CN101048852A - 用于平行晶圆处理反应器的基板载具 - Google Patents
用于平行晶圆处理反应器的基板载具 Download PDFInfo
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- CN101048852A CN101048852A CNA2005800371570A CN200580037157A CN101048852A CN 101048852 A CN101048852 A CN 101048852A CN A2005800371570 A CNA2005800371570 A CN A2005800371570A CN 200580037157 A CN200580037157 A CN 200580037157A CN 101048852 A CN101048852 A CN 101048852A
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Abstract
一种用于平行晶圆处理反应器的基板载具支撑多个基板。基板载具包括多个基座,其可以是在垂直层中水平排列的热板或者圆环。基板安装在位于设置在基座外围周围的两个或多个支架上的各对基座之间。在各对基座之间基板的数量可以相同或者不同,但是在最少一对基座之间数量为两块或更多。
Description
技术领域
本发明的实施方式涉及材料在多重基板上的沉积,更尤其涉及在半导体器件制造期间一种用于化学气相沉积和原子层沉积的装置。
背景技术
半导体器件的制造包括多种材料相继沉积到基板上。该沉积可以使用化学气相沉积(CVD)、原子层沉积(ALD)或者其它方法完成。这些沉积步骤发生在一个或者更经常的发生在一系列腔室内。例如,硅的沉积可以通过将基板设置在工艺腔室内,加热该基板至所需温度,然后将硅烷或者诸如乙硅烷、二氯甲硅烷、四氯化硅的简单的前驱物结合或者不结合其他气体引入到工艺腔室内完成。该前驱物在热基板表面分解,从而引起硅沉积。
期望通过调整工艺腔室内的操作参数以增加产量。该参数包括压力、温度、沉积气体注入速度、净化气体体积等。同时,保持所制造的半导体器件中层的质量也很重要,诸如提供均匀的膜厚度。可以通过使用单个晶圆处理反应器得到优化的质量控制,其包括在单一基板上执行一个或多个工艺步骤的工艺腔室。然而,单一晶圆处理限制了产量。
平行晶圆处理反应器已经得到使用用于增加产量。平行晶圆处理反应器将多个基板设置到同一反应器内的垂直叠式存储器(stack)中。在美国专利No.6,352,593、美国专利No.6,352,594、美国专利申请号No.10/216,079和美国专利申请号No.10/342,151中描述了平行晶圆处理反应器的实施例,并在此引用以上所有专利全文作为参考。
在以上专利和专利申请中所描述的平行晶圆处理反应器允许在多个彼此平行取向的基板上同时沉积硅(或者其他材料)。它引用多重(multi-plenum)控温的垂直注射器,以在整个晶圆上提供均匀气流,并提供产出良好晶圆温度均匀性的恒温晶圆环境。这两个特征使多种膜以相对高的沉积速度以及较宽的工艺空间进行沉积。因此,它为单一晶圆处理腔室提供了多个工艺成效(即,均匀、高质量膜,大工艺窗口,低循环时间,多步连续处理,真空集成处理和灵活性批尺寸),同时每次处理大量基板以增加产量。
发明内容
本发明的实施方式提供用于进一步增加工艺产量的平行晶圆处理反应器的基板载具。在一个实施方式中,基板载具包括在垂直叠式存储器中水平排列的多个基座。基板安装在成对的基座之间,该基座位于设置在基座外围周围的两个或多个支架之上。安装在各对基座之间的基板数量可以相同或者不同,但是在至少一对基座之间为两个或者三个。
本发明的实施方式还提供用于处理基板的平行晶圆处理反应器。反应器包括处理腔室和具有多个水平排列的基座和支架的基板载具,其中所述支架设置在至少一对所述的基座之间,用于支撑至少两块基板。
在本发明的一个实施方式中,各对基座之间的支架包括两个相对的隔离物。晶圆的相对端支撑在这些凸缘上。在本发明的另一实施方式中,各对基座之间的支架包括三个隔离物,排列该三个隔离物使得晶圆的第一、第二和第三端支撑在这些凸缘上。晶圆的第一、第二和第三端在晶圆上具有彼此相隔120°的径向位置。
根据本发明实施方式的基板提供了优于现有技术基板载具设计的某些优点。它们包括增加了给定的恒温区域中基板容量,并通过减少基座数量降低成本。
附图说明
为了获得本发明上述特征的方法并详细理解该方法,将参照在附图中示出的实施方式对本发明的以上概况描述进行具体说明。然而,应该理解附图仅示出本发明的典型实施方式,因此本发明并不局限于该范围,而本发明可包括其他等同的有效实施方式。
图1是可结合本发明的某些特征使用的平行晶圆处理反应器的横截面俯视图;
图2是根据本发明的一个实施方式的基板载具的放大视图;
图3是图2的基板载具的局部放大透视图;
图4是与基座支柱互锁的隔离物的横截面放大视图;
图5是隔离物的透视图;
图6A和图6B示出了由隔离物支撑的晶圆上的间隔点;
图7A-图7C示出了用于基板载具替代结构的局部侧视图;
图8是用于基座替代结构的局部侧视图;
图9是示出采用依据本发明的实施方式所述的基板载具实现的工艺结果曲线图;
图10是具有多个气体注入歧管的平行晶圆处理反应器的横截面俯视图;
图11是固定体积传输机械装置的示意图;
图12是混合清洗方法的流程图;
图13-图15是用于平行晶圆处理反应器的晶圆传送系统的图解。
具体实施方式
