CN101291973B - 热固性树脂组合物和光半导体密封材料 - Google Patents
热固性树脂组合物和光半导体密封材料 Download PDFInfo
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- CN101291973B CN101291973B CN2006800387056A CN200680038705A CN101291973B CN 101291973 B CN101291973 B CN 101291973B CN 2006800387056 A CN2006800387056 A CN 2006800387056A CN 200680038705 A CN200680038705 A CN 200680038705A CN 101291973 B CN101291973 B CN 101291973B
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-
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
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- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- Microelectronics & Electronic Packaging (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP303292/2005 | 2005-10-18 | ||
| JP2005303292 | 2005-10-18 | ||
| PCT/JP2006/320711 WO2007046399A1 (ja) | 2005-10-18 | 2006-10-18 | 熱硬化性樹脂組成物及び光半導体封止材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101291973A CN101291973A (zh) | 2008-10-22 |
| CN101291973B true CN101291973B (zh) | 2012-10-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006800387056A Active CN101291973B (zh) | 2005-10-18 | 2006-10-18 | 热固性树脂组合物和光半导体密封材料 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7932319B2 (cg-RX-API-DMAC7.html) |
| EP (2) | EP1947128B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4322949B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101011421B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN101291973B (cg-RX-API-DMAC7.html) |
| MY (1) | MY145608A (cg-RX-API-DMAC7.html) |
| TW (1) | TW200722456A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2007046399A1 (cg-RX-API-DMAC7.html) |
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|---|---|---|---|---|
| EP2138525B1 (en) | 2007-04-17 | 2012-12-26 | Asahi Kasei Chemicals Corporation | Epoxy silicone and method for production thereof, and curable resin composition using the same and use thereof |
| JP2009120437A (ja) * | 2007-11-14 | 2009-06-04 | Niigata Univ | シロキサンをグラフト化したシリカ及び高透明シリコーン組成物並びに該組成物で封止した発光半導体装置 |
| TW200925173A (en) * | 2007-12-07 | 2009-06-16 | Jsr Corp | Curative composition, coating composition for optical element, material for LED sealing, and manufacturing method of those compositions |
| JP2009203475A (ja) * | 2008-02-28 | 2009-09-10 | Mitsubishi Chemicals Corp | 封止樹脂及びその製造方法 |
| JP5139882B2 (ja) * | 2008-05-08 | 2013-02-06 | 旭化成ケミカルズ株式会社 | 感光性樹脂組成物及びこれを用いた樹脂層付き基材の製造方法 |
| JP5170765B2 (ja) * | 2008-09-22 | 2013-03-27 | 日東電工株式会社 | 熱硬化性組成物及び光半導体装置 |
| KR20110030014A (ko) * | 2009-09-17 | 2011-03-23 | 주식회사 동진쎄미켐 | 발광다이오드의 밀봉 방법 및 이에 의해 밀봉된 발광다이오드 |
| JP2011103440A (ja) * | 2009-10-14 | 2011-05-26 | Nitto Denko Corp | 熱硬化型ダイボンドフィルム |
| US9593209B2 (en) | 2009-10-22 | 2017-03-14 | Dow Corning Corporation | Process for preparing clustered functional polyorganosiloxanes, and methods for their use |
