WO2007117320A2 - A method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films - Google Patents

A method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films Download PDF

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Publication number
WO2007117320A2
WO2007117320A2 PCT/US2006/061789 US2006061789W WO2007117320A2 WO 2007117320 A2 WO2007117320 A2 WO 2007117320A2 US 2006061789 W US2006061789 W US 2006061789W WO 2007117320 A2 WO2007117320 A2 WO 2007117320A2
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organosilicon compound
flow rate
dielectric constant
chamber
low dielectric
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French (fr)
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WO2007117320A3 (en
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Sang H. Ahn
Alexandros T. Demos
Hichem M'saad
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2008545924A priority patent/JP2009519612A/ja
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Publication of WO2007117320A3 publication Critical patent/WO2007117320A3/en
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    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
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Definitions

  • Embodiments of the present invention generally relate to the fabrication of integrated circuits. More particularly, embodiments of the present invention relate to a process for depositing low dielectric constant films on substrates.
  • insulators having low dielectric constants are desirable.
  • examples of insulators having low dielectric constants include spin-on glass, fluorine-doped silicon glass (FSG), carbon-doped oxide, porous carbon-doped oxide, and polytetrafluoroethylene (PTFE), which are all commercially available.
  • low dielectric constant organosilicon films having k values less than about 3.5 have been developed.
  • One method that has been used to develop low dielectric constant organosilicon films has been to deposit the films from a gas mixture comprising an organosilicon compound and a compound comprising thermally labile species or volatile groups and then post-treat the deposited films to remove the thermally labile species or volatile groups, such as organic groups, from the deposited films.
  • the removal of the thermally labile species or volatile groups from the deposited films creates nanometer-sized voids in the films, which lowers the dielectric constant of the films, as air has a dielectric constant of approximately 1.
  • low dielectric constant organosilicon films that have desirable low dielectric constants have been developed as described above, some of these low dielectric constant films have exhibited less than desirable mechanical properties, such as poor mechanical strength, which renders the films susceptible to damage during subsequent semiconductor processing steps.
  • Semiconductor processing steps which can damage the low dielectric constant films include plasma-based processes, such as plasma cleaning steps that are often performed on patterned low dielectric constant films before a barrier or seed layer is deposited on the low dielectric constant films. Ashing processes to remove photoresists or bottom anti- reflective coatings (BARC) from the dielectric films and wet etch processes can also damage the films.
  • plasma-based processes such as plasma cleaning steps that are often performed on patterned low dielectric constant films before a barrier or seed layer is deposited on the low dielectric constant films.
  • BARC bottom anti- reflective coatings
  • the present invention generally provides methods for depositing a low dielectric constant film.
  • the method includes introducing a first organosilicon compound into a chamber at a first flow rate, wherein the first organosilicon compound has an average of one or more Si-C bonds per Si atom, introducing a second organosilicon compound into the chamber at a second flow rate, wherein the second organosilicon compound has an average number of Si-C bonds per Si atom that is greater than the average number of Si-C bonds per atom in the first organosilicon compound, and wherein the second flow rate divided by the sum of the first flow rate and the second flow rate is between about 5% and about 50%, and reacting the first organosilicon compound and the second organosilicon compound in the presence of RF power to deposit a low dielectric constant film on a substrate in the chamber.
  • An oxidizing gas may also be reacted with the first organosilicon compound and the second organosilicon compound.
  • the proportion of the second organosilicon precursor can be controlled to improve chemical resistance to plasma and wet etch processes with a minimal impact to the mechanical properties.
  • the method includes introducing a first organosilicon compound into a chamber at a first flow rate, wherein the first organosilicon compound has an average of one or more Si-C bonds per Si atom, introducing a second organosilicon compound into the chamber at a second flow rate, wherein the second organosilicon compound has an average number of Si-C bonds per Si atom that is greater than the average number of Si-C bonds per atom in the first organosilicon compound, and wherein the second flow rate divided by the sum of the first flow rate and the second flow rate is between about 5% and about 50%, introducing a thermally labile compound into the chamber, and reacting the first organosilicon compound, the second organosilicon compound, and the thermally labile compound in the presence of RF power to deposit a low dielectric constant film on a substrate in the chamber.
  • An oxidizing gas may also be reacted with the first organosilicon compound, the second organosilicon compound, and the thermally labile compound.
  • the method includes introducing methyldiethoxysilane into a chamber at a first flow rate, introducing trimethylsilane into the chamber at a second flow rate, wherein the second flow rate divided by the sum of the first flow rate and the second flow rate is between about 5% and about 50%, introducing alpha-terpinene into the chamber, and reacting the methyldiethoxysilane, trimethylsilane, and alpha-terpinene in the presence of RF power to deposit a low dielectric constant film on a substrate in the chamber.