图1是可结合本发明某些部件使用的平行晶圆处理反应器10的俯视截面图。反应器10包括围绕处理空间110的四个壁100a和四个壁100b。气体注入歧管200和排气歧管300与相对的壁100b粘接。多重区域加热结构400分别与四侧壁100a粘接。用于保持多个晶圆或者基板的基板载具示为406。
图2提供根据本发明的一个实施方式的基板载具406的放大侧视图。基板载具406一般限定一狭长的柱体。沿着基座407之间的基板载具406纵轴形成开口415。基板404设置在成对基座407之间的开口415中,并安装到在隔离物402上形成的凸缘上。
基座407由一般平面压板417和两个或者更多围绕压板径向设置的分散的柱状构件416构成。设计通过诸如加热元件(未示出)加热压板部分417。为了适应压板417的加热,基座407优选由耐热、高热导性材料构成,诸如涂敷石墨的SiC、涂敷SiC的SiC或者固体SiC。也可以使用多种其它材料,尽管SiC与石墨的各种组合似乎能最优化高温应用。更适宜地,基座407具有比基板404更大的直径。对于一些工艺,诸如热退火或者氧化,基座直径等于基板直径。
基座407起到几个重要的作用。基座407预热工艺气体,并在气流到达基板404之前产生稳流层和稳定热边界层,从而最小化晶圆的边缘效应。基座407的热质量也炒股了基板404的热质量。基座407还有助于控制通过基板载具406的气流,降低伪晶圆的需求。它们还减少了涡流的形成或者可加剧颗粒气相形成的气体再循环区域。
基座407为垂直叠式使得各个压板417一般彼此平行。图3提供了部分基板载具406的放大透视图。在该视图中,清晰示出了单独压板417和柱419。还可以从图3看出,间隔408形成于相邻的各对基座407之间。间隔408在装载和卸载期间用作独立等温腔,其产生均匀辐射率和与基板404图案无关的均匀加热。位于基座407之间的等温腔简化了基于高温测定的温度监控和控制的实施方式。将设置在间隔408之间的基板404迅速加热至工艺温度,同时保持整个基板404上极好的温度均匀性。
与基座407有关的影响工艺性能的几何变量为:(a)各个晶圆上方和下方的间距,(b)基座之间的间隔和(c)基座直径。基板404上方和下方的优选间距一定程度上依赖于工艺。典型地,晶圆上方和下方相等的间距在晶圆两侧产生相同的膜厚度和膜特性。由于晶圆保留沉积之后的平整性,因此这通常是人们所期望的。可以在在工艺流程中的某些时刻将晶圆背面的膜剥离。各个晶圆上方和下方气体的分布主要取决于晶圆上方和下方的间距。随着间距增加,沿着基板载具406通过气体注入歧管200(参见图1)引入的大部分工艺气体流过基板404的正面和背面(而不是基板周围),并因此流入排气歧管300(参见图1)。
对于原位掺杂Si膜,基板和相邻的基座407之间的优选间距是在0.15英寸至0.30英寸的范围内,以确保适量的工艺气体流过基板404而不是在基板404周围。基板404可以远离间隔408的中平面设置,以改变流过基板404的上部的气体与流过各基板404下面气流的比率。间隔408对于基座间隔在0.25英寸至1.25英寸的范围内且直径为13.6英寸的基座保持它们接近黑体特性的等温线(在基座之间最终的间隔408的优选高宽比大约10∶1)。
人们希望在不损失沉积速度、膜均匀性和膜特性的情况下增加基板载具406的加载量。在此通过在各对基座407之间设置不止一个基板404实现加载量的增加。选择各个基板404上方和下方的间距,以达到如上所述的所需的工艺参数要求。通过在临近的基座407之间设置两块、三块、四块或者更多基板404,而不是仅设置一块基板404,可以在不引起反应器10的其它主要参数变化的情况下增加加载量。
图4示出了在基座407之间设置的多个基板404。为了在基座407之间设置多个基板404,凸缘405沿着基板载具406的高度设置。更具体地,三个凸缘405设置在每对基座407之间。凸缘405支撑设置在其上的各个基板404,并在基座407之间设置的隔离物402上形成。在图5中示出了单一的隔离物402。在该设置中,隔离物402与隔离物402一体化的凸缘405和延伸隔离物402整个高度的通孔409。
当在两个邻近的基座407之间使用两个隔离物402时,两个隔离物支撑基板404的相对端。当在两个邻近的基座407之间使用三个隔离物402时,这三个隔离物402支撑彼此等距(120°)的基板404的第一、第二和第三端。图6A示出了当使用两个隔离物402时,基板404的支撑点。图6B示出了当使用三个隔离物402时,基板404的支撑点。
图4还提供了与基板端子419互锁的隔离物402的横截面放大视图。每个隔离物402均与上和下基座407接合。隔离物402的顶部与形成在上基座407的底表面上的凹部接合,隔离物402的底部开口与下基座407的柱419接合。在图4中,示出了在各对基座407之间支撑的三个基板404。可以通过多种方式执行在基座407之间多个基板404的设置。例如,在一些间隙中可以插入单一基板404,而在其它间隙中可以插入多个基板404。因此,在邻近的基座之间的基板404的数量可以随着基板载具406高度而变化。在一个实施方式中,可以在基板载具406的中心区域的各对基座407之间设置较多的基板404,而在基板载具406的两端的各对基座407之间设置少数基板。
图7A、图7B和图7C分别提供了基板载具406A、406B和406C的局部侧视图。配置图7A的基板载具406A以在每个间隙408内保持的两个基板404,并总共保持26块基板。配置图7B的基板载具406B以在每个间隙408内保持三个基板404,并总共保持27块基板。最后,配置图7C的基板载具406C,以在各对基座407之间保持不同数目的基板404,并总共保持31块基板。
