CN1919768B - 可主动冷却的基板支撑件 - Google Patents

可主动冷却的基板支撑件 Download PDF

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CN1919768B
CN1919768B CN2006101215010A CN200610121501A CN1919768B CN 1919768 B CN1919768 B CN 1919768B CN 2006101215010 A CN2006101215010 A CN 2006101215010A CN 200610121501 A CN200610121501 A CN 200610121501A CN 1919768 B CN1919768 B CN 1919768B
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substrate
substrate support
cooling
temperature
thermal conductor
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CN1919768A (zh
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S·里昂
S·H·赵
W·A·巴格雷
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Abstract

本发明提供一种用于控制制程腔中基板温度的基板支撑组件以及方法，而使基板具有温度均一性为+/-5℃。基板支撑组件包括：包含有铝材料的热导体；位于热导体的表面、且将大面积玻璃基板支撑于其上方的基板支撑表面；嵌设于热导体内的一个或多个加热组件；以及嵌设于热导体内并位于一个或多个加热组件周围的一个或多个冷却通道。另外亦提供包括本发明的基板支撑组件的一制程腔。

Description

可主动冷却的基板支撑件
技术领域
本发明的实施例是提供一种平板(flat panel)的基板制程所使用的基板支撑件。
现有技术
液晶显示器(LCD)或平板显示器(FPD)通常用于有源矩阵(activematrix)显示器(如计算机以及电视屏幕)、个人数字助理(PDA)、移动电话，以及太阳能电池等。一般来说，平板显示器包括两块玻璃板，并在两者之间夹设一液晶材料层；至少一块玻璃板包括设置在所述玻璃板上的至少一个导电膜，且导电膜连接至一电源。由电源提供给导电膜的电力改变了晶体材料的方位，因而在平板显示器上产生一图形(如文字或图样)。平板制程中所使用的基板为大尺寸，通常超过300mm×400mm，并期望表面积能够超过4平方公尺。因此，大面积基板进行加工所使用的基板支撑件的尺寸也必须够大而能符合基板的大表面积。
等离子体增强化学气相沉积(PECVD)经常应用于平板显示器的制程当中而在基板上沉积一薄膜。PECVD的实施通常藉由将一前导气体导入真空制程腔中，并使其激发为等离子体。图1为一CVD制程腔2的剖面示意图，所述CVD制程腔2包括设置于内并用于支撑基板12(未按比例)的支撑板18以及基座22。反应性前导气体通过接近制程腔2顶端的气体入口14流入扩散板16中，并被激发而在基板12表面形成材料层，其中基板12被置放于可控温的基座(或基板支撑件)22上。设置于侧壁8上的开口10则供机械手臂(图中未示出)运送基板12进出制程腔2。支撑板18连结至支撑轴20以支撑基座22，支撑板18通常由陶瓷材料的单一矩形板制成，如：氧化铝，且支撑板18的大小几乎涵盖整个基座22范围。CVD制程腔2的基座22以往由铝的单一矩形板制成，并通常由嵌设于内且具有热电偶的加热器(图中未示出)进行加热，而其能量由电源24提供。加热器亦可设置于基座22的背面，或藉由一夹板而夹设在基座22上。
一般来说，制程腔2的基板支撑件可从室温加热至低于500℃的高温，而基座22会因为缺乏足够的支撑力而偏斜及下垂。支撑板18的陶瓷材料则用以支撑由柔软的铝所制成的基座22。然而，陶瓷为较不良的热导体，因此在接触加热基座22的支撑板18上表面以及支撑板18的较低温下表面之间出现温度梯度，因而造成支撑板18的外周围往下偏斜。由基座22所支撑的基板12倾向于与基座22相符，因此基板12亦偏斜。结果，基板12与扩散板16之间的垂直距离，与基板12的中央部位和扩散板16之间的距离34不一定相同，而源自大程度偏斜的较大距离36是位于靠近基板12的周围处。垂直距离的差异(亦即基板偏斜的距离)大幅降低沉积于大面积基板上的沉积薄膜的均一性。
