CN101316945B - 低介电常数薄膜的灰化/湿法蚀刻损伤的抵抗性以及整体稳定性的改进方法 - Google Patents

低介电常数薄膜的灰化/湿法蚀刻损伤的抵抗性以及整体稳定性的改进方法 Download PDF

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CN101316945B
CN101316945B CN2006800445403A CN200680044540A CN101316945B CN 101316945 B CN101316945 B CN 101316945B CN 2006800445403 A CN2006800445403 A CN 2006800445403A CN 200680044540 A CN200680044540 A CN 200680044540A CN 101316945 B CN101316945 B CN 101316945B
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organosilicon compound
flow rate
chamber
dielectric constant
low dielectric
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CN101316945A (zh
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桑·H·安
亚历山德罗斯·T·迪莫斯
希姆·M·萨德
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Applied Materials Inc
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Applied Materials Inc
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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CN2006800445403A 2005-12-13 2006-12-08 低介电常数薄膜的灰化/湿法蚀刻损伤的抵抗性以及整体稳定性的改进方法 Expired - Fee Related CN101316945B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/304,847 2005-12-13
US11/304,847 US20070134435A1 (en) 2005-12-13 2005-12-13 Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
PCT/US2006/061789 WO2007117320A2 (en) 2005-12-13 2006-12-08 A method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films

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CN101316945A CN101316945A (zh) 2008-12-03
CN101316945B true CN101316945B (zh) 2013-03-20

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US (1) US20070134435A1 (enExample)
JP (1) JP2009519612A (enExample)
KR (1) KR20080083662A (enExample)
CN (1) CN101316945B (enExample)
WO (1) WO2007117320A2 (enExample)

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