  • An oxidizing gas may also be reacted with the methyldiethoxysilane, trimethylsilane, and alpha-terpinene.
  • Figure 1 is a graph showing film composition ratios (CH x /SiO, SiCH 3 ZSiO, Si-H/SiO) for low dielectric constant films deposited from precursor mixtures having different ratios of two organosilicon compound precursors according to embodiments of the invention.
  • Figure 2 is a graph showing the dielectric constant and shrinkage of low dielectric constant films deposited from precursor mixtures having different ratios of two organosilicon compound precursors according to embodiments of the invention.
  • Figure 3 is a graph showing the stress and modulus of low dielectric constant films deposited from precursor mixtures having different ratios of two organosilicon compound precursors according to embodiments of the invention.
  • the present invention provides a method of depositing a low dielectric constant film comprising silicon, oxygen, and carbon by reacting a first organosilicon compound and a second organosilicon compound in a chamber at conditions sufficient to deposit a low dielectric constant film.
  • the low dielectric constant film typically has a dielectric constant of about 3.0 or less, preferably about 2.5 or less.
  • the film may be deposited using plasma enhanced chemical vapor deposition (PECVD) in a chamber capable of performing chemical vapor deposition (CVD).
  • the plasma may be generated using constant radio frequency (RF) power, pulsed RF power, high frequency RF power, dual frequency RF power, combinations thereof, or other plasma generation techniques.
  • RF radio frequency
  • the first organosilicon compound has an average of one or more Si-C bonds per Si atom.
  • the first organosilicon compound comprises at least one Si-O bond, e.g., two Si-O bonds, a Si-C bond, and a Si-H bond.
  • An organosilicon compound comprising at least one Si-O bond, a Si-C bond, and a Si-H bond is desirable because it was found that Si-O bonds in deposited dielectric films enhance networking with Si-H bonds, while Si-CH 3 bonds in deposited dielectric films contribute to a low dielectric constant and enhance the films' resistance to plasma and wet etch damage.
  • Examples of compounds that may be used as the first organosilicon compound are the following: methyldiethoxysilane (mDEOS, CH 3 - SiH-(OCH 2 CHa) 2 ), 1 ,3-dimethyldisiloxane (CH 3 -SiH 2 -O-SiH 2 -CH 3 ), 1 ,1 ,3,3- tetramethyldisiloxane (((CH 3 ) 2 -SiH-O-SiH-(CH 3 ) 2 ), bis(1 -methyldisiloxanyl)methane ((CH 3 -SiH 2 -O-SiH 2 -) 2 -CH 2 ), and 2,2-bis(1 -methyldisiloxanyl)propane (CH 3 -SiH 2 -O- SiH 2 -) 2 -C(CH 3 ) 2 .
  • mDEOS CH 3 - SiH-(OCH 2 CHa) 2
  • the second organosilicon compound has an average number of Si-C bonds per Si atom that is greater than the average number of Si-C bonds per Si atom in the first organosilicon compound. For example, if methyldiethoxysilane, which has one Si-C bond per Si atom, is used as the first organosilicon compound, the second organosilicon compound has two or more Si-C bonds per Si atom. For example, the second organosilicon compound may be trimethylsilane, which has three Si-C bonds per Si atom.
  • the first organosilicon compound and the second organosilicon compound are also reacted with an oxidizing gas.
  • Oxidizing gases that may be used include oxygen (O 2 ), ozone (O 3 ), nitrous oxide (N 2 O), carbon monoxide (CO), carbon dioxide (CO 2 ), water (H 2 O), 2,3-butane dione, or combinations thereof.
  • oxygen O 2
  • ozone O 3
  • nitrous oxide N 2 O
  • CO carbon dioxide
  • CO 2 carbon dioxide
  • water H 2 O
  • 2,3-butane dione or combinations thereof.
  • an ozone generator converts from 6% to 20%, typically about 15%, by weight of the ozone to the oxygen in a source gas, with the remainder typically being oxygen.
  • the ozone concentration may be increased or decreased based upon the amount of ozone desired and the type of ozone generating equipment used.
  • Disassociation of oxygen or the oxygen containing compounds may occur in a microwave chamber prior to entering the deposition chamber.
  • RF
  • one or more carrier gases are introduced into the chamber in addition to the first and second organosilicon compounds.
  • carrier gases include helium, argon, hydrogen, ethylene, and combinations thereof.
  • one or more thermally labile compounds e.g., one or more hydrocarbon compounds
  • hydrocarbon compounds include hydrocarbons as well as hydrocarbon-based compounds that include other atoms in addition to carbon and hydrogen.
