CN101255547A - 大面积基板处理系统的基座结构体 - Google Patents
大面积基板处理系统的基座结构体 Download PDFInfo
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- CN101255547A CN101255547A CNA2008100815223A CN200810081522A CN101255547A CN 101255547 A CN101255547 A CN 101255547A CN A2008100815223 A CNA2008100815223 A CN A2008100815223A CN 200810081522 A CN200810081522 A CN 200810081522A CN 101255547 A CN101255547 A CN 101255547A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
本发明提供一种设置在大面积基板处理系统内的基座结构体。该基座结构体包括:加热器(100),提供用于加热基板的热源;前置基座(300),覆盖加热器(100)的上部,装载安装多个基板的晶舟;以及导向基座(200),包围加热器(100)的侧面。本发明涉及的基座结构体具有如下效果,即通过导向基座防止从加热器产生的热量泄漏到加热器的侧面,防止从加热器产生的微小粉尘扩散到处理室内部。
Description
技术领域
本发明涉及设置在大面积基板处理系统内的基座结构体,尤其涉及设置在为制作平板显示器而在玻璃基板上蒸镀规定物质、或者对已蒸镀的规定物质进行热处理的工艺处理室内部的基座结构体。
背景技术
最近,不仅对平板显示器的需求急剧增加,而且喜欢大画面显示器的倾向也越发增加,因此对用于制造平板显示器的大面积基板处理系统的关心越来越大。
能够实现薄型化、轻型化和低电力消耗化的平板显示器的种类有LCD(Liquid Crystal Display,液晶显示器)、PDP(plasma display panel,等离子显示器)、OLED(Organic Light Emitting Display,有机发光显示器)等。
制造平板显示器时使用的大面积基板处理系统,大致可以分为蒸镀装置和热处理装置。
作为担负着形成成为平板显示器的核心结构的透明传导层、绝缘层、金属层或硅层的工序的装置,蒸镀装置有LPCVD(Low PressureChemical Vapor Deposition,低压化学蒸镀)、PECVD(Plasma EnhancedChemical Vapor Deposition,等离子体增强化学蒸镀)等化学蒸镀装置和溅镀(sputtering)等物理蒸镀装置。并且,热处理装置是担负着蒸镀工序后的退火工序的装置。
例如,在LCD的情况下,作为代表性的蒸镀装置有薄膜晶体管(Thin Film Transistor;TFT)的非晶硅蒸镀装置,作为代表性的热处理装置有将上述非晶硅变成多晶硅的装置。
为了进行这样的蒸镀和热处理工序,必须将玻璃基板加热到适当的温度。因此,通常在工艺处理室内设置装载玻璃基板的基座(susceptor)结构体,但其构成为在这种基座结构体内部内置作为发热体的加热器,以便能够加热安装有装载在基座上的多块玻璃基板的晶舟(boat)。换言之,基座结构体具有在工艺处理室内支承并加热玻璃基板的作用。
图1为表示现有技术的基座结构体的结构的剖视图。
如图1所示,在作为大面积基板处理系统的工艺处理室1内侧的下部设置有板状的加热器2,在加热器2的上部设置基座3。装载有多块玻璃基板的晶舟(未图示)被装载在基座3的上部。若晶舟被装载到基座上,则一边使加热器2工作加热玻璃基板、一边进行蒸镀或热处理工序。
但是,如图1所示的现有技术的基座结构体存在如下的问题。
首先,加热器产生的热量通过基座传递给玻璃基板,但由于一部分热量通过加热器的侧面发散而浪费,因此存在加热器的热效率降低的问题。
而且,存在加热器工作中产生的微小粉尘通过加热器的侧面扩散到玻璃基板上的问题。如果蒸镀和热处理过程中从加热器散发出的微小粉尘落在玻璃基板上,会存在平板显示器的特性急剧降低的可能。
另外,由于基座由一块单板构成,因此存在安装于基座结构体内的加热器2不工作时,不容易更换加热器的问题。
发明内容
本发明为了解决上述问题而做出,其目的是提供一种设置在大面积基板处理系统内的基座结构体,通过采取用全部覆盖加热器的上面部分和侧面部分的前置基座和导向基座构成的方式,提供一种热效率高、阻挡微小粉尘的扩散、容易更换加热器。
