CN101286013B - Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method - Google Patents
Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method Download PDFInfo
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The present invention provides a method for forming a substrate for use in calibrating a metrology tool in order to compensate for orientation-dependent variations within the metrology tool, as well as a method for calibrating the metrology tool.
Description
Technical field
The present invention relates to be formed for method, calibration substrate and the method that is used for the calibration measurement instrument of the substrate of calibration measurement instrument.
Background technology
Lithographic equipment is a kind of machine that required pattern is applied to (usually on the target part of described substrate) on the substrate.For example, lithographic equipment can be used in the manufacturing of integrated circuit (IC).In this case, the pattern that is called mask or mask (reticle) alternatively can be formed device and be used to be created on circuit pattern to be formed on the individual layer of described IC.This design transfer can be arrived on the target part (for example, comprising a part of tube core, one or more tube core) on the substrate (for example, silicon wafer).Typically, via imaging with described design transfer on the radiation-sensitive materials that is provided with on the described substrate (resist) layer.Usually, independent substrate will comprise the network of the adjacent target part of continuous formation pattern.Known lithographic equipment comprises: so-called stepper, in described stepper, by exposing an entire pattern onto described target each the target part of radiation of partly coming up; And so-called scanner, in described scanner, scan described pattern, come each target part of radiation along scan described substrate parallel or antiparallelly simultaneously along assigned direction (" scanning " direction) with this direction by radiation beam.Can also described pattern be formed device from described pattern transfer on the described substrate by described pattern is impressed (imprinting) to described substrate.
For monitoring photoetching technology, need the parameter of measured pattern substrate, for example the aliasing error between the continuous layer in being formed on described substrate or above the described substrate.The existing multiple technologies that are used for measuring the microstructure that forms in photoetching process comprise and use scanning electron microscope and multiple specific purpose tool.A kind of form of special-purpose testing tool is a scatterometer, in described scatterometer, radiation beam is directed on the lip-deep target of substrate and measures the character of scattered-out beam or reflecting bundle.By relatively reflected by substrate or scattering before and after the character of described bundle, can determine the character of substrate.For example, can finish with the data in being stored in the known measurement storehouse relevant by comparing reflecting bundle with known substrate character.The scatterometer of known two kinds of main types.The spectral dispersion instrument is directed to the broadband radiation bundle on the substrate and measures the spectrum (intensity is as the function of wavelength) of the radiation that is dispersed into specific narrow angular region.Angle decomposition scatter use monochromatic beam and measurement are as the intensity of the scattered radiation of angle function.
Be used for the measuring tool of monitoring photoetching technology, and, typically be set to measuring accuracy and may depend on the mode of measuring orientation especially such as critical dimensions such as scanning electron microscope and scatterometer (CD) measuring tool.For example, the magnification in level and vertical direction can have side-play amount.In addition, can influence measurement result with the deviation of the ideal form that is used to shine the radiation beam that measures target and the deviation that measures the incident angle of the radiation beam on the target.Significantly, such system measurements error should minimize.Therefore, strictly regulating of this system measurements error is set.For the minimization system error in measurement, need the calibration measurement instrument.Therefore, the substrate with known measurement target can be checked on a plurality of different orientations by measuring tool, so that determine to depend on the side-play amount of orientation.Yet, for example, set up many CD measuring tools, so that can not on different orientations, load or measure substrate owing to there is the groove detent mechanism.
Summary of the invention
Aim to provide a kind of system, can be easier to compensate the side-play amount that in measuring tool, depends on orientation by it.
According to embodiments of the invention, the method that provides a kind of formation to be applicable to the substrate of calibration measurement instrument, described method comprises: radiation sensitive material layer is provided to substrate surface; Use pattern to form device first radiation beam is carried out patterning, described pattern forms device the calibrating pattern that comprises the first cover pattern characteristics and the second cover pattern characteristics is provided; First radiation beam of patterning projected on the radiation-sensitive materials so that forms first collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have second collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern; Rotate substrate around the axle that is basically perpendicular to substrate surface at a predetermined angle with respect to optical projection system; Use pattern formation device carries out patterning to second radiation beam and it is projected on radiosensitive material, so that forms the 3rd collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have the 4th collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern; Wherein said predetermined angular makes the orientation of pattern characteristics of prolongation of second collimating marks be arranged essentially parallel to the orientation of pattern characteristics of the prolongation of the 3rd collimating marks.
According to further embodiment of the present invention, described calibrating pattern further comprises the 3rd cover pattern characteristics, and is formed the 5th collimating marks of the pattern characteristics with a cover prolongation by the radiation in first radiation beam of the 3rd cover pattern characteristics institute patterning of calibrating pattern; Wherein this method further comprises:
Further rotate substrate with respect to optical projection system around described axle with second predetermined angular; And
Use pattern to form device the 3rd radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 6th collimating marks of pattern characteristics by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern with a cover prolongation; And
Described second predetermined angular makes the orientation of pattern characteristics of prolongation of the 5th collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 6th collimating marks.
According to further embodiment of the present invention, in first, second and the 5th collimating marks, it is substantially parallel not having the orientation of pattern characteristics of the prolongation of two collimating marks.
According to further embodiment of the present invention, when second radiation beam is patterned and is projected on the radiation-sensitive materials, form the collimating marks of pattern characteristics with prolongation by the radiation of the 3rd cover pattern characteristics institute patterning of calibrating pattern, and when the 3rd radiation beam is patterned and is projected on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation by the radiation of the second and the 3rd cover pattern characteristics institute patterning of calibrating pattern.
According to further embodiment of the present invention, described calibrating pattern further comprises the quadruplet pattern characteristics, and forms the 7th collimating marks with pattern characteristics that a cover prolongs by the radiation in first radiation beam of the quadruplet pattern characteristics institute patterning of calibrating pattern;
Wherein this method comprises that further centering on described axle with respect to optical projection system further rotates substrate with the 3rd predetermined angular; And
Use described pattern to form device the 4th radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 8th collimating marks of pattern characteristics by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern with a cover prolongation; And
Described the 3rd predetermined angular makes the orientation of pattern characteristics of prolongation of the 7th collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 8th collimating marks.
According to further embodiment of the present invention, at first, second, in the 5th and the 7th collimating marks, it is substantially parallel not having the orientation of pattern characteristics of the prolongation of two collimating marks.
