WO2021059492A1 - 基板処理装置、昇降機構、半導体装置の製造方法及びプログラム - Google Patents
基板処理装置、昇降機構、半導体装置の製造方法及びプログラム Download PDFInfo
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- WO2021059492A1 WO2021059492A1 PCT/JP2019/038175 JP2019038175W WO2021059492A1 WO 2021059492 A1 WO2021059492 A1 WO 2021059492A1 JP 2019038175 W JP2019038175 W JP 2019038175W WO 2021059492 A1 WO2021059492 A1 WO 2021059492A1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Definitions
- the present disclosure relates to a substrate processing device for processing a substrate in a semiconductor device manufacturing process, an elevating mechanism, a semiconductor device manufacturing method, and a program.
- a vertical substrate processing device is used in the heat treatment of a substrate (wafer) in the manufacturing process of a semiconductor device.
- a substrate wafer
- the substrate holder is carried into the processing chamber.
- the processing gas is introduced into the processing chamber while the processing chamber is heated, and the thin film forming treatment is performed on the substrate.
- Patent Document 1 describes a substrate processing apparatus in which a gas outlet for ejecting gas into a processing chamber is provided in a slot shape so as to span at least a plurality of substrates in a direction perpendicular to a substrate processing surface. ing.
- the present disclosure provides a technique capable of improving the uniformity of the thickness of the film formed on each substrate when a plurality of substrates are processed at the same time.
- a substrate support that holds a plurality of substrates at intervals in the vertical direction and a plurality of partition plates arranged between the plurality of substrates held by the substrate support are provided.
- a substrate holder having a partition plate support portion for supporting, a reaction tube for accommodating the substrate holder while holding a plurality of substrates on the substrate support, and a reaction tube for driving the substrate holder in the vertical direction.
- a first drive unit that moves in and out of the inside and the first drive unit drives the substrate holder in the vertical direction together with the substrate holder to rotate the substrate holder in a state where the substrate holder is inserted inside the reaction tube.
- either one of the substrate support or the partition plate support portion is driven in the vertical direction to change the distance between the plurality of substrates held by the substrate support and the plurality of partition plates supported by the partition plate support portion.
- Gas is supplied to the drive unit of No. 2, the heating unit provided around the reaction tube to heat the substrate, and a plurality of substrates held by the substrate support of the substrate holder housed inside the reaction tube.
- a gas supply unit having a nozzle having a hole for forming a hole, an exhaust unit for exhausting the gas supplied from the gas supply unit from the reaction tube, and a first drive unit for driving the substrate holder of the reaction tube.
- a condition in which the relative positions in the vertical direction of a plurality of substrates or a plurality of partition plates and a plurality of holes formed in a nozzle for supplying gas by driving a second drive unit in a state of being inserted inside are set in advance.
- a substrate processing apparatus having a gas supply unit and a control unit that controls a second drive unit so as to supply gas to a plurality of substrates while changing according to the above.
- the present disclosure when a plurality of substrates are processed at the same time, it is possible to control the distribution of gas concentration on the substrates and improve the uniformity of the thickness of the film formed on each substrate. Can be done.
- the efficiency of the material gas supplied can be improved by controlling the distribution of the gas concentration on the substrate and processing the substrate. It is possible to reduce the waste and reduce the cost.
- FIG. 5 is a schematic cross-sectional view of a processing chamber and a storage chamber showing a state in which a boat on which a substrate is mounted is carried into a transfer chamber in the substrate processing apparatus according to the first embodiment.
- FIG. 5 is a schematic cross-sectional view of a processing chamber and a storage chamber showing a state in which a boat on which a substrate is mounted is raised and carried into the processing chamber in the substrate processing apparatus according to the first embodiment.
- FIG. 5 is a cross-sectional view of a substrate and a partition plate showing a distance between the substrate and the partition plate in the processing chamber of the substrate processing apparatus according to the first embodiment.
- FIG. 3 (c) It is a perspective view of the substrate which shows the concentration distribution of the material gas on the surface of the substrate in this case.
- FIG. 3 (c) It is a block diagram which shows the structural example of the controller of the substrate processing apparatus which concerns on Example 1.
- FIG. It is a flow chart which shows the outline of the semiconductor device manufacturing process which concerns on Example 1.
- FIG. 1 It is a table which shows the list of the process recipe which shows an example of the process recipe read by the CPU of the substrate processing apparatus which concerns on Example 1. It is a schematic cross-sectional view which shows the schematic structure of the substrate processing apparatus which concerns on Example 2. FIG. It is a schematic cross-sectional view which shows the schematic structure of the substrate processing apparatus which concerns on Example 3. FIG. It is a schematic cross-sectional view which shows the schematic structure of the substrate processing apparatus which concerns on Example 4. FIG.
- the present disclosure supports a boat on which a plurality of substrates are mounted, a plurality of partition plates which are configured separately from the boat and are arranged on the upper portions of the substrates mounted on the boat, and a plurality of partition plates. It relates to a substrate processing apparatus having a partition plate support having a support portion and a first elevating mechanism for elevating and lowering a boat, and having a second elevating mechanism for changing the positional relationship between the substrate and the partition plate in the vertical direction. is there.
- the substrate processing apparatus 100 includes a cylindrical reaction tube 110 extending in the vertical direction, a heater 101 as a heating unit (furnace body) installed on the outer periphery of the reaction tube 110, and a gas supply unit constituting the gas supply unit.
- a nozzle 120 is provided.
- the heater 101 is composed of a zone heater which is divided into a plurality of blocks in the vertical direction and the temperature can be set for each block.
- the reaction tube 110 is made of a material such as quartz or SiC.
- the inside of the reaction pipe 110 is exhausted from the exhaust pipe 130 constituting the exhaust unit by an exhaust means (not shown).
- the inside of the reaction tube 110 is hermetically sealed with respect to the outside air by means (not shown).
- the technique of the present disclosure can be applied even if a second reaction tube is provided inside the reaction tube 110.
- the gas supply nozzle 120 (hereinafter, may be simply referred to as a nozzle) 120 is formed with a large number of holes 121 for supplying gas inside the reaction tube 110.
- a raw material gas, a reaction gas, and an inert gas (carrier gas) are introduced into the reaction tube 110 through a large number of holes 121 formed in the gas supply nozzle 120.
- the raw material gas, reaction gas, and inert gas (carrier gas) are mass flow controllers (MFC: Mass Flow Controller) not shown because of the raw material gas supply source, reaction gas supply source, and inert gas supply reduction, which are not shown, respectively.
- MFC Mass Flow Controller
- the flow rate is adjusted by, and is supplied to the inside of the reaction tube 110 from a large number of holes 121 formed in the nozzle 120.
- the inside of the reaction pipe 110 is evacuated from the exhaust pipe 130 formed in the manifold 111 to a vacuum by an exhaust means (not shown).
- the chamber 180 is installed below the reaction tube 110 via a manifold 111 and includes a storage chamber 500.
- the substrate 10 is mounted (mounted) on the substrate support (boat) 300 by a transfer machine (not shown) via the substrate carry-in entrance 310, or the substrate 10 is mounted on the substrate support (boat) 300 by the transfer machine. (Hereinafter, it may be simply referred to as a boat) 300 is taken out.
- the chamber 180 is made of a metal material such as SUS (stainless steel) or Al (aluminum).
- a substrate support (boat) 300, a partition plate support 200, and a substrate support (boat) 300 and a partition plate support 200 are vertically oriented. It is provided with a vertical drive mechanism unit 400 that constitutes a first drive unit that drives in the rotational direction.
- the board support portion is composed of at least a board support (boat) 300, and the board 10 is transferred or transferred inside the storage chamber 500 via a board carry-in port 310 by a transfer machine (not shown).
- the substrate 10 is conveyed to the inside of the reaction tube 110 to form a thin film on the surface of the substrate 10.
- the substrate support portion may include the partition plate support portion 200.