| TWI502004B (zh) * | 2009-11-09 | 2015-10-01 | Dow Corning | 群集官能性聚有機矽氧烷之製法及其使用方法 |
| TWI408174B (zh) * | 2010-02-09 | 2013-09-11 | Nanya Plastics Corp | 應用在光學封裝及塗佈之環氧矽氧烷樹脂組成物 |
| JP2012041381A (ja) * | 2010-08-12 | 2012-03-01 | Asahi Kasei Chemicals Corp | エポキシ変性シリコーン及びその製造方法、並びに、それを用いた硬化性樹脂組成物とその用途 |
| US20120148773A1 (en) * | 2010-12-09 | 2012-06-14 | Parent J Scott | Thermoset Ionomer Derivatives of Halogenated Polymers |
| CN103459469B (zh) * | 2011-03-30 | 2015-09-09 | 旭化成化学株式会社 | 有机聚硅氧烷、其制造方法和含有有机聚硅氧烷的固化性树脂组合物 |
| CN103165764A (zh) * | 2011-12-16 | 2013-06-19 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
| KR101858638B1 (ko) * | 2012-03-23 | 2018-05-16 | 가부시키가이샤 아데카 | 규소 함유 경화성 수지조성물 |
| JP6065514B2 (ja) * | 2012-10-18 | 2017-01-25 | 日本化成株式会社 | シリコーン樹脂組成物、シリコーン樹脂成形品、半導体発光素子用封止材及び半導体発光装置 |
| KR102206708B1 (ko) | 2013-02-11 | 2021-01-25 | 다우 실리콘즈 코포레이션 | 안정한 열 라디칼 경화성 실리콘 접착제 조성물 |
| JP6426628B2 (ja) | 2013-02-11 | 2018-11-21 | ダウ シリコーンズ コーポレーション | 官能基密集型ポリオルガノシロキサン及びシリコーン反応性希釈剤を含む硬化性シリコーン組成物 |
| WO2014124367A1 (en) | 2013-02-11 | 2014-08-14 | Dow Corning Corporation | Method for forming thermally conductive thermal radical cure silicone compositions |
| CN104968750B (zh) | 2013-02-11 | 2017-04-19 | 道康宁公司 | 簇合官能化聚有机硅氧烷、形成所述簇合官能化聚有机硅氧烷的工艺及其使用方法 |
| CN104968748B (zh) | 2013-02-11 | 2017-03-29 | 道康宁公司 | 烷氧基官能化有机聚硅氧烷树脂和聚合物及其相关形成方法 |
| US10370572B2 (en) | 2013-02-11 | 2019-08-06 | Dow Silicones Corporation | Moisture-curable hot melt silicone adhesive compositions including an alkoxy-functional siloxane reactive resin |
| US9567442B2 (en) * | 2013-03-29 | 2017-02-14 | Idemitsu Kosan Co., Ltd. | Polyorganosiloxane and polycarbonate-polyorganosiloxane copolymer |
| WO2014181754A1 (ja) * | 2013-05-08 | 2014-11-13 | 旭化成ケミカルズ株式会社 | 硬化性樹脂組成物及びその硬化物、光半導体用封止材及びダイボンディング材、並びに光半導体発光素子 |
| DE102013222003A1 (de) | 2013-10-29 | 2015-04-30 | Evonik Industries Ag | Mittel für die Versiegelungen von Licht-emittierenden Dioden |
| WO2015066165A1 (en) * | 2013-10-31 | 2015-05-07 | Dow Corning Corporation | Cross-linked composition and method of forming the same |
| JP6439616B2 (ja) * | 2015-07-14 | 2018-12-19 | 信越化学工業株式会社 | 光半導体素子封止用熱硬化性エポキシ樹脂組成物及びそれを用いた光半導体装置 |
| EP3196229B1 (en) | 2015-11-05 | 2018-09-26 | Dow Silicones Corporation | Branched polyorganosiloxanes and related curable compositions, methods, uses and devices |
| EP3670579B1 (en) * | 2017-08-16 | 2022-06-15 | Asahi Kasei Kabushiki Kaisha | Silanol composition, cured product, adhesive, and method for curing silanol composition |
| US20210277237A1 (en) * | 2018-06-08 | 2021-09-09 | Elkem Silicones Shanghai Co., Ltd. | Curable silicone composition |
| WO2020131369A1 (en) * | 2018-12-21 | 2020-06-25 | Dow Silicones Corporation | Methods for making polyfunctional organosiloxanes and compositions containing same |
