CN106992217A - 一种太阳能电池用具有光转化增透功能的超白浮法玻璃 - Google Patents

一种太阳能电池用具有光转化增透功能的超白浮法玻璃 Download PDF

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CN106992217A
CN106992217A CN201710221227.2A CN201710221227A CN106992217A CN 106992217 A CN106992217 A CN 106992217A CN 201710221227 A CN201710221227 A CN 201710221227A CN 106992217 A CN106992217 A CN 106992217A
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glass substrate
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金良茂
甘治平
汤永康
李刚
王东
金克武
王天齐
彭赛奥
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
Bengbu Glass Industry Design and Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
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    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/70Properties of coatings
    • C03C2217/73Anti-reflective coatings with specific characteristics
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明公开一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板,玻璃基板的上、下表面均为平面,玻璃基板的上表面涂覆光转化增透膜层,光转化增透膜层为稀土金属离子掺杂纳米多孔氧化物,其中稀土金属离子的质量百分比含量为0.5~10%;所述稀土金属离子为Sm3+、Eu3+、Y3+与Er3+的其中一种或两种以上,纳米多孔氧化物为纳米多孔二氧化硅、纳米多孔氧化铝、纳米多孔氧化钛与纳米多孔氧化锆的其中一种或两种以上;一方面实现紫外光转化为电池组件可以利用的可见光,同时提高了光学透过率,提升电池转化效率;弥补了现有超白压花玻璃成本高、制作工艺复杂的不足,同时了解决了现有超白浮法玻璃透光率稍偏低、功率增加量不高的问题。

Description

一种太阳能电池用具有光转化增透功能的超白浮法玻璃
技术领域
本发明涉及晶硅光伏电池组件技术领域,具体是一种太阳能电池用具有光转化增透功能的超白浮法玻璃。
背景技术
太阳能利用技术是本世纪能源领域重点研究的一个热门方向,太阳能光伏产业正以较快的速度增长,但是现阶段光伏发电难以推广的一个实际问题是价格太高。因此,要降低太阳能发电的成本,关键是要降低光伏组件的成本。
目前大规模生产的主要是晶硅太阳电池,晶硅太阳电池组件封装必须用到盖板玻璃。现在普遍采用的是一面压有较深花纹的超白压花玻璃,超白压花玻璃的制造是在玻璃板成型后,但玻璃尚未硬化时,用带有特殊花纹的钢棍碾压玻璃表面,形成具有一定形状的花纹玻璃,制作工艺复杂,成本高。使玻璃表面形成花纹的本意是想利用光在花纹中的陷光在增加透射,但是,现在光伏组件的生产中,玻璃上压花的那个面不是朝向太阳的,而是朝向电池板,并且和EVA胶片粘在一起,使得压花玻璃应有的高透光率大打折扣。
发明内容
针对现有技术的不足,本发明提供一种太阳能电池用具有光转化增透功能的超白浮法玻璃。
本发明解决其技术问题所采用的技术方案是:
一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板,玻璃基板的上、下表面均为平面,玻璃基板的上表面涂覆光转化增透膜层,光转化增透膜层为稀土金属离子掺杂纳米多孔氧化物,其中稀土金属离子的质量百分比含量为0.5~10%;所述稀土金属离子为Sm3+、Eu3+、Y3+与Er3+的其中一种或两种以上,纳米多孔氧化物为纳米多孔二氧化硅、纳米多孔氧化铝、纳米多孔氧化钛与纳米多孔氧化锆的其中一种或两种以上。
进一步的,所述光转化增透膜层的折射率为1.0~1.4。
进一步的,所述光转化增透膜层的厚度为60~200nm。
本发明的有益效果是,通过发明转换增透膜,一方面实现紫外光转化为电池组件可以利用的可见光,同时提高了光学透过率,实现转光增透复合功能,从而提升电池转化效率;弥补了现有太阳电池组件封装玻璃中普遍采用的超白压花玻璃成本高、制作工艺复杂的不足,同时了解决了现有超白浮法玻璃透光率稍偏低、功率增加量不高的问题,并且光转化增透膜层硬度更高,与玻璃基板的结合力更强,耐久性更好,另外成本低,便于大规模工业化推广。
附图说明
下面结合附图和实施例对本发明进一步说明:
图1是本发明的示意图。
具体实施方式
实施例一
如图1所示,本发明提供一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板1,玻璃基板1的上、下表面均为平面,玻璃基板1的上表面涂覆光转化增透膜层2,光转化增透膜层2为稀土金属离子掺杂纳米多孔氧化物,;所述稀土金属离子为Sm3+,Sm3+所占质量百分比含量为1%,纳米多孔氧化物为纳米多孔二氧化硅,光转化增透膜层2的厚度为118 nm,光转化增透膜层2的折射率为1.25。
实施例二
如图1所示,本发明提供一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板1,玻璃基板1的上、下表面均为平面,玻璃基板1的上表面涂覆光转化增透膜层2,光转化增透膜层2为稀土金属离子掺杂纳米多孔氧化物,;所述稀土金属离子为Er3+,Er3+所占质量百分比含量为6%,纳米多孔氧化物为纳米多孔氧化铝与纳米多孔氧化锆的复合物,光转化增透膜层2的厚度为92nm,光转化增透膜层2的折射率为1.30。
实施例三
如图1所示,本发明提供一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板1,玻璃基板1的上、下表面均为平面,玻璃基板1的上表面涂覆光转化增透膜层2,光转化增透膜层2为稀土金属离子掺杂纳米多孔氧化物,;所述稀土金属离子为Er3+与Y3+,Er3+与Y3+所占质量百分比含量为3.7%,纳米多孔氧化物为纳米多孔氧化钛,光转化增透膜层2的厚度为160nm,光转化增透膜层2的折射率为1.2。
实施例四
如图1所示,本发明提供一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板1,玻璃基板1的上、下表面均为平面,玻璃基板1的上表面涂覆光转化增透膜层2,光转化增透膜层2为稀土金属离子掺杂纳米多孔氧化物,;所述稀土金属离子为Y3+、Er3+与Eu3+,Y3+、Er3+与Eu3+所占质量百分比含量为2.9%,纳米多孔氧化物为纳米多孔氧化钛与纳米多孔氧化铝的复合物,光转化增透膜层2的厚度为125nm,光转化增透膜层2的折射率为1.23。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。