可选地,可以在某些的相邻基座407之间选择性地设置用作绝缘体或者热导体的物体。为了降低基板载具406顶部和底部的热损耗,当设置在基板载具406端部的基座407之间时,绝缘体可具有特定值。底部和/或顶部加热器还可以选择性地增大基板载具406底部和/或顶部的热流。
在三个基板404设置在一对基座407之间的情况,最接近任何一个基座407的基板404可以比夹在两个外部基板404之间的基板404更快加热。在图8中示出的本发明的一个实施方式减小了该影响。在该实施方式中,各个基座407’具有环形构造,该环形构造在中心处具有稍微小于基板404直径的圆形开口,并包含薄圆环417’以及与隔离物402互锁的多个柱419’。
在图9中示出了每对基座具有四片晶圆的基板载具406(共50片晶圆)的工艺结果。该结果示出了舟内几处所选位置。该结果显示可以实现膜的良好均匀性。
对于许多CVD和ALD工艺,需要精确控制腔室壁的温度。在许多情形下,理想温度是工艺温度与室温之间的中间温度。在该理想温度下,不应该有前驱物的聚合或者副产物反应,并且膜(如果沉积)必须不间断、低压以及没有粉状物。这些要求通常在接近工艺温度的温度下达到。由于沉积速度一般在较低温度下降低,因此最好将壁温控制到稍微低于工艺温度的值,使得腔室壁的富集速度降低。最终,腔室壁上的富集将足够厚,从而要求腔室清洁。由于为了清洗而去除腔室不可行,而在原位清洗腔室内可能无法除整个沉积膜,因此可以使用覆盖腔室壁的一个或多个可去除的内衬。该内衬可以由包括SiC,涂敷SiC的SiC,涂敷SiC的石墨和阳极铝的各种材料或者包含耐热材料以及诸如SiO2、AlN、聚合物等绝缘材料的复合结构形成。
对于高于300℃的内衬表面温度,优选材料和构成方法是十分接近(0.25mm-0.75mm)保持较低温度的腔室壁的SiC、涂敷SiC的SiC、涂敷SiC的石墨。通过控制内衬和腔室壁之间的间隔,可以充分控制内衬的温度和腔室壁外壳。该小间隔提供热绝缘,但是该间隙通常对于前驱物或者副产物反应积累到该空腔内来说不够大。对于较低的内衬温度,内衬可以与具有介于二者之间的绝缘体的腔室壁接触设置。
内衬在原位(in-situ)清洗和异位(ex-situ)清洗中都非常有利。对于原位清洗,可以通过沉积膜的蚀刻/去除的已知步骤清洗内衬。对于异位清洗,可以去除和清洗或者替换内衬,避免其他腔室硬件的大清洗。
图10示出了具有用作第二气体/前驱物注射器的额外气体注入歧管201的平行晶圆处理反应器10。额外气体注入歧管201与主气体注入歧管在空间上分开。独立控制空间上分开的气体注入歧管200、201的温度,并允许在前驱物传输期间可能化学反应的那些前驱物物理分开。
对于一些应用,固定容积的传输方案对于多种前驱物是必要的。由于固定容积应该位于接近注入的点,空间约束限制了可以接近注射器安装的固定容积数量。在这种情形下,使用多空间隔开注射器简化了集成任务。多重空间隔开注射器提供下列优点:
通过在活跃加热区域外部安装装置改善热管理,从而可以独立控制注射器的温度;
在前驱物传输期间,各种前驱物的独立充气增压,使化学交互作用最小;
由于与传统多口注入相比,在注射器平板中相对较多的孔,在注射器整个表面上气体流速均匀;
允许前驱物的有效引入和排空,同时降低前驱物之间的交叉污染问题;以及
使元件更有效的包装:通过降低复杂性降低传输挥发性前驱物所需要的铅封(plumbing)、节省空间、增加服务途径,并改善可靠性。
扩展在图11中示出的固定容积的传输机械装置,以与额外的操作方式结合。通过靠近注射器设置固定的容积使部分操作方式可行。固定容积传输操作的部分方式详细描述如下:
填充→[提升]→定量给料→[抽吸]:在[]中的步骤是可选的。在该方式中,通过以下步骤完成前驱物通过注射器阀505定量给料到反应空间110的过程:(a)使用蒸-吸(vapor-draw)或者起泡器(bubbler)方式从含有液态前驱物的安瓿填充固定容积510至“充满”压力;(b)通过N2推动气体530将固定容积510提高至最高压力;(c)通过短脉冲将固定容积510中的前驱物排空至或者定量给料到的反应空间110中,在此期间,固定容积510内的反应空间压力随着前驱物传输到反应空间110而降低;以及(d)在重复填充步骤之前,使用泵540抽吸固定容积510至已知压力。在定量给料步骤期间,控制反应空间110的压力,以确保整个晶圆上的均匀表面反应。
填充→推动/定量给料→抽吸:在该方式中,通过以下步骤完成前驱物经过过注射器阀505定量给料到反应空间110的过程:(a)使用蒸-吸或者起泡器方式从含有液态前驱物的安瓿填充固定容积510至“充满”压力;(b)利用N2推动气体530推动,将来自固定容积510的前驱物定量给料到反应空间510。在掺杂步骤期间,控制反应空间110的压力,以确保整个晶圆上均匀的表面反应。在该方式中,通过腔室而不是专用线抽吸固定容积510。
流入腔室:在该方式中,在类似于CVD工艺,在定量给料步骤期间前驱物随着连续的流动流传输到反应空间110。前驱物经由蒸吸或者起泡器方式被吸入到反应空间110。
使用诸如低压质量流量控制器(用于蒸吸)或者质量流量监测器(用于起泡器方式)的流量监测器或者流量控制器525可选择性计量到固定容积510的流量。质量流量监测器525测量载具流中前驱物的流速,并可选地调整载具流或者起泡器的操作条件以保持前驱物的恒定流速。在实际执行中,当额外的固定容积状态指示固定容积510是空闲、绝缘或者密封时,在操作期间可以使用提升或者抽吸。