另外，在PECVD腔室中点燃等离子体之后，源自等离子体的能量亦会产生热，并直接加诸于基板12以及基板支撑件(如：基座22)。因此，对于置放在基座22上方的加工中基板12则会出现短暂升温或高温(如：升高约30～50℃，或自150℃升高约20％～30％的温度)。如此激烈的温度变化必须加以控制以维持加工中的基板12的恒温状态，另外，在制程进行之后，以及远距等离子体清洗、射频辅助冷却和/或腔室零件清洗与维护期间，还需要冷却制程腔2的基座22。然而，大多数的PECVD腔室在基座22中并无任何冷却设计(即：自行缓慢冷却至室温)，或者仅利用围绕在基板12背面(而非在基座22内)的冷却机构。上述现有技术的设计显示出维持大面积基板的恒温制程所具有的困难，且通常会造成基板12的大表面积上局部的温度差异。因此，明显可见多处具有较薄的薄膜厚度，使得薄膜厚度出现差异，而此结果并不利于下一代的平板或太阳能电池装置的发展。
因此，需要一种改良的方法与装置来将基板支撑件的温度控制在恒定的温度范围内。
发明内容
本发明提供制程腔、基板支撑组件以及用于控制制程腔中基板温度的方法的实施例。在本发明的一实施例中，基板支撑组件适于在制程腔中支撑大面积基板，所述基板支撑组件包括：热导体；位于热导体表面上的基板支撑表面，适于将大面积基板支撑于所述基板支撑表面上；嵌设于热导体内的一个或多个加热组件；以及嵌设于热导体内且位于一个或多个加热组件上方的一个或多个冷却通道。
在另一实施例中，基板支撑组件可包括一个或多个冷却通道，所述一个或多个冷却通道嵌设于热导体内，并以螺旋或漩涡状配置环绕一个或多个加热组件的周围位置。在又一实施例中，一个或多个冷却通道包括流入回路(in-flow loops)及流出回路(out-flow loops)。流入回路和/或流出回路亦可各自在热导体中为螺旋状配置。在再一实施例中，相邻的冷却通道包括以相反的流入及流出方向流动的冷却流体。
另外，制程腔包括腔室主体、气体分配板组件以及用以支撑大面积基板的基板支撑组件。基板支撑组件包括：热导体；位于热导体表面上的基板支撑表面，适于将大面积基板支撑于所述基板支撑表面上；嵌设于热导体内的一个或多个加热组件；以及嵌设于热导体内，且位于一个或多个加热组件上方，并以螺旋或漩涡状配置位于一个或多个加热组件周围的一个或多个冷却通道。
在另一实施例中，用于维持制程腔中大面积基板的温度的方法包括：将大面积基板置放于制程腔中基板支撑组件的基板支撑表面上方；将冷却材料以恒定流速流入一个或多个冷却通道；以及藉由调整一个或多个加热组件的加热功率，使大面积基板维持在恒定温度。
附图说明
本发明上方所详述的特征皆可详细地被了解，而有关于本发明更进一步的描述可参阅实施例，并摘录于上方的发明内容中，而部分特征亦绘示于附图当中。然而，值得注意的是，附图仅绘示本发明的一般实施例，但并非限制本发明的技术范畴，其它等效的实施例亦应属于本发明。为了协助了解，尽可能使用相同的组件标号来表示图标中相同的组件。
图1绘示CVD制程腔中基板支撑件的剖面示意图。
图2绘示本发明的包括基板支撑组件的制程腔的一实施例的剖面示意图。
图3A是根据本发明一实施例中基板支撑件的导体的平面视图。
图3B是根据本发明另一实施例中基板支撑件的导体的平面视图。
图4A是根据本发明一实施例中基板支撑件的导体的平面视图。
图4B是根据本发明另一实施例中基板支撑件的导体的平面视图。
图4C是根据本发明的又一实施例中基板支撑件的导体的平面视图。
图5是根据本发明的又一实施例中基板支撑件的导体的剖面图。
图6是绘示用于控制制程腔中基板的温度的方法的一实施例的流程图。
主要组件符号说明
2   (CVD)制程腔            8   侧壁
10  开口                  12   基板
14  气体入口              16   扩散板
18  支撑板                20   支撑轴
22  基座(或基板支撑件)    24   电源
34  距离                  36   较大距离