- a plurality of disc-shaped partition plates 203 are fixed at a predetermined pitch to a support column 202 supported between the base portion 201 and the top plate 204. ing.
- a plurality of support rods 302 are supported by the base 301, and the plurality of substrates 10 are supported by the plurality of support rods 302 at predetermined intervals. It has a configuration to be used.
- a plurality of boards 10 are placed at predetermined intervals by a plurality of support rods 302 supported by the base 301.
- the plurality of substrates 10 supported by the support rod 302 are partitioned by a disk-shaped partition plate 203 fixed (supported) to a support column 202 supported by the partition plate support portion 200 at predetermined intervals. ..
- the partition plate 203 is arranged on either or both of the upper part and the lower part of the substrate 10.
- the predetermined spacing between the plurality of boards 10 mounted on the board support (boat) 300 is the same as the vertical spacing between the partition plates 203 fixed to the partition plate support portion 200. Further, the diameter of the partition plate 203 is formed to be larger than the diameter of the substrate 10.
- the boat 300 uses a plurality of support rods 302 to vertically support a plurality of, for example, five substrates 10 in multiple stages.
- the vertical distance between the top and bottom of the substrate 10 that is supported in multiple stages in the vertical direction is set to, for example, about 60 mm.
- the base 301 and the plurality of support rods 302 constituting the boat 300 are made of a material such as quartz or SiC.
- the boat 300 may be configured to support about 5 to 50 substrates 10.
- the partition plate 203 of the partition plate support portion 200 is also referred to as a separator.
- the partition plate support portion 200 and the substrate support (boat) 300 are supported by the vertical drive mechanism portion 400 in the vertical direction between the reaction tube 110 and the storage chamber 500 and by the substrate support (boat) 300. It is driven in the direction of rotation around the center of the substrate 10.
- the vertical drive mechanism unit 400 constituting the first drive unit has a vertical drive motor 410, a rotary drive motor 430, and a substrate support (boat) as drive sources.
- a boat up / down mechanism 420 provided with a linear actuator as a board support elevating mechanism for driving the 300 in the vertical direction is provided.
- the vertical drive motor 410 as a partition plate support elevating mechanism moves the nut 412 screwed on the ball screw 412 up and down along the ball screw 412 by rotationally driving the ball screw 411.
- the partition plate support portion 200 and the substrate support (boat) 300 are driven in the vertical direction between the reaction tube 110 and the storage chamber 500 together with the base plate 402 fixing the nut 412.
- the base plate 402 is also fixed to the ball guide 415 that is engaged with the guide shaft 414, and is configured to be able to move smoothly in the vertical direction along the guide shaft 414.
- the upper end and the lower end of the ball screw 411 and the guide shaft 414 are fixed to the fixing plates 413 and 416, respectively.
- the partition plate support elevating mechanism may include a member for transmitting the power of the vertical drive motor 410.
- the rotary drive motor 430 and the boat vertical mechanism 420 provided with the linear actuator form a second drive unit, and are fixed to the base flange 401 as a lid supported by the side plate 403 on the base plate 402.
- the covering shape is formed in a tubular shape or a columnar shape.
- a hole communicating with the transfer chamber is provided on a part of the cover shape or on the bottom surface. Due to the communicating holes, the inside of the cover shape is configured to have the same pressure as the pressure in the transfer chamber.
- a support column may be used instead of the side plate 403. In this case, maintenance of the vertical mechanism and the rotating mechanism becomes easy.
- the rotation drive motor 430 drives a rotation transmission belt 432 that engages with the tooth portion 431 attached to the tip portion, and rotatesly drives a support 440 that engages with the rotation transmission belt 432.
- the support tool 440 supports the partition plate support portion 200 by the base portion 201, and is driven by the rotation drive motor 430 via the rotation transmission belt 432 to rotate the partition plate support portion 200 and the boat 300. ..
- the support 440 is partitioned from the inner cylinder portion 4011 of the base flange 401 by a vacuum seal 444, and the lower portion thereof is rotatably guided with respect to the inner cylinder portion 4011 of the base flange 401 by a bearing 445.
- the boat vertical mechanism 420 equipped with a linear actuator drives the shaft 421 in the vertical direction.
- a plate 422 is attached to the tip of the shaft 421.
- the plate 422 is connected to a support portion 441 fixed to the base 301 of the boat 300 via a bearing 423.
- the support portion 441 is supported by the support tool 440 via the linear guide bearing 442.
- the shaft 421 is driven in the vertical direction by the boat vertical mechanism 420 equipped with a linear actuator, the shaft 421 is fixed to the boat 300 with respect to the support 440 fixed to the partition plate support portion 200.
- the support portion 441 can be driven relatively in the vertical direction.
- this embodiment is not limited to this, and the support tool 440 and the support portion 441 may be arranged separately rather than concentrically.
- the support 440 fixed to the partition plate support 200 and the support 441 fixed to the boat 300 are connected by a vacuum bellows 443.
- An O-ring 446 for vacuum sealing is installed on the upper surface of the base flange 401 as a lid, and as shown in FIG. 2, the upper surface of the base flange 401 is pressed against the chamber 180 by being driven by the vertical drive motor 410.
- the inside of the reaction chamber 110 can be kept airtight by raising the reaction tube 110 to a certain position.
- the O-ring 446 for vacuum sealing is not always necessary, and the inside of the reaction tube 110 is kept airtight by pressing the upper surface of the base flange 401 against the chamber 180 without using the O-ring 446 for vacuum sealing. You may. Further, the vacuum bellows 443 does not necessarily have to be provided.
- the substrate support portion is inserted into the reaction tube 110 by being driven by the vertical drive motor 410 and raised until the upper surface of the base flange 401 is pressed against the chamber 180 as shown in FIG.
- the raw material gas, the reaction gas, or the inert gas (carrier gas) is introduced into the reaction tube 110 through a large number of holes 121 formed in the gas supply nozzle 120.
- the pitch of the large number of holes 121 formed in the gas supply nozzle 120 is the same as the vertical spacing of the substrate 10 mounted on the boat 300 and the vertical spacing of the partition plate 203 fixed to the partition plate support portion 200. Is.
- the position in the height direction of the partition plate 203 fixed to the support column 202 of the partition plate support portion 200 is fixed, whereas it is linear.
- the boat vertical mechanism 420 provided with the actuator to move the support portion 441 fixed to the base 301 of the boat 300 up and down, the position of the substrate 10 supported by the boat 300 in the height direction with respect to the partition plate 203.
- the position of the hole 121 formed in the gas supply nozzle 120 is also fixed, the position (relative position) of the substrate 10 supported by the boat 300 in the height direction can be changed with respect to the hole 121 as well. it can.
- the position of the substrate 10 supported by the boat 300 is adjusted in the vertical direction by driving the boat vertical mechanism 420 equipped with a linear actuator with respect to the reference positional relationship of transportation as shown in FIG. 3A.
- the positional relationship between the hole 121 formed in the nozzle 120 and the partition plate 203 is set so that the position of the substrate 10 is higher than the transport position (home position) 10-1 as shown in FIG. 3 (b).
- the gap G1 between the partition plate 2032 and the partition plate 2032 is narrowed, or the position of the substrate 10 is made lower than the transport position (home position) 10-1 as shown in FIG.
- the gap G2 between them can be widened.
- the position of the substrate 10 is raised to narrow the gap G1 between the substrate 10 and the upper partition plate 2032, and as shown in FIG. 3C, the position of the substrate 10 is lowered. Then, when the silicon dichloride gas (SiCl 2 ) is supplied from the hole 121 formed in the nozzle 120 in a state where the gap G2 between the upper partition plate 2032 and the partition plate 2032 is widened, it is formed on the surface of the substrate 10. The result of simulating the in-plane distribution of the film is shown in FIG.