在此描述的平行晶圆处理反应器10还能使半导体膜外延或者选择性外延沉积。硅和硅锗膜的低温外延和选择性外延沉积对于下一代半导体器件越来越重要。在此描述的平行晶圆处理反应器10可以延伸以实现该类膜的沉积。因为拥有外延处理(epi processing)的几种基本属性,诸如整个晶圆上和整个晶圆负载上掺杂剂的均匀分布、径向传输以及抑制氧化物生长的能力,平行晶圆处理反应器10适宜于外延处理。能外延处理的平行晶圆处理反应器10的属性列出如下:
平行晶圆处理和交叉晶圆气流腔室结构在多晶硅或者α-SiGe膜中产生均匀的掺杂含量(<1原子%)。
位于用于与氯化化学物质兼容的外部铝腔室(由过滤的高纯惰性气体净化环形空腔)内的石英内衬进行原位清洗以及烘烤。柱状石英内衬具有在其外围排列的多个端口。注射器安装在一个端口上,而排气法兰连接到直径相对的端口上。第三端口可以用于容纳感应温度的高温计。不同抽吸的空腔改善了石英内衬内的真空完整性,还控制热量损失到外部铝腔室壁上。
对于可选的预-外延气相清洗,多晶圆的低热质量舟和低热质量、高温度热扩散屏蔽物可以以>50℃/min的速度从600上升到750℃。低热质量、高温度屏蔽物可以在内衬上的端口之间卷绕石英内衬。在反应器的CVD方案中,紧靠石英窗和在屏蔽物之间形成的空腔机械性密封屏蔽物,石英窗由惰性气体清洗。
集成到注射器的基团发生器(例如H)在<750℃的情况预清洗。各种类型的无电极式的放电诸如微波激发的表面波或者隙缝天线激发的电荷构成注射器。表面波放电包括设置在注射器外壳内的电介质管(例如,石英)。该管覆盖在一端,并与真空腔室外部的气源连接。激发表面波的天线设置在电介质管离开腔室的一端。通过该管内维持的等离子体,将供给到该管的气体激发成基团,并且供给到该管的气体通过沿着管长度的细孔的图案退出管,导致沿着舟长度方向的均匀基团通量。该基团资源的多样性可以用于增加基团生成系统的容量或者提供多种类型的基团。
具有气体管线烘烤能力用于所有工艺和净化气体的的使用点(point-of-use)净化器可以在工艺腔室内实现一有效的湿度并让氧气含量<1ppb。
安装到排气口上的涡轮泵实现底压(base pressure)<2×10-6,同时在工艺期间传统高容量泵用于控制腔室压力。
通过装载和卸载晶圆以及在还原(N2/H2)气氛下加热晶圆,从而抑制固有氧化物再生长。
具有大量过量H2的低压(1-10Torr)工艺一般在低于600℃下有益。在这些温度下,沉积速度必须限制到10/min,以保持膜的高质量和选择性。较高次序的硅烷(或者衍生物)在较低温度下也可能是必须的。这些包括乙硅烷、丙硅烷以及具有或者不具有固有碳含量和含碳添加物的相关卤代衍生物。
优选地最后一次HF湿法清洗和工艺起点之间的队列时间<30min。
在包括从反应器表面蚀刻/去除沉积的膜的原位腔室清洗广泛应用于单一晶圆处理反应器。另一清洗方法是工艺腔室打开的异位清洗,沉积膜部分与清洗部分交换,并且向下物理性擦腔室。由于异位清洗包括吹扫腔室、元件替换和在晶圆处理开始之前长时间的腔室验证/调整,因此利用其自身性质的异位清洗很耗时。对于热系统,在吹扫之前与系统冷却和异位清洗后和系统加热相关的辅助操作增加了整体停止工作的时间。如果在晶圆处理期间腔室暴露于有毒气体中,在反应器能打开以服务之前必须执行特定气体的消除程序。对于这些原因,原位腔室清洗比异位腔室清洗有利。
在原位清洗的一个方法中,允许上部腔室的舟处于冷却态,同时蚀刻气体引入到工艺腔室内以将膜从热扩散屏蔽物和内衬(如果装载)蚀刻掉。一旦膜从屏蔽物和内衬蚀刻掉,将舟再引入到工艺腔室内,舟可以原位清洗或者处理能够重新开始。在该类型的反应器中,依据工艺条件以及热扩散屏蔽物和舟之间的温度差,在热扩散屏蔽物上的沉积超出舟上的沉积1.5倍-3.0倍。因此不必像清洗热扩散屏蔽物那样频繁清洗舟。
在图12示出的混合原位清洗方法中,在舟移到上腔室时,密封板用于隔绝工艺和上腔室(步骤610)。一旦密封工艺腔室,热扩散屏蔽物和内衬立即进行原位清洗,以蚀刻掉沉积的膜(步骤620)。与此同时,如果需要的话,可以由预先构造的清洗舟替换该舟(步骤630)。在步骤640中,开启灯,并检查系统。此外沉积有1微米厚的多晶硅预涂层。如前所述,舟不必象热扩散屏蔽物一样频繁清洗。
多种蚀刻气体已经用于原位清洗,包括NF3、原子氟、F2、含氟氯烃、ClF3、HF、HCl等。这些气体适宜于用于在此描述的平行晶圆处理反应器10中,除了必须考虑蚀刻速度、表面温度以及与反应器材料的兼容性之外。非常低的蚀刻速度通常不可接受,因为其转化为非常长的原位清洗时间,大大退化了生产环境中系统的正常工作时间。在高于特定阈值温度下,许多氟化或者氯化气体冲击金属表面、聚合材料和涂层(例如SiC,AlN)。冲击不仅导致碰撞,而且在随后处理期间,低挥发性金属氟化物/氯化物可能保留在反应器中并污染膜。典型的表面温度应该低于300℃,以防止金属表面和SiC的冲击。石英元件相对不受冲击影响,其能维持相当高的温度,而不会受到一点蚀刻。
原子氟可以由多种方法生成。传统方法是将含氟气体流过等离子体源。另外,含氟气体可以引入到等离子体源的等离子体羽流下游(plume downstream)内,在该区域形成在等离子体源中的离子、受激发的原子/分子和基团分解含氟气体从而产生氟原子。设计等离子体源,有目的性地增加等离子羽流的长度。引入等离子体源的羽流反应物可以产生更多对蚀刻有效的分解物质。例如,在CF4的情形下,与部分分解为CF2和F相比,完全分解为CF和F原子可能不太有利于蚀刻SiO2。向等离子源添加清洗气体还可能破坏含有等离子体管的蚀刻的源。在任何情形下,可能脉冲等离子体源,以增强原子氟产生速度。脉冲等离子体源允许在短时间内使用高功率级别,而不用过度加热等离子体源。等离子体脉冲还是控制形成的基团类型的手段。除了使用等离子体源,原子氟还可以通过采用热灯丝产生热性分解含氟气体。