100 制程腔                102  腔室主体
104 供应源(或气源)        106  侧壁
108 底部                  110  上盖组件
112 基板                  114  充气部
116 穿孔区                118  气体分配板组件
122 电源                  124  导体
132 加热组件              134  基板支撑表面
136 冷却通道              138  基板支撑组件
140 制程空间              142  轴
146 波纹管                148  遮蔽边框
158 扩散板                160  吊板
162 气体通路          174 电源
180 进入口            182 清洗源
190 控制器            192 储存器
194 中央处理器(CPU)   196 辅助电路
202 定位销            204 定位销孔洞
222 基板支撑销        224 基板支撑销孔洞
234 销支撑板          400A、400B 流动方向
436 A内部冷却回路     436B 外部冷却回路
510 线圈              520 绝缘材料
600 方法
具体实施方式
本发明针对大面积基板提供基板支撑组件以及用以控制制程腔中基板温度的方法。图2是根据本发明一实施例而绘示的范例制程腔100。而在下方所描述的本发明涉及大面积基板而进行加工的等离子体增强化学气相沉积(PECVD)制程腔，如：购自AKT公司(美国加州圣克拉拉的应用材料公司--Applied Materials，Inc.的分公司)的制程腔。然而，应了解本发明亦对于其它欲控制制程腔中基板支撑件上方的基板温度的系统配置亦具有效用，如：物理气相沉积系统、离子植入系统、蚀刻系统、化学气相沉积系统以及其它系统。
制程腔100包括腔室主体102，所述腔室主体102具有侧壁106以及底部108而部分定义出制程空间140，制程空间140通常通过接口及阀门(图中未示出)以协助基板112(如：大面积玻璃基板)进出制程腔100。侧壁106支撑上盖组件110，所述上盖组件110内含充气部114而将制程空间140与排气孔(包括多种抽气组件，图中未示)结合，以将气体以及制程副产物排放至制程腔100外。制程腔100通常与一个或多个供应源104连接，以提供一个或多个来源成分和/或前导物，例如：含硅化合物供应源、含氧化合物供应源、含氢气体供应源、含碳化合物供应源等之一或其混合物。
基板支撑组件138通常位于腔室主体102的底部。基板支撑件138通常接地，藉此由电源122所提供并施加至位于上盖组件110与基板支撑组件138之间的气体分配板组件118(或在制程腔100的上盖组件110内或附近所设置的其它电极)的RF电力则可激发位于基板支撑组件138以及气体分配板组件118之间的制程空间140内的气体、来源化合物和/或前导物。电源122所提供的RF电力通常与基板112的尺寸相称，以驱动化学气相沉积制程进行。在一实施例中，电源122所提供的RF电力约为大于或等于400瓦特，如介于2000～4000瓦特之间，或介于10000～20000瓦特之间，而可于制程空间140中产生电场。举例来说，大于或等于0.2瓦特/平方厘米的电力密度，如介于0.2～0.8瓦特/平方厘米之间，或约0.45瓦特/平方厘米，而可适用于本发明的低温基板沉积方法。电源122以及匹配电路(图中未示出)会在制程空间140中从源自前导气体的制程气体转变为等离子体并维持。较佳地可采用13.56兆赫(MHz)的高频RF电力，但此并非为必要，亦可采用较低频率的RF电力。另外，腔室的壁面可藉由覆盖陶瓷材料或电镀铝材料来保护。
一般来说，基板支撑组件138与轴142相连，并连接至升降系统(图中未示出)，用以将基板支撑组件138在上升的制程进行位置(图中未示出)以及降低的基板转移位置之间移动。轴142亦可同时提供基板支撑组件138与制程腔100中其它组件之间的电线以及热电偶线的导线管。波纹管146连接至基板支撑组件138，用以提供制程空间140与制程腔100外侧大气之间的真空密封，并协助基板支撑组件138的垂直移动。基板支撑组件138的升降系统通常被调整成使基板112与气体分配板组件118之间的间距在制程期间为最适，比如：大于或等于400密耳(mil；千分之一英寸)。藉由上述可调整间距的功能，在多种沉积条件下使得制程皆可被最适化，进而维持在大面积基板上形成的薄膜所需的均一性。