  • the one or more hydrocarbon compounds are reacted with the first and second organosilicon compounds and the optional oxidizing gas to deposit a low dielectric constant film.
  • the hydrocarbon compounds may include thermally labile species or volatile groups.
  • the thermally labile species or volatile groups may be cyclic groups.
  • the term "cyclic group" as used herein is intended to refer to a ring structure.
  • the ring structure may contain as few as three atoms.
  • the atoms may include carbon, nitrogen, oxygen, fluorine, and combinations thereof, for example.
  • the cyclic group may include one or more single bonds, double bonds, triple bonds, and any combination thereof.
  • a cyclic group may include one or more aromatics, aryls, phenyls, cyclohexanes, cyclohexadienes, cycloheptadienes, and combinations thereof.
  • the cyclic group may also be bi-cyclic or tri-cyclic.
  • the cyclic group is bonded to a linear or branched functional group.
  • the linear or branched functional group preferably contains an alkyl or vinyl alkyl group and has between one and twenty carbon atoms.
  • the linear or branched functional group may also include oxygen atoms, such as in a ketone, ether, and ester.
  • oxygen atoms such as in a ketone, ether, and ester.
  • Some exemplary compounds that may be used and have at least one cyclic group include alpha-terpinene (ATP), norbornadiene, vinylcyclohexane (VCH), and phenylacetate.
  • the first organosilicon compound may be introduced into the chamber at a flow rate between about 50 mgm and about 5000 mgm.
  • the second organosilicon compound may be introduced into the chamber at a flow rate between about 5 seem and about 1000 seem.
  • the flow rates of the first organosilicon compound and the second organosilicon compound are chosen such that the flow rate of the second organosilicon compound divided by the sum of the flow rate of the first organosilicon compound and the flow rate of the second organosilicon compound is between about 5% and about 50%.
  • the relative flow rates of the first and second organosilicon compounds will be discussed further below.
  • the one or more optional oxidizing gases have a flow rate between about 50 and about 5,000 seem, such as between about 100 and about 1 ,000 seem, preferably about 200 seem.
  • the one or more optional hydrocarbon compounds are introduced to the chamber at a flow rate of about 100 to about 5,000 mgm, such as between about 500 and about 5,000 mgm, preferably about 3,000 mgm.
  • the one or more optional carrier gases have a flow rate between about 500 seem and about 5,000 seem.
  • the first organosilicon compound is mDEOS
  • the second organosilicon compound is TMS
  • the hydrocarbon compound is alpha-terpinene
  • the oxidizing gas is oxygen.
  • the substrate is typically maintained at a temperature between about 25°C and about 400 0 C.
  • a power density ranging between about 0.07 W/cm 2 and about 2.8 W/cm 2 , which is a RF power level of between about 50 W and about 2000 W for a 300 mm substrate is typically used.
  • the RF power level is between about 100 W and about 1500 W.
  • the RF power is provided at a frequency between about 0.01 MHz and 300 MHz.
  • the RF power may be provided at a mixed frequency, such as at a high frequency of about 13.56 MHz and a low frequency of about 350 kHz.
  • the RF power may be cycled or pulsed to reduce heating of the substrate and promote greater porosity in the deposited film.
  • the RF power may also be continuous or discontinuous.
  • the film may be post-treated to remove thermally labile species or volatile groups, such as organic groups, from the deposited film.
  • Post-treatments include electron beam treatments, UV treatments, thermal treatments (in the absence of an electron beam and/or UV treatment), and combinations thereof.
  • Exemplary electron beam conditions include a chamber temperature of between about 200 0 C and about 600 0 C, e.g. about 350 0 C to about 400 0 C.
  • the electron beam energy may be from about 0.5 keV to about 30 keV.
  • the exposure dose may be between about 1 ⁇ C/cm 2 and about 400 ⁇ C/cm 2 .
  • the chamber pressure may be between about 1 mTorr and about 100 mTorr.
  • the gas ambient in the chamber may be any of the following gases: nitrogen, oxygen, hydrogen, argon, a blend of hydrogen and nitrogen, ammonia, xenon, or any combination of these gases.
  • the electron beam current may be between about 0.15 mA and about 50 mA.
  • the electron beam treatment may be performed for between about 1 minute and about 15 minutes.
  • an exemplary electron beam chamber that may be used is an EBkTM electron beam chamber available from Applied Materials, Inc. of Santa Clara, CA.
  • Exemplary UV post-treatment conditions include a chamber pressure of between about 1 Torr and about 10 Torr and a substrate support temperature of between about 350 0 C and about 500 0 C.
