CN101231958B - 引线框及其制造方法和包含有锁定结构的引线框 - Google Patents
引线框及其制造方法和包含有锁定结构的引线框 Download PDFInfo
- Publication number
- CN101231958B CN101231958B CN2008100005917A CN200810000591A CN101231958B CN 101231958 B CN101231958 B CN 101231958B CN 2008100005917 A CN2008100005917 A CN 2008100005917A CN 200810000591 A CN200810000591 A CN 200810000591A CN 101231958 B CN101231958 B CN 101231958B
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- Prior art keywords
- basis material
- etching
- lead frame
- compound
- lead
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 37
- 238000005530 etching Methods 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 68
- 150000001875 compounds Chemical class 0.000 claims abstract description 60
- 238000000465 moulding Methods 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 22
- 239000011247 coating layer Substances 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 28
- 239000002184 metal Substances 0.000 description 28
- QBWKPGNFQQJGFY-QLFBSQMISA-N 3-[(1r)-1-[(2r,6s)-2,6-dimethylmorpholin-4-yl]ethyl]-n-[6-methyl-3-(1h-pyrazol-4-yl)imidazo[1,2-a]pyrazin-8-yl]-1,2-thiazol-5-amine Chemical compound N1([C@H](C)C2=NSC(NC=3C4=NC=C(N4C=C(C)N=3)C3=CNN=C3)=C2)C[C@H](C)O[C@H](C)C1 QBWKPGNFQQJGFY-QLFBSQMISA-N 0.000 description 17
- 229940125846 compound 25 Drugs 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000004806 packaging method and process Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
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- 238000005728 strengthening Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 241000272168 Laridae Species 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 239000000206 moulding compound Substances 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Lead Frames For Integrated Circuits (AREA)