在图13-图15中示出了用于平行晶圆处理反应器10的占地面积小、产量高的晶圆传送装置。在图13中示出了晶圆传送装置的前视图。或者是源或者是处理晶圆目标的FOUP(前开式晶圆盒)可以从FOUP 710的缓冲器随机或依顺序存取晶圆,并且设置在装载口处。高架传输系统(OHT)720或者类似的工厂自动化系统可以在缓冲器710中去除或者放置FOUPs。从FOUP到工艺腔室晶圆传输方式取决于晶圆传送装置的结构。
在图14所示的结构中,通过过滤的干燥N2(或者惰性气体)将晶圆传送装置腔室805和真空隔离室(load lock)吹扫为大气压。具有多端操作装置的双端机械手830的机械臂815的其中之一将多块晶圆850从FOUP传输到内真空隔离室。对于具有52片晶圆容量的工艺腔室850,每个真空隔离室可具有26片晶圆的容量。在完成第一真空隔离室装载之后,将下一含有待处理晶圆的FOUP移到装载口,机械手830将晶圆传输到第二真空隔离室。晶圆传输之后,真空隔离室和晶圆输送腔室805循环抽吸/净化并抽到基本压力或者晶圆传输压力。然后,双端机械手830的第二壁820将来自各个真空隔离室的晶圆移到工艺腔室850。如果工艺腔室850设计为每对基座具有四片晶圆,则可同时移动1、2或者4片晶圆。真空隔离室中内晶圆间距是可调节的,以与FOUP和工艺腔室850中的内晶圆间距匹配。同样,为了降低晶圆传输期间机械手830在z轴的移动,可上下移动FOUP、真空隔离晶圆盒和工艺腔室850内的舟,使得待移动的晶圆与机械手815、820位于同一平面。在装载晶圆之后,将工艺腔室850与晶圆输送腔室805隔离的闸阀关闭并且工艺模块开始晶圆处理。当晶圆处理完成时,将工艺腔室850与晶圆输送腔室805隔离的闸阀打开,晶圆转移到真空隔离室。一旦完成晶圆转移,闸阀关闭,各真空隔离室可以抽吸/净化,以在真空隔离室和晶圆输送腔室805通风至大气压力之前冷却晶圆至可接受的温度(通常<100℃)。然后,晶圆可以转移到各FOUP。通常必须将晶圆返回到从中取出该晶圆的FOUP中。然后,重复该循环,以处理下一批待处理的晶圆。
工艺腔室850从第一批晶圆退出工艺腔室850的时间点开始到下一批晶圆装载到工艺腔室850中的时段保持闲置。因此,待处理的一批晶圆的循环时间是处理时间和总晶圆传送时间的和。对于短工艺,总晶圆传送时间可能超过限制最大有效产量的工艺时间。
图15A示出了一个状态的晶圆传输装置,图15B示出了另一状态的晶圆传输装置。在此处示出的晶圆结构,机械手830同时将任一FOUP中一片或者两片晶圆移动到真空隔离室,但是在真空隔离室和工艺腔室850之间执行脉动交换(ripple swap)。在脉动交换中,在工艺腔室850内处理过的晶圆与来自真空隔离室的未处理晶圆交换。一旦工艺腔室850内所有的晶圆与未处理的晶圆完成交换,工艺腔室再继续处理。当工艺腔室850处理晶圆时,来自真空隔离室的处理过的晶圆更适宜两片同时移到FOUP,下一批待处理的晶圆从FOUP转移(也最适宜两片同时)到真空隔离室。然后,一旦工艺腔室850完成处理,晶圆立即与工艺腔室850内的晶圆交换。在该结构中,一批待处理晶圆的循环时间是处理时间和真空隔离室与工艺腔室850之间的脉动交换持续时间的总和。由于后者仅占总晶圆传送时间的一小部分,所以可以在连续操作中实现较高的产量。在连续操作模式中,完成处理的FOUP立即卸载,并由待处理的FOUP代替。
尽管前述以上描述针对本发明的实施方式,但是在不脱离其基本范围以及以下权利要求所阐述的范围的情况下,可以推导本发明的其他以及进一步实施方式。
Claims (20)
1、一种用于在反应器中支撑多个晶圆的载具,包括:
水平定向的热板构成的垂直叠式存储器;以及
晶圆支架,设置在一对用于支撑至少两个晶圆的热板之间。
2、根据权利要求1所述的载具,其特征在于,所述晶圆支架包括两个隔离物,每个隔离物具有形成在其上用于在相对端支撑所述至少两个晶圆的至少两个凸缘。
3、根据权利要求1所述的载具,其特征在于,在各对热板之间支撑的晶圆的数量是相同的。
4、根据权利要求1所述的载具,其特征在于,在各对热板之间支撑的晶圆的数量是不同的。
5、根据权利要求1所述的载具,其特征在于,所述晶圆支架包括三个隔离物,每个隔离物具有形成在其上用于在晶圆的第一、第二和第三端支撑所述至少两个晶圆的至少两个凸缘。
6、根据权利要求1所述的载具,其特征在于,所述晶圆支架包括插入每对热板之间的至少两个隔离物。
7、一种用于在反应器中支撑多个晶圆的载具,包括:
由水平定向的圆环构成的垂直叠式存储器;以及
设置在一对圆环之间用于支撑至少两个晶圆的晶圆支架。
8、根据权利要求7所述的载具,其特征在于,所述晶圆支架包括两个隔离物,每个隔离物具有形成在其上用于在相对端支撑所述至少两个晶圆的至少两个凸缘。
9、根据权利要求7所述的载具,其特征在于,在各对圆环之间支撑的晶圆的数量是相同的。
10、根据权利要求7所述的载具,其特征在于,在各对圆环之间支撑的晶圆的数量是不同的。
11、根据权利要求7所述的载具,其特征在于,所述晶圆支架包括三个隔离物,每个隔离物具有形成在其上用于在晶圆的第一、第二和第三端支撑所述至少两个晶圆的至少两个凸缘。
12、根据权利要求7所述的载具,其特征在于,所述晶圆支架包括插入在各对圆环之间的至少两个隔离物。
13、一种用于处理基板的反应器,包括:
在其中处理基板的腔室;以及
基板载具,具有多个水平排列的基座和支架,所述支架用于容纳设置在一对所述基座之间的至少两基板。
14、根据权利要求13所述的反应器,其特征在于,所述基座包括热板。