According to further embodiment of the present invention, when second radiation beam is patterned and is projected on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation by the radiation of the third and fourth cover pattern characteristics institute patterning of calibrating pattern, and when third and fourth radiation beam is patterned and is projected to respectively on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation respectively by the radiation of second, third and the 4th pattern characteristics institute patterning of calibrating pattern.
According to further embodiment of the present invention, further comprise:
Be under the situation of identical orientation with respect to described optical projection system at substrate, when each radiation beam is patterned and is projected on the radiation-sensitive materials, use pattern to form device at least one extra radiation beam is carried out patterning, and described extra radiation beam projected on the radiation-sensitive materials, so that each extra radiation beam forms collimating marks, this collimating marks of being formed by described each extra radiation beam is corresponding to being formed by described each radiation beam that is projected to the patterning on the radiation-sensitive materials, on the described orientation of substrate, but the collimating marks at the diverse location place on substrate.
According to further embodiment of the present invention, further comprise:
Be under the situation of identical orientation with respect to described optical projection system at substrate, when each radiation beam is patterned and is projected on the radiation-sensitive materials, use pattern to form device at least one extra radiation beam is carried out patterning, and described extra radiation beam projected on the radiation-sensitive materials, so that each extra radiation beam forms collimating marks, this collimating marks of being formed by described each extra radiation beam is corresponding to being formed by described each radiation beam that is projected to the patterning on the radiation-sensitive materials, on the described orientation of substrate, but the collimating marks at the diverse location place on substrate.
According to further embodiment of the present invention, comprise that further the pattern to being formed on substrate by the selectivity exposure of radiation-sensitive materials develops.
According to further embodiment of the present invention, further comprise etched substrate.
According to further embodiment of the present invention, the pattern characteristics of the prolongation of collimating marks is the striped that is used to form grating.
According to further embodiment of the present invention, the pattern characteristics of each prolongation comprises the array of structure.
According to further embodiment of the present invention, a kind of method of calibration measurement instrument is also proposed, comprise a plurality of collimating marks that check is formed on substrate by following method, this method comprises:
Radiation sensitive material layer is provided to the surface of substrate;
Use pattern to form device first radiation beam is carried out patterning, described pattern forms device calibrating pattern is provided, and described calibrating pattern comprises the first cover pattern characteristics and the second cover pattern characteristics;
First radiation beam of patterning is projected on the radiation-sensitive materials, so that forms first collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have second collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Rotate substrate with respect to optical projection system at a predetermined angle around the axle that is substantially perpendicular to substrate surface;
Use pattern to form device second radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 3rd collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have the 4th collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Wherein said predetermined angular makes the orientation of pattern characteristics of prolongation of second collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 3rd collimating marks.
According to further embodiment of the present invention, check difference between the result that a plurality of collimating marks obtain to be used to the side-play amount of the orientation of calibration measurement instrument, described a plurality of collimating marks is formed by the radiation of the identical cover pattern characteristics institute patterning of calibrating pattern, but the described identical cover pattern characteristics of calibrating pattern has the pattern characteristics of the prolongation that is not parallel to each other.
According to further embodiment of the present invention, check difference between the result of three or more collimating marks to be used at the side-play amount of the shape of the radiation beam of the collimating marks that is used for being radiated at measuring tool and be used for being radiated in the side-play amount of incident angle of radiation beam of collimating marks of measuring tool at least one come the calibration measurement instrument, described three or more collimating marks are formed by the radiation of the identical cover pattern characteristics institute patterning of calibrating pattern, but the described identical cover pattern characteristics of calibrating pattern has the pattern characteristics of the prolongation that is not parallel to each other.
According to further embodiment of the present invention, check difference between the resulting result of collimating marks of a plurality of pattern characteristics with the prolongation that is parallel to each other substantially to be used to compensate the radiation intensity variations of the different radiation beam that is used to form described collimating marks.
According to further embodiment of the present invention, check difference between the resulting result of collimating marks of a plurality of pattern characteristics with the prolongation that is parallel to each other substantially to be used to compensate the radiation intensity variations of the different radiation beam that is used to form described collimating marks.
The embodiment of the invention also provides the method for the calibration measurement instrument of the substrate that a kind of substrate of making according to said method and a kind of use form by said method.
Description of drawings
, embodiments of the invention are described with reference to accompanying schematic figure only by example at this, in accompanying schematic figure, identical Reference numeral is represented identical part, and wherein:
Fig. 1 a is the lithographic equipment according to inventive embodiment;
Fig. 1 b be according to the lithographic cell of inventive embodiment or bunch;
Fig. 2 describes first scatterometer;
Fig. 3 describes second scatterometer;
Fig. 4 is according to an embodiment of the invention, is used to form the technology of the substrate that is used for the calibration measurement instrument;
Fig. 5 a and 5b describe the structure of collimating marks on the substrate;
Fig. 5 c is described in the variation of the collimating marks layout of describing among Fig. 5 b;
Fig. 6 describes and can be used on the selectable collimating marks of the cover of one in the inventive embodiments;
Fig. 7 has described another variation that is used in the described cover collimating marks in the inventive embodiments; And
Fig. 8 has described the possible layout of collimating marks on the substrate.
Embodiment
Fig. 1 a has schematically described lithographic equipment LA.Described device comprises: irradiation system (irradiator) IL, described irradiator IL are provided for regulating radiation beam B (for example ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation); Supporting construction (for example mask platform) MT, described supporting construction MT make up to be used to support pattern formation device (for example mask) MA and to be connected to configuration and are used for accurately locating the first steady arm PM that pattern forms device according to the parameter of determining; Substrate support (for example wafer station) WT, described substrate support WT configuration is used to keep substrate (for example being coated with the wafer of resist) W and is connected to the second steady arm PW that configuration is used for the definite accurate position substrate of parameter of basis; And optical projection system (for example refraction type projection lens system) PL, described optical projection system PL configuration is used for giving the target portion C of the graphic pattern projection of radiation beam B to substrate W (for example comprising one or more tube cores) with formed device MA by pattern.
Irradiation system can comprise polytype optics, and for example optics or its any combination of refraction type, transmission-type, magnetic, electromagnetic type, electrostatic or other type are used for guiding, shaping or control radiation.
