JP2010504648A - 低k誘電膜の二層キャッピング - Google Patents
低k誘電膜の二層キャッピング Download PDFInfo
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Abstract
【解決手段】 第一有機シリコン化合物と、第一酸化ガスと、一つ以上の炭化水素化合物とを含む第一ガス混合物を基板表面上に第一低誘電率膜を堆積させるのに充分な堆積条件でチャンバ内へ分配させる。第二有機シリコン化合物と第二酸化ガスとを有する第二ガス混合物を、第一低誘電率膜上に第二低誘電率膜を堆積させるのに充分な堆積条件でチャンバ内に分配させる。第二酸化ガスのチャンバ内への流量を増加させ、第二有機シリコン化合物のチャンバ内への流量を減少させて、第二低誘電率膜上に酸化物を多く含むキャップを堆積させる。
【選択図】 図1
Description
[0001]本発明の実施形態は、一般的には、集積回路の製造に関する。より詳細には、実施形態は、基板上に誘電体層を堆積させる方法及び誘電体層を含む構造に関する。
[0002]半導体デバイスの幾何学的形状は、数十年前に始めてこのようなデバイスが紹介されてから、劇的にサイズが減少してきた。それ以来、集積回路は、たいてい、2年間で半分のサイズになるという規則(しばしばムーアの法則と呼ばれる)が続き、これはチップ上に適合するデバイスの数が2年毎に2倍になることを意味する。今日の製造プラントは、通常0.13μm、0.1μmもの特徴部サイズをもつデバイスを生産しており、将来の工場はすぐに更に小さな形状を持つデバイスを生産するであろう。
1,3,5-トリシラノ-2,4,6-トリメチレン -(-SiH2CH2-)3-(環状)
1,3,5,7-テトラメチルシクロテトラシロキサン(TMCTS) -(-SiHCH3-O-)4-(環状)
オクタメチルシクロテトラシロキサン(OMCTS) -(-Si(CH3)2-O-)4-(環状)
1,3,5,7,9-ペンタメチルシクロペンタシロキサン -(-SiHCH3-O-)5-(環状)
1,3,5,7-テトラシラノ-2,6-ジオキシ-4,8-ジメチレン -(-SiH2-CH2-SiH2-O-)2-(環状)
ヘキサメチルシクロトリシロキサン -(-Si(CH3)2-O-)3-(環状)
[0019]適切な線状有機シリコン化合物は、一つ以上のシリコン原子と一つ以上の炭素原子を有する直鎖又は分枝鎖構造を持つ脂肪族有機シリコン化合物を含む。有機シリコン化合物は、更に、一つ以上の酸素原子を含んでもよい。幾つかの例示的直鎖有機シリコン化合物としては以下のものが挙げられる:
メチルシラン CH3-SiH3
ジメチルシラン (CH3)2-SiH2
トリメチルシラン(TMS) (CH3)3-SiH
エチルシラン CH3-CH2-SiH3
ジシラノメタン SiH3-CH2-SiH3
ビス(メチルシラノ)メタン CH3-SiH2-CH2-SiH2-CH3
1,2,-ジシラノエタン SiH3-CH2-CH2-SiH3
1,2,-ビス(メチルシラノ)エタン CH3-SiH2-CH2-CH2-SiH2-CH3
2,2-ジシラノプロパン SiH3-C(CH3)2-SiH3
ジエトキシメチルシラン(DEMS) CH3-SiH-(O-CH2-CH3)2
1,3-ジメチルジシロキサン CH3-SiH2-O-SiH2-CH3
1,1,3,3-テトラメチルジシロキサン (CH3)2-SiH-O-SiH-(CH3)2
ヘキサメチルジシロキサン(HMDS) (CH3)3-Si-O-Si-(CH3)3
1,3-ビス(シラノメチレン)ジシロキサン (SiH3-CH2-SiH2-)2-O
ビス(1-メチルジシロキサニル)メタン (CH3-SiH2-O-SiH2-)2-CH2
2,2-ビス(1-メチルジシロキサニル)プロパン (CH3-SiH2-O-SiH2-)2-C(CH3)2
ヘキサメトキシジシロキサン(HMDOS) (CH3O)3-Si-O-Si-(OCH3)3
ジメチルジメトキシシラン(DMDMOS) (CH3O)2-Si-(CH3)2
ジメトキシメチルビニルシラン(DMMVS) (CH3O)2-Si-(CH3)-CH2=CH3
[0020]本明細書に用いられる用語“環状基”は、環構造を意味するものである。環構造は、わずか三つの原子を含んでもよい。これらの原子には、例えば、炭素、シリコン、窒素、酸素、フッ素、又はこれらの組み合わせが含まれてもよい。環状基には、一つ以上の単結合、二重結合、三重結合、又はこれらいかなる組み合わせが含まれてもよい。例えば、環状基には、一つ以上の芳香族、アリール、フェニル、シクロヘキサン、シクロヘキサジエン、シクロヘプタジエン、又はこれらの組み合わせが含まれてもよい。環状基は、二環式又は三環式であってもよい。更に、環状基は、好ましくは、直鎖又は分枝鎖官能基に結合している。直鎖又は分枝鎖官能基は、好ましくは、アルキル基又はビニルアルキル基を含んでもよく、1〜12個の炭素原子を有する。直鎖又は分枝鎖官能基には、ケトン、エーテル、エステルのような酸素原子を含んでもよい。少なくとも一つの環状基を有する幾つかの例示的化合物としては、アルファ-テルピネン(ATP)、ノルボルナジエン、ビニルシクロヘキサン(VCH)、及びフェニルアセテートが挙げられる。
Claims (20)