- SiCl 2 silicon dichloride gas
- the point sequence 510 indicated by Narrow is in a state as shown in FIG. 3 (b), that is, the position of the substrate 10 is raised to narrow the gap G1 between the substrate 10 and the upper partition plate 2032.
- the film is formed in a state where the film is formed higher than the position of the gas flow 1211 ejected from the hole 121.
- a relatively thick film is formed on the peripheral portion of the substrate 10, and the thickness of the film formed on the central portion of the substrate 10 is a concave film thickness distribution that is thinner than that on the peripheral portion.
- the state as shown in FIG. 3C that is, the position of the substrate 10 is lowered to widen the gap G2 between the substrate 10 and the upper partition plate 2032, and the substrate is widened.
- the case where the film formation is carried out in a state where 10 is made lower than the position of the gas flow 1211 ejected from the hole 121 is shown.
- the central portion of the substrate 10 has a convex film thickness distribution in which a film relatively thicker than the peripheral portion is formed.
- FIG. 5 when the relationship between the substrate 10 and the holes 121 formed in the partition plate 2032 and the nozzle 120 is set to the positional relationship as shown in FIG. 3 (c), the silicon dichloride gas (2) from the direction of arrow 611.
- the results obtained by simulating the partial pressure distribution of the SiCl 2 gas on the surface of the substrate 10 when the SiCl 2) is supplied are shown.
- the film thickness distribution in FIG. 4 corresponds to the film thickness distribution in the aa'cross section of FIG.
- the hole 121 formed in the nozzle 120 As shown in FIG. 5, when the relationship between the substrate 10 and the hole 121 formed in the partition plate 2032 and the nozzle 120 is set to the positional relationship as shown in FIG. 3C, the hole 121 formed in the nozzle 120 The partial pressure of the SiCl 2 gas is relatively high in the portion displayed in dark color from the portion close to the portion to the central portion of the substrate 10. On the other hand, the partial pressure of the SiCl 2 gas in the peripheral portion of the substrate 10 away from the hole 121 formed in the nozzle 120 is relatively low.
- the rotary drive motor 430 is driven to rotate the support 440 to rotate the partition plate support portion 200 and the boat 300, thereby rotating the substrate 10 supported by the boat 300.
- the variation in film thickness (thickness distribution) in the circumferential direction of the substrate 10 can be reduced.
- controller As shown in FIG. 1, the substrate processing apparatus 100 is connected to a controller 260 that controls the operation of each unit.
- the controller 260 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a storage device 260c, and an input / output port (I / O port) 260d. There is.
- the RAM 260b, the storage device 260c, and the I / O port 260d are configured so that data can be exchanged with the CPU 260a via the internal bus 260e.
- the controller 260 is configured to be connectable to an input / output device 261 configured as, for example, a touch panel or the like, or an external storage device 262.
- the storage device 260c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the substrate processing apparatus, a process recipe in which the procedures and conditions for substrate processing described later are described, a database, and the like are readablely stored.
- the process recipe is a combination of the process recipes so that the controller 260 can execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program.
- this program recipe, control program, etc. are collectively referred to as a program.
- program may include only the program recipe alone, the control program alone, or both.
- the RAM 260b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 260a are temporarily held.
- the I / O port 260d includes a board carry-in port 310, a vertical drive motor 410, a boat vertical mechanism 420 equipped with a linear actuator, a rotary drive motor 430, a heater 101, a mass flow controller (not shown), and a temperature controller (not shown). ), Vacuum pump (not shown), etc.
- connection in the present disclosure includes the meaning that each part is connected by a physical cable, but means that the signal (electronic data) of each part can be directly or indirectly transmitted / received. Also includes. For example, equipment for relaying signals and equipment for converting or calculating signals may be provided between each unit.
- the CPU 260a is configured to read and execute a control program from the storage device 260c and read a process recipe from the storage device 260c in response to an input of an operation command from the controller 260. Then, the CPU 260a operates the opening / closing operation of the board carry-in inlet 310, drives the vertical drive motor 410, drives the boat vertical mechanisms 420 and 1240 provided with the linear actuator, and rotates the drive so as to follow the contents of the read process recipe. It is configured to control the rotation operation of the motor 430, the power supply operation to the heater 101, and the like.
- the controller 260 is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer.
- an external storage device for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as MO, a semiconductor memory such as a USB memory or a memory card
- the controller 260 according to the present embodiment can be configured by preparing the 262 and installing the program on a general-purpose computer using the external storage device 262.
- the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 262.
- a communication means such as a network 263 (Internet or a dedicated line) may be used to supply the program without going through the external storage device 262.
- the storage device 260c and the external storage device 262 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium when the term recording medium is used in this specification, it may include only the storage device 260c alone, it may include only the external storage device 262 alone, or it may include both of them.
- SiO 2 (as an example of a process of forming a thin film on a substrate 10 as one step of a manufacturing process of a semiconductor device (device)).
- the process of forming the silicon oxide) layer will be described.
- the step of forming a film such as a SiO 2 layer is executed inside the reaction tube 110 of the substrate processing apparatus 100 described above. As described above, the execution of the manufacturing process is performed by executing the program of the CPU 260a of the controller 260 of FIG.
- the substrate processing step (manufacturing step of the semiconductor device) according to the present embodiment, first, it is driven by the vertical drive motor 410 and raised until the upper surface of the base flange 401 is pressed against the chamber 180 as shown in FIG.
- the substrate support is inserted inside the reaction tube 110.
- the height (interval) of the substrate 10 mounted on the boat 300 with respect to the partition plate 203 is shown in FIG.
- the substrate 10 is raised as shown in FIG. 3 (b) and the distance G1 between the substrate 10 and the partition plate 203 is small, or as shown in FIG. 3 (c).
- the height of the substrate 10 with respect to the partition plate 203 is desired. Adjust so that it becomes a value.
- (A) A step of supplying Si 2 Cl 6 (disilicon hexachloride) gas from the gas supply nozzle 120 to the substrate 10 housed inside the reaction tube 110.
- (B) A step of removing residual gas inside the reaction tube 110 and
- (C) A step of supplying O 2 (oxygen) (or O 3 (ozone) or H 2 O (water)) from the gas supply nozzle 120 to the substrate 10 housed inside the reaction tube 110.
- (D) A step of removing residual gas inside the reaction tube 110 and The above steps (a) to (d) are repeated a plurality of times to form the SiO 2 layer on the substrate 10.
- the rotation drive motor 430 is connected to the rotation transmission belt 432. While the support 440 is rotationally driven by the rotary drive motor 430, the height (interval) of the substrate 10 with respect to the partition plate 203 is raised by raising the substrate 10 as shown in FIG. 3B to increase the height (interval) between the substrate 10 and the partition plate 203. Execution is performed while periodically changing between a state in which the distance G1 from 203 is small and a state in which the substrate 10 is lowered to increase the distance G2 between the substrate 10 and the partition plate 203 as shown in FIG. 3C. To do. As a result, the film thickness of the film formed on the substrate 10 can be made uniform.
- board when the word “board” is used in this specification, it means “the board itself” or “a laminate (aggregate) of a board and a predetermined layer or film formed on the surface thereof). “(That is, a substrate including a predetermined layer, film, etc. formed on the surface) may be used.
- surface of the substrate when the term “surface of the substrate” is used in the present specification, it means “the surface of the substrate itself (exposed surface)” or “the surface of a predetermined layer or film formed on the substrate”. That is, it may mean “the outermost surface of the substrate as a laminated body”.
- board is also used in the present specification and is synonymous with the term “wafer”.
- Process condition setting S701
- the CPU 260a reads the process recipe and the related database stored in the storage device 260c and sets the process conditions.
- process recipes and related databases may be obtained via the network.
- FIG. 8 shows an example of the process recipe 800 read by the CPU 260a.
- the main items of the process recipe 800 include gas flow rate 810, temperature data 820, number of processing cycles 830, boat height 840, boat height adjustment time interval 850, and the like.
