TW200632925A - SRAM test method and SRAM test arrangement - Google Patents

SRAM test method and SRAM test arrangement

Info

Publication number
TW200632925A
TW200632925A TW094141126A TW94141126A TW200632925A TW 200632925 A TW200632925 A TW 200632925A TW 094141126 A TW094141126 A TW 094141126A TW 94141126 A TW94141126 A TW 94141126A TW 200632925 A TW200632925 A TW 200632925A
Authority
TW
Taiwan
Prior art keywords
cell
cut
voltage
wordline
data value
Prior art date
Application number
TW094141126A
Other languages
English (en)
Inventor
De Gyvez Jose De Jesus Pineda
Mohamed Azimane
Andrei Sergueevitch Pavlov
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200632925A publication Critical patent/TW200632925A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW094141126A 2004-11-26 2005-11-23 SRAM test method and SRAM test arrangement TW200632925A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0426005.5A GB0426005D0 (en) 2004-11-26 2004-11-26 Sram test method and sram test arrangement

Publications (1)

Publication Number Publication Date
TW200632925A true TW200632925A (en) 2006-09-16

Family

ID=33561399

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141126A TW200632925A (en) 2004-11-26 2005-11-23 SRAM test method and SRAM test arrangement

Country Status (8)

Country Link
US (1) US7463508B2 (zh)
EP (1) EP1834337B1 (zh)
JP (1) JP2008522334A (zh)
KR (1) KR20070086643A (zh)
CN (1) CN101065809B (zh)
GB (1) GB0426005D0 (zh)
TW (1) TW200632925A (zh)
WO (1) WO2006056902A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9779802B1 (en) 2016-06-30 2017-10-03 National Tsing Hua University Memory apparatus and write failure responsive negative bitline voltage write assist circuit thereof

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* Cited by examiner, † Cited by third party
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JP2010501966A (ja) 2006-08-22 2010-01-21 エヌエックスピー ビー ヴィ スタティックランダムアクセスメモリを検査する方法
CN100470680C (zh) * 2006-08-30 2009-03-18 北京兆日科技有限责任公司 一种对集成电路关闭内部功能的实现方法
JP5144219B2 (ja) * 2007-11-07 2013-02-13 パナソニック株式会社 半導体記憶装置
CN101211668B (zh) * 2007-12-21 2013-07-31 上海宏力半导体制造有限公司 可获得读取电流的静态随机存储器及其测量方法
JP5315090B2 (ja) 2009-02-27 2013-10-16 ルネサスエレクトロニクス株式会社 半導体記憶装置及びその検査方法
US8850277B2 (en) * 2011-07-15 2014-09-30 Synopsys, Inc. Detecting random telegraph noise induced failures in an electronic memory
US8611164B2 (en) 2011-08-01 2013-12-17 International Business Machines Corporation Device and method for detecting resistive defect
US9679664B2 (en) * 2012-02-11 2017-06-13 Samsung Electronics Co., Ltd. Method and system for providing a smart memory architecture
CN102998607A (zh) * 2012-11-29 2013-03-27 上海集成电路研发中心有限公司 一种测量和表征mos晶体管器件失配特性的方法及系统
US9412469B1 (en) 2015-02-13 2016-08-09 Apple Inc. Weak bit detection using on-die voltage modulation
US9959912B2 (en) 2016-02-02 2018-05-01 Qualcomm Incorporated Timed sense amplifier circuits and methods in a semiconductor memory
KR102471601B1 (ko) * 2016-05-17 2022-11-29 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 위크 셀 검출 방법
US11295995B2 (en) * 2019-09-17 2022-04-05 International Business Machines Corporation Testing SRAM structures
US20230409237A1 (en) * 2022-06-17 2023-12-21 Western Digital Technologies, Inc. Data Storage Device With Weak Bits Handling
CN115938456B (zh) * 2023-03-09 2023-07-25 长鑫存储技术有限公司 半导体存储装置的测试方法、装置、设备及介质

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JPS56153594A (en) * 1980-04-28 1981-11-27 Fujitsu Ltd Test method for storage device
US5559745A (en) 1995-09-15 1996-09-24 Intel Corporation Static random access memory SRAM having weak write test circuit
KR100206710B1 (ko) * 1996-09-23 1999-07-01 윤종용 반도체 메모리 장치의 웨이퍼 번인 테스트 회로
US5835429A (en) * 1997-05-09 1998-11-10 Lsi Logic Corporation Data retention weak write circuit and method of using same
US6081465A (en) * 1998-04-30 2000-06-27 Hewlett-Packard Company Static RAM circuit for defect analysis
US6256241B1 (en) * 2000-03-30 2001-07-03 Intel Corporation Short write test mode for testing static memory cells
CN100423133C (zh) * 2000-05-09 2008-10-01 Nxp股份有限公司 包含sram存储器的集成电路及其测试方法
EP1286358A1 (en) * 2001-06-22 2003-02-26 STMicroelectronics Limited Weak bit testing
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US6778450B2 (en) * 2002-05-08 2004-08-17 Intel Corporation Programmable weak write test mode
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KR100518579B1 (ko) * 2003-06-05 2005-10-04 삼성전자주식회사 반도체 장치 및 그 테스트 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9779802B1 (en) 2016-06-30 2017-10-03 National Tsing Hua University Memory apparatus and write failure responsive negative bitline voltage write assist circuit thereof

Also Published As

Publication number Publication date
CN101065809B (zh) 2011-06-01
JP2008522334A (ja) 2008-06-26
EP1834337B1 (en) 2012-09-12
US20080106956A1 (en) 2008-05-08
KR20070086643A (ko) 2007-08-27
GB0426005D0 (en) 2004-12-29
EP1834337A1 (en) 2007-09-19
CN101065809A (zh) 2007-10-31
US7463508B2 (en) 2008-12-09
WO2006056902A1 (en) 2006-06-01

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