晶基板 | |
JP3482781B2 (ja) | 窒化物化合物半導体層の形成方法 | |
JP2006185962A (ja) | 半導体成長用基板および半導体膜の製造方法 | |
JP4507810B2 (ja) | 窒化物半導体基板の製造方法及び窒化物半導体基板 | |
TW445657B (en) | GaN system compound semiconductor and method for growing crystal thereof | |
JP2010132550A (ja) | 窒化物半導体基板の製造方法及び窒化物半導体基板 | |
JPH07321374A (ja) | 化合物半導体薄膜の成長方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: DOWA ELECTRONICS MATERIALS CO. Owner name: DOWA ELECTRONICS MATERIALS CO. Free format text: FORMER OWNER: TOHOKU TECHNO ARCH CO., LTD. Effective date: 20100903 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: SENDAI CITY, MIYAGI, JAPAN TO: TOKYO TO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100903 Address after: Tokyo, Japan Applicant after: DOWA ELECTRONICS MATERIALS Co.,Ltd. Address before: Sendai City, Miyagi Prefecture, Japan Applicant before: Tohoku Technology Messenger Co.,Ltd. Co-applicant before: DOWA ELECTRONICS MATERIALS Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120328 |
|
CF01 | Termination of patent right due to non-payment of annual fee |