基板支撑组件138包括导体124，而导体124具有基板支撑表面134，用以于基板112在制程空间140进行制程时，将基板112支撑于基板支撑表面134上方。导体124可由金属或金属合金制成以提供热传导性。在一实施例中，导体124由铝材料制成。然而，亦可使用其它适合的材料。基板支撑组件138亦支撑遮蔽边框148，而遮蔽边框148在基板112进行制程期间，针对设置于基板支撑表面134上方的基板112周围而划定界线。
一般来说，遮蔽边框148防止在基板112以及基板支撑组件138的边缘产生沉积，以使基板112不致于黏附至基板支撑组件138。当基板支撑组件138位于下方的非制程进行位置(图中未示出)时，遮蔽边框148通常位于沿着腔室主体102的内壁处；而当基板支撑组件138位于上方的制程进行位置时，如图2所示，遮蔽边框148则可连接并定位至基板支撑组件148的导体124上，而其是藉由遮蔽边框148上所设置的一个或多个定位沟槽与一个或多个定位销202相互配接而达成。一个或多个定位销202是穿过位于导体124上且接近其周围的一个或多个定位销孔洞204(参见图3B)。一个或多个定位销202亦可选择性地由销支撑板234所支撑，则定位销202于基板112装载或卸除期间，可以随着导体124而上下移动。
可温控的基板支撑组件138包括与电源174相连接的一个或多个电极和/或加热组件132，用以控制性地加热基板支撑组件138以及置放于其上的基板112至预定的温度范围，例如：设定温度为大于或等于100℃。在一实施例中，一个或多个加热组件132被嵌设于导体124内。
图3A～图3B是根据本发明的一个或多个方面的在导体124内设置的一个或多个加热组件132的平面图。举例来说，如图3A所示，加热组件132是通过轴142而进入导体124，沿着导体124的中心部位环绕形成一个或多个内部回路，接着再沿着导体124的周围环绕而形成一个或多个外部回路，再经由轴142而离开导体124，以使一个或多个加热组件132嵌设并遍及于整个导体124内。
另外，亦可在基板支撑组件138中采用一个或多个热电偶(图中未示出)。在一实施例中，使用二个热电偶，分别用于导体124的内部区域以及外周围区。然而，亦可使用其它的加热管线或管路配置。举例来说，一个或多个加热组件132亦可设置于导体124的背面，或藉由一夹板夹设在导体124上。一个或多个加热组件132可以藉由电阻式加热或其它加热方法加热至约大于或等于100℃的既定温度。
基板支撑组件138亦可包括其它额外的机构而用以定位基板112。举例来说，导体124可包括一个或多个基板支撑销孔洞224(参见图3B)以供多个基板支撑销222(参见图2)穿过，并适于将基板222支撑在导体124上方并相隔一短距离。基板支撑销222可设置于接近基板112的周围，而利于传输机械手臂或设置于制程腔100外侧且不干扰传输机械手臂运作的其它传输机构进行置放或移走基板112的动作。在一实施例中，基板支撑销222由绝缘材质(如：陶瓷材料、电镀氧化铝材料等)制成，而在基板112进行制程期间提供电绝缘，且仍具有热传导性。基板支撑销222可选择性地由销支撑板234所支撑，从而在装载或卸除基板112期间，基板支撑销222可在基板支撑组件135内移动而升举基板112。另外，基板支撑销333亦可固定于腔室底部，则导体124可垂直移动以供基板支撑销222通过。
在另一实施例中，当基板112置放于导体124的基板支撑表面134上时，加热组件132的至少一外部回路则定位于基板122的外周围。举例来说，当导体124的尺寸大于基板112的尺寸时，则加热组件132的至少一外部回路设置于包围基板112的外周围位置，而不会干扰到导体124上一个或多个销孔洞的设置位置，例如：基板支撑销孔洞224或定位销孔洞204。