  • the UV radiation may be provided by any UV source, such as mercury microwave arc lamps, pulsed xenon flash lamps, or high-efficiency UV light emitting diode arrays.
  • the UV radiation may have a wavelength of between about 170 nm and about 400 nm, for example.
  • UV chambers and treatment conditions that may be used are described in commonly assigned U.S. Patent Application Serial No. 11/124,908, filed on May 9, 2005, which is incorporated by reference herein.
  • the NanoCureTM chamber from Applied Materials, Inc. is an example of a commercially available chamber that may be used for UV post-treatments.
  • An exemplary thermal post-treatment includes annealing the film at a substrate temperature between about 200 0 C and about 500 0 C for about 2 seconds to about 3 hours, preferably about 0.5 to about 2 hours, in a chamber.
  • a non- reactive gas such as helium, hydrogen, nitrogen, or a mixture thereof may be introduced into the chamber at a rate of about 100 to about 10,000 seem.
  • the chamber pressure is maintained between about 1 mTorr and about 10 Torr.
  • the preferred substrate spacing is between about 300 mils and about 800 mils.
  • the substrate in the example was a 300 mm substrate.
  • the low dielectric constant film was deposited on the substrate in a Producer ® chamber available from Applied Materials, Inc. of Santa Clara, CA. While the low dielectric constant film was post- treated using e-beam, alternatively the low dielectric constant film can be cured thermally at 400 0 C for 1 hour at a very low pressure in the mTorr range in an EBkTM electron beam chamber available from Applied Materials, Inc. of Santa Clara, CA or at 400 0 C for 2 hours at a low pressure in the Torr range in a Producer ® chamber.
  • Example 1 Example 1 hour
  • a low dielectric constant film was deposited on a substrate at about 7.5 Torr and a temperature of about 260°C.
  • the following processing gases and flow rates were used:
  • the film was deposited from a mixture having a TMS/mDEOS+TMS ratio of 25% (62 seem TMS/186 seem mDEOS+62 seem TMS).
  • the substrate was positioned about 300 mils from the gas distribution showerhead.
  • a power level of 600 W at a frequency of 13.56 MHz was applied to the showerhead for plasma enhanced deposition of the films.
  • the film had a dielectric constant (k) before post- treatment of about 2.8 as measured using SSM 5100 Hg CV measurement tool at 0.1 MHz.
  • the low dielectric constant film on the substrate had the following properties after post-treatment: a stress of about 50 MPa, a hardness of 0.78 GPa, and a modulus of 5.4 GPa.
  • Figure 1 is a graph showing the relative amounts of different bond types, including CH x /SiO, Si-CH 3 ZSiO, Si-H/SiO, in low dielectric constant films deposited using gas mixtures comprising mDEOS as the first organosilicon compound, TMS as the second organosilicon compound, alpha- terpinene, and oxygen.
  • the relative amounts of the different bond types were estimated by the FTIR peak areas of the bonds in the deposited films after post- treatment.
  • the films were deposited using different ratios of TMS flow rate/(TMS flow rate + mDEOS flow rate).
  • Figure 1 shows that the relative amount of Si-CH3 bonds to SiO bonds in the films increases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases, while the relative amount of Si-H bonds to SiO bonds in the films decreases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases.
  • the relative amount of CHx bonds to SiO bonds also increases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases. It is believed that the increased amount of Si-CH 3 bonds and the decreased amount of Si-H bonds in the films deposited according to embodiments of the invention compared to films deposited from one organosilicon precursor improves the films' resistance to undesirable water absorption.
  • Figure 2 is a graph showing the dielectric constant (k) and shrinkage of low dielectric constant films deposited from gas mixtures comprising mDEOS as the first organosilicon compound, TMS as the second organosilicon compound, alpha- terpinene, and oxygen.
  • the films were deposited using different ratios of TMS flow rate/(TMS flow rate + mDEOS flow rate).
  • Figure 2 shows that films having a dielectric constant of 2.56 or less can be obtained according to embodiments of the invention and that the dielectric constant of the films increases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases.
  • the shrinkage of the films increases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases.
  • Figure 3 is a graph showing the stress and modulus of low dielectric constant films deposited from gas mixtures comprising mDEOS as the first organosilicon compound, TMS as the second organosilicon compound, alpha- terpinene, and oxygen.
  • the films were deposited using different ratios of TMS flow rate/(TMS flow rate + mDEOS flow rate).
  • Figure 3 shows that as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases, the stress of the films decreases, which is desirable.
  • the modulus of the films also decreases as the amount of TMS relative to the total amount of TMS and mDEOS in the gas mixture increases.

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