Supporting construction MT supports pattern and forms device MA, promptly bears the weight that pattern forms device MA.It keeps pattern to form device MA with the orientation that depends on pattern formation device, the design of lithographic equipment and the mode of other condition (for example whether pattern formation device is maintained in the vacuum environment).Supporting construction MT can use machinery, vacuum, static or other clamping technology keeps pattern to form device.Supporting construction MT can be framework or platform, for example its can be as required fix or movably.Supporting construction MT can guarantee that pattern forms device MA and is in (for example with respect to optical projection system) on the desired position.Any term used herein " mask " or " mask " can be thought and more upper term " pattern formation device " synonym.
Term used herein " pattern formation device " should be interpreted as being used for giving radiation beam on its xsect so that form any device of pattern on the target part at substrate with pattern widely.Should be noted that the pattern that is endowed radiation beam may not be exactly corresponding to needed pattern (if for example pattern comprises phase shift feature or so-called supplemental characteristic) in the substrate target part.Usually, be endowed the pattern of radiation beam corresponding to the specific functional layer in the device that in the target part, forms, for example integrated circuit.
It can be transmission-type or reflective that pattern forms device MA.The example that pattern forms device comprises mask, array of programmable mirrors and liquid crystal display able to programme (LCD) panel.Mask is known in photoetching, and comprises such as mask-type and multiple hybrid mask types such as binary mask type, alternation type phase shifting mask type and attenuation type phase shifting mask types.An example of array of programmable mirrors uses the matrix arrangements of small reflector, and each described small reflector can tilt separately so that reflect the radiation beam of incident along different directions.The catoptron that tilts gives pattern by catoptron matrix reflection radiation beam.
Term used herein " optical projection system " should be interpreted as comprising the optical projection system of any kind widely, comprise refraction type, reflective, reflected refraction formula, magnetic, electromagnetic type and electrostatic optical system or its combination in any, as being fit to employed exposing radiation or other factors (for example use of the use of immersion liquid or vacuum).Any term used herein " projecting lens " can be thought and more upper term " optical projection system " synonym.
As described herein, device is transmission-type (for example using transmissive mask).Selectively, device can be reflection-type (for example uses array of programmable mirrors type above-mentioned or use reflection type mask).
Lithographic equipment can be the type with two (two platforms) or more substrate table (and/or two or more mask platform).In " many " machine like this, can use additional platform concurrently, or can on one or more platforms, carry out preliminary step and simultaneously one or more other be used for exposure.
Lithographic equipment can also be following type: wherein at least a portion substrate can be covered by having relative high refractive index liquid (for example water), so that fill the space between optical projection system and the substrate.Immersion liquid can also be applied to other space in the lithographic equipment, for example forms between device (for example mask) MA and the optical projection system at pattern.The numerical aperture that immersion technique is used to increase optical projection system is being known in the art.Term used herein " submergence " does not mean that structure (for example substrate) must be immersed in the liquid, but only means at exposure period interstitial fluid body and be positioned between optical projection system and the substrate.
With reference to figure 1a, irradiator IL receives the radiation beam from radiation source S O.For example when this source was excimer laser, described source can be the entity that separates with lithographic equipment.Like this, described source can not be considered to the ingredient of lithographic equipment, and under the help of the light beam transfer system BD that comprises for example suitable directing mirror and/or beam expander, radiation beam is delivered to irradiator IL from source SO.In other cases, for example when described source was mercury lamp, described source can be the ingredient of lithographic equipment.Source SO and irradiator IL (if necessary with beam delivery system BD) can be described as radiating system.
Irradiator IL can comprise the adjuster AD of the angle intensity distributions that is used to adjust radiation beam.Usually, at least in the pupil plane of irradiator the outside and/or the inner radial scope (being expressed as σ-outside and σ-inside usually respectively) of intensity distributions can be adjusted.In addition, irradiator IL can comprise multiple other parts, for example integrator IN and condenser CO.Irradiator can be used for regulating radiation beam to have needed homogeneity and intensity distributions on its xsect.
Radiation beam B incides pattern and forms on the device (for example mask MA), and described pattern forms device and is maintained on the supporting construction (for example mask table MT), and forms device by pattern and carry out patterning.After passing pattern formation device (for example mask) MA, radiation beam B is by optical projection system PL, and described optical projection system PL focuses on light beam on the target portion C of substrate W.Under the help of the second steady arm PW and alignment sensor IF (for example interferometric device, linear encoder, 2 dimension scrambler or capacitive transducers), substrate table WT can accurately move, for example for the different target portion C in location in the path of radiation beam B.Similarly, for example after the machinery from the mask storehouse obtains, or in scan period, the first steady arm PM and another alignment sensor (description that it is not clear and definite in Fig. 1 a) can be used for accurately locating pattern with respect to the path of radiation beam B and form device (for example mask) MA.Usually, can realize the motion of supporting construction (for example mask platform) MT under the help of long stroke module (coarse positioning) and short stroke module (accurately location), described long stroke module and short stroke module form the part of the first steady arm PM.Similarly, can use long stroke module and short stroke module to realize the motion of substrate support (for example substrate table) WT, described long stroke module and short stroke module form the part of the second steady arm PW.Under the situation of stepper (relative with scanner), supporting construction (for example mask platform) MT can only be connected to short-stroke actuator, or fixing.Can use mask alignment mark M1, M2 and substrate alignment mark P1, P2 to aim at supporting construction (for example mask) MA and substrate W.Though the substrate alignment mark that illustrates is occupied special target part, they can be arranged in the space between the target part (these are called as the line alignment mark).Similarly, form under the situation about providing on device (for example mask) MA more than a tube core at pattern, mask alignment mark can be between tube core.
Described equipment can be used among in the following modes at least one:
1. in step mode, when the whole pattern that is endowed radiation beam was once projected on the target portion C, supporting construction (for example mask platform) MT and substrate support (for example substrate table) WT kept substantially static (being the single static exposure).Substrate support (for example substrate table) WT moves on X and/or Y direction so that can be to different target portion C exposures then.In step mode, the full-size of exposure field is limited in the size of the target portion C of imaging in the single static exposure.
2. in scan pattern, when the graphic pattern projection that will be endowed radiation beam is on the target portion C, synchronous scanning supporting construction (for example mask platform) MT and substrate support (for example substrate table) WT (being single dynamic exposure).Substrate support (for example substrate table) WT can be by amplification (dwindling) rate and the image inversion characteristics determined of optical projection system PL with respect to speed and the direction of supporting construction (for example mask platform) MT.In scan pattern, the full-size of exposure field limits the width (on non-direction of scanning) of the target part in the single dynamic exposure, and the length of scanning motion is determined the height (on the direction of scanning) of target part.