- 基板を処理をする方法であって:
第一有機シリコン化合物と、第一酸化ガスと、一つ以上の炭化水素化合物とを含む第一ガス混合物を、該基板上に第一低誘電率膜を堆積させるのに充分な堆積条件でチャンバ内へ分配するステップと;
第二有機シリコン化合物と第二酸化ガスを含む第二ガス混合物を、該第一低誘電率膜上に第二低誘電率膜を堆積させるのに充分な堆積条件で該チャンバ内へ分配するステップと;
該第二酸化ガスの該チャンバ内への流量を増加させるステップと;
第二有機シリコン化合物の該チャンバ内への流量を減少させるステップと;
該第二低誘電率膜上に酸化物を多く含むキャップを堆積させるステップと;
を含む。前記方法。 - 該酸化物を多く含むキャップと該第二低誘電率膜を平坦化するステップを更に含む、請求項1に記載の方法。
- 該第一有機シリコン化合物が、1,3,5-トリシラノ-2,4,6-トリメチレン、1,3,5,7-テトラメチルシクロテトラシロキサン、オクタメチルシクロテトラシロキサン、1,3,5,7,9-ペンタメチルシクロペンタシロキサン、1,3,5,7-テトラシラノ-2,6-ジオキシ-4,8-ジメチレン、ヘキサメチルシクロトリシロキサン、ジエトキシメチルシラン、ジメチル,ジメトキシシラン、ジメトキシメチルビニルシラン、トリメチルシラン、これらの誘導体、及びこれらの混合物からなる群より選ばれる、請求項1に記載の方法。
- 該第一有機シリコン化合物が、ジエトキシメチルシランである、請求項1に記載の方法。
- 該第二有機シリコン化合物が、オクタメチルシクロテトラシロキサン又はトリメチルシランを含む、請求項1に記載の方法。
- 該一つ以上の炭化水素化合物が、炭素原子5個又は6個の少なくとも一つの環を含む、請求項1に記載の方法。
- 該一つ以上の炭化水素化合物が、アルファ-テルピネン、ビニルシクロヘキサン、ノルボルナジエン、フェニルアセテート、及びこれらの組み合わせからなる群より選ばれる、請求項1に記載の方法
- 該第二有機シリコン化合物がオクタメチルシクロテトラシロキサンであり、該一つ以上の炭化水素化合物がアルファ-テルピネン又はノルボルナジエンである、請求項4に記載の方法。
- 該第一酸化ガス及び第二酸化ガスが、酸素、オゾン、二酸化炭素、一酸化炭素、水、亜酸化窒素、及び2,3-ブタンジオンからなる群より選ばれる、請求項1に記載の方法。
- 該第二酸化ガスが、酸素を含む、請求項9に記載の方法。
- 該第一低誘電率膜の誘電率が、約2.5以下であり、該第二低誘電率膜の誘電率が、約2.5〜約3.5の範囲にある、請求項1に記載の方法。
- 基板を処理する方法であって:
第一有機シリコン化合物と、酸化ガスと、少なくとも一つの環状基を有する一つ以上の炭化水素化合物とを含むガス混合物をチャンバ内へ分配するステップと;
RF電力の存在下に該基板上に第一低誘電率膜を堆積させるステップと;
該第一低誘電率膜が堆積された後に該RF電力を止めるステップと;
該第一低誘電率膜を硬化するステップと;
第二有機シリコン化合物と第二酸化ガスを含むガス混合物を該チャンバ内へ分配するステップと;
RF電力の存在下に該第一低誘電率膜上に第二低誘電率膜を堆積させるステップと;
該第二低誘電率膜が堆積された後に該RF電力を止めるステップと;
該第二酸化ガスの該チャンバ内への流量を増加させるステップと;
該第二有機シリコン化合物の該チャンバ内への流量を減少させるステップと;
該第二低誘電率膜上に酸化物を多く含むキャップを堆積させるステップと;
を含む、前記方法。 - 該第一低誘電率膜の誘電率が約2.5以下であり、該第二低誘電率膜の誘電率が約2.5〜約3.5の範囲にある、請求項12に記載の方法。
- 該酸化物を多く含むキャップと該第二低誘電率膜を硬化し平坦化するステップを更に含む、請求項12に記載の方法。
- 該第一有機シリコン化合物が、1,3,5-トリシラノ-2,4,6-トリメチレン、1,3,5,7-テトラメチルシクロテトラシロキサン、オクタメチルシクロテトラシロキサン、1,3,5,7,9-ペンタメチルシクロペンタシロキサン、1,3,5,7-テトラシラノ-2,6-ジオキシ-4,8-ジメチレン、ヘキサメチルシクロトリシロキサン、ジエトキシメチルシラン、ジメチル,ジメトキシシラン、ジメトキシメチルビニルシラン、トリメチルシラン、これらの誘導体、及びこれらの混合物からなる群より選ばれる、請求項12に記載の方法。
- 該第一有機シリコン化合物が、ジエトキシメチルシランである、請求項12に記載の方法。
- 該第二有機シリコン化合物が、オクタメチルシクロテトラシロキサン又はトリメチルシランを含む、請求項12に記載の方法。
- 少なくとも一つの環状基を有する該一つ以上の炭化水素化合物が、アルファ-テルピネン、ビニルシクロヘキサン、ノルボルナジエン、フェニルアセテート、及びこれらの組み合わせからなる群より選ばれる、請求項12に記載の方法
- 該第二有機シリコン化合物がオクタメチルシクロテトラシロキサンであり、該一つ以上の炭化水素化合物がアルファ-テルピネン又はノルボルナジエンである、請求項16に記載の方法。
- 該第一酸化ガス及び第二酸化ガスが、酸素、オゾン、二酸化炭素、一酸化炭素、水、亜酸化窒素、及び2,3-ブタンジオンからなる群より選ばれる、請求項12に記載の方法。
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