如图3B所示，本发明一实施例提供加热组件132的至少一外部回路设置于围绕基板112的外边缘处，较佳的是，加热组件132的至少一外部回路是围绕于一个或多个基板支撑销孔洞224外，并且远离导体124的中央处而不干扰一个或多个基板支撑销孔洞224的设置位置，因此，基板支撑销孔洞222的定位则是用以支撑基板112的边缘。另外，本发明的另一实施例是提供加热组件132的至少一外部回路设置于一个或多个基板支撑销孔洞224以及导体124的外边缘之间，藉此提供针对基板112的边缘及周围加热的情形。
根据本发明的一个或多个方面，基板支撑组件138还包括嵌设于导体124内部的一个或多个冷却通道136。所述一个或多个冷却通道136被配置成维持温度控制并补偿在基板112进行制程期间可能发生的温度变化情形，如：RF等离子体在制程腔100中产生时所引起的升温或高温情形。冷却通道136的直径并无限制，且可以为任何适合的直径，例如介于1～15mm之间，如：9mm。另外，冷却通道136可由金属或金属合金制成而提供热传导性。在一实施例中，冷却通道136由不锈钢金属材料制成，然而，亦可采用其它适合的材料或配置方式。
冷却通道136内流动冷却流体，如：气体材料、水、冷却剂以及其它适合的冷却气体或液体材料，而较佳是使用气体材料。适合的气体材料包括：洁净干燥空气、压缩空气、过滤空气、氮气、氢气、惰性气体(如：氩气、氦气等)以及其它气体。在一个或多个冷却通道136中流入气体材料相较于流入冷却水更为有利，虽然冷却水亦可提供效用，但是气体材料可以提供较广温度范围的冷却能力，且不会出现水分渗漏的情形而影响制程基板上沉积薄膜的品质以及腔室中的组件。举例来说，将约10～25℃的气体材料流入一个或多个冷却通道136中，以提供介于室温到高达200℃或以上的温度的冷却控制，反之，冷却水通常在20～100℃下进行操作。
另外，流入冷却通道136的冷却流体可维持在一控制流速下，进而控制基板112于加热组件132加热而进行制程之时，以及/或腔室闲置之时的冷却效率。举例来说，具有9mm的直径，且压力介于25～100psi(如50psi)的范例冷却通道136可用于流入气体冷却材料。因此，利用本发明的具有加热组件132以及冷却通道136的基板支撑组件138，基板112的温度可保持恒定，且可维持基板112的整个大表面积上均匀的温度分布。
图4A～图4C绘示设置于基板支撑组件138的导体124内的加热组件132以及冷却通道136的范例配置情形。如图4A所示，冷却流体通过一个或多个流入(in-flow)的冷却通道流至导体124内，以流动方向400A由中心轴往导体124流动。其中一个或多个流入冷却通道以螺旋配置或漩涡形状朝导体124的周围方向往外延伸。
接着，如图4A所示，冷却流体由流入冷却通道而流往一个或多个流出(out-flow)的冷却通道，以流动方向400B往中心轴流动。其中一个或多个流出冷却通道亦以螺旋状配置往导体热导体124外延伸。总而言之，在一实施例中，冷却通道136为双螺旋配置，分别为螺旋状的流入以及流出冷却通道，而流动方向为如图所示的400A与400B。另外，如图4A所示，冷却通道136的相邻回路或通道中的冷却流体以相反方向流动，如图所示的流动方向400A与400B。
图4B绘示本发明的冷却通道136与加热组件132的另一范例。冷却通道136是通过轴142而进入导体124内，并形成一个或多个内部冷却回路436A，而内部冷却回路436A则环绕加热组件132的一个或多个内部回路；冷却通道136亦形成一个或多个外部冷却回路436B，并在导体124近外周围处环绕加热组件132的一个或多个外部回路。接着，冷却通道136再通过轴142而离开导体124。在一实施例中，冷却通道136的内部冷却回路436A与外部冷却回路436B呈螺旋、漩涡状配置。举例来说，内部冷却回路436A与外部冷却回路436B是由导体124的中央部位朝导体124的周围往外环绕，并接着再朝基板支撑组件138的轴142的中央部位往内环绕。在另一实施例中，冷却通道136的内部冷却回路436A和外部冷却回路436B与供基板支撑销222穿过的一个或多个基板支撑销孔洞224相隔一距离，而不干扰导体124上一个或多个基板支撑销孔洞224的设置位置。
图4C是根据本发明一个或多个方面所绘示的另一范例的冷却通道136配置情形。一个或多个冷却通道136可被设置成螺旋内环绕的C型配置，流动方向如图4C的箭头所示。因此，冷却通道136可以分布并遍及导体124的整个范围。