3. in another pattern, supporting construction (for example mask platform) MT that is used to keep pattern able to programme to form device keeps static substantially, and moves or scan substrate support (for example substrate table) WT when the graphic pattern projection that will be endowed radiation beam is on the target portion C.In this pattern, use impulse radiation source usually and upgrading pattern formation device able to programme after the motion of each substrate support (for example substrate table) WT or between the continuous radiation pulse in scan period as required.The pattern of operation can be easy to be applied to use on the maskless lithography of pattern formation device able to programme, for example the array of programmable mirrors of aforesaid type.
Can also adopt above-mentioned use pattern combination and/or distortion or adopt diverse use pattern.
Shown in Fig. 1 b, lithographic equipment LA forms the part of lithographic cell LC, also be called sometimes lithographic cell (lithocell) or bunch, it also can comprise and is used for carrying out on substrate before the exposure and the device of the processing after exposing.Normally these comprise the spinner SC that is used to deposit resist layer, developer DE, chill plate CH and the bake plate BK of the resist that exposed of being used to develop.Substrate conveying device or mechanical arm RO pick up substrate from input/output end port I/O1, I/O2, move them between different treatment facilities, and are assigned to the loading bay LB of lithographic equipment afterwards.These devices that often are collectively referred to as track are under the control of the track control module TCU that is in management control system SCS control itself, also via photoetching control module LACU control lithographic equipment.Like this, can be with different equipment operations so that output and treatment effeciency maximization.
For the substrate by lithographic equipment exposure correctly and is as one man exposed, need check exposure substrate for example to measure feature in the aliasing error between the successive layers, between the live width, between the critical dimension (CD).Should be appreciated that and to measure extra feature.If the error of detecting, if to such an extent as to especially the check can finish fast enough at short notice with other a collection of substrate still the exposure, then can adjust the exposure of ensuing substrate.The substrate that has exposed also can be peelled off and processing again---to be avoided exposing on known defective substrate to improve output---or abandoning---thus.Some targets of having only substrate partly are under the defective situation, and exposure can only be carried out on those intact target parts.
Service test equipment is determined the character of substrate, and more specifically, determine different substrates or same substrate different layers the variation of character from one deck to another layer how.Inspection machine can be integrated among lithographic equipment LA or the lithographic cell LC, maybe can be independent device.In order to measure the most fast, need inspection machine after exposure, to measure the character of the resist layer that has exposed at once.Yet the latent image in the resist has low-down contrast---only having very little refractive index difference between by the resist of radiant exposure part and unexposed resist part---and not every inspection machine all has enough susceptibilitys latent image is done effective measurement.Therefore can measure afterwards by the baking procedure (PEB) after exposure, the baking procedure after the described exposure is normally at the first step that carries out on the substrate that has exposed and increased the exposed portion of resist and the contrast between the unexposed portion.In this stage, the image in the resist can be half potential.But the resist image---exposure or the unexposed portion of resist are removed at that point---that has been developed of energy measurement or measure afterwards also in pattern transfer steps (for example etching).The back is a kind of may limit the possibility that defective substrate is processed again, but still can provide useful information.
Fig. 2 has described the scatterometer SM1 that can be used in the embodiment of the invention.It comprises broadband (white light) the tomographic projection instrument 2 of tomographic projection to the substrate 6.The radiation that is reflected is passed to spectrometer detector 4, and it measures the spectrum 10 (intensity is as the function of wavelength) of direct reflection radiation.From these data, the structure or the profile that are used to generate the spectrum that is detected can pass through processing unit PU, for example by rigorous couple-wave analysis and non-linear regression or by relatively rebuilding with the simulated spectra storehouse shown in Fig. 2 bottom.Usually, for described reconstruction, the common version of structure is known and some parameters are supposed according to the knowledge of the process that described structure adopted of making, only stays some parameters of structure to determine according to scatterometer data.Such scatterometer can be set to normal incidence scatterometer or oblique incidence scatterometer.
Fig. 3 illustrates another scatterometer SM2 that can be used in the embodiment of the invention.In this device, use lens combination 12 to focus on by radiation source 2 radiation emitted, described radiation is by interference filter 13 and polarizer 17, be focused on the substrate W by 16 reflections of partial reflection surface and via micro objective 15, it has high-NA (NA), and preferably at least 0.9 and more preferably at least 0.95.Immersion scatterometer even can have numerical aperture and surpass 1 lens.Institute's radiation reflected transmission arrives in the detector 18 so that detect scattering spectrum by partial reflection surface 16 then.Detecting device can be located on 11 positions, back projection pupil plane at focal length F place of lens combination 15.Yet alternatively, pupil plane can be with the reimaging of auxiliary optical component (not shown) to detecting device.Described pupil plane is azimuthal plane that the radial position of radiation limits incident angle and the qualification radiation of position, angle.Detector preferably two-dimensional detector so that can measure the two dimension angular scattering spectrum of substrate target.For example detector 18 can be charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) sensor array, and the integral time that can use 40 milliseconds of for example every frames.
For example be usually used in measuring the intensity of incident radiation with reference to Shu Jing.For do above-mentioned these, when radiation beam incides on the beam separator 16, its part as with reference to bundle transmitted beam separation vessel towards reference mirror 14 transmissions.Be projected on the different piece of equality detector 18 with reference to bundle then.
One group of interference filter 13 can for example about 405-790nm or even lower scope (for example about 200-300nm) in select interested wavelength.Interference filter can be adjustable rather than comprise a different set of optical filter.Grating can be used to replace interference filter.
Detecting device 18 can be measured the light intensity of the scattered light of single wavelength (or narrow wavelength coverage), and described light intensity lays respectively on a plurality of wavelength or covers whole wavelength coverage.And detecting device can be measured the light intensity of transverse magnetic polarisation and transverse electric polarisation and/or the phase differential between transverse magnetic polarisation and the transverse electric polarisation respectively.
