CN101339899B - Soi衬底的制造方法及半导体装置的制造方法 - Google Patents

Soi衬底的制造方法及半导体装置的制造方法 Download PDF

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Publication number
CN101339899B
CN101339899B CN2008101379109A CN200810137910A CN101339899B CN 101339899 B CN101339899 B CN 101339899B CN 2008101379109 A CN2008101379109 A CN 2008101379109A CN 200810137910 A CN200810137910 A CN 200810137910A CN 101339899 B CN101339899 B CN 101339899B
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layer
semiconductor layer
semiconductor
light
substrate
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CN101339899A (zh
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下村明久
大沼英人
挂端哲弥
牧野贤一郎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2008101379109A 2007-07-04 2008-07-03 Soi衬底的制造方法及半导体装置的制造方法 Expired - Fee Related CN101339899B (zh)

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JP2007-175757 2007-07-04
JP2007175757 2007-07-04
JP2007175757 2007-07-04

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CN101339899A CN101339899A (zh) 2009-01-07
CN101339899B true CN101339899B (zh) 2012-02-08

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US (1) US7678668B2 (enExample)
JP (1) JP2009033151A (enExample)
KR (1) KR101481974B1 (enExample)
CN (1) CN101339899B (enExample)
TW (1) TWI438864B (enExample)

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CN102822978B (zh) * 2010-03-12 2015-07-22 株式会社半导体能源研究所 半导体装置及其制造方法
CN102760697B (zh) 2011-04-27 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
JP6005401B2 (ja) * 2011-06-10 2016-10-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5878330B2 (ja) * 2011-10-18 2016-03-08 株式会社ディスコ レーザー光線の出力設定方法およびレーザー加工装置
KR20140091203A (ko) * 2013-01-10 2014-07-21 삼성전자주식회사 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법
KR101583007B1 (ko) * 2013-12-18 2016-01-07 주식회사 디에이케이코리아 합성수지의 금속 패턴 형성 방법
JP6294670B2 (ja) * 2014-01-07 2018-03-14 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
CN107111972B (zh) * 2014-10-28 2020-04-28 株式会社半导体能源研究所 功能面板、功能面板的制造方法、模块、数据处理装置
JP6454606B2 (ja) * 2015-06-02 2019-01-16 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
JP6396852B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
CN105261586B (zh) * 2015-08-25 2018-05-25 上海新傲科技股份有限公司 带有电荷陷阱和绝缘埋层衬底的制备方法
CN107132616A (zh) * 2017-05-22 2017-09-05 浙江大学 一种基于复合波导的横向电场通过的偏振器
US11232976B2 (en) 2017-07-20 2022-01-25 National Research Council Of Canada Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device
CN110166913A (zh) * 2018-02-14 2019-08-23 复旦大学附属眼耳鼻喉科医院 生物相容性传声器及其制备方法
KR102049806B1 (ko) * 2018-04-25 2020-01-22 한국과학기술연구원 특정 파장의 광원 및 반응성 가스를 이용하여 대상물의 표면을 평탄화하는 방법 및 장치
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
WO2020180940A1 (en) * 2019-03-04 2020-09-10 Board Of Regents, The University Of Texas System Silicon-on-oxide-on-silicon
CN118738077A (zh) * 2019-05-23 2024-10-01 维耶尔公司 集成功能调谐材料与微型装置的方法及其结构
CN110854117A (zh) * 2019-11-26 2020-02-28 中国科学院微电子研究所 一种三维静态随机存取存储器及其制备方法
CN111181518A (zh) * 2019-12-28 2020-05-19 珠海市东恒电子有限公司 一种平衡非平衡射频转换元器件制程方法
CN113540339B (zh) * 2020-04-21 2024-07-12 济南晶正电子科技有限公司 一种制备压电复合薄膜的方法及压电复合薄膜
CN111508891B (zh) * 2020-04-28 2024-03-12 上海华力集成电路制造有限公司 Soi晶圆片的制作方法
CN113745391B (zh) * 2021-08-26 2022-10-14 厦门天马微电子有限公司 一种显示面板和显示装置
CN117066978B (zh) * 2023-10-16 2024-01-05 天通控股股份有限公司 一种钽酸锂键合晶片的减薄方法
KR20250083279A (ko) 2023-11-30 2025-06-10 삼성디스플레이 주식회사 표시 장치의 제조 장치

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Also Published As

Publication number Publication date
TWI438864B (zh) 2014-05-21
TW200908214A (en) 2009-02-16
US20090011575A1 (en) 2009-01-08
KR20090004704A (ko) 2009-01-12
CN101339899A (zh) 2009-01-07
KR101481974B1 (ko) 2015-01-14
JP2009033151A (ja) 2009-02-12
US7678668B2 (en) 2010-03-16

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