图5是根据本发明的一个或多个方面的沿着A-A断面的剖面图。如图5所示，本发明一实施例是提供冷却通道136设置于加热组件132的上方，而在基板支撑组件138的导体124内提供足够的温度控制。加热组件132包括内部的一线圈510，以及一些额外的绝缘材料520。另外，一个或多个加热组件132以及一个或多个冷却通道136的回路、管路、或通道可被制造并结合至基板支撑组件138的导体124内，而结合的方法包括多种已知的结合技术，如：焊接、喷砂、高压结合、黏合、锻造等。
在一实施例中，冷却通道136的回路、管路、或通道被设置于加热组件132的通道和/或回路的周围，因此，冷却通道136可分布遍及导体124的整个范围。举例来说，如图5所示，至少两个或更多个冷却通道136的回路被嵌设于加热组件132的通道上方。较佳地，加热组件132的通道上方的至少两个或更多个冷却通道136的回路包括有气体材料流动于内，而其流动方向为相反的流动方向400A和400B。
因此，一个或多个加热组件132以及一个或多个冷却通道136设置于基板支撑组件138内，用以将基板112维持在小于或等于400℃的均一温度下，如：介于100～200℃之间。加热组件132的加热效率可藉由电源174来调控，而冷却通道136的冷却效率则藉由流入冷却通道136的气体材料的流速来调控，亦即为双向加热-冷却的温度控制机制。
因此，基板支撑组件138以及置放于所述基板支撑组件138上的基板112皆可控制地且恒定地维持在一既定的设定温度。利用本发明的基板支撑组件138，导体124上可观测出温度的均一性，约为设定温度的+/-5℃或更小的偏差。即使在多个基板112已在制程腔100中进行制程处理，仍可观察到设定点温度的重复性约小于或等于+/-2℃。在一实施例中，基板112的温度维持恒定，具有约+/-10℃的标准温度偏差，比如：+/-5℃的温度偏差。
另外，基部支撑板可置放于导体124的下方，以提供对基板支撑组件138及置放于基板支撑组件138上的基板112一个结构性的支撑，以防止该些组件因为重力或高温而偏斜，并确保导体124与基板112之间相对较均一且可重复的接触。因此，本发明的基板支撑组件138的导体124提供简单设计，是具有加热与冷却的能力而控制大面积基板112的温度，而不需使用静电吸座(electrostatic chuck)，因为提供任何压力、气体或是流体至基板之后方而真空吸附大面积玻璃基板的设计容易导致玻璃损坏。
再参照图2，上盖组件110通常包括一进入口180，供应源104所提供的制程气体通过进入口180导入制程腔100中。进入口180亦连接至清洗源182以提供一清洗剂(如：分离氟；diassociated fluorine)进入制程腔100中，以从制程腔100的硬件上(包括：气体分配板组件118)移除沉积的副产物或薄膜。
气体分配板组件118通常配置而实质符合基板112的轮廓，举例来说，针对大面积基板则为矩形，而针对晶圆则为圆形。气体分配板组件118包括穿孔区116，由供应源104所提供之前导气体或其它气体(如：氢气)则通过穿孔区116而运送至制程空间140中。穿孔区116提供通过气体分配板组件118而至制程空间140的气体均匀的散布。气体分配板组件118通常包括悬挂在吊板160上的扩散板158。多个气体通路162穿过扩散板158形成，从而允许气体以预定的分布状态而通过气体分配板组件118并进入制程空间140中。
本发明还包括控制器190而与制程腔100中的多个组件连接并控制的。控制器190通常包括中央处理器(CPU)194、辅助电路196以及储存器192；其中CPU 194可以为任何形式的计算机处理器，而可用于工业上的设定，以控制多个腔室、装置以及腔室接口设备；与CPU 194连接的储存器192、任何软件或任何计算机可读介质可以为一个或多个随手可得的储存装置，如：随机存取内存(random access memory；RAM)、只读存储器(read only memory)、硬盘、光盘(CD)、软盘或是其它形式的数字储存器，而可于本地或远控式进行记忆储存。辅助电路196结合至CPU 194而以常规的方式辅助CPU 194，这些电路包括：高速缓存(cache)、电源、时钟电路(clock circuit)、输入/输出电路、子系统等。