- the gas flow rate 810 includes items such as a raw material gas flow rate 811, a reaction gas flow rate 812, and a carrier gas flow rate 813.
- the temperature data 820 includes the heating temperature 821 inside the reaction tube 110 by the heater 101.
- the boat height 840 includes set values of a minimum value (G1) and a maximum value (G2) of the distance between the substrate 10 and the partition plate 203 as described with reference to FIGS. 3 (b) and 3 (c). Is done.
- the boat height adjustment time interval 850 maintains the interval between the substrate 10 and the partition plate 203 at the minimum value as shown in FIG. 3 (b) and the maximum value as shown in FIG. 3 (c).
- Set the time interval for switching from the time to do That is, when the distance between the surface of the substrate 10 and the partition plate 203 (the position of the substrate 10 with respect to the position of the gas supply hole 121 of the nozzle 120) is set as shown in FIG. 3 (b) and in FIG. 3 (c).
- a thin film is formed on the substrate 10 by processing while alternately switching between the case where the setting is made and the case where the setting is made.
- a thin film having a flat film thickness distribution in which the film thicknesses of the central portion and the outer peripheral portion are substantially the same can be formed on the surface of the substrate 10.
- the vertical drive motor 410 is driven to rotate the ball screw 411 in a state where the board carry-in inlet 310 is closed and the inside of the storage chamber 500 is sealed to the outside.
- the screw boat 300 is raised, and the boat 300 is carried into the inside of the reaction tube 110 from the storage chamber 500.
- the height of the boat 300 lifted by the vertical drive motor 410 is set from the nozzle 120 to the inside of the reaction tube 110 through the hole 123 formed in the tube wall of the reaction tube 110 based on the process recipe read in S701. Difference from the blowout position (height of the tip portion of the nozzle 120) of the supplied gas The difference in the position in the height direction is set to the state shown in FIG. 3 (b) or FIG. 3 (c).
- Step S704 Based on the recipe read in step S704 in a state of being evacuated by a vacuum pump (not shown), the inside of the reaction tube 110 is evacuated by the heater 101 so that the inside of the reaction tube 110 has a desired pressure (vacuum degree). Heat. At this time, the amount of electricity supplied to the heater 101 is feedback-controlled based on the temperature information detected by the temperature sensor (not shown) so that the inside of the reaction tube 110 has a desired temperature distribution. The heating of the inside of the reaction tube 110 by the heater 101 is continuously performed at least until the treatment on the substrate 10 is completed.
- the pitch (the distance between the back surface of the substrate 10 and the partition plate 203 on the lower side of the substrate 10) is narrowed (state in FIG. 3C). This pitch is narrowed at least before the supply of the raw material gas. After supplying the raw material gas, the pitch is gel during the day. Further, the pitch may be different between the supply of the raw material gas and the supply of the reaction gas. Further, the pitch may be changed during the supply of the raw material gas (reaction gas). Furthermore, the operation timing at which the substrate support and the partition plate support are relatively moved in the vertical direction can be arbitrarily set.
- Si 2 Cl 6 gas which is a raw material gas
- Si 2 Cl 6 gas is flowed from the hole 121 of the nozzle 120 into the reaction tube 110 in a state where the flow rate is adjusted.
- the gas that did not contribute to the reaction on the surface of the substrate 10 is exhausted from the exhaust pipe 130.
- the relative position (height) of the surface of the substrate 10 mounted on the boat 300 with respect to the hole 121 of the nozzle 120 and the partition plate 203 of the partition plate support portion 200 is based on the process recipe read in step S701.
- the boat up / down mechanism 420 provided with the linear actuator to drive the shaft 421 in the up / down direction
- the boat is moved up and down at predetermined time intervals, and is shown in a plurality of positions (for example, FIG. 3B). It can be switched between the position and the position shown in FIG. 3 (c).
- the Si 2 Cl 6 gas By introducing the Si 2 Cl 6 gas into the reaction tube 110 from the hole 121 of the nozzle 120, the Si 2 Cl 6 gas is supplied to the substrate 10 mounted on the boat 300.
- the flow rate of the supplied Si 2 Cl 6 gas is set in the range of 0.002 to 1 slm (Standard liter per minute), more preferably in the range of 0.1 to 1 slm.
- an inert gas such as N 2 (nitrogen) gas or Ar (argon) gas is supplied to the inside of the reaction pipe 110 as a carrier gas together with the Si 2 Cl 6 gas, and is exhausted from the exhaust pipe 130.
- the specific flow rate of the carrier gas is set in the range of 0.01 to 5 slm, more preferably in the range of 0.5 to 5 slm.
- the N 2 gas of the carrier gas is supplied to the inside of the reaction pipe 110 via the nozzle 120 and exhausted from the exhaust pipe 130.
- the temperature of the heater 101 is set so that the temperature of the substrate 10 is in the range of, for example, 250 to 550 ° C.
- the only gases flowing inside the reaction tube 110 are Si 2 Cl 6 gas and N 2 gas, and by supplying the Si 2 Cl 6 gas to the reaction tube 110, on the substrate 10 (surface base film), for example.
- a Si-containing layer having a thickness of less than one atomic layer to several atomic layers is formed.
- the Si 2 Cl 6 gas which is a raw material gas, is supplied to the inside of the reaction tube 110 via the nozzle 120 for a predetermined time to form a Si-containing layer on the surface of the substrate 10, and then the supply of the Si 2 Cl 6 gas is stopped. To do. At this time, the inside of the reaction tube 110 is evacuated by a vacuum pump (not shown), and the Si 2 Cl 6 gas remaining in the reaction tube 110 after contributing to the formation of the unreacted or Si-containing layer is discharged into the inside of the reaction tube 110. Exclude from.
- the supply of the N 2 gas, which is the carrier gas, from the nozzle 120 to the inside of the reaction tube 110 is maintained.
- the N 2 gas acts as a purge gas, and can enhance the effect of removing the unreacted or Si 2 Cl 6 gas remaining inside the reaction tube 110 from the inside of the reaction tube 110 after contributing to the formation of the Si-containing layer.
- reaction gas supply S7053
- the O 2 gas which is the reaction gas
- the rotation drive motor 430 is driven to maintain the rotation of the boat 300.
- the O 2 gas that did not contribute to the reaction is exhausted from the exhaust pipe 130.
- the flow rate of the O 2 gas to be supplied is set in the range of 0.2 to 10 slm, more preferably in the range of 1 to 5 slm.
- the supply of the N 2 gas is stopped so that the N 2 gas is not supplied to the inside of the reaction tube 110 together with the O 2 gas. That is, since the O 2 gas is supplied to the inside of the reaction tube 110 without being diluted with the N 2 gas, it is possible to improve the film formation rate of the SiO 2 layer.
- the temperature of the heater 101 at this time is set to the same temperature as that of the Si 2 Cl 6 gas supply step.
- the relative position (height) of the surface of the substrate 10 mounted on the boat 300 with respect to the hole 121 of the nozzle 120 and the partition plate 203 of the partition plate support portion 200 is set in step S701 as in step S7051.
- the boat up / down mechanism 420 equipped with a linear actuator is operated to drive the shaft 421 in the up / down direction, so that the boat can be moved up and down at predetermined time intervals to a plurality of positions (for example, FIG. 3). It can be switched between the position shown in (b) and the position shown in FIG. 3 (c).
- the only gas flowing inside the reaction tube 110 is O 2 gas.
- the O 2 gas undergoes a substitution reaction with at least a part of the Si-containing layer formed on the substrate 10 in the raw material gas (Si 2 Cl 6) supply step (S7051).
- Si contained in the Si-containing layer and O contained in the O 2 gas are combined to form a SiO 2 layer containing Si and O on the substrate 10.
- SiO having a predetermined thickness (for example, 0.1 to 2 nm) is placed on the substrate 10. Form two layers.
- the above cycle is preferably repeated a plurality of times, for example, preferably about 10 to 80 times, and more preferably about 10 to 15 times.
