JP2020524892A - 基板支持装置 - Google Patents
基板支持装置 Download PDFInfo
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- JP2020524892A JP2020524892A JP2019559270A JP2019559270A JP2020524892A JP 2020524892 A JP2020524892 A JP 2020524892A JP 2019559270 A JP2019559270 A JP 2019559270A JP 2019559270 A JP2019559270 A JP 2019559270A JP 2020524892 A JP2020524892 A JP 2020524892A
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- 239000000758 substrate Substances 0.000 title claims abstract description 206
- 239000000463 material Substances 0.000 claims abstract description 66
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 239000011247 coating layer Substances 0.000 claims description 34
- 239000010453 quartz Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 13
- 238000009826 distribution Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
Abstract
Description
前記コーティング層の一部は前記陷沒部の側面及び底面上に配置され、前記コーティング層の一側は前記基板の前記端の下面と接触するように構成されることができる。
Claims (20)
- 基板を支持する支持部材と、
前記支持部材の縁端に配置される温度補償部材と、
を含み、
前記支持部材は透光性素材からなり、前記温度補償部材は不透光性素材からなり、
前記温度補償部材の表面は、洗浄ガスに対して耐食性を有する素材からなることを特徴とする、基板支持装置。 - 前記温度補償部材の表面は、洗浄ガスに対して耐食性を有する素材でコートされることを特徴とする、請求項1に記載の基板支持装置。
- 前記支持部材は石英(quartz)からなり、
前記温度補償部材は、炭化ケイ素(SiC)、ブラックセラミック(Black ceramic)、ブラック石英(Black Quartz)、及びグラファイト(graphite)の少なくとも1種からなることを特徴とする、請求項1又は2に記載の基板支持装置。 - 前記基板の側面と前記温度補償部材の側面は互いに対向するように構成され、前記基板と前記温度補償部材は互いに離隔して配置されることを特徴とする、請求項1又は2に記載の基板支持装置。
- 前記温度補償部材は前記支持部材より熱伝導率(thermal conductivity)の高い素材からなることを特徴とする、請求項1又は2に記載の基板支持装置。
- 前記温度補償部材は、
前記支持部材と同じ素材からなる胴体部と、
前記胴体部の表面にコーティングされ、前記胴体部と異なる素材から形成されるコーティング層と、
を含むことを特徴とする、請求項1に記載の基板支持装置。 - 前記コーティング層は前記胴体部より熱伝導率の高い素材からなることを特徴とする、請求項6に記載の基板支持装置。
- 前記支持部材及び前記胴体部は石英からなり、
前記コーティング層は黒体からなることを特徴とする、請求項7に記載の基板支持装置。 - 前記温度補償部材はリング形に形成され、前記基板を取り囲むように配置されることを特徴とする、請求項1に記載の基板支持装置。
- 前記支持部材は、
前記基板が装着される装着部と、
前記装着部と前記温度補償部材の内側面との間に形成されるリング形の陷沒部と、
を含むことを特徴とする、請求項1に記載の基板支持装置。 - 前記基板は、側面と縁部の下面が露出されるように前記陷沒部に配置されることを特徴とする、請求項10に記載の基板支持装置。
- 前記基板は、縁部の上面、側面及び下面が前記温度補償部材から放出される熱によって加熱されるように構成されることを特徴とする、請求項11に記載の基板支持装置。
- 前記温度補償部材と前記基板は前記支持部材の上面に配置され、前記温度補償部材の下面と前記基板の下面は上下方向に同じ高さに配置されることを特徴とする、請求項1に記載の基板支持装置。
- 基板を支持する支持部材と、
前記支持部材の縁端に配置され、前記支持部材と異なる素材からなる温度補償部材と、
を含み、
前記支持部材は、
前記基板が装着される装着部と、
前記装着部と前記温度補償部材の内側面との間に形成されるリング形の陷沒部とを含み、
前記温度補償部材の表面は洗浄ガスに対して耐食性を有する素材からなり、
前記基板は、側面と縁部の下面が露出されるように前記陷沒部に配置され、前記温度補償部材から放出される熱によって加熱されるように構成される、基板支持装置。 - 前記温度補償部材は前記支持部材より熱伝導率の高い素材からなることを特徴とする、請求項14に記載の基板支持装置。