在一实施例中，本发明的制程腔100中的基板支撑组件138是适用于加工矩形基板，平板显示器的矩形基板的表面积通常为大尺寸，例如约300mm×400mm或更大的矩形，如：370mm×470mm或更大。腔室主体102、导体124以及制程腔100中的相关组件的尺寸并不受限制，且通常相称并大于制程腔100中进行制程的基板112的尺寸。举例来说，当进行制程的大面积基板112具有约370～2160mm的宽度，及约470～2460mm的长度，则导体124具有约430～2300mm的宽度，以及约520～2600mm的长度，而腔室主体102具有570～2360mm的宽度，以及570～2660mm的长度。
应用于平板显示器时，基板112可包括在可见光光谱为实质光穿透的材料，例如：玻璃或透明塑料。举例来说，应用于薄膜晶体管时，基板112可为一大面积玻璃基板而具有高度光穿透性，然而，本发明可等同地应用于任何型态以及尺寸的基板制程，本发明的基板可以为圆形、方形、矩形或是多角形，以供平板显示器的制作。另外，本发明提供的基板可用以制造任何装置，如：平板显示器(FPD)、可挠式显示器、有机发光二极管(OLED)显示器、可挠式有机发光二极管(FOLED)显示器、高分子发光二极管(PLED)显示器、液晶显示器(LCD)、有机薄膜晶体管、有源矩阵(active matrix)、无源矩阵(passive matrix)、顶发射型(top emission)装置、底发射型(bottom emission)装置、太阳能电池、太阳能板等；而本发明亦可用于硅晶圆、玻璃基板、金属基板、塑料薄膜(如：聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)等)、塑料环氧化物膜等。本发明特别适用于低温PECVD制程，诸如该些用于制造可挠式显示器装置，且于基板制程当中需要温度冷却控制的技术者。
图6是为一用以控制制程腔中基板温度的范例方法600的流程图。在操作过程中，基板置放于制程腔中基板支撑组件的基板支撑表面上方(步骤610)；在基板进行制程期间或之前，基板支撑组件的导体顶端的基板支撑表面温度维持在一设定温度，如：介于100～200℃之间。在步骤620，冷却气体或空气以恒定流速流入嵌设于基板支撑组件的导体内的一个或多个冷却通道。
在一实施例中，冷却气体流入冷却通道的时机为腔室闲置时间、非制程时间或腔室清洗/维护时间。因此，本发明的冷却通道持续作用。在另一实施例中，腔室闲置时间所采用的设定温度与基板制程进行时所设定的制程温度相同。
在步骤630，藉由调整嵌设于基板支撑组件的导体中的一个或多个加热组件所具有的加热效率，使基板在基板制程期间维持恒定温度。举例来说，加热组件的效率可藉由调整连接至加热组件的电源的功率来调整。在一实施例中，不论等离子体是否导入腔室中或等离子体能量所产生的额外热能是否已施加至基板上，针对提供给加热组件的电源功率作微调(fine-tuning)，遍及基板表面积的温度可维持在恒定制程温度100～200℃下，藉以防止基板表面任何的升温或是高温现象。因此，相对于针对加热以及冷却效率的两个或更多个较复杂的控制回路，本实施例的控制器的软件设计仅需一个控制回路，用以调控加热效率。据上所述，本发明的方法600藉由控制基板支撑组件的加热效率，而提供一种简单且可靠的温控机制。然而，基板支撑组件138的加热/冷却效率皆可被调控。
在操作中，基板支撑组件的一个或多个加热组件可被设定为150℃的设定温度，而洁净干燥空气或压缩空气的气体冷却材料具有约16℃的温度，并以恒定流速流入冷却通道，从而维持基板支撑组件的基板支撑表面的温度。当腔室中接近基板支撑表面上方出现等离子体或额外的热源时，则采用压力约50psi且恒定流速的冷却材料可将基板支撑表面的温度恒定维持在约150℃，而表面温度的均一性为+/-2℃。经由测试之后，额外出现的热源即使为约300℃，仍不会影响基板支撑表面的温度，从而本发明利用冷却通道中流入具有约16℃输入温度的冷却流体，基板支撑表面经由测试之后可恒定维持在约150℃。而经过冷却后且流出基板支撑组件的冷却气体经由测试后，发现具有约120℃的输出温度。因此，本发明的冷却通道内所流动的冷却气体存在有相当有效的冷却效率，此现象藉由冷却气体的输出温度与输入温度的差异超过100℃可见。
惟本发明虽以较佳实施例说明如上，然其并非用以限定本发明，任何熟习此技术人员，在不脱离本发明的精神和范围内所作的更动与润饰，仍应属本发明的技术范畴。

Claims (17)

1.一种适以在制程腔中支撑大面积基板的基板支撑组件，包括：