15、根据权利要求13所述的反应器,其特征在于,所述基座包括圆环。
16、根据权利要求13所述的反应器,其特征在于,在各对基座之间支撑的基板的数量是相同的。
17、根据权利要求13所述的反应器,其特征在于,在各对基座之间支撑的基板的数量是不同的。
18、根据权利要求13所述的反应器,其特征在于,所述支架包括两个隔离物,每个隔离物具有形成在其上用于在相对端支撑所述至少两个晶圆的至少两个凸缘。
19、根据权利要求18所述的反应器,其特征在于,所述隔离物与设置在所述隔离物上方的基座上的较低的凹陷接合,并且所述隔离物具有与设置在所述隔离物下方的基座上的上部柱接合的下部开口。
20、根据权利要求13所述的反应器,其特征在于,所述晶圆支架包括三个隔离物,每个隔离物具有形成在其上用于在晶圆的第一、第二和第三端支撑所述至少两个晶圆的至少两个凸缘。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7431585B2 (en) * | 2002-01-24 | 2008-10-07 | Applied Materials, Inc. | Apparatus and method for heating substrates |
JP4272486B2 (ja) * | 2003-08-29 | 2009-06-03 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
US7253084B2 (en) * | 2004-09-03 | 2007-08-07 | Asm America, Inc. | Deposition from liquid sources |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
US7897495B2 (en) * | 2006-12-12 | 2011-03-01 | Applied Materials, Inc. | Formation of epitaxial layer containing silicon and carbon |
US9064960B2 (en) * | 2007-01-31 | 2015-06-23 | Applied Materials, Inc. | Selective epitaxy process control |
US8317449B2 (en) * | 2007-03-05 | 2012-11-27 | Applied Materials, Inc. | Multiple substrate transfer robot |
US20080220150A1 (en) * | 2007-03-05 | 2008-09-11 | Applied Materials, Inc. | Microbatch deposition chamber with radiant heating |
US20090004405A1 (en) * | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Thermal Batch Reactor with Removable Susceptors |
JP5090097B2 (ja) * | 2007-07-26 | 2012-12-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
US7900579B2 (en) | 2007-09-26 | 2011-03-08 | Tokyo Electron Limited | Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other |
JP4971089B2 (ja) * | 2007-09-26 | 2012-07-11 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
US20100047447A1 (en) * | 2008-08-25 | 2010-02-25 | Cook Robert C | Multiple substrate item holder and reactor |
US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
US9175388B2 (en) * | 2008-11-01 | 2015-11-03 | Ultratech, Inc. | Reaction chamber with removable liner |
JP5540498B2 (ja) * | 2008-11-28 | 2014-07-02 | 凸版印刷株式会社 | 成膜方法及び装置 |
US8012876B2 (en) | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
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JP2011187543A (ja) * | 2010-03-05 | 2011-09-22 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2012195562A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法 |
