CN101286013B - 校准量测工具的衬底及其形成方法以及量测工具校准方法 - Google Patents

校准量测工具的衬底及其形成方法以及量测工具校准方法 Download PDF

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Publication number
CN101286013B
CN101286013B CN2008101003995A CN200810100399A CN101286013B CN 101286013 B CN101286013 B CN 101286013B CN 2008101003995 A CN2008101003995 A CN 2008101003995A CN 200810100399 A CN200810100399 A CN 200810100399A CN 101286013 B CN101286013 B CN 101286013B
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CN
China
Prior art keywords
pattern
radiation
collimating marks
pattern characteristics
substrate
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Expired - Fee Related
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CN2008101003995A
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English (en)
Chinese (zh)
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CN101286013A (zh
Inventor
胡戈·奥古斯帝努斯·约瑟夫·克拉默
安托万·加斯东·玛丽·基尔斯
格拉尔杜斯·玛丽亚·约翰内斯·维吉纳德·扬森
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ASML Netherlands BV
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ASML Netherlands BV
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN2008101003995A 2007-03-27 2008-03-27 校准量测工具的衬底及其形成方法以及量测工具校准方法 Expired - Fee Related CN101286013B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/727,648 2007-03-27
US11/727,648 US7605907B2 (en) 2007-03-27 2007-03-27 Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method

Publications (2)

Publication Number Publication Date
CN101286013A CN101286013A (zh) 2008-10-15
CN101286013B true CN101286013B (zh) 2011-04-20

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CN2008101003995A Expired - Fee Related CN101286013B (zh) 2007-03-27 2008-03-27 校准量测工具的衬底及其形成方法以及量测工具校准方法

Country Status (5)

Country Link
US (1) US7605907B2 (https=)
JP (1) JP2009002931A (https=)
KR (2) KR20080087734A (https=)
CN (1) CN101286013B (https=)
TW (1) TWI389137B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008153023A1 (ja) * 2007-06-11 2008-12-18 Nikon Corporation 計測部材、センサ、計測方法、露光装置、露光方法、及びデバイス製造方法
NL2005412A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Calibration method and lithographic apparatus using such a calibration method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
DE102010041556A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie und Verfahren zur mikrolithographischen Abbildung
JP5832345B2 (ja) * 2012-03-22 2015-12-16 株式会社ニューフレアテクノロジー 検査装置および検査方法
CN103454860B (zh) * 2012-05-30 2015-11-25 中芯国际集成电路制造(上海)有限公司 曝光的方法
NL2011683A (en) 2012-12-13 2014-06-16 Asml Netherlands Bv Method of calibrating a lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product.
CN104570589B (zh) * 2013-10-12 2018-08-07 北大方正集团有限公司 掩模板及利用掩模板进行光刻和测量步进精度的方法
CN104635418B (zh) * 2013-11-07 2018-01-02 北大方正集团有限公司 一种掩模版及一种测量光刻机的版旋转偏差的方法
CN104810302B (zh) * 2014-01-23 2018-12-25 北大方正集团有限公司 一种监控晶圆的使用方法
NL2014956A (en) * 2014-07-16 2016-04-12 Asml Netherlands Bv Lithographic Method and Apparatus.
CN106597810B (zh) * 2015-10-14 2019-05-21 华邦电子股份有限公司 晶圆图案化制程
WO2017144343A1 (en) * 2016-02-23 2017-08-31 Asml Netherlands B.V. Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program
CN109541898B (zh) * 2017-09-21 2020-05-01 上海微电子装备（集团）股份有限公司 一种平面光栅尺定位误差校准方法
CN110034097B (zh) * 2018-01-12 2021-02-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US12276921B2 (en) 2020-05-07 2025-04-15 Asml Netherlands B.V. Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
KR102625950B1 (ko) * 2021-12-20 2024-01-17 주식회사 휴비츠 광간섭 단층 촬영 장치의 캘리브레이션 방법
CN117524962B (zh) * 2024-01-05 2024-04-16 苏州海通机器人系统有限公司 一种晶圆校准装置及校准方法
US20250314974A1 (en) * 2024-04-08 2025-10-09 Onto Innovation Inc. Front-to-back overlay (ftbo) standard