单个的热导体，具有一个或多个基板支撑销孔洞，所述热导体由金属或金属合金制成；
基板支撑表面，位于所述热导体的表面，适以将所述大面积基板支撑于其上；
一个或多个加热组件，嵌设于所述热导体内；以及
一个或多个冷却通道，嵌设于所述热导体内，并位于所述一个或多个加热组件上方，所述一个或多个冷却通道包括多个内部冷却回路以及多个外部冷却回路，所述内部冷却回路和外部冷却回路与所述一个或多个基板支撑销孔洞间隔开，所述一个或多个冷却通道中的相邻通道内包括有以相反流动方向而流动的冷却流体。
2.如权利要求1所述的基板支撑组件，其中所述一个或多个冷却通道包括多个流入回路以及多个流出回路。
3.如权利要求1所述的基板支撑组件，其中所述一个或多个冷却通道环绕所述一个或多个加热组件的周围的位置。
4.如权利要求1所述的基板支撑组件，其中该一个或多个冷却通道包括在其内部流动的气体材料，而所述气体材料的温度介于10～25℃之间。
5.如权利要求4所述的基板支撑组件，其中所述气体材料是选自于由洁净干燥空气、压缩空气以及其混合物所组成的群组。
6.如权利要求4所述的基板支撑组件，其中所述气体材料在所述一个或多个冷却通道中以恒定流速流动。
7.如权利要求1所述的基板支撑组件，其中所述一个或多个冷却通道包括不锈钢材料。
8.如权利要求1所述的基板支撑组件，其中所述基板支撑表面的温度维持在100℃～200℃之间。
9.如权利要求1所述的基板支撑组件，其中所述基板支撑表面的尺寸大于所述大面积基板的尺寸。
10.如权利要求1所述的基板支撑组件，其中所述热导体包括铝材料。
11.如权利要求1所述的基板支撑组件，其中所述基板支撑表面适于为矩形，并支撑具有尺寸大于或等于370mm×470mm的大面积基板。
12.一种适以在制程腔中支撑大面积玻璃基板的基板支撑组件，包括：
单个的热导体，由金属或金属合金制成；
基板支撑表面，位于所述热导体的表面，适以将所述大面积玻璃基板支撑于其上；
一个或多个加热组件，嵌设于所述热导体内；以及
一个或多个冷却通道，嵌设于所述热导体内，位于所述一个或多个加热组件上方，并以螺旋状配置而环绕在所述一个或多个加热组件的周围的位置，所述一个或多个冷却通道中的相邻通道内包括有以相反流动方向而流动的冷却流体。
13.如权利要求12所述的基板支撑组件，其中该一个或多个冷却通道包括在其内部流动的气体材料，而所述气体材料的温度介于10～25℃之间，且所述气体材料是选自于由洁净干燥空气、压缩空气以及其混合物所组成的群组，并在所述一个或多个冷却通道中以恒定流速流动。
14.如权利要求12所述的基板支撑组件，其中所述基板支撑组件用以支撑一个或多个大面积矩形基板，而所述一个或多个大面积矩形基板是用于制造多种装置，所述些装置是选自于由平板显示器、太阳能电池、太阳能板以及其混合物所组成的群组。
15.一种用以在制程腔中维持大面积基板的温度的方法，包括：
将所述大面积基板置放于所述制程腔中的基板支撑组件的基板支撑表面上，所述基板支撑组件包括：
单个的热导体，由金属或金属合金制成；
所述基板支撑表面，位于所述热导体的表面，用以将所述大面积基板支撑于其上；
一个或多个加热组件，嵌设于所述热导体内；以及
一个或多个冷却通道，嵌设于所述热导体内，并位于所述一个或多个加热组件上方，其中所述一个或多个冷却通道包括多个内部冷却回路以及多个外部冷却回路，并且所述一个或多个冷却通道中的相邻通道内包括有以相反流动方向而流动的冷却流体；
将气体冷却材料以恒定流速而恒定流入所述一个或多个冷却通道；以及
调整所述一个或多个加热组件的加热功率而维持所述大面积基板的温度至一设定温度，而温度均一性为所述设定温度偏差小于等于+/-5℃。
16.如权利要求15所述的方法，其中藉由调整所述一个或多个加热组件的加热功率而使所述大面积基板的温度恒定维持在一设定温度100℃～200℃之间，而温度均一性为所述设定温度偏差小于等于+/-5℃。
17.如权利要求15所述的方法，其中所述一个或多个冷却通道中包括有在其内部流动的气体材料，而所述气体材料的温度介于10℃～25℃之间。
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US20070039942A1 (en) 2007-02-22
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