CN101304660B - 增强型快速热处理设备和方法 - Google Patents
增强型快速热处理设备和方法 Download PDFInfo
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- CN101304660B CN101304660B CN2006800422562A CN200680042256A CN101304660B CN 101304660 B CN101304660 B CN 101304660B CN 2006800422562 A CN2006800422562 A CN 2006800422562A CN 200680042256 A CN200680042256 A CN 200680042256A CN 101304660 B CN101304660 B CN 101304660B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Furnace Details (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (34)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/228,964 US7184657B1 (en) | 2005-09-17 | 2005-09-17 | Enhanced rapid thermal processing apparatus and method |
US11/228,964 | 2005-09-17 | ||
PCT/US2006/024815 WO2007040689A1 (en) | 2005-09-17 | 2006-06-26 | Enhanced rapid thermal processing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101304660A CN101304660A (zh) | 2008-11-12 |
CN101304660B true CN101304660B (zh) | 2011-04-06 |
Family
ID=37769699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800422562A Active CN101304660B (zh) | 2005-09-17 | 2006-06-26 | 增强型快速热处理设备和方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7184657B1 (zh) |
JP (1) | JP5183477B2 (zh) |
CN (1) | CN101304660B (zh) |
WO (1) | WO2007040689A1 (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
JP4988202B2 (ja) | 2002-12-20 | 2012-08-01 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の支持及び熱処理の方法とシステム |
JP5630935B2 (ja) * | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
US7820936B2 (en) * | 2004-07-02 | 2010-10-26 | Boston Scientific Scimed, Inc. | Method and apparatus for controlling and adjusting the intensity profile of a laser beam employed in a laser welder for welding polymeric and metallic components |
WO2007030941A1 (en) * | 2005-09-14 | 2007-03-22 | Mattson Technology Canada, Inc. | Repeatable heat-treating methods and apparatus |
US7184657B1 (en) * | 2005-09-17 | 2007-02-27 | Mattson Technology, Inc. | Enhanced rapid thermal processing apparatus and method |
JP5967859B2 (ja) * | 2006-11-15 | 2016-08-10 | マトソン テクノロジー、インコーポレイテッド | 熱処理中の被加工物を支持するシステムおよび方法 |
CN101702950B (zh) * | 2007-05-01 | 2012-05-30 | 加拿大马特森技术有限公司 | 辐照脉冲热处理方法和设备 |
KR101001331B1 (ko) * | 2007-06-25 | 2010-12-14 | 데이또꾸샤 가부시키가이샤 | 가열 장치, 기판처리장치 및 반도체장치의 제조 방법 |
JP2010537067A (ja) * | 2007-08-23 | 2010-12-02 | コロレツプ・インコーポレイテツド | 印捺および染色のためのパルス加熱の方法および装置 |
DE102007058002B4 (de) * | 2007-12-03 | 2016-03-17 | Mattson Thermal Products Gmbh | Vorrichtung zum thermischen Behandeln von scheibenförmigen Halbleitersubstraten |
JP5718809B2 (ja) | 2008-05-16 | 2015-05-13 | マトソン テクノロジー、インコーポレイテッド | 加工品の破壊を防止する方法および装置 |
US8150242B2 (en) * | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Use of infrared camera for real-time temperature monitoring and control |
JP5615102B2 (ja) * | 2010-08-31 | 2014-10-29 | 株式会社ニューフレアテクノロジー | 半導体製造方法及び半導体製造装置 |
US9279727B2 (en) | 2010-10-15 | 2016-03-08 | Mattson Technology, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
EP2683515A4 (en) | 2011-03-10 | 2015-06-03 | Mesocoat Inc | METHOD AND APPARATUS FOR FORMING PLATED METAL PRODUCTS |
US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
JP5996409B2 (ja) | 2012-12-12 | 2016-09-21 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US8893702B2 (en) | 2013-02-20 | 2014-11-25 | Lam Research Corporation | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses |
MX2015013236A (es) | 2013-03-15 | 2016-04-04 | Mesocoat Inc | Polvos de aspersion termica de materiales ceramicos ternarios y metodo de recubrimiento. |
CN103337457B (zh) * | 2013-05-29 | 2016-05-25 | 京东方科技集团股份有限公司 | 退火装置和退火工艺 |
CN104250849B (zh) * | 2013-06-25 | 2017-03-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室及外延生长设备 |
WO2015188878A1 (en) * | 2014-06-13 | 2015-12-17 | Applied Materials, Inc. | Clamp arrangement for a substrate carrier, and method for opening and fastening a clamp arrangement |
US10208381B2 (en) * | 2014-12-23 | 2019-02-19 | Rec Silicon Inc | Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor |
JP6502713B2 (ja) * | 2015-03-25 | 2019-04-17 | 株式会社Screenホールディングス | 熱処理装置 |
JP6637321B2 (ja) * | 2016-02-03 | 2020-01-29 | 株式会社Screenホールディングス | 熱処理用サセプタおよび熱処理装置 |
US11193178B2 (en) | 2017-08-16 | 2021-12-07 | Beijing E-town Semiconductor Technology Co., Ltd. | Thermal processing of closed shape workpieces |
US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
US6056434A (en) * | 1998-03-12 | 2000-05-02 | Steag Rtp Systems, Inc. | Apparatus and method for determining the temperature of objects in thermal processing chambers |
US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
CN1606132A (zh) * | 2003-10-06 | 2005-04-13 | 日东电工株式会社 | 将半导体晶片与支承件分离的方法以及使用该方法的装置 |