Abstract
本发明提供了一种引线框和制造所述引线框的方法,其包含有:提供具有平坦的第一侧面和第二侧面的基体材料;从该第一侧面处有选择地蚀刻基体材料到预定的蚀刻水平线,以创造蚀刻区域,所述的蚀刻区域为多行排列;使用不导电的填充混合料在所述的基体材料的第一侧面上填充该蚀刻区域;以及其后从第二侧面蚀刻基体材料到蚀刻水平线,以在第二侧面上暴露出该填充混合料;其中在将该填充混合料暴露后的第一侧面和第二侧面上的没有该填充混合料的区域上形成导电的镀覆层。
Description
技术领域
本发明涉及电子器件,特别是涉及芯片载体,例如引线框,其用于在半导体装配和封装过程中支撑半导体集成电路芯片。
背景技术
传统意义上,引线框被用作来向安装在其上的半导体电路提供电气互连。通常,用来制造引线框的基体材料为铜合金、不锈钢或合金42。但是,随着封装件尺寸越来越小和薄而引线数量越来越多,更高性能的器件方面的强大需求已经导致层压衬底(laminate substrates),例如BGA(BGA:Ball Grid Array)封装件的使用迅速增长,它们更加昂贵。
QFN(QFN:Quad Flad No-lead)封装件得到了发展,其中模塑混合料仅仅在引线框的一个侧面被模塑在引线框上。众所周知,它们尺寸小,成本经济以及产量良好。在性能和效率方面,它们与BGA封装件具有竞争性。另外,QFN封装件也具有用于高速电路的特定机械优点,包括改进的共面性(co-planarity)和散热性。由于QFN封装件没有在高频率应用中不时作为天线(antennas)、制造“噪音”的翼式引线(gull wings leads),所以它们的电气性能优于传统的引线封装件。
QFN封装件最佳使用在低引线数量的阵列中。而且,和标准的引线框封装件相比较,QFN封装件的另一个优点是它们提供更高密度的互联的能力。QFN封装件的引线通常以一行、两行或三行设置的形式被布置。QFN封装件也利用了下面的事实,即基于引线框封装在成本方面比基于层压的衬底更低,因为简单地蚀刻铜薄片形成引线框比通过很多昂贵的制造步骤构造印刷电路板更便宜。
但是,和BGA封装件相比,现有的引线框制造工序仍然不能生产具有类似性能的引线框,其能轻易地包含有多行电气互联。显然,开发一种崭新的能够生产这种高性能引线框的制造引线框的工艺是存在必要的。
发明内容
因此,本发明的目的之一在于开发一种诸如引线框之类的芯片载体,其能被用作为昂贵的BGA衬底的有效代替品。
本发明的另一目的在于生产一种芯片载体,其和传统的引线框相比具有相对更高数量的引线,这些引线使用一种互锁结构充分支撑,以致于该引线框适合于高密度的封装。
相应地,一方面,本发明提供一种制造引线框的方法,其包含有以下步骤:提供具有平坦的第一侧面和第二侧面的基体材料;从该第一侧面处有选择地蚀刻基体材料到预定的蚀刻水平线,以创造蚀刻区域,所述的蚀刻区域为多行排列;使用不导电的填充混合料在所述的基体材料的第一侧面上填充该蚀刻区域;以及其后从第二侧面蚀刻基体材料到蚀刻水平线,以在第二侧面上暴露出该填充混合料;其中在将该填充混合料暴露后的第一侧面和第二侧面上的没有该填充混合料的区域上形成导电的镀覆层。
另一方面,本发明提供一种引线框,其包含有:基体材料,其具有大体平坦的第一侧面和第二侧面,该基体材料还规定有一个或一个以上的晶粒座和大量的引线,所述引线成多行排列,该晶粒座和引线通过基体材料的蚀刻区域被分开;在第一侧面和第二侧面上的晶粒座和引线上形成导电的镀覆层;以及不导电的填充混合料,其形成在基体材料的蚀刻区域,以锁定该晶粒座和引线,从第一侧面和第二侧面都暴露出该填充混合料;其中该填充混合料被如此形成以便于它和所述的基体材料平坦的第一侧面和第二侧面大体齐平(flush with)。