US9748125B2 (en) * | 2012-01-31 | 2017-08-29 | Applied Materials, Inc. | Continuous substrate processing system |
BR112014008177A2 (pt) * | 2012-02-16 | 2017-04-11 | Saint Gobain | caixa de processo, arranjos, e métodos para processar substratos revestidos |
KR20130095495A (ko) * | 2012-02-20 | 2013-08-28 | 삼성전자주식회사 | 반도체 기판 적재용 보트 |
US9530675B2 (en) * | 2012-09-19 | 2016-12-27 | Stmicroelectronics Pte Ltd | Wafer handling station including cassette members with lateral wafer confining brackets and associated methods |
JP5977274B2 (ja) * | 2013-03-21 | 2016-08-24 | 東京エレクトロン株式会社 | バッチ式縦型基板処理装置および基板保持具 |
FI125222B (en) | 2013-03-22 | 2015-07-15 | Beneq Oy | Apparatus for processing two or more substrates in a batch process |
JP6313972B2 (ja) * | 2013-12-26 | 2018-04-18 | 川崎重工業株式会社 | エンドエフェクタおよび基板搬送ロボット |
DE102015004352A1 (de) * | 2015-04-02 | 2016-10-06 | Centrotherm Photovoltaics Ag | Waferboot und Behandlungsvorrichtung für Wafer |
KR102145950B1 (ko) * | 2015-10-04 | 2020-08-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 지지체 및 배플 장치 |
US10643876B2 (en) * | 2016-06-28 | 2020-05-05 | Murata Machinery, Ltd. | Substrate carrier and substrate carrier stack |
KR20180001999A (ko) * | 2016-06-28 | 2018-01-05 | 테크-샘 아게 | 개선된 기판 스토리지 및 프로세싱 |
US10573545B2 (en) * | 2016-06-28 | 2020-02-25 | Murata Machinery, Ltd. | Substrate carrier and substrate carrier stack |
US20180346819A1 (en) * | 2016-12-03 | 2018-12-06 | Vivarrt, Llc | Method and apparatus for extracting bitumen from oil-wetted tar sands and converting it to useful petroleum products |
JP6838010B2 (ja) * | 2018-03-22 | 2021-03-03 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
US10913903B2 (en) | 2018-08-28 | 2021-02-09 | Vivakor, Inc. | System and method for using a flash evaporator to separate bitumen and hydrocarbon condensate |
JP7361005B2 (ja) * | 2020-09-18 | 2023-10-13 | 株式会社Kokusai Electric | 基板処理装置、基板保持具、半導体装置の製造方法、及び、プログラム |
KR20230167029A (ko) * | 2021-02-26 | 2023-12-07 | 메트옥스 인터내셔널 인코포레이티드 | 고처리량의 초전도체 제조를 위한 다중-스택 서셉터 반응기 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61191015A (ja) * | 1985-02-20 | 1986-08-25 | Hitachi Ltd | 半導体の気相成長方法及びその装置 |
JP2600206B2 (ja) * | 1987-10-16 | 1997-04-16 | ソニー株式会社 | 縦型熱処理装置 |
US5310339A (en) * | 1990-09-26 | 1994-05-10 | Tokyo Electron Limited | Heat treatment apparatus having a wafer boat |