Claims (3)

1.一种太阳能电池用具有光转化增透功能的超白浮法玻璃,包括玻璃基板,其特征在于,所述玻璃基板的上、下表面均为平面,玻璃基板的上表面涂覆光转化增透膜层,光转化增透膜层为稀土金属离子掺杂纳米多孔氧化物,其中稀土金属离子的质量百分比含量为0.5~10%;所述稀土金属离子为Sm3+、Eu3+、Y3+与Er3+的其中一种或两种以上,纳米多孔氧化物为纳米多孔二氧化硅、纳米多孔氧化铝、纳米多孔氧化钛与纳米多孔氧化锆的其中一种或两种以上。
2.根据权利要求1所述的一种太阳能电池用具有光转化增透功能的超白浮法玻璃,其特征在于,所述光转化增透膜层的折射率为1.0~1.4。
3.根据权利要求1或2所述的一种太阳能电池用具有光转化增透功能的超白浮法玻璃,其特征在于,所述光转化增透膜层的厚度为60~200nm。
CN201710221227.2A 2017-04-06 2017-04-06 一种太阳能电池用具有光转化增透功能的超白浮法玻璃 Pending CN106992217A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101136444A (zh) * 2006-08-25 2008-03-05 通用电气公司 薄膜硅太阳能电池中的纳米线
US20080169017A1 (en) * 2007-01-11 2008-07-17 General Electric Company Multilayered Film-Nanowire Composite, Bifacial, and Tandem Solar Cells
CN201773856U (zh) * 2010-05-26 2011-03-23 信义超白光伏玻璃(东莞)有限公司 太阳能电池的下转换发光结构
CN202513161U (zh) * 2012-01-19 2012-10-31 蚌埠玻璃工业设计研究院 一种用于晶硅光伏电池组件封装的超白浮法玻璃

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101136444A (zh) * 2006-08-25 2008-03-05 通用电气公司 薄膜硅太阳能电池中的纳米线
US20080169017A1 (en) * 2007-01-11 2008-07-17 General Electric Company Multilayered Film-Nanowire Composite, Bifacial, and Tandem Solar Cells
CN201773856U (zh) * 2010-05-26 2011-03-23 信义超白光伏玻璃(东莞)有限公司 太阳能电池的下转换发光结构
CN202513161U (zh) * 2012-01-19 2012-10-31 蚌埠玻璃工业设计研究院 一种用于晶硅光伏电池组件封装的超白浮法玻璃

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