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5703692A (en) * 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US5880838A (en) * 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US5798947A (en) * 1996-09-25 1998-08-25 The Board Of Trustees Of The Leland Stanford, Jr. University Methods, apparatus and computer program products for self-calibrating two-dimensional metrology stages
US5963329A (en) * 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
JP4032501B2 (ja) * 1998-04-22 2008-01-16 株式会社ニコン 投影光学系の結像特性計測方法及び投影露光装置
JP2000133570A (ja) * 1998-10-26 2000-05-12 Nikon Corp 露光装置及び露光方法
JP2000267295A (ja) * 1999-03-15 2000-09-29 Fujitsu Ltd 露光方法及びその装置
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
JP2003532306A (ja) * 2000-05-04 2003-10-28 ケーエルエー・テンコール・テクノロジーズ・コーポレーション リソグラフィ・プロセス制御のための方法およびシステム
JP2002083808A (ja) 2000-06-28 2002-03-22 Nec Corp 溶剤プリウェットを用いたコーティング・プロセス
US6753961B1 (en) * 2000-09-18 2004-06-22 Therma-Wave, Inc. Spectroscopic ellipsometer without rotating components
IL138552A (en) * 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Lateral shift measurement using an optical technique
US6768983B1 (en) * 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6699627B2 (en) * 2000-12-08 2004-03-02 Adlai Smith Reference wafer and process for manufacturing same
JP4387583B2 (ja) * 2000-12-22 2009-12-16 富士通マイクロエレクトロニクス株式会社 校正用プレート、校正用プレート生成方法、及び半導体装置の製造方法
US6515744B2 (en) * 2001-02-08 2003-02-04 Therma-Wave, Inc. Small spot ellipsometer
WO2002065545A2 (en) * 2001-02-12 2002-08-22 Sensys Instruments Corporation Overlay alignment metrology using diffraction gratings
US6699624B2 (en) * 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
WO2002070985A1 (en) * 2001-03-02 2002-09-12 Accent Optical Technologies, Inc. Line profile asymmetry measurement using scatterometry
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6597447B1 (en) * 2001-07-31 2003-07-22 Advanced Micro Devices, Inc. Method and apparatus for periodic correction of metrology data
US6785638B2 (en) * 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US7061615B1 (en) * 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
US6608690B2 (en) * 2001-12-04 2003-08-19 Timbre Technologies, Inc. Optical profilometry of additional-material deviations in a periodic grating
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US6813034B2 (en) * 2002-02-05 2004-11-02 Therma-Wave, Inc. Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements
US7061627B2 (en) * 2002-03-13 2006-06-13 Therma-Wave, Inc. Optical scatterometry of asymmetric lines and structures
JP2003279321A (ja) * 2002-03-22 2003-10-02 Hitachi High-Technologies Corp 微小寸法校正用標準試料
US6721691B2 (en) * 2002-03-26 2004-04-13 Timbre Technologies, Inc. Metrology hardware specification using a hardware simulator
US6928628B2 (en) * 2002-06-05 2005-08-09 Kla-Tencor Technologies Corporation Use of overlay diagnostics for enhanced automatic process control
US7046376B2 (en) * 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
US6919964B2 (en) * 2002-07-09 2005-07-19 Therma-Wave, Inc. CD metrology analysis using a finite difference method
SG120958A1 (en) * 2002-11-01 2006-04-26 Asml Netherlands Bv Inspection method and device manufacturing method
JP4144352B2 (ja) * 2002-12-26 2008-09-03 株式会社ニコン 線幅計測装置、線幅計測方法、線幅変動検出装置および線幅変動表示方法
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
WO2005010942A2 (en) * 2003-07-17 2005-02-03 Toppan Photomasks, Inc. Method and apparatus for calibrating a metrology tool
US7061623B2 (en) * 2003-08-25 2006-06-13 Spectel Research Corporation Interferometric back focal plane scatterometry with Koehler illumination
US20050134820A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Method for exposing a substrate, patterning device, and lithographic apparatus
JP4401814B2 (ja) * 2004-02-25 2010-01-20 株式会社日立ハイテクノロジーズ 測長用標準部材及び電子ビーム測長装置
US7102736B2 (en) 2004-06-29 2006-09-05 Asml Netherlands B.V. Method of calibration, calibration substrate, and method of device manufacture
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US20060058979A1 (en) * 2004-09-14 2006-03-16 Markle Richard J Method and system for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data
US20060109463A1 (en) * 2004-11-22 2006-05-25 Asml Netherlands B.V. Latent overlay metrology
US7453577B2 (en) * 2004-12-14 2008-11-18 Asml Netherlands B.V. Apparatus and method for inspecting a patterned part of a sample
JP4527559B2 (ja) 2005-01-31 2010-08-18 株式会社ディスコ 露光装置
JP2008046210A (ja) * 2006-08-11 2008-02-28 Elpida Memory Inc レチクル及びこれを用いた露光方法及び装置、並びにレチクルのパターン作成方法、パターン形成方法及び半導体装置

Also Published As

Publication number Publication date
KR20100006553A (ko) 2010-01-19
JP2009002931A (ja) 2009-01-08
KR101037411B1 (ko) 2011-05-30
US7605907B2 (en) 2009-10-20
KR20080087734A (ko) 2008-10-01
US20080239277A1 (en) 2008-10-02
CN101286013A (zh) 2008-10-15
TW200847186A (en) 2008-12-01
TWI389137B (zh) 2013-03-11

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