| JP7172805B2 (ja) * | 2019-04-02 | 2022-11-16 | 信越化学工業株式会社 | 付加硬化型シリコーン接着剤組成物 |
| JP7390236B2 (ja) * | 2020-03-31 | 2023-12-01 | 京セラ株式会社 | 異方導電性樹脂組成物、及びマイクロledディスプレイ装置 |
| JP7727666B2 (ja) * | 2020-06-24 | 2025-08-21 | ダウ シリコーンズ コーポレーション | 多官能性オルガノシロキサンの製造方法及びそれを含有する組成物 |
| EP4172228B1 (en) * | 2020-06-24 | 2024-03-13 | Dow Silicones Corporation | Composition, silicone polyether surfactant formed therefrom, and related methods and articles |
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| JP2004289102A (ja) * | 2003-01-29 | 2004-10-14 | Asahi Kasei Chemicals Corp | 発光素子封止用熱硬化性組成物および発光ダイオード |
| JP2005171021A (ja) * | 2003-12-09 | 2005-06-30 | Shin Etsu Chem Co Ltd | 熱硬化性樹脂組成物及び光半導体封止剤 |
| JP2005272492A (ja) * | 2004-03-22 | 2005-10-06 | Shin Etsu Chem Co Ltd | 硬化性シリコーン組成物 |
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| JP3128386B2 (ja) | 1993-04-07 | 2001-01-29 | 三洋電機株式会社 | 神経モデル素子 |
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| JP4301905B2 (ja) * | 2003-09-17 | 2009-07-22 | スタンレー電気株式会社 | 熱硬化性樹脂組成物、該熱硬化性樹脂組成物で発光素子を封止した発光ダイオードおよび色変換型発光ダイオード |
| JP4142070B2 (ja) | 2006-06-23 | 2008-08-27 | 信越ポリマー株式会社 | キャリアテープの製造方法 |
-
2006
- 2006-10-18 US US12/083,864 patent/US7932319B2/en active Active
- 2006-10-18 TW TW095138447A patent/TW200722456A/zh not_active IP Right Cessation
- 2006-10-18 MY MYPI20081173A patent/MY145608A/en unknown
- 2006-10-18 KR KR1020087011597A patent/KR101011421B1/ko not_active Expired - Fee Related
- 2006-10-18 JP JP2007540996A patent/JP4322949B2/ja not_active Expired - Fee Related
- 2006-10-18 EP EP06821913.8A patent/EP1947128B1/en active Active
- 2006-10-18 CN CN2006800387056A patent/CN101291973B/zh active Active
- 2006-10-18 EP EP12173487.5A patent/EP2508545B1/en active Active
- 2006-10-18 WO PCT/JP2006/320711 patent/WO2007046399A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004289102A (ja) * | 2003-01-29 | 2004-10-14 | Asahi Kasei Chemicals Corp | 発光素子封止用熱硬化性組成物および発光ダイオード |
| JP2005171021A (ja) * | 2003-12-09 | 2005-06-30 | Shin Etsu Chem Co Ltd | 熱硬化性樹脂組成物及び光半導体封止剤 |
| JP2005272492A (ja) * | 2004-03-22 | 2005-10-06 | Shin Etsu Chem Co Ltd | 硬化性シリコーン組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101011421B1 (ko) | 2011-01-28 |
| TWI373485B (cg-RX-API-DMAC7.html) | 2012-10-01 |
| EP1947128B1 (en) | 2013-10-09 |
| JPWO2007046399A1 (ja) | 2009-04-23 |
| US20090258992A1 (en) | 2009-10-15 |
| TW200722456A (en) | 2007-06-16 |
| EP2508545B1 (en) | 2014-06-18 |
| EP1947128A1 (en) | 2008-07-23 |
| KR20080056305A (ko) | 2008-06-20 |
| EP2508545A1 (en) | 2012-10-10 |
| US7932319B2 (en) | 2011-04-26 |
| EP1947128A4 (en) | 2012-01-04 |
| CN101291973A (zh) | 2008-10-22 |
| MY145608A (en) | 2012-03-15 |
| JP4322949B2 (ja) | 2009-09-02 |
| WO2007046399A1 (ja) | 2007-04-26 |
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