CN101323972A - 一种多晶硅定向凝固设备 - Google Patents
一种多晶硅定向凝固设备 Download PDFInfo
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- CN101323972A CN101323972A CNA2008100123542A CN200810012354A CN101323972A CN 101323972 A CN101323972 A CN 101323972A CN A2008100123542 A CNA2008100123542 A CN A2008100123542A CN 200810012354 A CN200810012354 A CN 200810012354A CN 101323972 A CN101323972 A CN 101323972A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 28
- 230000008014 freezing Effects 0.000 title claims abstract description 18
- 238000007710 freezing Methods 0.000 title claims abstract description 18
- 239000000835 fiber Substances 0.000 claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 47
- 239000010439 graphite Substances 0.000 claims description 47
- 229910002804 graphite Inorganic materials 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000005855 radiation Effects 0.000 claims description 13
- 239000000976 ink Substances 0.000 claims description 11
- 241000209456 Plumbago Species 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 19
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 4
- 238000005272 metallurgy Methods 0.000 abstract description 3
- 238000003723 Smelting Methods 0.000 abstract 1
- 238000003912 environmental pollution Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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CN2008100123542A CN101323972B (zh) | 2008-07-14 | 2008-07-14 | 一种多晶硅定向凝固设备 |
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CN2008100123542A CN101323972B (zh) | 2008-07-14 | 2008-07-14 | 一种多晶硅定向凝固设备 |
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CN101323972A true CN101323972A (zh) | 2008-12-17 |
CN101323972B CN101323972B (zh) | 2010-06-02 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010118692A1 (zh) * | 2009-04-17 | 2010-10-21 | 南安市三晶阳光电力有限公司 | 一种采用液态滤网冶金提纯的方法和装置及多晶硅的提纯方法 |
CN102140673A (zh) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | 顶侧分开控制的多晶硅铸锭炉加热装置 |
CN102219221A (zh) * | 2011-06-08 | 2011-10-19 | 大连理工大学 | 一种定向凝固造渣精炼提纯多晶硅的方法 |
CN101660201B (zh) * | 2009-07-09 | 2011-11-30 | 南安市三晶阳光电力有限公司 | 一种多晶硅铸锭炉保温系统 |
CN102289235A (zh) * | 2011-07-22 | 2011-12-21 | 宁波晶元太阳能有限公司 | 基于顶侧分开控制多晶硅铸锭炉的加热控制系统及方法 |
CN102741461A (zh) * | 2009-10-21 | 2012-10-17 | 赛亚特股份有限公司 | 用于获取多晶半导体材料,特别是硅的方法和设备 |
CN102732959A (zh) * | 2011-04-11 | 2012-10-17 | 上海普罗新能源有限公司 | 多晶硅铸锭炉和多晶硅铸锭方法 |
CN102766901A (zh) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 |
CN103361718A (zh) * | 2012-04-09 | 2013-10-23 | 中国科学院物理研究所 | 一种利用物理气相传输法生长氮化铝单晶的方法 |
CN103409789A (zh) * | 2013-06-19 | 2013-11-27 | 青岛隆盛晶硅科技有限公司 | 一种多晶硅定向凝固装置 |
CN103409791A (zh) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的保温体六面式热场结构 |
CN103409798A (zh) * | 2013-08-03 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的下加热器固定结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100861412B1 (ko) * | 2006-06-13 | 2008-10-07 | 조영상 | 다결정 실리콘 잉곳 제조장치 |
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2008
- 2008-07-14 CN CN2008100123542A patent/CN101323972B/zh not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010118692A1 (zh) * | 2009-04-17 | 2010-10-21 | 南安市三晶阳光电力有限公司 | 一种采用液态滤网冶金提纯的方法和装置及多晶硅的提纯方法 |
CN101660201B (zh) * | 2009-07-09 | 2011-11-30 | 南安市三晶阳光电力有限公司 | 一种多晶硅铸锭炉保温系统 |
CN102741461A (zh) * | 2009-10-21 | 2012-10-17 | 赛亚特股份有限公司 | 用于获取多晶半导体材料,特别是硅的方法和设备 |
CN102140673A (zh) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | 顶侧分开控制的多晶硅铸锭炉加热装置 |
CN102732959A (zh) * | 2011-04-11 | 2012-10-17 | 上海普罗新能源有限公司 | 多晶硅铸锭炉和多晶硅铸锭方法 |
WO2012139362A1 (zh) * | 2011-04-11 | 2012-10-18 | 上海普罗新能源有限公司 | 多晶硅铸锭炉和多晶硅铸锭方法 |
CN102219221A (zh) * | 2011-06-08 | 2011-10-19 | 大连理工大学 | 一种定向凝固造渣精炼提纯多晶硅的方法 |
CN102289235A (zh) * | 2011-07-22 | 2011-12-21 | 宁波晶元太阳能有限公司 | 基于顶侧分开控制多晶硅铸锭炉的加热控制系统及方法 |
CN103361718A (zh) * | 2012-04-09 | 2013-10-23 | 中国科学院物理研究所 | 一种利用物理气相传输法生长氮化铝单晶的方法 |
CN102766901A (zh) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 |
CN102766901B (zh) * | 2012-08-20 | 2015-09-30 | 元亮科技有限公司 | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 |
CN103409789A (zh) * | 2013-06-19 | 2013-11-27 | 青岛隆盛晶硅科技有限公司 | 一种多晶硅定向凝固装置 |
CN103409789B (zh) * | 2013-06-19 | 2016-03-30 | 青岛隆盛晶硅科技有限公司 | 一种多晶硅定向凝固装置 |
CN103409791A (zh) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的保温体六面式热场结构 |
CN103409798A (zh) * | 2013-08-03 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的下加热器固定结构 |
CN103409798B (zh) * | 2013-08-03 | 2016-02-24 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的下加热器固定结构 |
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CN101323972B (zh) | 2010-06-02 |
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Effective date of registration: 20120710 Address after: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee after: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. Address before: 116024 Liaoning, Dalian, Ganjingzi Ling Road, No. 2 Patentee before: Dalian University of Technology |
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Effective date of registration: 20171103 Address after: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee after: Qingdao Changsheng Dongfang Industry Group Co., Ltd. Address before: Pudong solar energy industry base in Jimo city of Shandong Province, Qingdao City, 266000 Patentee before: Qingdao Longsheng Crystalline Silicon Science & Technology Co., Ltd. |
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Effective date of registration: 20171124 Address after: Pudong Town Jimo city Shandong province 266234 city of Qingdao Ren Jia Tun Cun Ren Jia Tun Lu Patentee after: QINGDAO NEW ENERGY SOLUTIONS INC. (NESI) Address before: 1 road 266000 in Shandong province Qingdao city Laoshan District No. 1 Keyuan latitude B block 7 layer B4-2 Patentee before: Qingdao Changsheng Dongfang Industry Group Co., Ltd. |
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Granted publication date: 20100602 Termination date: 20190714 |