为了达到上述目的,本发明基座结构体,设置在大面积基板处理系统内,其包括:加热器,提供用于加热基板的热源;前置基座,覆盖所述加热器的上部,装载所述基板;以及,导向基座,包围所述加热器的侧面。
在此,上述前置基座由3个彼此能够分离的部件构成,上述3个部件分可以由1个中央部件和以互相对称的结构配置在上述中央部件的两侧的2个侧部件构成。
可以在上述中央部件的下部形成与上述导向基座相结合的凸起。
上述导向基座可以包括:一对主体,以互相对称的结构相对置地配置,彼此的端部紧密连接且彼此能够分离;以及支承棒,连接上述主体的两端进行支承。
可以在上述主体的两端上部形成与上述前置基座相结合的槽。
上述前置基座和上述导向基座可以用石英、陶瓷或石墨制造。
本发明的基座结构体通过采用由完全覆盖加热器的上面部分和4个侧面部分的前置基座和导向基座构成的方式,具有加热器的热效率高、能够阻挡微小粉尘扩散、容易更换加热器的效果。
附图说明
图1是表示现有技术的基座结构体的结构的剖视图。
图2是表示本发明的一个实施方式的基座结构体的结构的分解立体图。
图3是表示导向基座的主体的结构的立体图。
图4A是表示前置基座的中央部件的结构的立体图。
图4B是表示前置基座的侧部件的结构的立体图。
标记说明
100 加热器
200 导向基座
300 前置基座
具体实施方式
下面参照附图详细说明本发明的结构。
图2是表示本发明的一个实施方式的基座结构体的结构的分解立体图。
本发明涉及的基座结构体的基本结构包括:加热器100,提供用于加热基板的热源;导向基座200,由2个主体构成,包围加热器100的4个侧面;以及前置基座300,由3个部件构成,覆盖加热器100的上面。安装多个基板的晶舟(未图示)被装载在前置基座300上。
如这里所示,加热器100是层叠了多个板状发热体的结构。
构成导向基座200的主体和构成前置基座300的部件的数量,不必受上述限制。例如,随着大面积基板处理系统尺寸的加大,也可以增加主体和部件的数量。
导向基座200和前置基座300优选用石英或陶瓷等耐热性好的材料制造。这是为了使基座不因加热器产生的热量而变形的缘故。但是,在考虑导热性时,导向基座200和前置基座300可以用石墨(graphite)制造。
图3是表示构成导向基座200的互相对称的2个部件中的一个部件220的结构的立体图。
此时,优选用一对主体220全部包围加热器的四个侧面。
在主体220上设置连接该主体两端的支承棒240。支承棒240设置在主体220短边部中的最上部附近,使其不与加热器100接触。
在通过结合一对主体220完成导向基座200时,连接在主体220上的支承棒240互相平行。
图4A是表示前置基座的中央部件320的结构的立体图,图4B是表示前置基座的侧面部件380的结构的立体图。
如这里所示,前置基座300由具有长方形的板形状的一个中央部件320和具有长方形的板形状且互相对称的2个侧部件380构成。2个侧部件380结合在中央部件320的两侧。
此时,优选前置基座300以能够充分覆盖整个加热器100的上部的尺寸形成。
在前置基座的中央部件320上形成用来与导向基座的主体220相结合的凸起340。凸起340形成在中央部件320的下部,优选形成在四个角部附近。
此时,为了结合导向基座200和前置基座300,在导向基座200的主体220两端的上部形成与凸起340嵌合的槽260(参照图3)。
在此,优选槽260形成在与主体220的短边部和支承棒240相连接的区域接近的位置。
因此,在结合一对主体220而完成导向基座200后,使前置基座300结合到导向基座200上时,在前置基座300的下部形成的凸起340嵌合到在导向基座200上形成的槽260中。此时,在凸起340嵌入槽260的状态下,支承棒240与前置基座300的下部表面接触,支承前置基座300。
如上所述,同由只覆盖加热器的上面部分的单一部件构成的现有技术的方式相比,由全部包围加热器的上面部分和4个侧面部分的多个部件构成的方式的本发明涉及的基座结构体具有以下优点。
首先,由于与现有技术的方式不同,基座结构体全部包围加热器的上面部分和4个侧面部分,因此加热器的热量全部用于加热基板,能够提高加热器的热效率。而且,由于能够使加热器产生的微小粉尘的影响最小化,因此能够提高平板显示器特性。
并且,由于与现有技术的方式不同,基座结构体由多个部件构成,因此加热器出现故障时能够容易地更换加热器。
因此,可以说本发明的工业利用性极高。
另一方面,虽然在本说明书中利用几个优选实施方式叙述了本发明,但如果是本领域技术人员,应该明白不脱离本申请的权利要求范围所公开的本发明的范畴及思想时,可以进行多个变形和修改。
Claims (6)