Can use wideband light source (light frequency or the wavelength that promptly have wide region---and consequent colour), it provides big etendue, allows multi-wavelength's mixing.Preferably each has the bandwidth of δ λ and the spacing of at least 2 δ λ (being the twice bandwidth) to a plurality of wavelength in the broadband.A plurality of radiation " source " can be to use the different piece of the expansion radiation source of fibre bundle separation.Like this, locate to take measurement of an angle concurrently the decomposition scattering spectrum the multi-wavelength.Can measure 3 dimension spectrum (wavelength and two different angles), it comprises the information more than 2 dimension spectrum.This allows more information measured, and it increases the robustness that measures processing.At EP1,628, among the 164A more detailed description above-mentioned situation, by reference its full content is incorporated herein thus.
Target on the substrate W can be a grating, and it is printed so that after development, and striped is formed by solid-state resist line.Selectively, described striped can be etched in the substrate.This pattern is to the aberration sensitivity in the lithographic projection apparatus (especially optical projection system PL), and the existence of irradiation symmetry and this aberration will be embodied in the variation of printed grating.Correspondingly, use the scatterometer data of printed grating to rebuild grating.Can be input in the reconstruction process such as line width and grating parameter such as linear, be undertaken by the knowledge that processing unit PU handles according to print steps and/or other scatterometer.
Embodiments of the invention provide the method for making substrate, and this substrate specifically is provided for the calibration of measuring tool, is used in particular for the compensation by the systematic error that is caused by the variation that depends on orientation in measuring tool.And, substrate is set so that under situation about need not, in measuring the unit, can carry out calibration testing with different directions loading substrate in the measurement unit.
Substrate with a plurality of marks can be used for the calibration measurement instrument and compensates the variation that depends on orientation, but described mark is identical with different orientation setting marks.Yet, in practice can not be definitely identical again with different orientation formation mark and mark.This is to form mark because if use different pattern to form the different piece that device or single pattern form device, then forms between the device or pattern forms variation between the different piece of device and will cause variation between the mark that forms on the substrate at different patterns.Selectively, if form device (or its part) by identical pattern but form mark (for example using different exposures), will cause variation between the mark in the variation of the treatment conditions of different time (for example the variation by the radiation intensity between the difference exposure causes) so at different time.Any variation of orientation between mark, that remove them means that measuring tool can not be by calibrating according to the measurement of the check of mark directly relatively being done by the measuring tool measurement with different orientation.
Fig. 4 schematically describes the technology that is used to form the substrate that is used for the calibration measurement instrument according to of the present invention.In operation 410, radiation-sensitive materials (for example being resist) is provided to substrate surface.In operation 420, described substrate is loaded in the lithographic equipment and at substrate described in the operation 430 and is formed the patterned beam of radiation exposure of device institute by the pattern with calibrating pattern.As described in more detail below, calibrating pattern comprises many cover pattern characteristics.When calibrating pattern was projected on the substrate, the every cover pattern characteristics in the calibrating pattern formed corresponding collimating marks on substrate.Collimating marks comprises the feature of a plurality of prolongations and for example can form one or more gratings together.Therefore, the feature of described prolongation can be the striped of grating.Selectively, for example the pattern characteristics of described each prolongation can comprise the array of structure, for example the contact hole array.Setting is included in the many covers pattern characteristics in the calibrating pattern so that the pattern characteristics of the prolongation of each collimating marks is positioned at different directions.
Substrate forms in the operation 440 of technology, and substrate is rotated in lithographic equipment and/or is removed from lithographic equipment and is re-loaded in the lithographic equipment with different orientation.As a result, operation 440 provides radiation-sensitive materials by rotating substrate around the axle perpendicular to substrate surface with predetermined angle with respect to optical projection system on described substrate.In operation 450, calibrating pattern is exposed on substrate once more, and other a plurality of collimating marks are provided, described collimating marks each corresponding to one in a plurality of pattern characteristics in calibrating pattern.Preferably, more than second contiguous more than first collimating marks of collimating marks forms but fully separation, do not have to disturb between the structure of continuous a plurality of collimating marks.
In case the pattern that is hopeful is exposed on substrate, then substrate can be handled in a usual manner.For example, radiation-sensitive materials can develop in operation 470, if measuring tool especially to be calibrated wants to be used to check the mark on the substrate after radiation-sensitive materials develops.Optionally, substrate can be etched in operation 480 in a usual manner so that more durable calibration substrate is provided.
Fig. 5 a and 5b schematically describe the structure of collimating marks on the substrate.Especially, Fig. 5 a has described calibrating pattern and has been oriented in the mark that is formed on after being exposed on the substrate on the substrate with first, and Fig. 5 b has described the same area of calibrating pattern with the substrate of second orientation after by exposure for the second time.
Fig. 5 a at length illustrates first and second collimating marks 21,22 that are formed on the first and second cover pattern characteristics on the substrate, that correspond respectively to calibrating pattern.As shown in the figure, each in first and second collimating marks 21,22 comprises pattern characteristics 21a, the 22a of a plurality of prolongations.And the orientation of the pattern characteristics 21a of the prolongation of first collimating marks is different from the orientation of pattern characteristics 22a of the prolongation of second collimating marks 22.Fig. 5 a comprises description point 23.Comprise that described description point 23 only is used to illustrate the orientation of first and second collimating marks 21,22.
Fig. 5 b has described the zone of substrate, and first and second collimating marks 21,22 are forming on the zone of exposure back at described substrate on the substrate with respect to optical projection system rotation and calibrating pattern once more at substrate.Shown in description point 23, first and second collimating marks 21,22 are rotated with respect to the position shown in Fig. 5 a.In addition, shown in description point 26, when their initial formation, third and fourth collimating marks 24,25 forms with the orientation corresponding to first and second collimating marks 21,22.Third and fourth collimating marks 24,25 is formed by the first and second cover pattern characteristics of calibrating pattern respectively.Therefore, the first and the 3rd collimating marks 21,24 is formed by the same set of pattern characteristics of calibrating pattern, but because the substrate rotation between exposure, the orientation of the pattern characteristics 24a of the prolongation of the 3rd collimating marks is different from the orientation of pattern characteristics 21a of the prolongation of first collimating marks.Equally, though the second and the 4th collimating marks 22,25 is formed by the same set of pattern characteristics of calibrating pattern, second is different with the orientation of the pattern characteristics of the prolongation of the 4th collimating marks 22,25.
