KR100899726B1 - 디지털 액체 유량계에 의해 낮은 k 유전체 막을 위한개시층을 개선하는 방법 - Google Patents
디지털 액체 유량계에 의해 낮은 k 유전체 막을 위한개시층을 개선하는 방법 Download PDFInfo
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- KR100899726B1 KR100899726B1 KR1020070108877A KR20070108877A KR100899726B1 KR 100899726 B1 KR100899726 B1 KR 100899726B1 KR 1020070108877 A KR1020070108877 A KR 1020070108877A KR 20070108877 A KR20070108877 A KR 20070108877A KR 100899726 B1 KR100899726 B1 KR 100899726B1
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- South Korea
- Prior art keywords
- porogen
- flow rate
- organosilicon
- compound
- depositing
- Prior art date
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- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims description 4
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
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Abstract
Description
ATP 개시 유속(mg/min.) | ATP 상승율(mg/min./sec.) | 결함들 |
200 | 400 | 10 미만 |
200 | 500 | 10 미만 |
200 | 650 | 10 미만 |
200 | 700 | 10 미만 |
200 | 800 | 10 미만 |
400 | 400 | 10 미만 |
400 | 500 | 10 미만 |
400 | 650 | 10 초과 |
400 | 700 | 10 미만 |
400 | 800 | 10 미만 |
600 | 400 | 10 초과 |
600 | 500 | 10 초과 |
600 | 650 | 10 초과 |
600 | 700 | 1000 초과 |
600 | 800 | 1000 초과 |
Claims (20)
- 유기실리케이트(organosilicate) 유전체 층을 증착하는 방법으로서,전력공급되는 전극을 갖는 처리 챔버내에 기판을 배치하는 단계;상기 처리 챔버로 하나 이상의 산화 가스들을 유동시키는 단계;제 1 유기실리콘(organosilicon) 유속에서 제 1 디지털 액체 유량계를 통해 제 1 벌크 저장 용기로부터 제 1 기화(vaporization) 주입 밸브로 유기실리콘 화합물을 유동시키는 단계;상기 유기실리콘 화합물을 기화시키고 상기 유기실리콘 화합물과 제 1 캐리어 가스를 상기 처리 챔버로 유동시키는 단계;RF 전력의 존재에서 개시층을 증착하기 위해 상기 제 1 유기실리콘 유속을 유지하는 단계;제 1 포로겐(porogen) 유속에서 제 2 디지털 액체 유량계를 통해 제 2 벌크 저장 용기로부터 제 2 기화 주입 밸브로 포로겐 화합물을 유동시키는 단계;상기 포로겐 화합물을 기화시키고 상기 포로겐 화합물과 제 2 캐리어 가스를 상기 처리 챔버로 유동시키는 단계;RF 전력의 존재에서 전이층을 증착하면서 상기 제 1 유기실리콘 유속과 상기 제 1 포로겐 유속을 증가시키는 단계; 및RF 전력의 존재에서 포로겐 함유 유기실리케이트 유전체 층을 증착하기 위해 제 2 유기실리콘 유속과 제 2 포로겐 유속을 유지하는 단계를 포함하는 유기실리케이트 유전체 층을 증착하는 방법.
- 제 1 항에 있어서,상기 제 1 유기실리콘 유속은 1초 동안 유지되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 1 항에 있어서,상기 제 1 포로겐 유속은 200 mg/min 내지 600 mg/min 인, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 1 항에 있어서,상기 유기실리콘 화합물은 테트라메틸사이클로테트라실록산, 옥타메틸사이클로테트라실록산, 펜타메틸사이클로펜타실록산, 헥사메틸사이클로트리실록산, 디에톡시메틸실란, 디메틸디실록산, 테트라실라노-2,6-디옥시-4,8-디메틸렌, 테트라메틸디실록산, 헥사메틸디실록산, 1,3-비스(실라노메틸렌)디실록산, 비스(1-메틸디실록사닐)-메탄, 비스(1-메틸디실록사닐)프로판, 헥사메톡시디실록산, 디메틸디메톡시실란, 및 디메톡시메틸비닐실란으로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 1 항에 있어서,상기 포로겐 화합물은 부타디엔, 아이소피렌(isoprene), 사이클로헥사디엔, 바이사이클로헵타디엔, 1-메틸-4-(1-메틸에틸)-1,3-사이클로헥사디엔, 노보나디엔(norbornadiene), 1-메틸-4-(1-메틸에틸)-벤젠, 3-카렌(carene), 펜콘(fenchone), 리모넨(limonene), 사이클로펜텐(cyclopentene) 산화물, 비닐-1,4-디옥시닐 에테르, 비닐 퍼릴(vinyl furyl) 에테르, 비닐-1,4-디옥신, 비닐 푸란(vinyl furan), 메틸 푸로에이트(furoate), 퍼릴 포메이트, 퍼릴 아세테이트, 푸랄디히드, 디퍼릴 케톤(difuryl ketone), 디퍼릴 에테르, 디퍼퍼릴(difurfuryl) 에테르, 푸란, 및 1,4-디옥신으로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 1 항에 있어서,상기 하나 이상의 산화 가스들은 산소, 오존, 일산화질소, 일산화탄소, 및 이산화탄소로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 4 항에 있어서,상기 유기실리콘 화합물은 디에톡시메틸실란을 포함하고, 상기 포로겐 화합물은 1-메틸-4-(1-메틸에틸)-1,3-사이클로헥사디엔을 포함하는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 7 항에 있어서,상기 제 1 및 제 2 캐리어 가스는 각각 헬륨, 아르곤, 및 이산화탄소로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
