CN101132006A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
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- CN101132006A CN101132006A CNA2007101282147A CN200710128214A CN101132006A CN 101132006 A CN101132006 A CN 101132006A CN A2007101282147 A CNA2007101282147 A CN A2007101282147A CN 200710128214 A CN200710128214 A CN 200710128214A CN 101132006 A CN101132006 A CN 101132006A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP228828/2006 | 2006-08-25 | ||
JP2006228828A JP5142501B2 (ja) | 2006-08-25 | 2006-08-25 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101132006A true CN101132006A (zh) | 2008-02-27 |
CN101132006B CN101132006B (zh) | 2010-11-03 |
Family
ID=39112558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101282147A Expired - Fee Related CN101132006B (zh) | 2006-08-25 | 2007-07-05 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7709315B2 (zh) |
JP (1) | JP5142501B2 (zh) |
CN (1) | CN101132006B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102315174A (zh) * | 2011-09-28 | 2012-01-11 | 上海宏力半导体制造有限公司 | 含分离栅结构的sonos闪存存储器及其制作方法、操作方法 |
CN102339833A (zh) * | 2010-07-21 | 2012-02-01 | 中国科学院微电子研究所 | 具有高速低压操作的高可靠分裂栅非挥发性存储器结构 |
CN103972177A (zh) * | 2013-01-25 | 2014-08-06 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
CN110544617A (zh) * | 2018-05-28 | 2019-12-06 | 联华电子股份有限公司 | 周边电路区内的氧化层的制作方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4659527B2 (ja) * | 2005-06-20 | 2011-03-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7687360B2 (en) * | 2006-12-22 | 2010-03-30 | Spansion Llc | Method of forming spaced-apart charge trapping stacks |
US7611941B1 (en) * | 2008-06-18 | 2009-11-03 | Infineon Technologies Ag | Method for manufacturing a memory cell arrangement |
US20100117141A1 (en) * | 2008-11-13 | 2010-05-13 | Samsung Electronics Co., Ltd. | Memory cell transistors having limited charge spreading, non-volatile memory devices including such transistors, and methods of formation thereof |
KR20100076227A (ko) * | 2008-12-26 | 2010-07-06 | 주식회사 동부하이텍 | 반도체 소자 및 그 제조 방법 |
JP5519154B2 (ja) * | 2009-01-09 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010287614A (ja) * | 2009-06-09 | 2010-12-24 | Renesas Electronics Corp | 半導体装置の解析方法、設計方法、設計支援プログラム、及び設計支援装置 |
US10622449B2 (en) | 2012-04-05 | 2020-04-14 | X-Fab Semiconductor Foundries Gmbh | Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device |
WO2013149669A1 (en) * | 2012-04-05 | 2013-10-10 | X-Fab Semiconductor Foundries Ag | A method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device |
US8722488B2 (en) * | 2012-04-20 | 2014-05-13 | United Microelectronics Corp. | Method of fabricating semiconductor device |
US8822289B2 (en) * | 2012-12-14 | 2014-09-02 | Spansion Llc | High voltage gate formation |
US8895397B1 (en) * | 2013-10-15 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Methods for forming thin film storage memory cells |
JP6554098B2 (ja) * | 2014-06-30 | 2019-07-31 | 楽天株式会社 | 情報処理装置、情報処理方法、及び情報処理プログラム |
JP6275920B2 (ja) * | 2015-03-30 | 2018-02-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001085686A (ja) * | 1999-09-13 | 2001-03-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP4547749B2 (ja) | 1999-09-29 | 2010-09-22 | ソニー株式会社 | 不揮発性半導体記憶装置 |
JP2001267564A (ja) * | 2000-03-22 | 2001-09-28 | Toshiba Corp | 半導体装置と半導体装置の製造方法 |
JP4083975B2 (ja) * | 2000-12-11 | 2008-04-30 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003046002A (ja) | 2001-07-26 | 2003-02-14 | Sony Corp | 不揮発性半導体メモリ装置およびその動作方法 |
JP2004186663A (ja) * | 2002-10-09 | 2004-07-02 | Sharp Corp | 半導体記憶装置 |
JP3664161B2 (ja) | 2002-10-30 | 2005-06-22 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
US7001814B1 (en) * | 2003-05-16 | 2006-02-21 | Advanced Micro Devices, Inc. | Laser thermal annealing methods for flash memory devices |
JP2004363122A (ja) | 2003-05-30 | 2004-12-24 | Seiko Epson Corp | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の製造方法 |
JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
JP2007110024A (ja) * | 2005-10-17 | 2007-04-26 | Sharp Corp | 半導体記憶装置 |
-
2006
- 2006-08-25 JP JP2006228828A patent/JP5142501B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-05 CN CN2007101282147A patent/CN101132006B/zh not_active Expired - Fee Related
- 2007-07-05 US US11/773,842 patent/US7709315B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102339833A (zh) * | 2010-07-21 | 2012-02-01 | 中国科学院微电子研究所 | 具有高速低压操作的高可靠分裂栅非挥发性存储器结构 |
CN102339833B (zh) * | 2010-07-21 | 2013-04-24 | 中国科学院微电子研究所 | 具有高速低压操作的高可靠分裂栅非挥发性存储器结构 |
CN102315174A (zh) * | 2011-09-28 | 2012-01-11 | 上海宏力半导体制造有限公司 | 含分离栅结构的sonos闪存存储器及其制作方法、操作方法 |
CN102315174B (zh) * | 2011-09-28 | 2016-09-28 | 上海华虹宏力半导体制造有限公司 | 含分离栅结构的sonos闪存存储器及其制作方法、操作方法 |
CN103972177A (zh) * | 2013-01-25 | 2014-08-06 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
CN103972177B (zh) * | 2013-01-25 | 2018-03-30 | 瑞萨电子株式会社 | 半导体器件的制造方法 |
CN110544617A (zh) * | 2018-05-28 | 2019-12-06 | 联华电子股份有限公司 | 周边电路区内的氧化层的制作方法 |
CN110544617B (zh) * | 2018-05-28 | 2021-11-02 | 联华电子股份有限公司 | 周边电路区内的氧化层的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5142501B2 (ja) | 2013-02-13 |
US20080048249A1 (en) | 2008-02-28 |
CN101132006B (zh) | 2010-11-03 |
US7709315B2 (en) | 2010-05-04 |
JP2008053498A (ja) | 2008-03-06 |
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