JPWO2023058308A1 - - Google Patents

Info

Publication number
JPWO2023058308A1
JPWO2023058308A1 JP2023552709A JP2023552709A JPWO2023058308A1 JP WO2023058308 A1 JPWO2023058308 A1 JP WO2023058308A1 JP 2023552709 A JP2023552709 A JP 2023552709A JP 2023552709 A JP2023552709 A JP 2023552709A JP WO2023058308 A1 JPWO2023058308 A1 JP WO2023058308A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023552709A
Other versions
JPWO2023058308A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023058308A1 publication Critical patent/JPWO2023058308A1/ja
Publication of JPWO2023058308A5 publication Critical patent/JPWO2023058308A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Led Devices (AREA)
JP2023552709A 2021-10-05 2022-08-02 Pending JPWO2023058308A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021164232 2021-10-05
PCT/JP2022/029693 WO2023058308A1 (ja) 2021-10-05 2022-08-02 発光装置および発光装置形成基板

Publications (2)

Publication Number Publication Date
JPWO2023058308A1 true JPWO2023058308A1 (ja) 2023-04-13
JPWO2023058308A5 JPWO2023058308A5 (ja) 2024-06-05

Family

ID=85804156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023552709A Pending JPWO2023058308A1 (ja) 2021-10-05 2022-08-02

Country Status (2)

Country Link
JP (1) JPWO2023058308A1 (ja)
WO (1) WO2023058308A1 (ja)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3124456C2 (de) * 1980-06-23 1985-04-25 Futaba Denshi Kogyo K.K., Mobara, Chiba Halbleiterbauelement sowie Verfahren zu dessen Herstellung
JPH0936427A (ja) * 1995-07-18 1997-02-07 Showa Denko Kk 半導体装置及びその製造方法
JP2000269605A (ja) * 1999-03-15 2000-09-29 Akihiko Yoshikawa 窒化ガリウム結晶を有する積層体およびその製造方法
JP2005044778A (ja) * 2003-07-19 2005-02-17 Samsung Sdi Co Ltd 電界発光素子
EP2070122B1 (en) * 2006-08-06 2016-06-29 Lightwave Photonics Inc. Iii-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods
CN103325893B (zh) * 2013-06-25 2015-10-28 清华大学 基于非单晶衬底的GaN基LED外延片
EP3257087A4 (en) * 2015-02-10 2018-10-10 Ibeam Materials, Inc. Epitaxial hexagonal materials on ibad-textured substrates
WO2018049278A1 (en) * 2016-09-12 2018-03-15 University Of Houston System Flexible single-crystal semiconductor heterostructures and methods of making thereof
CN208173629U (zh) * 2017-08-16 2018-11-30 昆山国显光电有限公司 电极及有机电致发光装置
JP6686183B2 (ja) * 2017-09-20 2020-04-22 株式会社東芝 エピタキシャル成長用基板、エピタキシャル成長用基板の製造方法、エピタキシャル基板及び半導体素子
TWI642047B (zh) * 2018-01-26 2018-11-21 鼎展電子股份有限公司 可撓性微發光二極體顯示模組
WO2019168187A1 (ja) * 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法

Also Published As

Publication number Publication date
WO2023058308A1 (ja) 2023-04-13

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Legal Events

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