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- 유기실리케이트 유전체 층을 증착하는 방법으로서,전력공급되는 전극을 갖는 처리 챔버내에 기판을 배치하는 단계;하나 이상의 산화 가스들을 상기 처리 챔버로 유동시키는 단계;제 1 유기실리콘 유속에서 제 1 디지털 액체 유량계를 통해 제 1 벌크 저장 용기로부터 제 1 기화 주입 밸브로 유기실리콘 화합물을 유동시키는 단계;상기 유기실리콘 화합물을 기화시키고 상기 유기실리콘 화합물과 제 1 캐리어 가스를 상기 처리 챔버로 유동시키는 단계;RF 전력의 존재에서 개시층을 증착하기 위해 상기 제 1 유기실리콘 유속을 유지하는 단계;200 mg/min 내지 600 mg/min의 제 1 포로겐 유속에서 제 2 디지털 액체 유량계를 통해 제 2 벌크 저장 용기로부터 제 2 기화 주입 밸브로 포로겐 화합물을 유동시키는 단계;상기 포로겐 화합물을 기화시키고 상기 포로겐 화합물과 제 2 캐리어 가스를 상기 처리 챔버로 유동시키는 단계;RF 전력의 존재에서 전이층을 증착하면서, 상기 제 1 유기실리콘 유속을 증가시키고 400 mg/min./sec. 내지 800 mg/min./sec.의 상승율에서 상기 제 1 포로겐 유속을 증가시키는 단계; 및RF 전력의 존재에서 포로겐 함유 유기실리케이트 유전체 층을 증착하기 위해 제 2 유기실리콘 유속과 제 2 포로겐 유속을 유지하는 단계를 포함하는 유기실리케이트 유전체 층을 증착하는 방법.
- 제 17 항에 있어서,상기 유기실리콘 화합물은 테트라메틸사이클로테트라실록산, 옥타메틸사이클로테트라실록산, 펜타메틸사이클로펜타실록산, 헥사메틸사이클로트리실록산, 디에톡시메틸실란, 디메틸디실록산, 테트라실라노-2,6-디옥시-4,8-디메틸렌, 테트라메틸디실록산, 헥사메틸디실록산, 1,3-비스(실라노메틸렌)디실록산, 비스(1-메틸디실록사닐)-메탄, 비스(1-메틸디실록사닐)프로판, 헥사메톡시디실록산, 디메틸디메톡시실란, 및 디메톡시메틸비닐실란으로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 17 항에 있어서,상기 포로겐 화합물은 부타디엔, 아이소피렌(isoprene), 사이클로헥사디엔, 바이사이클로헵타디엔, 1-메틸-4-(1-메틸에틸)-1,3-사이클로헥사디엔, 노보나디엔(norbornadiene), 1-메틸-4-(1-메틸에틸)-벤젠, 3-카렌(carene), 펜콘(fenchone), 리모넨(limonene), 사이클로펜텐(cyclopentene) 산화물, 비닐-1,4-디옥시닐 에테르, 비닐 퍼릴 에테르, 비닐-1,4-디옥신, 비닐 푸란(vinyl furan), 메틸 푸로에이트(furoate), 퍼릴 포메이트, 퍼릴 아세테이트, 푸랄디히드(furaldehyde), 디퍼릴 케톤(difuryl ketone), 디퍼릴 에테르, 디퍼퍼릴(difurfuryl) 에테르, 푸란, 및 1,4-디옥신으로 이루어진 그룹에서 선택되는, 유기실리케이트 유전체 층을 증착하는 방법.
- 제 19 항에 있어서,상기 유기실리콘 화합물은 디에톡시메틸실란을 포함하고, 상기 포로겐 화합물은 1-메틸-4-(1-메틸에틸)-1,3-사이클로헥사디엔을 포함하는, 유기실리케이트 유전체 층을 증착하는 방법.
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US20070134435A1 (en) * | 2005-12-13 | 2007-06-14 | Ahn Sang H | Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films |
US7410916B2 (en) * | 2006-11-21 | 2008-08-12 | Applied Materials, Inc. | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter |
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CN101187011A (zh) | 2008-05-28 |
US7947611B2 (en) | 2011-05-24 |
TW200845202A (en) | 2008-11-16 |
US7410916B2 (en) | 2008-08-12 |
TWI382467B (zh) | 2013-01-11 |
US20080119058A1 (en) | 2008-05-22 |
CN101886254A (zh) | 2010-11-17 |
CN101886254B (zh) | 2012-10-31 |
CN101187011B (zh) | 2010-12-15 |
KR20080046088A (ko) | 2008-05-26 |
US20080280457A1 (en) | 2008-11-13 |
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