The rotation degree of substrate between first and second exposures of the calibrating pattern on the careful selection substrate.In Fig. 5 a and the described layout of 5b, especially be chosen in the substrate rotation between the exposure, so that the orientation of the pattern characteristics 22a of the prolongation of second collimating marks 22 is arranged essentially parallel to the orientation of pattern characteristics 24a of the prolongation of the 3rd collimating marks 24.Equally, in Fig. 5 a and the described layout of 5b, the orientation of the pattern characteristics 21a of the prolongation of first collimating marks 21 is basically parallel to the orientation of pattern characteristics 25a of the prolongation of the 4th collimating marks 25.
The collimating marks that forms in the above described manner on the substrate provides the useful substrate that is used for the calibration measurement instrument.Especially, the difference between the result of check collimating marks 21,22,24,25 is produced by following three factors: (i) difference between the cover of first and second in the calibrating pattern pattern characteristics and/or the difference that caused by the optical projection system of lithographic equipment; Difference between the radiation light intensity (ii) double exposes; And (iii) by the caused difference of the systematic error that depends on orientation of measuring tool.Should be appreciated that, difference between first and second collimating marks, 21,22 results and the difference between third and fourth collimating marks 24,25 partly be factor (i) and the part be factor (iii).By contrast, between first collimating marks 21 and the 3rd collimating marks 24 between result's the difference and second collimating marks 22 and the 4th collimating marks 25 result's difference part (ii) cause by factor and part is (iii) caused by factor.Finally, the difference of the assay between the difference of the assay between first collimating marks 21 and the 4th collimating marks 25 and second collimating marks 22 and the 3rd collimating marks 24 part is caused by factor (i) and is partly (ii) caused by factor.Subsequently, by comparing the result's who checks by the measuring tool of all four collimating marks 21,22,24,25 difference, can eliminate factor (i) and influence (ii), the result only is factor influence (iii), i.e. the effect of the systematic error that depends on orientation of measuring tool.Therefore, can use the assay calibration measurement instrument of four collimating marks.
Though shown in Fig. 5 a and 5b, calibrating pattern can simply comprise the first and second cover pattern characteristics that are used to form two collimating marks, described two collimating marks have separately a cover and are orientated the pattern characteristics of different prolongations each other, but also can use other calibrating patterns.For example, shown in Fig. 5 c, except being used in each exposure, forming the first and second cover pattern characteristics of collimating marks separately, calibrating pattern can comprise the third and fourth cover pattern characteristics, and the described third and fourth cover pattern characteristics generates two extra collimating marks that are similar to first and second collimating marks.Therefore, shown in Fig. 5 c, the every cover collimating marks 31,32,33,34 corresponding to single exposure comprises two pairs of collimating marks with pattern characteristics of prolongation parallel to each other.This may benefit, because at first it provides the excessive data that can improve the calibration of measuring tool, and secondly because measuring tool can be provided for checking the combination of features with described structure.Therefore, be used for determining that " identification " measures target and locatees verification unit with the system in the measuring tool of check measurement target at measuring tool, can give an order by the single pattern that is used for all collimating marks.In the time must using different identification and positioning instruction for each collimating marks, it has eliminated caused potential side-play amount.
And then, shown in Fig. 5 c, can use exposure more than twice.Therefore, shown in Fig. 5 c, can be repeated four times in the operation 440 and 450 of the described substrate of Fig. 4 formation method, so that provide quadruplet collimating marks 31,32,33,34 with each different orientations.But also can provide extra data so that improve the precision of calibration.
In addition, though as described at Fig. 5 a, 5b and 5c, the pattern characteristics of the prolongation of some collimating marks can need not to be this situation perpendicular to the orientation of the pattern characteristics of the prolongation of remaining collimating marks.For example, as described in Figure 6, calibrating pattern can comprise three cover pattern characteristics, and described pattern characteristics is set to forming collimating marks separately on the substrate so that the angle between the orientation at the pattern characteristics of the prolongation of any two collimating marks is about 120 °.Therefore, can form for example described cover collimating marks 41 of Fig. 6.In such layout, the operation 440 and 450 of substrate formation method can repeat 3 times altogether as described in Figure 4, and between each exposure, substrate rotates about 120 °, so that three exposures provide Fig. 6 described three cover collimating marks 41,42,43 altogether.Should be appreciated that, do like this setting is formed on collimating marks on the substrate, so that the pattern characteristics of the prolongation that is formed in the pattern characteristics by the cover of given exposure from calibrating pattern will be basically parallel to the pattern characteristics of the prolongation that is formed by the another set of pattern characteristics in the calibrating pattern by one other exposure, so analogize.Therefore, still can eliminate in the calibrating pattern influence of different radiation light intensity in the influence of using different cover pattern characteristics and different the exposure, so that the influence of the variation that depends on orientation of definite measuring tool.
Fig. 7 has described the preferred arrangements of a few cover collimating marks.Every as shown cover collimating marks 51,52,53,54 comprises eight collimating marks, and the corresponding pattern characteristics of eight covers forms simultaneously in described eight collimating marks use calibrating pattern.In every cover collimating marks, four pairs of collimating marks are arranged, every pair of collimating marks is set so that the pattern characteristics of their prolongations separately is substantially parallel.First and second pairs of collimating marks are set, so that the pattern characteristics of their prolongation is perpendicular to one another.Third and fourth pair of collimating marks is set, so that the pattern characteristics of their prolongations separately is perpendicular to one another and each is about 45 ° to one of them the angle of prolongation pattern characteristics of first and second pairs of collimating marks.In addition, as shown in Figure 7, shown in description point 55,56,57,58 separately, between the structure of every cover collimating marks 51,52,53,54, substrate rotates about 45 °.
As previously mentioned, can be from consider measuring tool difference between the result of check collimating marks gained eliminate the influence of difference between a few cover pattern characteristics in the influence of difference of radiation light intensity of continuous exposure and the calibrating pattern.Therefore can determine that measuring tool depends on the influence of the variation of orientation.But, should be appreciated that, use a few as described in Figure 7 cover calibration targets can obtain other information.Therefore, can partly be aligned in any heterogeneity of the shape that is used for shining the light beam that measures target in the measuring tool and/or radiation beam at least in the defect influence that measures incident angle on the target.