- the boat is moved up and down at predetermined time intervals by operating the boat up and down mechanism 420 provided with the linear actuator to drive the shaft 421 in the up and down direction based on the process recipe read in step S701.
- the position shown in FIG. 3 (b) and the position shown in FIG. 3 (c) are repeatedly executed while switching between the raw material gas supply step (S7051) and the reaction gas supply step (S7053).
- a thin film having a uniform film thickness distribution can be formed on the surface of the substrate 10.
- the substrate 10 on which the thin film is formed from the boat 300 is taken out to the outside of the storage chamber 500 via the substrate carry-in entrance 310, and the processing of the substrate 10 is completed.
- a SiO 2 film on the substrate 10 has been described, but the present embodiment is not limited to this.
- a Si 3 N 4 (silicon nitride) film or a TiN (titanium nitride) film can be formed instead of the SiO 2 film.
- the above-mentioned halogen-containing gas or a gas containing at least one of a halogen element, an amino group, a cyclopenta group, oxygen (O), carbon (C), an alkyl group, and the like is used.
- a gas containing at least one of a halogen element, an amino group, a cyclopenta group, oxygen (O), carbon (C), an alkyl group, and the like is used.
- the positional relationship between the substrate 10 and the hole 121 of the nozzle 120 for supplying the film-forming gas is changed based on preset conditions according to the surface area of the substrate 10 and the type of film to be formed. Since the film can be formed, the in-plane uniformity of the film thickness distribution of the thin film formed on the substrate 10 mounted on the boat 300 can be improved.
- the film forming process has been described as an application example of the present disclosure, the present disclosure is not limited to this, and can be applied to the etching process.
- the distance between the substrate 10 and the upper partition plate 203 of the substrate 10 is narrowed by operating the boat vertical mechanism 420 provided with a linear actuator to drive the shaft 421 in the vertical direction.
- the E treatment among the DED (Depo Etch Depo) treatments becomes possible.
- the DED process means a process of repeatedly performing a film forming process and an etching process to form a predetermined film.
- the above-mentioned E treatment means an etching treatment.
- parameters for adjusting the distance between the substrate 10 and the partition plate 203 on the upper side of the substrate 10 include film thickness distribution, temperature, gas flow rate, pressure, time, gas type, surface area of the substrate, and the like.
- a film thickness measuring device is provided in the substrate processing apparatus, and the distance between the substrate 10 and the partition plate 203 on the upper side of the substrate 10 is changed based on the film thickness measurement result.
- the decomposition amount of the gas may be detected by a sensor, and the distance between the substrate 10 and the partition plate 203 on the upper side of the substrate 10 may be changed based on the decomposition amount data.
- FIG. 9 shows the configuration of the substrate processing apparatus 900 according to the second embodiment.
- the same configuration as that of the first embodiment is assigned the same number and the description thereof will be omitted.
- the configurations of the heater 101, the reaction pipe 110, the gas supply nozzle 120, the manifold 111, the exhaust pipe 130, and the controller 260 described in the first embodiment are the same as those in the first embodiment. Since there are, those displays are omitted.
- the support 9440 is driven to rotate and driven in the rotational direction around the center of the board 10 supported by the board support (boat) 300, and the boat vertical mechanism 9420 equipped with a linear actuator via the shaft 9421.
- the point that the plate 9422 is driven in the vertical direction and the support portion 9441 fixed to the boat 300 is relatively driven in the vertical direction with respect to the support 9440 fixed to the partition plate support portion 200 is described in the first embodiment. It is the same.
- the partition plate support portion 200 and the substrate support (boat) 300 are raised by the vertical drive mechanism portion 400, and the base flange 9401 is placed in the chamber 180 with the O-ring 446 sandwiched between them.
- the configuration of the substrate processing apparatus 100 described in the first embodiment is that the partition plate support portion 200 and the substrate support (boat) 300 are provided with a mechanism portion that can independently adjust the heights of the partition plate support portion 200 and the substrate support (boat) 300 while being pressed against the substrate. different.
- the substrate processing apparatus 900 includes a second linear actuator for independently moving the partition plate support portion 200 up and down with respect to the substrate support (boat) 300. It is equipped with a boat up / down mechanism 9460.
- the boat vertical mechanism 9460 equipped with the second linear actuator drives the plate 9462 in the vertical direction via the shaft 9461 to move the partition plate support portion 200 up and down independently of the substrate support (boat) 300. ..
- the plate 9462 is connected to the support tool 9440 that supports the partition plate support portion 200 by the base portion 201 with the rotary seal mechanism 9423 sandwiched therein.
- the boat up / down mechanism 9420 equipped with a linear actuator and the boat up / down mechanism 9460 equipped with a second linear actuator are fixed to a base flange 9401 supported by a side plate 9403 on a base plate 9402.
- the rotary drive motor 9430 is attached to a plate 9462 driven in the vertical direction by a boat vertical mechanism 9460 equipped with a second linear actuator.
- the rotation drive motor 9430 drives a rotation transmission belt 9432 that engages with the tooth portion 9431 attached to the tip portion, and rotatesly drives a support 9440 that engages with the rotation transmission belt 9432.
- the support 9440 supports the partition plate support portion 200 by the base portion 201, and is driven by the rotation drive motor 9430 via the rotation transmission belt 9432 to rotate the partition plate support portion 200 and the boat 300. ..
- the substrate 10 mounted on the boat 300 is in the height direction with respect to the holes 121 formed in the nozzle 120 as shown in FIGS. 1 and 2.
- the position and the position in the height direction of the partition plate 203 fixed to the partition plate support portion 200 can be adjusted independently.
- the height direction of the substrate 10 mounted on the boat 300 is relative to the hole 121 formed in the nozzle 120. Since the film thickness can be formed while independently adjusting the position and the position in the height direction of the partition plate 203 fixed to the partition plate support portion 200, the thin film formed on the substrate 10 mounted on the boat 300. It is possible to improve the in-plane uniformity of the film thickness distribution.
- FIG. 10 shows the configuration of the substrate processing apparatus 1000 according to the third embodiment.
- the same configuration as that of the first embodiment is assigned the same number and the description thereof will be omitted.
- the substrate support (boat) 3001 is independently moved up and down with respect to the partition plate support portion 2001.
- the configuration is different from the configuration of the substrate processing apparatus 100 described in the first embodiment.
- the vertical drive mechanism portion 400 is used to move the reaction tube 110 and the storage chamber 500 in the vertical direction and the substrate support (boat) 300.
- the plate 9422 is driven in the vertical direction via the shaft 9421 by a boat vertical mechanism 9420 equipped with a linear actuator and a point driven in the rotational direction around the center of the substrate 10 supported by the partition plate support portion 200.
- the point that the support portion 441 fixed to the boat 300 is driven in the vertical direction relative to the fixed support 9440 is the same as that of the first embodiment.
- the board support (boat) 3001 is moved up and down independently of the partition plate support 2001 by the boat up / down mechanism 1420 provided with the linear actuator.
- the boat vertical mechanism 1420 equipped with a linear actuator drives the shaft 1421 in the vertical direction.
- a plate 1422 is attached to the tip of the shaft 1421.
- the plate 1422 is connected to a support portion 1441 fixed to the partition plate support portion 2001 base portion 3011 via a bearing 1423.
- the support portion 1441 is supported by the support tool 1440 via the linear guide bearing 1442.
- the upper surface of the support 1440 is connected to the base portion 3011 of the substrate support (boat) 3001, and is partitioned from the inner cylinder portion 14011 of the base flange 1401 by a vacuum seal 1444, and the lower portion thereof is partitioned by a bearing 1445. It is rotatably guided with respect to the inner cylinder portion 14011 of 1401.
- the partition plate support portion 2001 can also rotate together with the boat 3001 when the boat 3001 is rotationally driven by the rotary drive motor 1430. it can.
