CN101065809A - 用于检测薄弱单元的sram测试方法和sram测试配置 - Google Patents
用于检测薄弱单元的sram测试方法和sram测试配置 Download PDFInfo
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- CN101065809A CN101065809A CNA2005800405384A CN200580040538A CN101065809A CN 101065809 A CN101065809 A CN 101065809A CN A2005800405384 A CNA2005800405384 A CN A2005800405384A CN 200580040538 A CN200580040538 A CN 200580040538A CN 101065809 A CN101065809 A CN 101065809A
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- 238000012360 testing method Methods 0.000 title claims abstract description 53
- 238000010998 test method Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000000295 complement effect Effects 0.000 claims abstract description 14
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- 238000012797 qualification Methods 0.000 claims 1
- 230000008859 change Effects 0.000 description 10
- 230000002950 deficient Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
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- 238000005516 engineering process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
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- 230000004913 activation Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0426005.5A GB0426005D0 (en) | 2004-11-26 | 2004-11-26 | Sram test method and sram test arrangement |
GB0426005.5 | 2004-11-26 | ||
PCT/IB2005/053677 WO2006056902A1 (en) | 2004-11-26 | 2005-11-08 | Sram test method and sram test arrangement to detect weak cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101065809A true CN101065809A (zh) | 2007-10-31 |
CN101065809B CN101065809B (zh) | 2011-06-01 |
Family
ID=33561399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800405384A Expired - Fee Related CN101065809B (zh) | 2004-11-26 | 2005-11-08 | 用于检测薄弱单元的sram测试方法和sram测试设备 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7463508B2 (zh) |
EP (1) | EP1834337B1 (zh) |
JP (1) | JP2008522334A (zh) |
KR (1) | KR20070086643A (zh) |
CN (1) | CN101065809B (zh) |
GB (1) | GB0426005D0 (zh) |
TW (1) | TW200632925A (zh) |
WO (1) | WO2006056902A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211668B (zh) * | 2007-12-21 | 2013-07-31 | 上海宏力半导体制造有限公司 | 可获得读取电流的静态随机存储器及其测量方法 |
CN107393595A (zh) * | 2016-05-17 | 2017-11-24 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN115938456A (zh) * | 2023-03-09 | 2023-04-07 | 长鑫存储技术有限公司 | 半导体存储装置的测试方法、装置、设备及介质 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008023334A2 (en) | 2006-08-22 | 2008-02-28 | Nxp B.V. | Method for testing a static random access memory |
CN100470680C (zh) * | 2006-08-30 | 2009-03-18 | 北京兆日科技有限责任公司 | 一种对集成电路关闭内部功能的实现方法 |
JP5144219B2 (ja) * | 2007-11-07 | 2013-02-13 | パナソニック株式会社 | 半導体記憶装置 |
JP5315090B2 (ja) * | 2009-02-27 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置及びその検査方法 |
US8850277B2 (en) * | 2011-07-15 | 2014-09-30 | Synopsys, Inc. | Detecting random telegraph noise induced failures in an electronic memory |
US8611164B2 (en) | 2011-08-01 | 2013-12-17 | International Business Machines Corporation | Device and method for detecting resistive defect |
US9679664B2 (en) * | 2012-02-11 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method and system for providing a smart memory architecture |
CN102998607A (zh) * | 2012-11-29 | 2013-03-27 | 上海集成电路研发中心有限公司 | 一种测量和表征mos晶体管器件失配特性的方法及系统 |
US9412469B1 (en) | 2015-02-13 | 2016-08-09 | Apple Inc. | Weak bit detection using on-die voltage modulation |
US9959912B2 (en) | 2016-02-02 | 2018-05-01 | Qualcomm Incorporated | Timed sense amplifier circuits and methods in a semiconductor memory |