As mentioned above, collimating marks preferably forms on substrate all located adjacent one anotherly.This can be with any minimize variations between the collimating marks that is caused by the cd variations on the substrate.Yet as shown in Figure 8, the substrate 60 that is used for the calibration measurement instrument can be set to have many covers 61,62,63,64 collimating marks of the zones of different that is arranged on substrate, and wherein every cover collimating marks is corresponding to the above-mentioned collimating marks of any cover.Like this, first cover, 61 collimating marks can be formed and next can be formed second by second multiexposure, multiple exposure by first multiexposure, multiple exposure overlaps 62 calibration targets, by that analogy.Selectively, the sub-cover of collimating marks in the collimating marks of every cover 61,62,63,64 can be formed simultaneously by each exposure, has reduced the time that forms substrate.
Should be appreciated that, can use the distortion of above-mentioned a few cover collimating marks.Especially, the operation 440 and 450 of the substrate formation method of Fig. 4 description can be repeated the number of times different with above-mentioned number of times.Selectively or additionally, calibrating pattern can comprise the many covers pattern characteristics that is different from above-mentioned number, and the angle between the orientation of the pattern characteristics of the prolongation of the collimating marks that forms from single exposure can be with above-mentioned discussion different, and/or the anglec of rotation of substrate between the continuous exposure can be with above-mentioned discussion different.
Although can make concrete reference in this article, described lithographic equipment is used to make IC, but be to be understood that lithographic equipment described here can have other application, for example, manufacturing of the guiding of integrated optics system, magnetic domain memory and check pattern, flat-panel monitor, LCD, thin-film head etc.It should be appreciated to those skilled in the art that in the situation of this alternate application, use therein any term " wafer " or " tube core " can be thought respectively and more upper term " substrate " or " target part " synonym.Here the substrate of indication can be handled before or after exposure, for example in track (a kind ofly typically resist layer is coated onto on the substrate, and the instrument that the resist that has exposed is developed), measuring tool and/or the instruments of inspection.Under applicable situation, described disclosure can be applied in this and other substrate processing instruments.In addition, more than described substrate can be handled once, for example, make described term used herein " substrate " also can represent to have comprised the substrate of a plurality of processing layers for producing multilayer IC.
Although below made concrete reference, in the situation of optical lithography, use embodiments of the invention, it should be understood that the present invention can be used for other and use, for example imprint lithography, and the situation of needing only allows, and is not limited to optical lithography.In imprint lithography, the topology that pattern forms in the device defines the pattern that produces on substrate.The topology that described pattern can be formed device is printed onto in the resist layer that offers described substrate, makes up described resist is solidified by applying electromagnetic radiation, heat, pressure or its thereon.After described resist solidified, described pattern formed device and removes from described resist, and stays pattern in resist.Should be appreciated that the formed substrate of the method according to this invention can be used to calibrate the substrate that is used to check by the processing of imprint lithography instrument.
Term used herein " radiation " and " bundle " comprise the electromagnetic radiation of all types, comprise: UV radiation (for example have about 365,355,248,193,157 or the wavelength of 126nm) and extreme ultraviolet radiation (for example having the wavelength in the 5-20nm scope), and the particle beams, for example ion beam or electron beam.
Under the situation that context allows, any in various types of opticses or their combination can be represented in described term " lens ", comprises refraction type, reflective, magnetic, electromagnetic type and electrostatic optics.
Although below described certain embodiments of the present invention, it should be understood that the present invention can be to realize with above-mentioned different form.For example, the present invention can take to comprise the form of the computer program of one or more sequence of machine-readable instruction that is used to describe above-mentioned disclosed method, perhaps take to have the form of the data storage medium (for example, semiconductor memory, disk or CD) of this computer program of storage therein.
Above description is illustrative, rather than restrictive.Therefore, it will be understood by those of skill in the art that and under the condition of the protection domain that does not deviate from appended claim, can make amendment the present invention.
Claims (18)
1. a formation is applicable to the method for the substrate of calibration measurement instrument, and described method comprises:
Radiation sensitive material layer is provided to substrate surface;
Use pattern to form device first radiation beam is carried out patterning, described pattern forms device the calibrating pattern that comprises the first cover pattern characteristics and the second cover pattern characteristics is provided;
First radiation beam of patterning is projected on the radiation-sensitive materials, so that forms first collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have second collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Rotate substrate around the axle that is basically perpendicular to substrate surface at a predetermined angle with respect to optical projection system;
Use pattern formation device carries out patterning to second radiation beam and it is projected on the radiation-sensitive materials, so that forms the 3rd collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have the 4th collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Wherein said predetermined angular makes the orientation of pattern characteristics of prolongation of second collimating marks be arranged essentially parallel to the orientation of pattern characteristics of the prolongation of the 3rd collimating marks.
2. method according to claim 1, wherein said calibrating pattern further comprises the 3rd cover pattern characteristics, and is formed the 5th collimating marks of the pattern characteristics with a cover prolongation by the radiation in first radiation beam of the 3rd cover pattern characteristics institute patterning of calibrating pattern; Wherein this method further comprises:
Further rotate substrate with respect to optical projection system around described axle with second predetermined angular; And
Use pattern to form device the 3rd radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 6th collimating marks of pattern characteristics by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern with a cover prolongation; And
Described second predetermined angular makes the orientation of pattern characteristics of prolongation of the 5th collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 6th collimating marks.
3. method according to claim 2, wherein, in first, second and the 5th collimating marks, it is substantially parallel not having the orientation of pattern characteristics of the prolongation of two collimating marks.
4. method according to claim 2, wherein when second radiation beam is patterned and is projected on the radiation-sensitive materials, form the collimating marks of pattern characteristics with prolongation by the radiation of the 3rd cover pattern characteristics institute patterning of calibrating pattern, and when the 3rd radiation beam is patterned and is projected on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation by the radiation of the second and the 3rd cover pattern characteristics institute patterning of calibrating pattern.
5. method according to claim 2, wherein said calibrating pattern further comprises the quadruplet pattern characteristics, and forms the 7th collimating marks with pattern characteristics that a cover prolongs by the radiation in first radiation beam of the quadruplet pattern characteristics institute patterning of calibrating pattern;
Wherein this method comprises that further centering on described axle with respect to optical projection system further rotates substrate with the 3rd predetermined angular; And
Use described pattern to form device the 4th radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 8th collimating marks of pattern characteristics by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern with a cover prolongation; And
Described the 3rd predetermined angular makes the orientation of pattern characteristics of prolongation of the 7th collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 8th collimating marks.