再一方面,本发明提供一种引线框,其包含有:基体材料,其具有大体平坦的第一侧面和第二侧面,该基体材料还规定有一个或一个以上的晶粒座和大量的引线,所述引线成多行排列,该晶粒座和引线通过基体材料的蚀刻区域被分开;在第一侧面和第二侧面上的晶粒座和引线上形成导电的镀覆层;不导电的填充混合料,其形成在基体材料的蚀刻区域,以锁定该晶粒座和引线,从第一侧面和第二侧面都暴露出该填充混合料;以及锁定结构,其为多个缺口的形式,该缺口沿着蚀刻区域的外围边缘设置,可有效地将填充混合料锁定到基体材料上。
参阅后附的描述本发明实施例的附图,随后来详细描述本发明是很方便的。附图和相关的描述不能理解成是对本发明的限制,本发明的特点限定在权利要求书中。
附图说明
根据本发明所述的引线框的特征和其制造的技术特征可结合附图理解的情况下,从下面的详细描述中得到充分的理解,其中:
图1所示为根据本发明较佳实施例所述的引线框的局部剖视平面示意图。
图2a-2f所示为在制造工艺的第一部分期间,位于不同阶段的基体材料的剖面示意图,其中填充混合料被包含到该基体材料以生产图1中的引线框。
图3a-3d所示为在根据本发明第一较佳实施例所述的制造工艺的第二部分期间,位于不同阶段的基体材料的剖面示意图,以生产最终的引线框。
图4a-4g所示为在根据本发明第二较佳实施例所述的制造工艺的第二部分期间,位于不同阶段的基体材料的剖面示意图,以生产最终的引线框。
图5a-5d所示为应用根据本发明较佳实施例所述的制造工艺可生产的各种形式的引线框的示意图。
图6a-6e所示为在根据本发明较佳实施例所述的引线框的模塑期间,用来强化对填充混合料的锁定和防止模塑形成废物(mold voidformation)的各种特征的示意图。
具体实施方式
图1所示为根据本发明较佳实施例所述的用于支撑半导体晶粒11的引线框的局部剖视平面示意图。该引线框包含有引线12和其上键合有半导体晶粒11的晶粒座10。半导体晶粒使用精细的导线13,通常为金线,被连接到引线12上。引线12和晶粒座10被镀覆有第一镍和镍合金层,以及第二钯(palladium)、金、银和其合金层,以加强引线12和导线13之间的连接能力,和加强印刷电路板上引线12和晶粒座10的可焊性。
令人期望地,引线框包含有引线12的内环和外环,以增加引线框中电气连接的密度。
图2a-2f所示为在制造工艺的第一部分期间,位于不同阶段的基体材料的剖面示意图,其中该基体材料将生产图1中的引线框。图2a表明包含有基体金属20的金属基体材料,该基体金属20具有平坦的第一侧面和第二侧面,引线框将从金属基体材料中形成。基体材料可以是,例如,包含有厚度大约为0.003-0.020英寸的铜薄片。
图2b表明一层光阻材料(photoresist)21已经被施加到位于基体金属20的第一侧面的表面。该光阻材料21可包含有光敏的丙烯酸脂聚合物系统(acrylic polymer system),并可以片体形式或作为流体被应用。其厚度可从0.0002到0.003英寸的范围内变化。
图2c表明光阻材料21已经被掩模(masked),并被曝露在光线中,然后被发展来移除光阻材料层21的未被掩模的区域,以曝露基体金属的特定区域22,该特定区域将被可选择地蚀刻掉而形成引线框图案。
图2d表明在第一半蚀刻工序之后引线框的结构,在此期间基体金属20的曝露区域22在基体金属20片体的大体一半厚度处已经被可选择地蚀刻掉23至一预定的蚀刻水平线(etching level)上,以生产期望的引线框图案。这种蚀刻工艺通常为湿法蚀刻工艺,其使用氯化铁(ferric chloride)或氯化铜(cupric chloride)作为蚀刻剂。另外,现有技术中存在许多其他的众所周知的蚀刻工艺和蚀刻剂,不假定本发明限制在任何特定的蚀刻工艺中。
在图2e中,剩余的光阻材料从蚀刻后的基体材料上被剥离,留下半蚀刻的引线框图案24。该剥离工艺较佳地使用带有碱性溶液(alkaline solution)的含水溶解(aqueous dissolution)得以完成。
位于基体金属20的第一侧面上的蚀刻区域然后被填充有填充混合料25。图2f表明在填充混合料25,如模塑混合料或填孔油墨(plugging ink)分别通过模塑或印刷已经被引入到引线框24的半蚀刻区域中的孔穴中之后的半蚀刻引线框24。在这个工序之后,引线12和晶粒座10被硬化后的塑性模塑混合料或填孔油墨所包围和互锁。为了和传统的下游工序兼容,模塑混合料较佳地为热固性(thermoset)类型的塑性混合料,其普遍地使用于半导体封装工业中。在注入填充混合料25之后,通过化学溢料去除或机械溢料去除或二者皆有的方式,模塑混合料的溢料去除(deflashing)或填孔油墨的渗出(bleed)较佳地得以执行,以移除多余的填充混合料。
可以选择地,在如上所述的蚀刻基体金属20的第一侧面之前,通过电解或其他镀覆工艺在基体金属20的第二侧面的整个区域或选定区域沉积(deposit)一个或多个镀覆层28(参见图3和图4)是可能的。在这种情形下,基体金属的第二侧面较适宜地被覆盖以在第一侧面蚀刻期间保护镀覆层28。在第一侧面蚀刻之后,蚀刻区域类似地填充有填充混合料25。
在图2所描述的工序之后,两个选项中的一个可以被使用来生产最终的引线框。
图3a-3d所示为在根据本发明第一较佳实施例所述的制造工艺的第二部分期间,位于不同阶段的基体材料的剖面示意图,以生产最终的引线框。图3a表明层压之后的引线框,在此期间,一个带体,光阻材料,印刷阻剂(print resist)或其他的覆盖层被施加到第一侧面作为蚀刻掩模(etching mask)26,以覆盖模塑后的引线框图案,而防止在第二蚀刻工序中第一侧面的上表面(其已经被半蚀刻)被进一步的蚀刻。
在图3b中,第二侧面上的大体整个未被覆盖的表面在没有选择性的蚀刻的情况下,已被半蚀刻,第二蚀刻工艺之后的引线框结构27得以阐明。在这个第二蚀刻工艺中,铜薄片没有被蚀刻掩模覆盖的表面在基体金属20的大体一半厚度处被蚀刻掉到蚀刻水平线上,以生产引线框结构27。这种蚀刻工序和图2d中所描述的工序相同,但是其较佳地是在没有选择性掩盖的情形下完成的,以致于基体金属20的整个第二侧面被蚀刻到蚀刻水平线上。在从第二侧面蚀刻基体金属20之后,填充混合料25在第二侧面处被曝露。
图3c表明在剥离或分离带体之后的引线框结构27,在此期间,被用作为蚀刻掩模的保护层26被移除。
图3d表明在镀覆工序之后的最终的引线框29,在此期间,几个镀覆层28被沉积在基体金属20第一侧面和第二侧面没有被填充混合料25所填充的区域。首先,较佳地通过一个无电的镀覆工序施加一个镍或镍合金的中间层28。该中间层的厚度通常可以在从0.25到10微米之间,更合适地是在0.5到5微米之间。第二,一个或多个保护层然后可被镀覆,较合适地是使用无电镀(electroless plating)或浸入工艺(immersion process),其中至少镀覆一种金属,该金属选自下面的组群:钯,钯合金,金,金合金和银。该保护层的厚度较合适地是在0.001到5微米之间。由于填充混合料25不是导电体,所以这些镀覆层不会在其上镀覆。藉此生产出本发明较佳实施例所述的引线框。
图4a-4g所示为在根据本发明第二较佳实施例所述的制造工艺的第二部分期间,位于不同阶段的基体材料的剖面示意图,以生产最终的引线框。在本实施例中,首先在引线框结构27的一个表面完成镀覆,更特定地是在第一侧面。图4a表明层压之后的引线框,在此期间,一个带体,光阻材料,印刷阻剂或其他的覆盖层作为蚀刻掩模26被施加,以覆盖铜片,而防止镀覆期间镀覆发生在铜片未被填充的第二侧面上。
图4b表明镀覆之后的引线框,其中,或者镀覆层28,其可包含有镍/钯、镍/金、镍/钯/金和/或银和锡可被镀覆,其较佳地是通过电镀和/或无电镀的方式。这些镀覆层28的镀覆厚度较佳地是在0.001到5微米之间的范围内。
图4c表明去掩模(de-masking)之后的引线框结构,其中用作为第二侧面的覆盖层的蚀刻掩模26被移除。
图4d表明层压之后的引线框结构,在此期间,一个带体,光阻材料,印刷阻剂或其他的覆盖层如蚀刻掩模26被施加,以防止在第二蚀刻期间引线框第一侧面上的半蚀刻表面的蚀刻。
图4e表明第二蚀刻之后的引线框结构,在此期间,基体材料的第二侧面在片体的一半深度处已经被蚀刻掉,以展示出填充混合料25。该蚀刻工艺和图3b所描述的蚀刻工艺相同。
在以上所描述的前述的可选工序中,其中,在蚀刻第一侧面之前,基体金属20的整个第二侧面已经被镀覆有镀覆层28,整个第二侧面应不会被蚀刻。相反,在最终产品中第二侧面上的镀覆层28会保持的区域在这种蚀刻期间应被覆盖。因此,在这种情况下,仅仅基体金属20的设置有填充混合料25的选定区域在第二侧面被蚀刻掉,以便于在基体金属20的第二侧面暴露出填充混合料25。因此,由于基体金属20的第二侧面已经被镀覆,因此下面图4f所描述的基体金属20的第二侧面的镀覆将是不必要的。
图4f表明在基体金属20的第二侧面蚀刻之后和在第二侧面镀覆之后的引线框。几个镀覆层28已被沉积在没有被填充混合料25填充的区域。一个选择是通过镀覆,较佳地是通过使用无电镀覆来施加一个镍或镍合金的中间层。该镍层的厚度通常可以在0.25到10微米之间,更合适地是在0.5到5微米的范围内。其后,一个或多个保护层然后较佳地通过无电镀或浸入镀(immersion plating)被镀覆,在此期间,至少镀覆有一种金属,该金属选自下面的组群:钯、钯合金、金、金合金。保护层的厚度较佳地是在0.001到5微米的范围内。另一个选择是镀覆在0.001到5微米的范围内的一银层或锡层,较佳地通过无电镀或浸入镀的方式。由于填充混合料25不是导电体,所以这些镀覆层28不会镀覆在填充混合料上。
图4g表明在剥离或分离带体之后的最终的引线框结构29,在此期间,被用作为蚀刻掩模26的迭片或覆盖层被移除。
图5a-5d所示为应用根据本发明较佳实施例所述的制造工艺可生产的各种形式的引线框的示意图。图5a是具有两行引线布置形式的引线框14的平面示意图。在这种布置中,围绕每个晶粒座10设置有两行引线12。每个晶粒座10被大量的引线12所环绕,并且引线12和晶粒座10被引线框14的基体材料的蚀刻区域16所分开。填充混合料25被引入到引线框14的蚀刻区域16,以将晶粒座10和引线12互锁。如图3d和图4g所示,填充混合料25被如此形成,以致于填充混合料大体齐平于基体材料的第一平坦侧面和第二平坦侧面。引线12在形状上可以是正方形或长方形,也可以设置为规则的、同轴(in-line)的图案。
图5b是具有3行引线布置形式的引线框14的平面示意图。在这种布置中,围绕每个晶粒座10设置有3行引线12。引线12在形状上可以是正方形或长方形,也可以设置为规则的、同轴的图案。这种布置形式使得引线框14容纳的引线数量高于两行引线的布置形式。
图5c是具有3行引线布置形式的另一种引线框14的平面示意图,除了引线12具有交错(staggered)的图案而不是规则的、同轴的图案。这种交错的图案具有的优点是:其使得更大数量的导线键合环(wirebonding loop)布置选项容易实现。
图5d是具有3行交错的引线布置形式的再一种引线框14的平面示意图,除了引线12被蚀刻成圆形而不是四边形。该圆形的引线有助于促进模塑期间模塑混合料的流动。
图6a-6e所示为在根据本发明较佳实施例所述的引线框的模塑期间,用来强化模塑锁定和防止模塑空洞(void)形成的各种特征的示意图。图6a表明了当使用模塑混合料模塑引线框14的时候,用于强化对填充混合料的锁定和防止模塑空洞的几个结构特征。
一个锁定特征包括向内的槽口(notch-in)特征30,其可以是沿着晶粒座10的边缘预蚀刻和设置的多个槽口,该槽口用来锁固模塑之后的模塑混合料,以防止模塑混合料错位。向内的槽口特征30也促进了模塑流动和减少模塑空洞。这些向内的槽口特征可以是四边形的,例如正方形或矩形的造型。
更多的锁定特征可以是沿着引线框14的蚀刻区域16的外围边缘分布的缺口(indentations)的形式,其被用来有效锁固填充混合料25到引线框14上。该缺口沿着蚀刻区域16的周边大体呈T形,例如T型锁扣31,或者在边角处大体呈M型,例如M型锁扣32。T型锁扣31和M型锁扣32同样也有助于避免模塑空洞形成在引线框14的模塑面板边缘上。
图6b是表明模塑锁固和防止空洞(antivoiding)的特征的引线框14的平面示意图,该特征是在晶粒座10的边缘处以向内的槽口特征33的形式存在,其形状为半圆(semi-circular)。该半圆的形状在防止模塑空洞方面表现出了优良的性能。
图6c表明了晶粒座10上的另一种模塑锁固特征,其中,整个晶粒座10被多个小块体34所组成。当每个小块体34在蚀刻区域16被填充混合料25所包围时,每个小块体可以用作为一个填充混合料25的锁定结构。
图6d表明用作为锁定结构以将填充混合料锁定到基体材料上的露出的系杆(tie bars)35。每个露出的系杆35将晶粒座10连接到角落的引线上,系杆35较佳地设置在每个晶粒座10的边角处。当晶粒座10为大的晶粒尺寸所设计时,它将极其有用。而且,图6a和图6d的结构能够结合以实现更好的引线框性能。
图6e是引线框14上没有金属晶粒座10的引线框14的平面示意图。代替金属晶粒座10,安装在引线框14上的晶粒将会直接安放在晶粒座位置处的填充混合料上,如上所述,该填充混合料已经被引入到引线框14的蚀刻区域16上。
因此,本发明此处相应地公开了一种用于制造引线框的方法,首先从基体材料的一个侧面蚀刻基体材料,并将诸如模塑混合料或填孔油墨之类的填充混合料应用作为锁固的引线框图案,以固定晶粒座和引线。基体材料然后从相对的一侧被蚀刻以曝露处填充混合料。这样大大提高了引线框的引线数量,并也减少了最终的封装件的厚度。
本发明也公开了一种全新的引线框,其使用诸如模塑混合料或填孔油墨之类的填充混合料来锁固引线框图案,和现有的方法相比,藉此显著地提高了引线数量,并减少了封装件的厚度。本发明较佳实施例使得具有厚度低至2密耳(mil,千分之一英寸)的更薄的引线框的生产成为可能。本发明的工艺也使得引线框和与其锁定的填充混合料之间的良好附着成为可能。
应该认识到,上面引述的各种工艺的具体说明,例如所使用的光阻材料、模塑混合料、填孔油墨、印刷阻剂和带体的类型,蚀刻基体材料以形成引线框的工艺,模塑或填孔油墨以在引线和晶粒座之间形成互锁的工艺,用于移除模塑渗出的溢料去除工艺和沉积镀覆层的工艺,均仅仅为了阐述的目的而被提供,并且,提供来获得等效结果的其他的工艺和材料可以来代替。
本发明的原理已经特别地结合此处所公开的方法得到了演示,此处描述的本发明在所具体描述的内容基础上很容易产生变化、修正和/或补充,可以理解的是所有这些变化、修正和/或补充都包括在本发明的上述描述的精神和范围内。
Claims (20)
1.一种制造引线框的方法,其包含有以下步骤:
提供具有平坦的第一侧面和第二侧面的基体材料;
从该第一侧面处有选择地蚀刻基体材料到预定的蚀刻水平线,以创造蚀刻区域,所述的蚀刻区域为多行排列;
使用不导电的填充混合料在所述的基体材料的第一侧面上填充该蚀刻区域;以及
从第二侧面蚀刻基体材料到蚀刻水平线,以在第二侧面上暴露出该填充混合料;
其中在将该填充混合料暴露后的第一侧面和第二侧面上的没有该填充混合料的区域上形成导电的镀覆层。
2.如权利要求1所述的方法,其中,该蚀刻水平线大体位于基体材料的一半厚度位置处。
3.如权利要求1所述的方法,其中,该填充混合料包含有填孔油墨。
4.如权利要求3所述的方法,其中,使用填充混合料填充该蚀刻区域的步骤包含有以下的步骤:将所述的填孔油墨印刷在该蚀刻区域上。
5.如权利要求1所述的方法,其中,该填充混合料包含有模塑混合料。
6.如权利要求1所述的方法,该方法还包含有以下的步骤:
在引入填充混合料之后,从基体材料的第一侧面移除多余的填充混合料。
7.如权利要求1所述的方法,该方法还包含有以下的步骤:
在从第二侧面蚀刻基体材料的同时,覆盖基体材料的第一侧面,此时第二侧面没有被覆盖。
8.如权利要求7所述的方法,该方法还包含有以下的步骤:
在蚀刻第二侧面之后,在基体材料的第一侧面和第二侧面上没有被填充混合料填充的区域沉积镀覆层。
9.如权利要求1所述的方法,其中,该基体材料的大体整个第二侧面在没有可选择的蚀刻的情况下被蚀刻到蚀刻水平线,以在第二侧面上曝露填充混合料。
10.如权利要求1所述的方法,该方法还包含有以下的步骤:
在蚀刻第二侧面之前,覆盖基体材料的第二侧面,并在基体材料的第一侧面的没有该填充混合料的区域上沉积镀覆层。
11.如权利要求10所述的方法,该方法还包含有以下的步骤:
在蚀刻基体材料的第二侧面之前,覆盖已经被镀覆的基体材料的第一侧面。
12.如权利要求11所述的方法,该方法还包含有以下的步骤:
在蚀刻基体材料的第二侧面之后,在第二侧面上沉积一个或多个镀覆层。
13.一种引线框,其包含有:
基体材料,其具有大体平坦的第一侧面和第二侧面,该基体材料还规定有一个或一个以上的晶粒座和大量的引线,所述引线成多行排列,该晶粒座和引线通过基体材料的蚀刻区域被分开;
在第一侧面和第二侧面上的晶粒座和引线上形成导电的镀覆层;
不导电的填充混合料,其形成在基体材料的蚀刻区域,以锁定该晶粒座和引线,从第一侧面和第二侧面都暴露出该填充混合料;
其中该填充混合料被如此形成以便于它和所述的基体材料平坦的第一侧面和第二侧面大体齐平。
14.如权利要求13所述的引线框,其包含有:
锁定结构,其位于基体材料上,该锁定结构包含有沿着晶粒座的边缘设置的多个槽口,该槽口将填充混合料锁定到基体材料上。
15.如权利要求14所述的引线框,其中,该槽口包括半圆形或四边形的形状。
16.如权利要求13所述的引线框,其包含有:锁定结构,其位于基体材料上,该锁定结构包含有将晶粒座和引线相连的系杆,该系杆将填充混合料锁定到基体材料上。
17.如权利要求13所述的引线框,其中,每个晶粒座包含有多个由填充混合料所包围的小块体,该小块体将填充混合料锁定到晶粒座上。
18.如权利要求13所述的引线框,其包含有:锁定结构,其位于基体材料上,该锁定结构包含有多个沿着蚀刻区域的外围边缘设置的缺口,该缺口将填充混合料锁定到基体材料上。
19.如权利要求18所述的引线框,其中,该多个缺口大体呈T形或M形。
20.一种引线框,其包含有:
基体材料,其具有大体平坦的第一侧面和第二侧面,该基体材料还规定有一个或一个以上的晶粒座和大量的引线,所述引线成多行排列,该晶粒座和引线通过基体材料的蚀刻区域被分开;
在第一侧面和第二侧面上的晶粒座和引线上形成导电的镀覆层;不导电的填充混合料,其形成在基体材料的蚀刻区域,以锁定该晶粒座和引线,从第一侧面和第二侧面都暴露出该填充混合料;以及
锁定结构,其为缺口的形式,该缺口沿着蚀刻区域的外围边缘设置,将填充混合料锁定到基体材料上。
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US8124447B2 (en) * | 2009-04-10 | 2012-02-28 | Advanced Semiconductor Engineering, Inc. | Manufacturing method of advanced quad flat non-leaded package |
JP5529494B2 (ja) * | 2009-10-26 | 2014-06-25 | 株式会社三井ハイテック | リードフレーム |
CN101840902B (zh) * | 2010-04-30 | 2011-06-15 | 江苏长电科技股份有限公司 | 芯片直接置放引线框结构及其生产方法 |
US9805956B2 (en) * | 2013-01-23 | 2017-10-31 | Asm Technology Singapore Pte Ltd | Lead frame and a method of fabrication thereof |
US11291146B2 (en) | 2014-03-07 | 2022-03-29 | Bridge Semiconductor Corp. | Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same |
US10153424B2 (en) * | 2016-08-22 | 2018-12-11 | Rohm Co., Ltd. | Semiconductor device and mounting structure of semiconductor device |
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