JP2017028260A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- Microelectronics & Electronic Packaging (AREA)
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- Crystallography & Structural Chemistry (AREA)
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Abstract
【解決手段】基板処理装置100は、複数の仕切りプレート111と、複数の連結ロッド112とを有する基板ボート110と、内部の反応チューブ120と、ガス供給部130と、排気部140と、を備え、複数枚の基板10は、複数の仕切りプレートから離れて積載される。
【選択図】図1
Description
更に、好ましくは、前記複数の連結ロッドは、前記基板の搬入方向に対して対称的に配置される。
100:基板処理装置
110:基板ボート
111:仕切りプレート
112:連結ロッド
113:第1の支持ティップ
114:第2の支持ティップ
120:内部の反応チューブ
130:ガス供給部
131:噴射ノズル
140:排気部
141:吸込み口
151:シャフト
152:昇降駆動部
153:回転駆動部
160:チャンバ
161:上部チャンバ
162:下部チャンバ
170:外部チューブ
180:支持板
181:封止部材
182:軸受け部材
190:ヒータ
200:搬送チャンバ
210:流入口
220:ゲート弁
Claims (9)
- 複数枚の基板がそれぞれ積載される複数の積載空間を形成する複数の仕切りプレートと、前記複数の仕切りプレートを繋ぎ合わせる複数の連結ロッドと、を有し、
前記複数枚の基板が前記複数の積載空間に多段に積載される基板ボートと、
内部に前記基板ボートが収容される収容空間が形成され、前記基板ボートに積載された基板の処理工程が行われる内部の反応チューブと、
噴射ノズルを介して前記複数枚の基板に原料ガス及びエッチングガスを含む工程ガスを供給するガス供給部と、
前記噴射ノズルに対応するように形成された吸込み口を介して前記内部の反応チューブ内の工程残渣を排気する排気部と、
を備え、
前記複数枚の基板は、前記複数の仕切りプレートから離れて積載される基板処理装置。 - 前記ガス供給部は、前記複数の積載空間ごとに形成されて前記内部の反応チューブを貫通し、前記複数の仕切りプレートの周縁からは離れている複数の補助ノズルを更に備える請求項1に記載の基板処理装置。
- 前記複数の連結ロッドには、前記複数の仕切りプレートが係合する複数のスロットが形成される請求項1に記載の基板処理装置。
- 前記複数の連結ロッドは、前記基板の搬入方向に対して対称的に配置される請求項1に記載の基板処理装置。
- 前記基板ボートは、前記複数の仕切りプレートの周縁部に係合し、前記複数枚の基板が支持される複数の第1の支持ティップを更に備える請求項1に記載の基板処理装置。
- 前記複数の第1の支持ティップは、前記複数の積載空間に応じて異なる高さを有する請求項5に記載の基板処理装置。
- 前記基板ボートは、それぞれの前記連結ロッドに形成された高さの異なる複数の係合溝に係合し、前記複数枚の基板が支持される複数の第2の支持ティップを更に備える請求項1に記載の基板処理装置。
- 前記複数の係合溝は、前記複数の積載空間ごとに複数配設され、
前記複数の第2の支持ティップは、前記複数の積載空間に応じて異なる高さで前記係合溝に係合する請求項7に記載の基板処理装置。 - 前記ガス供給部は、それぞれの前記積載空間にそれぞれ独立して前記工程ガスを供給する請求項1に記載の基板処理装置。
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KR10-2015-0102391 | 2015-07-20 | ||
KR1020150102391A KR101715193B1 (ko) | 2015-07-20 | 2015-07-20 | 기판 처리장치 |
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JP2017028260A true JP2017028260A (ja) | 2017-02-02 |
JP6231167B2 JP6231167B2 (ja) | 2017-11-15 |
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JP2016125108A Active JP6231167B2 (ja) | 2015-07-20 | 2016-06-24 | 基板処理装置 |
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US (1) | US10392702B2 (ja) |
JP (1) | JP6231167B2 (ja) |
KR (1) | KR101715193B1 (ja) |
CN (1) | CN106367805B (ja) |
TW (1) | TWI620230B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018160660A (ja) * | 2017-03-21 | 2018-10-11 | ユ−ジーン テクノロジー カンパニー.リミテッド | 基板処理装置 |
WO2021059492A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社Kokusai Electric | 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム |
JPWO2021156987A1 (ja) * | 2020-02-05 | 2021-08-12 |
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JP6469046B2 (ja) * | 2016-07-15 | 2019-02-13 | クアーズテック株式会社 | 縦型ウエハボート |
US10872789B2 (en) * | 2017-09-28 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer cooling system |
KR102034766B1 (ko) * | 2018-04-12 | 2019-10-22 | 주식회사 유진테크 | 기판 처리 장치 및 기판 처리 방법 |
CN109554686B (zh) * | 2018-12-11 | 2023-09-22 | 广东双虹新材料科技有限公司 | 一种常压多层cvd反应器 |
US20200294819A1 (en) * | 2019-03-12 | 2020-09-17 | Nissin Ion Equipment Co., Ltd. | Systems and Methods for Substrate Cooling |
KR102212856B1 (ko) * | 2019-04-08 | 2021-02-05 | 주식회사 에이케이테크 | 사이드 스토리지의 웨이퍼 수용 카세트용 내부 후면 가스 분사 유닛 |
CN110246791B (zh) * | 2019-05-20 | 2022-10-28 | 武汉新芯集成电路制造有限公司 | 一种晶圆传送装置、去除杂质的设备及去除杂质的方法 |
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- 2016-07-07 TW TW105121504A patent/TWI620230B/zh active
- 2016-07-18 CN CN201610564688.5A patent/CN106367805B/zh active Active
- 2016-07-19 US US15/214,441 patent/US10392702B2/en active Active
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WO2021059492A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社Kokusai Electric | 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム |
JPWO2021059492A1 (ja) * | 2019-09-27 | 2021-04-01 | ||
TWI792051B (zh) * | 2019-09-27 | 2023-02-11 | 日商國際電氣股份有限公司 | 基板處理裝置、昇降機構、半導體裝置之製造方法及程式 |
JP7256887B2 (ja) | 2019-09-27 | 2023-04-12 | 株式会社Kokusai Electric | 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム |
JPWO2021156987A1 (ja) * | 2020-02-05 | 2021-08-12 | ||
JP7304975B2 (ja) | 2020-02-05 | 2023-07-07 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法および記録媒体 |
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US10392702B2 (en) | 2019-08-27 |
JP6231167B2 (ja) | 2017-11-15 |
TWI620230B (zh) | 2018-04-01 |
KR101715193B1 (ko) | 2017-03-10 |
TW201715568A (zh) | 2017-05-01 |
CN106367805B (zh) | 2020-06-09 |
US20170025293A1 (en) | 2017-01-26 |
CN106367805A (zh) | 2017-02-01 |
KR20170010583A (ko) | 2017-02-01 |
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