US5976261A (en) * | 1996-07-11 | 1999-11-02 | Cvc Products, Inc. | Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment |
US7393561B2 (en) * | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
US6352594B2 (en) * | 1997-08-11 | 2002-03-05 | Torrex | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6352593B1 (en) * | 1997-08-11 | 2002-03-05 | Torrex Equipment Corp. | Mini-batch process chamber |
JP3214558B2 (ja) * | 1998-11-06 | 2001-10-02 | 住友金属工業株式会社 | シリコン単結晶ウェーハの熱処理装置 |
JP2001237193A (ja) * | 1999-12-15 | 2001-08-31 | Semiconductor Leading Edge Technologies Inc | 熱処理装置用ウェハボートおよび熱処理方法 |
KR100410982B1 (ko) * | 2001-01-18 | 2003-12-18 | 삼성전자주식회사 | 반도체 제조장치용 보트 |
KR100491161B1 (ko) * | 2002-11-26 | 2005-05-24 | 주식회사 테라세미콘 | 반도체 제조장치 |
-
2004
- 2004-10-15 US US10/966,245 patent/US20050188923A1/en not_active Abandoned
-
2005
- 2005-08-16 JP JP2007536685A patent/JP2008517461A/ja not_active Withdrawn
- 2005-08-16 KR KR1020077010591A patent/KR20070073898A/ko not_active Application Discontinuation
- 2005-08-16 EP EP05786429A patent/EP1810318A1/en not_active Withdrawn
- 2005-08-16 CN CNA2005800371570A patent/CN101048852A/zh active Pending
- 2005-08-16 WO PCT/US2005/029154 patent/WO2006044021A1/en active Application Filing
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US9929032B2 (en) | 2010-10-19 | 2018-03-27 | Entegris, Inc. | Front opening wafer container with robotic flange |
CN104981898B (zh) * | 2013-04-08 | 2017-07-28 | 株式会社Eugene科技 | 基板处理装置 |
CN105624633A (zh) * | 2014-10-28 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种加热腔室及物理气相沉积设备 |
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CN106892226A (zh) * | 2015-12-18 | 2017-06-27 | 德州仪器公司 | 互锁嵌套晶片保护器 |
US10832927B2 (en) | 2015-12-18 | 2020-11-10 | Texas Instruments Incorporated | Interlocking nest wafer protector |
CN111557042A (zh) * | 2018-02-06 | 2020-08-18 | 应用材料公司 | 桥接前开式标准舱(foup) |
CN111557042B (zh) * | 2018-02-06 | 2024-06-28 | 应用材料公司 | 桥接前开式标准舱(foup) |
CN109536927A (zh) * | 2019-01-28 | 2019-03-29 | 南京爱通智能科技有限公司 | 一种适用于超大规模原子层沉积的给料系统 |
CN109536927B (zh) * | 2019-01-28 | 2023-08-01 | 南京爱通智能科技有限公司 | 一种适用于超大规模原子层沉积的给料系统 |
Also Published As
Publication number | Publication date |
---|---|
WO2006044021A1 (en) | 2006-04-27 |
KR20070073898A (ko) | 2007-07-10 |
EP1810318A1 (en) | 2007-07-25 |
JP2008517461A (ja) | 2008-05-22 |
US20050188923A1 (en) | 2005-09-01 |
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