JP6739452B2 - Ibadテクスチャ加工基板上のエピタキシャル六方晶材料 - Google Patents
Ibadテクスチャ加工基板上のエピタキシャル六方晶材料 Download PDFInfo
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- 238000007735 ion beam assisted deposition Methods 0.000 title claims description 118
- 239000000758 substrate Substances 0.000 title claims description 88
- 239000000463 material Substances 0.000 title claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 239000013078 crystal Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 229910017315 Mo—Cu Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 118
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 118
- 239000010408 film Substances 0.000 description 53
- 238000000034 method Methods 0.000 description 30
- 238000000151 deposition Methods 0.000 description 22
- 239000011888 foil Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 17
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000010884 ion-beam technique Methods 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000005401 electroluminescence Methods 0.000 description 7
- 238000005424 photoluminescence Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000004581 coalescence Methods 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- 238000000224 chemical solution deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000010436 fluorite Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000013341 scale-up Methods 0.000 description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical group O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 229910000663 tzm Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
本出願は、2015年2月10日に提出された「IBAD−Textured Substrates for Growth of Epitaxial Group−III Nitride Materials and Method of Making the Same」と題する米国仮特許出願第62/114,504号明細書、および2015年12月3日に提出された「IBAD−Textured Substrates for Growth of Epitaxial Group−III Nitride Materials and Method of Making the Same」と題する米国仮特許出願第62/262,815号明細書に対する優先権を主張し、かつこれらの利益を主張するものであり、これらの出願の明細書およびクレームは、本参照により本明細書に含まれる。
米国政府は、本発明における一括払いライセンスを保有し、かつ限定的状況において、特許権者に対し、米国エネルギー高等研究計画局が裁定する援助協定第AR0000447号の条項により規定される妥当な条件に基づいて他者にライセンスを与えることを求める権利を有する。
以下の論考では、幾つかの刊行物および引例を参照する場合があることに留意されたい。本明細書におけるこうした刊行物に関する論考は、背景としての科学的原則をより完全に説明するためのものであって、このような刊行物が特許性を判定するための先行技術であることを認めるものとして解釈されるべきではない。
IBAD層材料は、好ましくは、(111)配向に、上の六方晶材料の配列のための3回対称(3−fold symmetry)を与える、蛍石またはビックスバイト構造材料等の立方構造を含む。
GaNおよび関連のIII族窒化物材料のエピタキシャル成長のためのIBADテンプレートの適用可能性を実証するために、MOVPE(金属有機気相エピタキシ)としても知られるGaNのMOCVD成長を実行した。試料は、成長させる前に、H2フロー中で短時間加熱し、800−1000℃にした。530℃の基板温度においてH2およびN2プッシュフローを使用し、トリメチルガリウム(TMGa)およびアンモニア(NH3)を使用してGaN核形成層を成長させた。GaN NLの成長後、TMGaをオフにし、ウェハを1050℃までの温度で8分間ランプした。1050℃でTMGaを1時間オンにし、2μm以下のGaN膜を得た。成長の後、ウェハをNH3、H2およびN2フロー内で冷却し、成長反応器から取り出した。
IBADテンプレート上に、厚いGaN層を蒸着させた。典型的には、GaNの厚さは4−6マイクロメートルであり、図25から分かるように、その上部はSiでnドープされている。図26に示されているように、GaN層上には、LED構造pn接合が、InGaN層およびGaN層の5層が交互する多層である多重量子井戸(MQW)構造と共に成長される。MQW上には、pドープされた電子ブロッキング層が存在し、Mgでドープされたp−GaNがこれに続く。このようなヘテロ構造は、業界でLEDを製造するための標準である。
Claims (21)
- 多層構造体であって、
エピタキシャル六方晶層と、
<111>面外配向を有しかつ半値全幅(FWHM)が約12°以下である面内結晶テクスチャを有する立方材料の層と、
非単結晶基板と、を備える多層構造体。 - 前記エピタキシャル六方晶層は、III族窒化物半導体を含む、請求項1に記載の構造体。
- 前記エピタキシャル六方晶層は、GaNを含む、請求項2に記載の構造体。
- 前記エピタキシャル六方晶層は、発光ダイオード(LED)用のテンプレート層を提供する、請求項1に記載の構造体。
- 前記立方材料の層は、イオンビーム支援蒸着(IBAD)によってテクスチャ加工されている、請求項1に記載の構造体。
- 前記非単結晶基板の性質は、非晶質、多結晶、フレキシブル、延性、金属、セラミック、ガラス、プラスチックおよびポリマーより成るグループから選択される、請求項1に記載の構造体。
- 前記エピタキシャル六方晶層は、有機金属化学気相成長(MOCVD)、反応性スパッタリング、反応性蒸着または分子線エピタキシ(MBE)を用いて成長された、請求項1に記載の構造体。
- 前記非単結晶基板および前記エピタキシャル六方晶層の熱膨張係数は、約12%以内である、請求項1に記載の構造体。
- 前記非単結晶基板および前記エピタキシャル六方晶層の熱膨張係数は、約5%以内である、請求項8に記載の構造体。
- 前記エピタキシャル六方晶層は、GaNを含み、かつ前記非単結晶基板は、モリブデン、タングステン、タンタル、これらの合金、Mo−CuまたはTZMを含む、請求項1に記載の構造体。
- 前記立方材料の層は、約8°以下のFWHMを有する面内結晶テクスチャを有する、請求項1に記載の構造体。
- 前記立方材料の層は、約5°以下のFWHMを有する面内結晶テクスチャを有する、請求項11に記載の構造体。
- 前記立方材料の層は、MgO、CeO2、ビックスバイト構造、Sc2O3、Y2O3、Al2O3、蛍石構造、TiN、岩塩構造、CaF2、立方ZrO2、HfO2、ScOxまたはMn2O3より成るグループから選択される、請求項1に記載の構造体。
- 前記非単結晶基板と前記立方材料の層との間に配置される基層を含む、請求項1に記載の構造体。
- 前記基層は、非晶質Al2O3、Y2O3、またはSiO2を含む、請求項14に記載の構造体。
- 前記立方材料の層と前記エピタキシャル六方晶層との間に配置される1つまたは複数のエピタキシャルバッファ層を含む、請求項1に記載の構造体。
- 前記エピタキシャルバッファ層は、各々、前記立方材料の格子パラメータから前記エピタキシャル六方晶層の格子パラメータへの遷移を連続的に提供する格子パラメータを有する、請求項16に記載の構造体。
- 前記エピタキシャル六方晶層は、GaNを含み、かつ前記エピタキシャルバッファ層は、Sc2O3の層と、Zrの層と、AlNの層とを含む、請求項17に記載の構造体。
- 前記立方材料の層の前記面内結晶テクスチャの前記FWHMは、前記エピタキシャル六方晶層の面内結晶テクスチャのFWHMより大きい、請求項1に記載の構造体。
- 請求項1に記載の前記多層構造体を含む電子または光電子デバイス。
- LED、MOSFET、MESFET、HEMT、ヘテロ接合FET、ヘテロ接合バイポーラトランジスタ(HBT)、薄膜トランジスタ、センサ、メモリスタ、レーザダイオード(LD)、SAWデバイス、スピントロニクスデバイス、光検出器および光起電力(PV)ダイオードより成るグループから選択される、請求項20に記載のデバイス。
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