- the support portion 1441 fixed to the partition plate support portion 2001 and the support tool 1440 fixed to the boat 300 are connected by a vacuum bellows 1443.
- the height of the substrate 10 mounted on the boat 3001 is fixed (fixed) with respect to the hole 121 formed in the nozzle 120, and the partition plate is used.
- the position of the partition plate 2031 fixed to the support portion 2001 in the height direction can be adjusted.
- the partition plate 2031 that covers the upper surface and the lower surface of the substrate 10 and the holes 121 and positions of the nozzle 120 for supplying the film-forming gas are located according to the surface area of the substrate 10 and the type of film to be formed. Since the film can be formed while changing the relationship based on preset conditions, it is possible to improve the in-plane uniformity of the film thickness distribution of the thin film formed on the substrate 10 mounted on the boat 3001. it can.
- FIG. 11 shows the configuration of the substrate processing apparatus 1100 according to the fourth embodiment.
- the same configuration as that of the first embodiment is assigned the same number and the description thereof will be omitted.
- the substrate processing apparatus 1100 has a structure capable of vacuum exhausting the inside of the storage chamber 5001 by using a vacuum exhaust means (not shown) with respect to the configuration of the substrate processing apparatus 100 described in the first embodiment. .. This eliminates the need to vacuum seal between the reaction tube 110 and the storage chamber 500 using the O-ring 446 as described in FIG. 2 in Example 1, and changes the height of the base flange 401 during substrate processing. Made it possible.
- Example 1 the same configurations as those described with reference to FIGS. 1 and 2 are given the same numbers, and the description thereof will be omitted.
- the vertical drive mechanism unit 4001 is arranged outside the storage chamber 5001, is fixed to the vertical drive mechanism unit 4001, and is displaced in the vertical direction by the vertical drive mechanism unit 4001.
- the plate 4021 and the storage chamber 5001 are connected by a vacuum bellows 417 so that the inside of the storage chamber 5001 can be sealed and vacuum-sealed.
- the space sandwiched between the base flange 1401 and the plate 1422 is covered with the side wall 4031 to ensure the airtightness of the inside of the storage chamber 5001.
- the vacuum state inside the storage chamber 5001 can be maintained while the space surrounded by the plate 1422 and the side wall 4031 is at atmospheric pressure.
- the electrical wiring of the elevating / rotating mechanism and the cooling water for protecting the vacuum seal (not shown) are connected. Can be provided.
- the substrate support (boat) 300 and the partition plate support Since the position in the height direction with respect to the hole 121 formed in the gas supply nozzle 120 together with the portion 200 can be changed, the position in the height direction with respect to the hole 121 formed in the gas supply nozzle 120 during the processing of the substrate 10 can be changed.
- the height of the partition plate 203 fixed to the partition plate support portion 200 and the height of the substrate 10 mounted on the substrate support (boat) 300 can be individually controlled.
- a method of forming a uniform film on a substrate by changing the positional relationship between the substrate and a nozzle for supplying a film-forming gas according to the surface area of the substrate and the type of film to be formed is possible.
- the nozzle for supplying the film-forming gas is fixed to the reaction chamber, and the substrate support (boat) on which the substrates are installed in multiple stages moves up and down by the vertical drive mechanism unit. It is composed of.
- the O-ring seal is not performed and the reaction chamber and the vacuum loading area (inside the storage chamber 500) are in a communicative space. ..
- the inert gas is supplied from the vacuum loading area and a pressure gradient is applied to shut off the gas.
- the film forming gas injected from the nozzle for supplying the film forming gas is adjusted to the position near and far from the surface of the substrate by rotating the substrate during the film formation, and the gas flow velocity of the wafer surface layer is adjusted. It is possible to adjust the decomposition state until the film-forming gas, which can be supplied while being variable and easily undergoes a gas-phase reaction, reaches the wafer surface layer and contributes to film-forming.
- the basic support in a state where a plurality of substrates are stacked at intervals in the vertical direction and held by the substrate support, the basic support is driven by the vertical drive mechanism unit to drive the inside of the reaction tube.
- the substrate supported on the substrate support housed inside the reaction tube is heated by a heating unit arranged around the reaction tube, and the substrate support housed inside the reaction tube is heated.
- the raw material gas is supplied from the plurality of holes of the gas supply nozzle to the substrate held in the above and the supplied raw material gas is exhausted from the reaction tube, and the reaction gas is supplied to the substrate from the plurality of holes of the gas supply nozzle.
- the raw material gas is supplied from a plurality of holes of a gas supply nozzle and the reaction gas.
- the height of the base support to be accommodated in the reaction tube is controlled by the vertical drive unit, and the distance between the plurality of substrates held by the substrate support and the plurality of holes of the gas supply nozzle is controlled. The (height) is adjusted according to the preset conditions.
- the raw material gas and the reaction gas are supplied from a plurality of holes of the gas supply nozzles arranged at the same interval as the vertical interval of the plurality of substrates held by the substrate support. It is the one that was made.
- the height of the substrate support accommodated in the reaction tube is determined by the vertical drive mechanism unit to supply the raw material gas and the reaction gas from a plurality of holes of the gas supply nozzle. It is controlled so that the interval (height) between the plurality of substrates held by the substrate support and the plurality of gas supply nozzles is changed and repeated.
- the vertical drive mechanism unit to supply the raw material gas and the reaction gas from a plurality of holes of the gas supply nozzle. It is controlled so that the interval (height) between the plurality of substrates held by the substrate support and the plurality of gas supply nozzles is changed and repeated.
- a substrate processing apparatus having a control unit for controlling a substrate support elevating mechanism so as to change the vertical positional relationship between a substrate and a partition plate.
- Appendix 2 The device according to Appendix 1. It has a partition plate support elevating mechanism that elevates and elevates the partition plate support.
- Appendix 3 The device according to Appendix 2.
- the control unit raises and lowers either the substrate support elevating mechanism or the partition plate support elevating mechanism to change the vertical positional relationship between the partition plate and the substrate.
- Appendix 4 The device according to Appendix 2.
- the elevating shaft of the substrate support elevating mechanism and the elevating shaft of the partition plate support elevating mechanism are configured concentrically.
- the elevating shaft of the substrate support elevating mechanism means the support portion 9441. Further, the elevating shaft of the partition plate support elevating mechanism means a support 9440.
- the elevating shaft of the substrate support lowering mechanism is arranged in the elevating shaft of the partition plate support elevating mechanism.
- the elevating shaft of the partition plate support elevating mechanism is arranged in the elevating shaft of the substrate support elevating mechanism.
- [Appendix 7] The device according to Appendix 2.
- the drive unit of the substrate support elevating mechanism is configured to elevate and elevate the drive unit of the partition plate support elevating mechanism.
- Appendix 8 The device according to Appendix 2.
- a transport chamber is provided below the processing chamber, and the lower end of the transport chamber is It is sealed by the substrate support elevating mechanism and the partition plate support elevating mechanism.
- Appendix 9 The device according to Appendix 2. It has a lid that supports the partition plate support, and has a lid. The lower end of the processing chamber for processing the substrate is closed by the lid.
- [Appendix 10] The device according to Appendix 2. Has a lid to support the substrate support, The lower end of the processing chamber for processing the substrate is closed by the lid.
- [Appendix 11] The device according to Appendix 1.
- the diameter of the partition plate is configured to be larger than the diameter of the substrate.
- [Appendix 12] The device according to Appendix 1.
- the area of the partition plate is configured to be larger than the area of the substrate.
- [Appendix 13] The device according to Appendix 1.
- the control unit is based on the distance data between the substrate and the partition plate. Controls either or both of the board support elevating mechanism and the partition plate support elevating mechanism.
- the distance data is an actual distance, n times from a predetermined distance, and the like.
- the distance data is recorded in the RAM 260b, the storage device 260c, or the like.
- [Appendix 14] The device according to Appendix 1.
- the control unit is based on the set film thickness data.