1.一种基座结构体,设置在大面积基板处理系统内,其特征在于,包括:
加热器,提供用于加热基板的热源;
前置基座,覆盖所述加热器的上部,装载所述基板;以及,
导向基座,包围所述加热器的侧面。
2.如权利要求1所述的基座结构体,其特征在于,
所述前置基座由3个彼此能够分离的部件构成;
所述3个部件是1个中央部件和以互相对称的结构配置在所述中央部件的两侧的2个侧部件。
3.如权利要求2所述的基座结构体,其特征在于,
在所述中央部件的下部形成有与所述导向基座结合的凸起。
4.如权利要求1所述的基座结构体,其特征在于,
所述导向基座包括:彼此能够分离的一对主体,以互相对称的结构相对置地配置,彼此的端部紧密连接;以及支承棒,连接所述主体的两端进行支承。
5.如权利要求4所述的基座结构体,其特征在于,
在所述主体的两端上部形成有与所述前置基座相结合的槽。
6.如权利要求1所述的基座结构体,其特征在于,
所述前置基座和所述导向基座用石英、陶瓷或石墨制造。
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KR1020070019994A KR100830237B1 (ko) | 2007-02-28 | 2007-02-28 | 대면적 기판 처리 시스템의 서셉터 구조물 |
KR1020070019994 | 2007-02-28 |
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KR (1) | KR100830237B1 (zh) |
CN (1) | CN101255547A (zh) |
TW (1) | TWI373817B (zh) |
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KR101224520B1 (ko) * | 2012-06-27 | 2013-01-22 | (주)이노시티 | 프로세스 챔버 |
KR102408403B1 (ko) * | 2015-11-04 | 2022-06-14 | (주)포인트엔지니어링 | 서셉터 및 이를 포함하는 진공챔버 |
WO2020023409A1 (en) * | 2018-07-24 | 2020-01-30 | Applied Materials, Inc. | Optically transparent pedestal for fluidly supporting a substrate |
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JP2546414B2 (ja) * | 1990-07-06 | 1996-10-23 | 日新電機株式会社 | 気相成長装置 |
KR980005304U (ko) * | 1996-06-29 | 1998-03-30 | 고주파를 이용하는 반도체 제조장비의 잡음원 차폐및 챔버 가열장치 | |
JPH10204645A (ja) | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | 下部電極 |
JP4024497B2 (ja) * | 2001-07-25 | 2007-12-19 | シャープ株式会社 | 異物除去機構,液流処理装置および異物除去方法 |
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US20060011137A1 (en) * | 2004-07-16 | 2006-01-19 | Applied Materials, Inc. | Shadow frame with mask panels |
JP2007042845A (ja) * | 2005-08-03 | 2007-02-15 | Furukawa Co Ltd | サセプタ及び気相成長装置 |
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JP4709862B2 (ja) | 2011-06-29 |
KR100830237B1 (ko) | 2008-05-16 |
TW200839926A (en) | 2008-10-01 |
JP2008218995A (ja) | 2008-09-18 |
TWI373817B (en) | 2012-10-01 |
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