- 前記支持部材は石英からなり、前記温度補償部材は少なくとも一部が黒体からなることを特徴とする、請求項15に記載の基板支持装置。
- 前記温度補償部材は、
前記支持部材と同じ素材からなる胴体部と、
前記胴体部の表面にコーティングされ、前記胴体部と異なる素材からなるコーティング層と、
を含み、
前記コーティング層の一部は前記陷沒部の側面及び底面上に配置され、前記コーティング層の一側は前記基板の前記端の下面と接触するように構成されることを特徴とする、請求項14に記載の基板支持装置。 - 前記コーティング層は前記胴体部より熱伝導率の高い素材からなることを特徴とする、請求項17に記載の基板支持装置。
- 前記温度補償部材の表面は、洗浄ガスに対して耐食性を有する素材でコートされることを特徴とする、請求項14に記載の基板支持装置。
- 前記黒体は、炭化ケイ素(SiC)、セラミック(ceramic)、酸化アルミニウム(Al2O3)、グラファイト(graphite)、及び石英(Quartz)の少なくとも1種の物質を含むことを特徴とする、請求項8又は16に記載の基板支持装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20170079595 | 2017-06-23 | ||
KR10-2017-0079595 | 2017-06-23 | ||
PCT/KR2018/007186 WO2018236201A1 (ko) | 2017-06-23 | 2018-06-25 | 기판 지지장치 |
Publications (3)
Publication Number | Publication Date |
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JP2020524892A true JP2020524892A (ja) | 2020-08-20 |
JP2020524892A5 JP2020524892A5 (ja) | 2021-08-05 |
JP7345397B2 JP7345397B2 (ja) | 2023-09-15 |
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JP2019559270A Active JP7345397B2 (ja) | 2017-06-23 | 2018-06-25 | 基板支持装置 |
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US (1) | US11417562B2 (ja) |
JP (1) | JP7345397B2 (ja) |
KR (1) | KR102147326B1 (ja) |
CN (1) | CN110622291A (ja) |
TW (1) | TWI793137B (ja) |
WO (1) | WO2018236201A1 (ja) |
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KR100743596B1 (ko) * | 2005-08-16 | 2007-07-27 | 주식회사 협성히스코 | 압력계 |
KR100720002B1 (ko) * | 2006-06-09 | 2007-05-21 | 조현찬 | 금속무늬를 인쇄한 보석 및 그 제조방법 |
KR100712227B1 (ko) * | 2006-06-15 | 2007-04-27 | 이운갑 | 정미기 및 그 정미기를 이용하여 도정된 흑미 |
KR100764123B1 (ko) * | 2006-07-20 | 2007-10-09 | 광신금속(주) | 외줄형 가시철선 및 이를 이용한 윤형 철조망 |
KR100746236B1 (ko) * | 2006-10-02 | 2007-08-06 | 정광용 | 자연적인 그늘막을 형성하는 나뭇가지 및 나뭇잎과 열매,꽃들로 구성된 자연 파라솔 |
KR100741292B1 (ko) * | 2007-02-16 | 2007-07-23 | 종 완 김 | 신발끈에 의해 다양한 형태가 가능한 신발 |
KR100733029B1 (ko) * | 2007-02-27 | 2007-06-28 | 주식회사 누리플랜 | 가로등 |
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CN110622291A (zh) | 2019-12-27 |
US11417562B2 (en) | 2022-08-16 |
US20210082738A1 (en) | 2021-03-18 |
KR20190000850A (ko) | 2019-01-03 |
TWI793137B (zh) | 2023-02-21 |
TW201906069A (zh) | 2019-02-01 |
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KR102147326B1 (ko) | 2020-08-24 |
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