- the distance between the upper surface of the substrate and the partition plate is changed by driving either or both of the substrate support elevating mechanism and the partition plate support elevating mechanism.
- the set film thickness data includes any of film thickness information, film thickness distribution, film thickness uniformity, film thickness difference ⁇ X% between the center and the outer circumference, actual film thickness data, etc., and is the recipe data. Another data. These data may be obtained via the network.
- the relationship between the set film thickness data and the distance is a data table showing at least the relationship between the film thickness (data such as temperature, gas flow rate, pressure, supply time, gas type, surface area of the substrate, etc.) and pitch. Refer to and decide. Alternatively, it may be calculated using a predetermined function.
- the pitch (position of the first elevating mechanism) is calculated based on the set film thickness data and the related data.
- Data such as the set film thickness data and the data table shown here are recorded in the RAM 260b, the storage device 260c, and the like.
- Appendix 15 The device according to Appendix 1.
- the control unit makes the distance between the upper surface of the substrate and the partition plate smaller than the transport position (home position). Controls either or both of the substrate support elevating mechanism and the partition plate support elevating mechanism.
- [Appendix 16] The device according to Appendix 1.
- the control unit makes the distance between the upper surface of the substrate and the partition plate larger than the transport position (home position). Controls either or both of the substrate support elevating mechanism and the partition plate support elevating mechanism.
- the partition plate has a notch in the board support, The partition plate may support the substrate.
- Substrate processing device 101 Heater 110 .
- Reaction tube 120 Gas supply nozzle 121 ... Hole 200 .
- Partition plate support part 203 ... Partition plate 260 .
- Controller 300 ... Board support (boat) 400 ... Vertical drive mechanism 500 ... Storage room.
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Abstract
Description
[基板処理装置100]
基板処理装置100は、鉛直方向に延びた円筒形状の反応管110と、反応管110の外周に設置された加熱部(炉体)としてのヒータ101と、ガス供給部を構成するガス供給用のノズル120を備える。ヒータ101は上下方向に複数のブロックに分割されて個々のブロックごとに温度を設定することが可能なゾーンヒータにより構成されている。
チャンバ180は反応管110の下部にマニホールド111を介して設置され、収納室500を備えている。収納室500では、基板搬入口310を介して図示していない移載機により基板10を基板支持具(ボート)300に載置(搭載)したり、移載機により基板10を基板支持具(以下、単にボートと記す場合もある)300から取り出すことが行われる。
基板支持部は、少なくとも基板支持具(ボート)300で構成され、収納室500の内部で基板搬入口310を介して図示していない移載機により基板10の移し替えを行ったり、移し替えた基板10を反応管110の内部に搬送して基板10の表面に薄膜を形成する処理を行ったりする。なお、基板支持部に、仕切板支持部200を含めて考えても良い。
図1に示す様に、基板処理装置100は、各部の動作を制御するコントローラ260と接続されている。
次に、図1及び図2で説明した基板処理装置を用いて基板上に膜を形成する基板処理工程(成膜工程)について図7を用いて説明する。
(a)反応管110の内部に収容された基板10に対して、ガス供給用のノズル120からSi2Cl6(六塩化二ケイ素)ガスを供給する工程と、
(b)反応管110の内部の残留ガスを除去する工程と、
(c)反応管110の内部に収容された基板10に対して、ガス供給用のノズル120からO2(酸素)(又はO3(オゾン)又はH2O(水))を供給する工程と、
(d)反応管110の内部の残留ガスを除去する工程と、
を有し、上記(a)~(d)の工程を複数回繰り返して、SiO2層を基板10上に形成する。
なお、本明細書において「基板」という言葉を用いた場合も、「ウェハ」という言葉を用いた場合と同義である。
まず、CPU260aは、記憶装置260cに記憶されたプロセスレシピ及び関連するデータベースを読み込んで、プロセス条件を設定する。記憶装置260cに替えて、ネットワークを介してプロセスレシピ及び関連するデータベースを入手するようにしてもよい。
ボート300を収納室500に収納した状態で、上下駆動用モータ410を駆動してボールねじ411を回転駆動し、ボート300をピッチ送りして、収納室500の基板搬入口310を介して、新たな基板10を1枚ずつボート300に搭載して保持する。
ボート300が反応管110の内部に搬入された状態で、反応管110の内部を図示していない真空ポンプによって排気管130から真空排気し、反応管110の内部が所望の圧力となるように調整する。
図示していない真空ポンプによって真空排気された状態で、ステップS704で読み込んだレシピに基づいて、反応管110の内部が所望の圧力(真空度)となるように反応管110の内部をヒータ101によって加熱する。この際、反応管110の内部が所望の温度分布となるように、図示していない温度センサが検出した温度情報に基づきヒータ101への通電量がフィードバック制御される。ヒータ101による反応管110の内部の加熱は、少なくとも基板10に対する処理が完了するまでの間は継続して行われる。
また、ヒータ101により加熱されることによる基板の昇温時は、ピッチ(基板10の裏面と基板10の下側の仕切板203との間隔)を狭くする(図3Cの状態)。このピッチを狭くすることは、少なくとも原料ガス供給前まで行う。原料ガスを供給以降は、ピッチを昼ゲル。また、原料ガス供給時と反応ガス供給時とでピッチを異ならせても良い。さらに、原料ガス(反応ガス)の供給中にピッチを可変させても良い。さらにまた、基板支持具と仕切板支持部とが相対的に上下方向移動する動作タイミングは任意に設定可能である。
続いて、第1の層として例えばSiO2層を形成するために、以下のような詳細なステップを実行する。
(原料ガス供給):S7051
まず、回転駆動用モータ430を回転駆動して、回転伝達ベルト432を介して支持具440を回転させることにより、支持具440に支持されている仕切板支持部200とボート300とを回転させる。
反応管110の内部に所定の時間ノズル120を介して原料ガスであるSi2Cl6ガスを供給して基板10の表面にSi含有層が形成された後、Si2Cl6ガスの供給を停止する。このとき、図示していない真空ポンプにより反応管110の内部を真空排気し、反応管110内に残留する未反応もしくはSi含有層形成に寄与した後のSi2Cl6ガスを反応管110の内部から排除する。
