CN101361179A - 半导体装置的制造方法及半导体装置 - Google Patents
半导体装置的制造方法及半导体装置 Download PDFInfo
- Publication number
- CN101361179A CN101361179A CNA2006800510493A CN200680051049A CN101361179A CN 101361179 A CN101361179 A CN 101361179A CN A2006800510493 A CNA2006800510493 A CN A2006800510493A CN 200680051049 A CN200680051049 A CN 200680051049A CN 101361179 A CN101361179 A CN 101361179A
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- Prior art keywords
- film
- silicon oxynitride
- oxynitride film
- transistorized
- gate insulating
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims description 70
- 230000015572 biosynthetic process Effects 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 238000012545 processing Methods 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 111
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
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- 239000010410 layer Substances 0.000 description 7
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/301117 WO2007086111A1 (ja) | 2006-01-25 | 2006-01-25 | 半導体装置の製造方法および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101361179A true CN101361179A (zh) | 2009-02-04 |
CN101361179B CN101361179B (zh) | 2012-03-21 |
Family
ID=38308921
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800510493A Expired - Fee Related CN101361179B (zh) | 2006-01-25 | 2006-01-25 | 半导体装置的制造方法及半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080265337A1 (zh) |
JP (1) | JPWO2007086111A1 (zh) |
KR (1) | KR101054320B1 (zh) |
CN (1) | CN101361179B (zh) |
WO (1) | WO2007086111A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103069552A (zh) * | 2010-08-04 | 2013-04-24 | 德克萨斯仪器股份有限公司 | 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008270380A (ja) * | 2007-04-18 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2009164424A (ja) * | 2008-01-08 | 2009-07-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JP6300262B2 (ja) * | 2013-09-18 | 2018-03-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP7101090B2 (ja) * | 2018-09-12 | 2022-07-14 | 株式会社東芝 | 半導体装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6087236A (en) * | 1998-11-24 | 2000-07-11 | Intel Corporation | Integrated circuit with multiple gate dielectric structures |
JP3472727B2 (ja) * | 1999-08-13 | 2003-12-02 | Necエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2001237324A (ja) * | 2000-02-22 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
US6730566B2 (en) * | 2002-10-04 | 2004-05-04 | Texas Instruments Incorporated | Method for non-thermally nitrided gate formation for high voltage devices |
US20040070046A1 (en) * | 2002-10-15 | 2004-04-15 | Hiroaki Niimi | Reliable dual gate dielectrics for MOS transistors |
US7183165B2 (en) * | 2002-11-25 | 2007-02-27 | Texas Instruments Incorporated | Reliable high voltage gate dielectric layers using a dual nitridation process |
KR100620197B1 (ko) | 2002-12-30 | 2006-09-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 모스형 트랜지스터 제조 방법 |
JP2004281998A (ja) * | 2003-01-23 | 2004-10-07 | Seiko Epson Corp | トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器 |
JP2004335566A (ja) * | 2003-05-01 | 2004-11-25 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4002219B2 (ja) * | 2003-07-16 | 2007-10-31 | 株式会社ルネサステクノロジ | 半導体装置及び半導体装置の製造方法 |
KR100568859B1 (ko) * | 2003-08-21 | 2006-04-10 | 삼성전자주식회사 | 디램 반도체 장치의 트랜지스터 제조방법 |
US7435651B2 (en) * | 2005-09-12 | 2008-10-14 | Texas Instruments Incorporated | Method to obtain uniform nitrogen profile in gate dielectrics |
-
2006
- 2006-01-25 KR KR1020087017026A patent/KR101054320B1/ko not_active IP Right Cessation
- 2006-01-25 WO PCT/JP2006/301117 patent/WO2007086111A1/ja active Application Filing
- 2006-01-25 JP JP2007555800A patent/JPWO2007086111A1/ja active Pending
- 2006-01-25 CN CN2006800510493A patent/CN101361179B/zh not_active Expired - Fee Related
-
2008
- 2008-07-09 US US12/169,719 patent/US20080265337A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103069552A (zh) * | 2010-08-04 | 2013-04-24 | 德克萨斯仪器股份有限公司 | 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管 |
CN103069552B (zh) * | 2010-08-04 | 2017-02-15 | 德克萨斯仪器股份有限公司 | 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管 |
Also Published As
Publication number | Publication date |
---|---|
CN101361179B (zh) | 2012-03-21 |
KR101054320B1 (ko) | 2011-08-05 |
US20080265337A1 (en) | 2008-10-30 |
JPWO2007086111A1 (ja) | 2009-06-18 |
KR20080083150A (ko) | 2008-09-16 |
WO2007086111A1 (ja) | 2007-08-02 |
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