CN101264889A - 制造固体产物的方法和设备 - Google Patents
制造固体产物的方法和设备 Download PDFInfo
- Publication number
- CN101264889A CN101264889A CNA200810082298XA CN200810082298A CN101264889A CN 101264889 A CN101264889 A CN 101264889A CN A200810082298X A CNA200810082298X A CN A200810082298XA CN 200810082298 A CN200810082298 A CN 200810082298A CN 101264889 A CN101264889 A CN 101264889A
- Authority
- CN
- China
- Prior art keywords
- gas
- reactor
- solid product
- sealed
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012265 solid product Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 claims abstract description 116
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000006227 byproduct Substances 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims description 387
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 85
- 229920005591 polysilicon Polymers 0.000 claims description 83
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical class Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 77
- 230000002829 reductive effect Effects 0.000 claims description 66
- 239000003795 chemical substances by application Substances 0.000 claims description 65
- 239000002912 waste gas Substances 0.000 claims description 61
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 25
- 239000005049 silicon tetrachloride Substances 0.000 claims description 25
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910052725 zinc Inorganic materials 0.000 claims description 22
- 239000011701 zinc Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 7
- 238000013022 venting Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 16
- 238000007599 discharging Methods 0.000 abstract description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 64
- 238000006722 reduction reaction Methods 0.000 description 42
- 239000011592 zinc chloride Substances 0.000 description 32
- 235000005074 zinc chloride Nutrition 0.000 description 32
- 238000003860 storage Methods 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 28
- 239000000463 material Substances 0.000 description 27
- 238000009792 diffusion process Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 15
- 238000009833 condensation Methods 0.000 description 14
- 230000005494 condensation Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 239000000047 product Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000002776 aggregation Effects 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000002309 gasification Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 230000009972 noncorrosive effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 206010065042 Immune reconstitution inflammatory syndrome Diseases 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012207 quantitative assay Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007061207A JP5205776B2 (ja) | 2007-03-12 | 2007-03-12 | 固体生成物の製造方法及び製造装置 |
JP2007-061207 | 2007-03-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101264889A true CN101264889A (zh) | 2008-09-17 |
CN101264889B CN101264889B (zh) | 2012-01-04 |
Family
ID=39736371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810082298XA Expired - Fee Related CN101264889B (zh) | 2007-03-12 | 2008-03-10 | 制造固体产物的方法和设备 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7553468B2 (zh) |
JP (1) | JP5205776B2 (zh) |
KR (1) | KR101328521B1 (zh) |
CN (1) | CN101264889B (zh) |
DE (1) | DE102008012710A1 (zh) |
TW (1) | TWI429792B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7922814B2 (en) * | 2005-11-29 | 2011-04-12 | Chisso Corporation | Production process for high purity polycrystal silicon and production apparatus for the same |
JP5018156B2 (ja) * | 2007-03-19 | 2012-09-05 | Jnc株式会社 | 多結晶シリコンの製造方法 |
US20130280896A1 (en) * | 2010-09-30 | 2013-10-24 | Jnc Corporation | Apparatus for producing polycrystalline silicon and method therefor |
KR101651117B1 (ko) | 2014-12-18 | 2016-08-25 | 주식회사 포스코 | 스핀들 고정 장치 |
CN109225459B (zh) * | 2018-08-27 | 2020-09-22 | 浙江宏业装备科技有限公司 | 一种环保型农作物粉碎装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6425922U (zh) | 1987-04-30 | 1989-02-14 | ||
JPS6425922A (en) | 1987-07-20 | 1989-01-27 | Mitsubishi Metal Corp | Method for reducing gallium chloride |
JP2554213B2 (ja) | 1991-06-11 | 1996-11-13 | 川崎製鉄株式会社 | 球状ニッケル超微粉の製造方法 |
JP2867306B2 (ja) * | 1991-11-15 | 1999-03-08 | 三菱マテリアルポリシリコン株式会社 | 半導体級多結晶シリコンの製造方法とその装置 |
JP3197454B2 (ja) | 1995-03-10 | 2001-08-13 | 川崎製鉄株式会社 | 積層セラミックコンデンサー用ニッケル超微粉 |
JP2000345218A (ja) | 1999-05-31 | 2000-12-12 | Toho Titanium Co Ltd | 金属粉末製造用原料吐出ノズルおよび金属粉末の製造装置ならびに金属粉末の製造方法 |
JP4157281B2 (ja) * | 2000-05-11 | 2008-10-01 | 株式会社トクヤマ | シリコン生成用反応装置 |
JP4639005B2 (ja) * | 2001-07-03 | 2011-02-23 | 株式会社トクヤマ | シリコンおよびトリクロロシランの製造法 |
JP2003034519A (ja) | 2001-07-18 | 2003-02-07 | Yutaka Kamaike | シリコンの製造方法 |
JP2003342016A (ja) | 2002-05-24 | 2003-12-03 | Takayuki Shimamune | 多結晶シリコンの製造方法 |
CA2489718C (en) * | 2002-06-18 | 2011-07-19 | Tokuyama Corporation | Silicon production reactor |
JP4462839B2 (ja) * | 2003-03-19 | 2010-05-12 | 株式会社キノテック・ソーラーエナジー | シリコンの製造装置及び製造方法 |
JP4497813B2 (ja) * | 2002-12-19 | 2010-07-07 | コスモ石油株式会社 | シリコンの製造方法 |
-
2007
- 2007-03-12 JP JP2007061207A patent/JP5205776B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-05 DE DE102008012710A patent/DE102008012710A1/de not_active Withdrawn
- 2008-03-07 US US12/044,656 patent/US7553468B2/en not_active Expired - Fee Related
- 2008-03-10 KR KR1020080021934A patent/KR101328521B1/ko not_active IP Right Cessation
- 2008-03-10 TW TW097108342A patent/TWI429792B/zh not_active IP Right Cessation
- 2008-03-10 CN CN200810082298XA patent/CN101264889B/zh not_active Expired - Fee Related
-
2009
- 2009-05-22 US US12/471,236 patent/US8657956B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008222476A (ja) | 2008-09-25 |
DE102008012710A1 (de) | 2008-10-09 |
KR20080083580A (ko) | 2008-09-18 |
KR101328521B1 (ko) | 2013-11-13 |
US7553468B2 (en) | 2009-06-30 |
US20090246102A1 (en) | 2009-10-01 |
JP5205776B2 (ja) | 2013-06-05 |
CN101264889B (zh) | 2012-01-04 |
TW200844273A (en) | 2008-11-16 |
US8657956B2 (en) | 2014-02-25 |
US20080226531A1 (en) | 2008-09-18 |
TWI429792B (zh) | 2014-03-11 |
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Owner name: JNC CORPORATION Free format text: FORMER OWNER: CHISSO CORPORATION Effective date: 20111027 |
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Effective date of registration: 20111027 Address after: Japan Tokyo Chiyoda Otemachi two chome 2 No. 1 Applicant after: JNC Corporation Address before: Japan Osaka Osaka North Island in the three chome 3 No. 23 Applicant before: Chisso Corporation |
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