6. method according to claim 5, wherein, at first, second, in the 5th and the 7th collimating marks, it is substantially parallel not having the orientation of pattern characteristics of the prolongation of two collimating marks.
7. method according to claim 5, wherein when second radiation beam is patterned and is projected on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation by the radiation of the third and fourth cover pattern characteristics institute patterning of calibrating pattern, and when third and fourth radiation beam is patterned and is projected to respectively on the radiation-sensitive materials, form each collimating marks of the pattern characteristics with prolongation respectively by the radiation of second, third and the 4th pattern characteristics institute patterning of calibrating pattern.
8. method according to claim 5 further comprises:
Be under the situation of identical orientation with respect to described optical projection system at substrate, when each radiation beam is patterned and is projected on the radiation-sensitive materials, use pattern to form device at least one extra radiation beam is carried out patterning, and described extra radiation beam projected on the radiation-sensitive materials, so that each extra radiation beam forms collimating marks, this collimating marks of being formed by described each extra radiation beam is corresponding to being formed by described each radiation beam that is projected to the patterning on the radiation-sensitive materials, on the described orientation of substrate, but the collimating marks at the diverse location place on substrate.
9. according to the method for claim 1, further comprise:
Be under the situation of identical orientation with respect to described optical projection system at substrate, when each radiation beam is patterned and is projected on the radiation-sensitive materials, use pattern to form device at least one extra radiation beam is carried out patterning, and described extra radiation beam projected on the radiation-sensitive materials, so that each extra radiation beam forms collimating marks, this collimating marks of being formed by described each extra radiation beam is corresponding to being formed by described each radiation beam that is projected to the patterning on the radiation-sensitive materials, on the described orientation of substrate, but the collimating marks at the diverse location place on substrate.
10. method according to claim 1 comprises that further the pattern to being formed on substrate by the selectivity exposure of radiation-sensitive materials develops.
11. method according to claim 10 further comprises etched substrate.
12. method according to claim 1, wherein the pattern characteristics of the prolongation of collimating marks is the striped that is used to form grating.
13. method according to claim 1, wherein the pattern characteristics of each prolongation comprises the array of structure.
14. the method for a calibration measurement instrument comprises a plurality of collimating marks that check is formed on substrate by following method, this method comprises:
Radiation sensitive material layer is provided to the surface of substrate;
Use pattern to form device first radiation beam is carried out patterning, described pattern forms device calibrating pattern is provided, and described calibrating pattern comprises the first cover pattern characteristics and the second cover pattern characteristics;
First radiation beam of patterning is projected on the radiation-sensitive materials, so that forms first collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have second collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Rotate substrate with respect to optical projection system at a predetermined angle around the axle that is substantially perpendicular to substrate surface;
Use pattern to form device second radiation beam is carried out patterning, and described radiation beam projected on the radiation-sensitive materials, so that forms the 3rd collimating marks, and forms by the radiation of the second cover pattern characteristics institute patterning of calibrating pattern and to have the 4th collimating marks of overlapping the pattern characteristics of prolongation with pattern characteristics that a cover prolongs by the radiation of the first cover pattern characteristics institute patterning of calibrating pattern;
Wherein said predetermined angular makes the orientation of pattern characteristics of prolongation of second collimating marks be basically parallel to the orientation of pattern characteristics of the prolongation of the 3rd collimating marks.
15. method according to claim 14, wherein check difference between the result that a plurality of collimating marks obtain to be used to the side-play amount of the orientation of calibration measurement instrument, described a plurality of collimating marks is formed by the radiation of the identical cover pattern characteristics institute patterning of calibrating pattern, but the described identical cover pattern characteristics of calibrating pattern has the pattern characteristics of the prolongation that is not parallel to each other.
16. method according to claim 15, wherein check difference between the result of three or more collimating marks to be used at the side-play amount of the shape of the radiation beam of the collimating marks that is used for being radiated at measuring tool and be used for being radiated in the side-play amount of incident angle of radiation beam of collimating marks of measuring tool at least one come the calibration measurement instrument, described three or more collimating marks are formed by the radiation of the identical cover pattern characteristics institute patterning of calibrating pattern, but the described identical cover pattern characteristics of calibrating pattern has the pattern characteristics of the prolongation that is not parallel to each other.
17. method according to claim 15 wherein checks difference between the resulting result of collimating marks of a plurality of pattern characteristics with the prolongation that is parallel to each other substantially to be used to compensate the radiation intensity variations of the different radiation beam that is used to form described collimating marks.
18. method according to claim 16 wherein checks difference between the resulting result of collimating marks of a plurality of pattern characteristics with the prolongation that is parallel to each other substantially to be used to compensate the radiation intensity variations of the different radiation beam that is used to form described collimating marks.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/727,648 US7605907B2 (en) | 2007-03-27 | 2007-03-27 | Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method |
| US11/727,648 | 2007-03-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101286013A CN101286013A (en) | 2008-10-15 |
| CN101286013B true CN101286013B (en) | 2011-04-20 |
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| CN2008101003995A Expired - Fee Related CN101286013B (en) | 2007-03-27 | 2008-03-27 | Method of forming a substrate for use in calibrating a metrology tool, calibration substrate and metrology tool calibration method |
Country Status (5)
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| US (1) | US7605907B2 (en) |
| JP (1) | JP2009002931A (en) |
| KR (2) | KR20080087734A (en) |
| CN (1) | CN101286013B (en) |
| TW (1) | TWI389137B (en) |
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2007
- 2007-03-27 US US11/727,648 patent/US7605907B2/en not_active Expired - Fee Related
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2008
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- 2008-03-26 TW TW097110839A patent/TWI389137B/en not_active IP Right Cessation
- 2008-03-27 CN CN2008101003995A patent/CN101286013B/en not_active Expired - Fee Related
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| KR20100006553A (en) | 2010-01-19 |
| JP2009002931A (en) | 2009-01-08 |
| TW200847186A (en) | 2008-12-01 |
| CN101286013A (en) | 2008-10-15 |
| KR20080087734A (en) | 2008-10-01 |
| US20080239277A1 (en) | 2008-10-02 |
| US7605907B2 (en) | 2009-10-20 |
| KR101037411B1 (en) | 2011-05-30 |
| TWI389137B (en) | 2013-03-11 |
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