US9779802B1 (en) | 2016-06-30 | 2017-10-03 | National Tsing Hua University | Memory apparatus and write failure responsive negative bitline voltage write assist circuit thereof |
US11295995B2 (en) * | 2019-09-17 | 2022-04-05 | International Business Machines Corporation | Testing SRAM structures |
US12087387B2 (en) | 2022-03-02 | 2024-09-10 | Samsung Electronics Co., Ltd. | Methods and systems for managing read operation of memory device with single ended read path |
US12045509B2 (en) * | 2022-06-17 | 2024-07-23 | SanDisk Technologies, Inc. | Data storage device with weak bits handling |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56153594A (en) * | 1980-04-28 | 1981-11-27 | Fujitsu Ltd | Test method for storage device |
US5559745A (en) * | 1995-09-15 | 1996-09-24 | Intel Corporation | Static random access memory SRAM having weak write test circuit |
KR100206710B1 (ko) * | 1996-09-23 | 1999-07-01 | 윤종용 | 반도체 메모리 장치의 웨이퍼 번인 테스트 회로 |
US5835429A (en) * | 1997-05-09 | 1998-11-10 | Lsi Logic Corporation | Data retention weak write circuit and method of using same |
US6081465A (en) * | 1998-04-30 | 2000-06-27 | Hewlett-Packard Company | Static RAM circuit for defect analysis |
US6256241B1 (en) * | 2000-03-30 | 2001-07-03 | Intel Corporation | Short write test mode for testing static memory cells |
JP2003532974A (ja) * | 2000-05-09 | 2003-11-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積化されたsramを備える装置及びその装置のテスト方法 |
EP1286358A1 (en) * | 2001-06-22 | 2003-02-26 | STMicroelectronics Limited | Weak bit testing |
US6449200B1 (en) * | 2001-07-17 | 2002-09-10 | International Business Machines Corporation | Duty-cycle-efficient SRAM cell test |
US6778450B2 (en) * | 2002-05-08 | 2004-08-17 | Intel Corporation | Programmable weak write test mode |
US7200057B2 (en) * | 2003-03-12 | 2007-04-03 | Nxp B.V. | Test for weak SRAM cells |
KR100518579B1 (ko) * | 2003-06-05 | 2005-10-04 | 삼성전자주식회사 | 반도체 장치 및 그 테스트 방법 |
US7076376B1 (en) * | 2004-12-28 | 2006-07-11 | Hewlett-Packard Development Company, L.P. | System and method for calibrating weak write test mode (WWTM) |
-
2004
- 2004-11-26 GB GBGB0426005.5A patent/GB0426005D0/en not_active Ceased
-
2005
- 2005-11-08 CN CN2005800405384A patent/CN101065809B/zh not_active Expired - Fee Related
- 2005-11-08 EP EP05802806A patent/EP1834337B1/en not_active Not-in-force
- 2005-11-08 US US11/720,314 patent/US7463508B2/en active Active
- 2005-11-08 WO PCT/IB2005/053677 patent/WO2006056902A1/en active Application Filing
- 2005-11-08 KR KR1020077014472A patent/KR20070086643A/ko not_active Application Discontinuation
- 2005-11-08 JP JP2007542383A patent/JP2008522334A/ja active Pending
- 2005-11-23 TW TW094141126A patent/TW200632925A/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211668B (zh) * | 2007-12-21 | 2013-07-31 | 上海宏力半导体制造有限公司 | 可获得读取电流的静态随机存储器及其测量方法 |
CN107393595A (zh) * | 2016-05-17 | 2017-11-24 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN107393595B (zh) * | 2016-05-17 | 2020-12-29 | 爱思开海力士有限公司 | 半导体存储器件及其弱单元检测方法 |
CN115938456A (zh) * | 2023-03-09 | 2023-04-07 | 长鑫存储技术有限公司 | 半导体存储装置的测试方法、装置、设备及介质 |
Also Published As
Publication number | Publication date |
---|---|
GB0426005D0 (en) | 2004-12-29 |
TW200632925A (en) | 2006-09-16 |
JP2008522334A (ja) | 2008-06-26 |
US20080106956A1 (en) | 2008-05-08 |
KR20070086643A (ko) | 2007-08-27 |
WO2006056902A1 (en) | 2006-06-01 |
CN101065809B (zh) | 2011-06-01 |
US7463508B2 (en) | 2008-12-09 |
EP1834337B1 (en) | 2012-09-12 |
EP1834337A1 (en) | 2007-09-19 |
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