CN101241929B - 半导体结构及形成该半导体结构的方法 - Google Patents
半导体结构及形成该半导体结构的方法 Download PDFInfo
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- CN101241929B CN101241929B CN2008100054468A CN200810005446A CN101241929B CN 101241929 B CN101241929 B CN 101241929B CN 2008100054468 A CN2008100054468 A CN 2008100054468A CN 200810005446 A CN200810005446 A CN 200810005446A CN 101241929 B CN101241929 B CN 101241929B
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Claims (35)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/672,599 US7714358B2 (en) | 2007-02-08 | 2007-02-08 | Semiconductor structure and method of forming the structure |
US11/672,599 | 2007-02-08 |
Publications (2)
Publication Number | Publication Date |
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CN101241929A CN101241929A (zh) | 2008-08-13 |
CN101241929B true CN101241929B (zh) | 2011-06-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2008100054468A Expired - Fee Related CN101241929B (zh) | 2007-02-08 | 2008-02-04 | 半导体结构及形成该半导体结构的方法 |
Country Status (2)
Country | Link |
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US (2) | US7714358B2 (zh) |
CN (1) | CN101241929B (zh) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006019935B4 (de) * | 2006-04-28 | 2011-01-13 | Advanced Micro Devices, Inc., Sunnyvale | SOI-Transistor mit reduziertem Körperpotential und ein Verfahren zur Herstellung |
US7759207B2 (en) * | 2007-03-21 | 2010-07-20 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit system employing stress memorization transfer |
DE102008016426B4 (de) * | 2008-03-31 | 2012-04-19 | Globalfoundries Inc. | Verfahren zum Erzeugen einer Zugverformung durch Anwenden von Verspannungsgedächtnistechniken in unmittelbarer Nähe zu der Gateelektrode |
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US20080191243A1 (en) | 2008-08-14 |
US7932144B2 (en) | 2011-04-26 |
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US20100112766A1 (en) | 2010-05-06 |
US7714358B2 (en) | 2010-05-11 |
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