US6941063B2 (en) * | 2000-12-04 | 2005-09-06 | Mattson Technology Canada, Inc. | Heat-treating methods and systems |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US622990A (en) * | 1899-04-11 | Harold boyd | ||
US4560420A (en) | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
US4818327A (en) | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US4857689A (en) | 1988-03-23 | 1989-08-15 | High Temperature Engineering Corporation | Rapid thermal furnace for semiconductor processing |
US4981815A (en) | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
DE4109956A1 (de) | 1991-03-26 | 1992-10-01 | Siemens Ag | Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung |
JPH04354121A (ja) * | 1991-05-31 | 1992-12-08 | Kawasaki Steel Corp | 急速加熱装置 |
US5210959A (en) * | 1991-08-19 | 1993-05-18 | Praxair Technology, Inc. | Ambient-free processing system |
US5467220A (en) | 1994-02-18 | 1995-11-14 | Applied Materials, Inc. | Method and apparatus for improving semiconductor wafer surface temperature uniformity |
JPH0864548A (ja) * | 1994-08-25 | 1996-03-08 | Kokusai Electric Co Ltd | ウェーハのランプアニール方法及び装置 |
JPH08139047A (ja) * | 1994-11-10 | 1996-05-31 | New Japan Radio Co Ltd | 熱処理装置 |
US6002109A (en) * | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
JP3586031B2 (ja) * | 1996-03-27 | 2004-11-10 | 株式会社東芝 | サセプタおよび熱処理装置および熱処理方法 |
US5848889A (en) * | 1996-07-24 | 1998-12-15 | Applied Materials Inc. | Semiconductor wafer support with graded thermal mass |
US6222990B1 (en) | 1997-12-03 | 2001-04-24 | Steag Rtp Systems | Heating element for heating the edges of wafers in thermal processing chambers |
US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
US6771895B2 (en) | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
US6621199B1 (en) | 2000-01-21 | 2003-09-16 | Vortek Industries Ltd. | High intensity electromagnetic radiation apparatus and method |
US6610968B1 (en) | 2000-09-27 | 2003-08-26 | Axcelis Technologies | System and method for controlling movement of a workpiece in a thermal processing system |
US6529686B2 (en) * | 2001-06-06 | 2003-03-04 | Fsi International, Inc. | Heating member for combination heating and chilling apparatus, and methods |
KR101067901B1 (ko) | 2001-12-26 | 2011-09-28 | 맷슨 테크날러지 캐나다 인코퍼레이티드 | 온도 측정 및 열처리 방법과 시스템 |
US6849831B2 (en) | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
US7062161B2 (en) * | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
JP4988202B2 (ja) | 2002-12-20 | 2012-08-01 | マトソン テクノロジー カナダ インコーポレイテッド | 工作物の支持及び熱処理の方法とシステム |
JP5630935B2 (ja) | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
US7781947B2 (en) | 2004-02-12 | 2010-08-24 | Mattson Technology Canada, Inc. | Apparatus and methods for producing electromagnetic radiation |
US7184657B1 (en) * | 2005-09-17 | 2007-02-27 | Mattson Technology, Inc. | Enhanced rapid thermal processing apparatus and method |
-
2005
- 2005-09-17 US US11/228,964 patent/US7184657B1/en active Active
-
2006
- 2006-06-26 WO PCT/US2006/024815 patent/WO2007040689A1/en active Application Filing
- 2006-06-26 CN CN2006800422562A patent/CN101304660B/zh active Active
- 2006-06-26 JP JP2008531088A patent/JP5183477B2/ja active Active
-
2007
- 2007-01-12 US US11/622,712 patent/US7398014B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
US6056434A (en) * | 1998-03-12 | 2000-05-02 | Steag Rtp Systems, Inc. | Apparatus and method for determining the temperature of objects in thermal processing chambers |
US6941063B2 (en) * | 2000-12-04 | 2005-09-06 | Mattson Technology Canada, Inc. | Heat-treating methods and systems |
CN1606132A (zh) * | 2003-10-06 | 2005-04-13 | 日东电工株式会社 | 将半导体晶片与支承件分离的方法以及使用该方法的装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5183477B2 (ja) | 2013-04-17 |
WO2007040689A1 (en) | 2007-04-12 |
JP2009509332A (ja) | 2009-03-05 |
US20080152330A1 (en) | 2008-06-26 |
CN101304660A (zh) | 2008-11-12 |
US7184657B1 (en) | 2007-02-27 |
US7398014B1 (en) | 2008-07-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181213 Address after: American California Co-patentee after: Beijing Yitang Semiconductor Technology Co., Ltd. Patentee after: Mattson Tech Inc. Address before: American California Patentee before: Mattson Technology, Inc. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: MATTSON TECHNOLOGY, Inc. Patentee after: Beijing Yitang Semiconductor Technology Co.,Ltd. Address before: California, USA Patentee before: MATTSON TECHNOLOGY, Inc. Patentee before: Beijing Yitang Semiconductor Technology Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: MATTSON TECHNOLOGY, Inc. Patentee after: Beijing Yitang Semiconductor Technology Co.,Ltd. Address before: California, USA Patentee before: MATTSON TECHNOLOGY, Inc. Patentee before: Beijing Yitang Semiconductor Technology Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |