CN101221992B - 多层膜-纳米线复合物、双面型和串联型太阳能电池 - Google Patents

多层膜-纳米线复合物、双面型和串联型太阳能电池 Download PDF

Info

Publication number
CN101221992B
CN101221992B CN2008100029752A CN200810002975A CN101221992B CN 101221992 B CN101221992 B CN 101221992B CN 2008100029752 A CN2008100029752 A CN 2008100029752A CN 200810002975 A CN200810002975 A CN 200810002975A CN 101221992 B CN101221992 B CN 101221992B
Authority
CN
China
Prior art keywords
layer
photovoltaic device
multilayer film
junction
deck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008100029752A
Other languages
English (en)
Chinese (zh)
Other versions
CN101221992A (zh
Inventor
B·A·科里瓦尔
L·察卡拉科斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CN101221992A publication Critical patent/CN101221992A/zh
Application granted granted Critical
Publication of CN101221992B publication Critical patent/CN101221992B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/76—Superlattice with graded effective bandgap, e.g. "chirp-graded" superlattice
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Landscapes

  • Photovoltaic Devices (AREA)
CN2008100029752A 2007-01-11 2008-01-11 多层膜-纳米线复合物、双面型和串联型太阳能电池 Expired - Fee Related CN101221992B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/622,275 US7977568B2 (en) 2007-01-11 2007-01-11 Multilayered film-nanowire composite, bifacial, and tandem solar cells
US11/622275 2007-01-11

Publications (2)

Publication Number Publication Date
CN101221992A CN101221992A (zh) 2008-07-16
CN101221992B true CN101221992B (zh) 2012-05-09

Family

ID=39304810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100029752A Expired - Fee Related CN101221992B (zh) 2007-01-11 2008-01-11 多层膜-纳米线复合物、双面型和串联型太阳能电池

Country Status (4)

Country Link
US (1) US7977568B2 (enExample)
EP (1) EP1944811A3 (enExample)
JP (1) JP2008182226A (enExample)
CN (1) CN101221992B (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294025B2 (en) 2002-06-08 2012-10-23 Solarity, Llc Lateral collection photovoltaics
WO2008156421A2 (en) 2007-06-19 2008-12-24 Qunano Ab Nanowire-based solar cell structure
CN101842909A (zh) * 2007-07-19 2010-09-22 加利福尼亚技术学院 半导体的有序阵列结构
JP2010538464A (ja) 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
US8551558B2 (en) 2008-02-29 2013-10-08 International Business Machines Corporation Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures
US8592675B2 (en) * 2008-02-29 2013-11-26 International Business Machines Corporation Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures
WO2009137241A2 (en) 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8519379B2 (en) * 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US20150075599A1 (en) * 2013-09-19 2015-03-19 Zena Technologies, Inc. Pillar structured multijunction photovoltaic devices
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8229255B2 (en) * 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8299472B2 (en) * 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
RU2383083C1 (ru) * 2008-11-05 2010-02-27 Институт физики полупроводников Сибирского отделения Российской академии наук Солнечный элемент (варианты)
PT2351100T (pt) * 2008-11-14 2020-04-21 Bandgap Eng Inc Dispositivos nanoestruturados
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
WO2010071658A1 (en) * 2008-12-19 2010-06-24 Hewlett-Packard Development Company, Hewlett-Packard Development Company, L.P. Photovoltaic structure and method of fabrication employing nanowire on stub
US20100200065A1 (en) * 2009-02-12 2010-08-12 Kyu Hyun Choi Photovoltaic Cell and Fabrication Method Thereof
US20100206367A1 (en) * 2009-02-18 2010-08-19 Korea Institute Of Industrial Technology Method for fabricating silicon nano wire, solar cell including silicon nano wire and method for fabricating solar cell
KR101086074B1 (ko) 2009-02-18 2011-11-23 한국생산기술연구원 실리콘 나노 와이어 제조 방법, 실리콘 나노 와이어를 포함하는 태양전지 및 태양전지의 제조 방법
WO2010120233A2 (en) * 2009-04-15 2010-10-21 Sol Voltaics Ab Multi-junction photovoltaic cell with nanowires
US20100269895A1 (en) * 2009-04-27 2010-10-28 Katherine Louise Smith Multijunction photovoltaic structure with three-dimensional subcell
US8461451B2 (en) * 2009-06-11 2013-06-11 Sharp Kabushiki Kaisha Vertical junction tandem/multi-junction PV device
US20120192934A1 (en) * 2009-06-21 2012-08-02 The Regents Of The University Of California Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof
CN101820006B (zh) * 2009-07-20 2013-10-02 湖南共创光伏科技有限公司 高转化率硅基单结多叠层pin薄膜太阳能电池及其制造方法
US20110083728A1 (en) * 2009-10-14 2011-04-14 Palo Alto Research Center Incorporated Disordered Nanowire Solar Cell
JP2011135058A (ja) * 2009-11-30 2011-07-07 Honda Motor Co Ltd 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法
WO2011066570A2 (en) * 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
US20110162701A1 (en) * 2010-01-03 2011-07-07 Claudio Truzzi Photovoltaic Cells
WO2011082379A1 (en) * 2010-01-03 2011-07-07 Alchimer, S.A. Solar cells
KR20110080591A (ko) * 2010-01-06 2011-07-13 삼성전자주식회사 나노와이어를 이용한 태양전지 및 그 제조방법
WO2011156042A2 (en) * 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
TWI460865B (zh) * 2010-04-15 2014-11-11 Nat Univ Tsing Hua 染料敏化太陽能電池之陽極材料以及其製備方法
JP5626847B2 (ja) * 2010-04-22 2014-11-19 日本電信電話株式会社 ナノ構造体およびその製造方法
KR101652402B1 (ko) * 2010-05-26 2016-08-30 삼성전자주식회사 나노와이어 구조의 태양전지 및 제조방법
JP5745622B2 (ja) * 2010-05-31 2015-07-08 インダストリー−ユニバーシティーコオペレーション ファウンデーション ハンヤン ユニバーシティー イーアールアイシーエー キャンパス 太陽電池およびその製造方法
US8659037B2 (en) 2010-06-08 2014-02-25 Sundiode Inc. Nanostructure optoelectronic device with independently controllable junctions
US8476637B2 (en) 2010-06-08 2013-07-02 Sundiode Inc. Nanostructure optoelectronic device having sidewall electrical contact
US8431817B2 (en) * 2010-06-08 2013-04-30 Sundiode Inc. Multi-junction solar cell having sidewall bi-layer electrical interconnect
US20130192663A1 (en) * 2010-09-15 2013-08-01 Stephen J. Fonash Single and multi-junction light and carrier collection management cells
US8945794B2 (en) 2010-11-12 2015-02-03 Faris Modawar Process for forming silver films on silicon
US20140096816A1 (en) * 2010-12-22 2014-04-10 Harry A. Atwater Heterojunction microwire array semiconductor devices
WO2013106000A1 (en) * 2011-02-16 2013-07-18 Caelux Corporation Wire array solar cells employing multiple junctions
JP5920758B2 (ja) * 2011-03-02 2016-05-18 本田技研工業株式会社 ナノワイヤ太陽電池
WO2012124807A1 (ja) * 2011-03-16 2012-09-20 本田技研工業株式会社 多接合太陽電池及びその製造方法
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
US9545612B2 (en) 2012-01-13 2017-01-17 California Institute Of Technology Solar fuel generator
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
WO2013152043A1 (en) 2012-04-02 2013-10-10 California Institute Of Technology Solar fuels generator
WO2013152132A1 (en) 2012-04-03 2013-10-10 The California Institute Of Technology Semiconductor structures for fuel generation
CN104603952B (zh) 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
KR101894266B1 (ko) * 2012-09-03 2018-09-05 삼성전자 주식회사 탄소나노튜브를 이용한 태양전지
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
US9082911B2 (en) * 2013-01-28 2015-07-14 Q1 Nanosystems Corporation Three-dimensional metamaterial device with photovoltaic bristles
WO2014127002A1 (en) * 2013-02-14 2014-08-21 Northeastern University Solar cells containing metal oxides
CN103346214B (zh) * 2013-07-03 2016-04-06 上海交通大学 一种硅基径向同质异质结太阳电池及其制备方法
US9190542B1 (en) * 2013-11-27 2015-11-17 Sandia Corporation Photovoltaic cell with light trapping for enhanced efficiency
CN104091850A (zh) * 2014-06-03 2014-10-08 苏州大学 一种非晶硅纳米线微晶硅薄膜双结太阳能电池
EP3016148A1 (en) * 2014-10-28 2016-05-04 Sol Voltaics AB Dual layer photovoltaic device
CN104576802A (zh) * 2014-12-26 2015-04-29 电子科技大学 基于硅薄膜和硅纳米线异质结的复合电池及其制备方法
US11189432B2 (en) 2016-10-24 2021-11-30 Indian Institute Of Technology, Guwahati Microfluidic electrical energy harvester
CN106992217A (zh) * 2017-04-06 2017-07-28 蚌埠玻璃工业设计研究院 一种太阳能电池用具有光转化增透功能的超白浮法玻璃
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
RU2684128C1 (ru) * 2018-04-06 2019-04-04 Общество с ограниченной ответственностью "Научно технический центр "Новые технологии" Изделие с покрытием из карбида кремния и способ изготовления изделия с покрытием из карбида кремния
CN109755369A (zh) * 2019-01-04 2019-05-14 浙江大学 硅基ⅲ-ⅴ族半导体异质纳米柱电致发光器件及制备方法
CN112071924B (zh) * 2020-08-04 2022-04-01 深圳市奥伦德元器件有限公司 一种红外探测器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1734793A (zh) * 2005-09-02 2006-02-15 中国科学院研究生院 纳米晶硅/单晶硅异质结太阳能电池及其制备方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079124A (en) 1976-04-21 1978-03-14 Medi-Physics, Inc. Method of preparing X-ray contrast media containing ores of hafnium, tantalum and tungsten
DE2639841C3 (de) * 1976-09-03 1980-10-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Solarzelle und Verfahren zu ihrer Herstellung
US4332974A (en) * 1979-06-28 1982-06-01 Chevron Research Company Multilayer photovoltaic cell
JPS6293983A (ja) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd 光起電力装置
JPS63318167A (ja) * 1987-06-19 1988-12-27 Sharp Corp 電力用非晶質太陽電池装置
JPH01290267A (ja) * 1988-05-18 1989-11-22 Fuji Electric Co Ltd 光電変換素子の製造方法
JP2692964B2 (ja) * 1989-07-14 1997-12-17 三洋電機株式会社 太陽電池
DE3934351A1 (de) 1989-10-14 1991-04-18 Studiengesellschaft Kohle Mbh Verfahren zur herstellung von mikrokristallinen bis amorphen metall- bzw. legierungspulvern und ohne schutzkolloid in organischen solventien geloesten metallen bzw. legierungen
JP2719230B2 (ja) 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
GB9200391D0 (en) 1992-01-09 1992-02-26 Nycomed As Improvements in or relating to contrast agents
US6417244B1 (en) 1993-04-13 2002-07-09 Southwest Research Institute Metal oxide compositions and methods
US6696585B1 (en) 1993-04-13 2004-02-24 Southwest Research Institute Functionalized nanoparticles
DE4315959C2 (de) * 1993-05-12 1997-09-11 Max Planck Gesellschaft Verfahren zur Herstellung einer strukturierten Schicht eines Halbleitermaterials sowie einer Dotierungsstruktur in einem Halbleitermaterial unter Einwirkung von Laserstrahlung
US5665331A (en) 1995-01-10 1997-09-09 Nanosystems L.L.C. Co-microprecipitation of nanoparticulate pharmaceutical agents with crystal growth modifiers
US5667767A (en) 1995-07-27 1997-09-16 Micro Therapeutics, Inc. Compositions for use in embolizing blood vessels
JP3876021B2 (ja) * 1995-08-22 2007-01-31 松下電器産業株式会社 シリコン構造体、その製造方法及びその製造装置、並びにシリコン構造体を用いた太陽電池
US6645464B1 (en) 1998-07-30 2003-11-11 James F. Hainfeld Loading metal particles into cell membrane vesicles and metal particular use for imaging and therapy
US6198091B1 (en) * 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration
US6203778B1 (en) 1998-12-08 2001-03-20 The Regents Of The University Of California Particulate radiopaque contrast agent for diagnostic imaging and microvascular characterization
US6660248B2 (en) 2000-11-10 2003-12-09 William Marsh Rice University Fullerene (C60)-based X-ray contrast agent for diagnostic imaging
AU2002351240A1 (en) 2002-03-08 2003-09-22 James Hainfeld Gold nanoparticles used for x-rays imaging
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US6969897B2 (en) * 2002-12-10 2005-11-29 Kim Ii John Optoelectronic devices employing fibers for light collection and emission
US20050072456A1 (en) * 2003-01-23 2005-04-07 Stevenson Edward J. Integrated photovoltaic roofing system
US7901656B2 (en) 2003-03-21 2011-03-08 Wayne State University Metal oxide-containing nanoparticles
JP4394366B2 (ja) * 2003-03-26 2010-01-06 時夫 中田 両面受光太陽電池
US7462774B2 (en) * 2003-05-21 2008-12-09 Nanosolar, Inc. Photovoltaic devices fabricated from insulating nanostructured template
US20070031339A1 (en) 2003-11-28 2007-02-08 Oskar Axelsson Contrast agents
JP4389652B2 (ja) * 2004-04-30 2009-12-24 オムロン株式会社 電磁継電器
KR100604976B1 (ko) 2004-09-03 2006-07-28 학교법인연세대학교 다작용기 리간드로 안정화된 수용성 나노입자
EP1824521B1 (en) 2004-11-19 2015-01-07 Koninklijke Philips N.V. Ultrasound contrast agents for molecular imaging
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US20060207467A1 (en) 2005-03-19 2006-09-21 Bailey Samuel W Low voltage pyrotechnic igniter assembly
US20060270229A1 (en) 2005-05-27 2006-11-30 General Electric Company Anodized aluminum oxide nanoporous template and associated method of fabrication
US7943847B2 (en) * 2005-08-24 2011-05-17 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanoscale cometal structures
US7635600B2 (en) 2005-11-16 2009-12-22 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
JP2007324324A (ja) * 2006-05-31 2007-12-13 Sumitomo Electric Ind Ltd 太陽電池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1734793A (zh) * 2005-09-02 2006-02-15 中国科学院研究生院 纳米晶硅/单晶硅异质结太阳能电池及其制备方法

Also Published As

Publication number Publication date
US7977568B2 (en) 2011-07-12
EP1944811A2 (en) 2008-07-16
JP2008182226A (ja) 2008-08-07
US20080169017A1 (en) 2008-07-17
EP1944811A3 (en) 2013-10-02
CN101221992A (zh) 2008-07-16

Similar Documents

Publication Publication Date Title
CN101221992B (zh) 多层膜-纳米线复合物、双面型和串联型太阳能电池
CN101221993B (zh) 纳米壁太阳能电池和光电子器件
AU2007234548B8 (en) Amorphous-crystalline tandem nanostructured solar cells
JP6975368B1 (ja) 太陽電池及び太陽電池モジュール
CN101183689B (zh) 分级混合式非晶硅纳米线太阳能电池
CN101136444B (zh) 光伏器件，其制造方法及含该光伏器件的太阳能电池
EP1892769A2 (en) Single conformal junction nanowire photovoltaic devices
WO2012018649A2 (en) Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
CN106935675A (zh) 包含异质结的光电子器件
KR20100030549A (ko) 태양 전지 및 태양전지 제조방법
CN117321776A (zh) 多结太阳能电池
US8969711B1 (en) Solar cell employing nanocrystalline superlattice material and amorphous structure and method of constructing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120509

Termination date: 20140111