反応管110の内部の残留ガスを除去した後、回転駆動用モータ430を駆動してボート300の回転を維持した状態で、反応ガスであるO2ガスをノズル120から反応管110の内部に供給し、反応に寄与しなかったO2ガスを排気管130から排気する。これにより、基板10に対してO2が供給されることとなる。具体的に供給するO2ガスの流量は、0.2~10slmの範囲、より好ましくは、1~5slmの範囲に設定する。
SiO2層を形成した後、ノズル120から反応管110の内部へのO2ガスの供給を停止する。そして、ステップS7052と同様の処理手順により、反応管110の内部に残留する未反応もしくはSiO2層の形成に寄与した後のO2ガスや反応副生成物を反応管110の内部から排除する。
ステップS705における上記した詳細ステップS7051~ステップS7055を順に行うサイクルを1回以上(所定回数(n回))行うことにより、基板10上に、所定の厚さ(例えば0.1~2nm)のSiO2層を形成する。上述のサイクルは、複数回繰り返すのが好ましく、例えば10~80回ほど行うことが好ましく、より好ましくは10~15回ほど行う。
上記ステップS705の一連の工程を所定の回数繰り返して実行した後、ノズル120からN2ガスを反応管110の内部へ供給し、排気管130から排気する。N2ガスはパージガスとして作用し、これにより反応管110の内部が不活性ガスでパージされ、反応管110の内部に残留するガスや副生成物が反応管110内から除去される。
(基板搬出):S707
その後、上下駆動用モータ410を駆動してボールねじ411を逆方向に回転駆動し、仕切板支持部200とボート300を反応管110から下降させて、表面に所定の厚さの薄膜が形成された基板10を搭載したボート300を収納室500に搬送する。
<本開示による好ましい態様>
以下に、本開示による好ましい態様を記載する。
[付記1]
複数の基板を載置する基板支持具と、
基板支持具とは別体に構成され、
前記基板それぞれの上部に配置される複数の仕切板と、
前記複数の仕切板を支持する支持部を有する仕切板支持部と、
基板支持具を昇降する基板支持具昇降機構と、を有し、
基板と仕切板との上下方向の位置関係を変更させる様、基板支持具昇降機構を制御する制御部と、を有する基板処理装置が提供される。
[付記2]
付記1に記載の装置であって、
仕切板支持部を昇降する仕切板支持部昇降機構を有する。
[付記3]
付記2に記載の装置であって、
制御部は、基板支持具昇降機構と、仕切板支持部昇降機構のいずれかを昇降させて仕切板と基板との上下方向の位置関係を変更する。
[付記4]
付記2に記載の装置であって、
前記基板支持具昇降機構の昇降軸と前記仕切板支持部昇降機構の昇降軸は同心状に構成される。
このように、各昇降軸を同心状に構成することで、回転機構の構造をシンプル化できる。
また、基板支持具回転と仕切板支持部の回転の同期化制御が容易となる。なお、基板支持具昇降機構の昇降軸とは、支持部9441を意味する。また、仕切板支持部昇降機構の昇降軸は、支持具9440を意味する。
[付記5]
付記2に記載の装置であって、
前記基板支持具降機構の昇降軸は、前記仕切板支持部昇降機構の昇降軸の中に配置される。
[付記6]
付記2に記載の装置であって、
前記仕切板支持部昇降機構の昇降軸は、前記基板支持具昇降機構の昇降軸の中に配置される。
[付記7]
付記2に記載の装置であって、
前記基板支持具昇降機構の駆動部は、前記仕切板支持部昇降機構の駆動部も昇降させるよう構成される。
[付記8]
付記2に記載の装置であって、
処理室の下方に搬送室が設けられ、搬送室の下方端部は、
前記基板支持具昇降機構と前記仕切板支持部昇降機構で密閉されている。
[付記9]
付記2に記載の装置であって、
仕切板支持部を支持する蓋体を有し、
基板を処理する処理室の下端は、前記蓋体で閉塞される。
[付記10]
付記2に記載の装置であって、
基板支持具を支持する蓋体を有し、
基板を処理する処理室の下端は、前記蓋体で閉塞される。
[付記11]
付記1に記載の装置であって、
前記仕切板の直径は、前記基板の直径よりも大きく構成される。
[付記12]
付記1に記載の装置であって、
前記仕切板の面積は、前記基板の面積よりも大きく構成される。
[付記13]
付記1に記載の装置であって、
前記制御部は、基板と仕切板の間の距離データに基づいて、
基板支持具昇降機構と仕切板支持部昇降機構のいずれか又は両方を制御する。
ここで、距離データは、実際の距離、所定の距離からn倍、等である。ここで、距離データは、RAM260bや記憶装置260c等に記録される。
[付記14]
付記1に記載の装置であって、
前記制御部は、設定膜厚データに基づいて、
前記基板の上面と前記仕切板との距離を基板支持具昇降機構と仕切板支持部昇降機構のいずれか又は両方を駆動して変更させる。
ここで、設定膜厚データは、膜厚情報、膜厚分布、膜厚の均一性、中心と外周の膜厚差±X%、実際の膜厚データなどの何れかを含み、レシピデータとは別のデータである。これらのデータを、ネットワークを介して入手するようにしてもよい。また、設定膜厚データと距離との関係は、少なくとも膜厚(温度、ガス流量、圧力、供給時間、ガス種、基板の表面積等のデータも含んで良い)とピッチの関係を示すデータテーブルを参照して決定する。又は、所定の関数を用いて算出するようにしてもよい。この場合、設定膜厚データと関係データとを基に、ピッチ(第1昇降機構の位置)を算出する。ここに示す設定膜厚データ、データテーブル、等のデータは、RAM260bや記憶装置260c等に記録される。
[付記15]
付記1に記載の装置であって、
前記制御部は、前記基板の上面と前記仕切板との距離を搬送ポジション(ホーム位置)よりも小さくする様に、
前記基板支持具昇降機構と仕切板支持部昇降機構のいずれか又は両方を制御する。
[付記16]
付記1に記載の装置であって、
前記制御部は、前記基板の上面と前記仕切板との距離を搬送ポジション(ホーム位置)よりも大きくする様に、
前記基板支持具昇降機構と仕切板支持部昇降機構のいずれか又は両方を制御する。
[付記17]
付記1に記載の装置であって、
基板の昇温時のピッチを可変させる。
この場合、ヒータ101により加熱されることによる昇温時は、ピッチ(基板10の裏面と基板10の下側の仕切板203との間隔)を狭くする(図3Cの状態)。このピッチを狭くすることは、少なくとも原料ガス供給前まで行う。
また、原料ガス供給時と反応ガス供給時とで異ならせても良い。
さらに、原料ガス(反応ガス)の供給中にピッチを可変させても良い。
さらにまた、基板支持具と仕切板支持部の動作タイミングは任意に設定可能である。
[付記18]
付記17に記載の装置であって、
基板の昇温時は、基板裏面と仕切り板との距離を処理時よりも近接させる。
[付記19]
付記17に記載の装置であって、
仕切り板に基板支持部の切り欠きを有し、
仕切り板が基板を支持する様にしても良い。
Claims (18)
- 複数の基板を上下方向に間隔をあけて保持する基板支持具と前記基板支持具に保持された前記複数の基板の間に配置された複数の仕切板を支持する仕切板支持部とを有する基板保持具と、
前記基板支持具に前記複数の基板を保持した状態で前記基板保持具を収容する反応管と、
前記基板保持具を上下方向に駆動して前記反応管の内部に対して出し入れする第1の駆動部と、
前記第1の駆動部により前記基板保持具と共に前記上下方向に駆動されて前記基板保持具が前記反応管の内部に挿入された状態で前記基板保持具を回転させるとともに前記基板支持具又は前記仕切板支持部のいずれか一方を前記上下方向に駆動して前記基板支持具に保持された前記複数の基板と前記仕切板支持部に支持された前記複数の仕切板との間隔を変化させる第2の駆動部と、
前記反応管の周囲に設けられ、前記基板を加熱する加熱部と、
前記反応管の内部に収容された前記基板保持具の前記基板支持具に保持された前記複数の基板に対してガスを供給する穴が形成されたノズルを備えたガス供給部と、
前記ガス供給部から供給されたガスを前記反応管から排気する排気部と、
前記第1の駆動部を駆動して前記基板保持具を前記反応管の内部に挿入した状態で、前記第2の駆動部を駆動して前記複数の基板又は前記複数の仕切板と、前記ノズルに形成された前記ガスを供給する穴との前記上下方向の相対位置を予め設定した条件に応じて変化させながら前記複数の基板に前記ガスを供給するよう前記ガス供給部と前記第2の駆動部とを制御する制御部と、
を有する基板処理装置。 - 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動して前記ノズルの前記ガスを供給する穴に対する高さを予め設定した条件に応じて変化させる基板支持具上下駆動部とを備える請求項1記載の基板処理装置。
- 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動して前記仕切板の前記ガスを供給する穴に対する高さを予め設定した条件に応じて変化さる仕切板支持部上下駆動部とを備える請求項1記載の基板処理装置。
- 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動する基板支持具上下駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動する仕切板支持部上下駆動部とを備える請求項1記載の基板処理装置。
- 前記基板保持具の前記基板支持具と前記仕切板支持部とは真空ベローズで接続されている請求項1乃至4の何れか1項に記載の基板処理装置。
- 前記第2の駆動部は、大気中に配置されている請求項5に記載の基板処理装置。
- 前記第2の駆動部と、前記第1の駆動部で駆動された前記反応管から下降した状態の前記基板保持具とを収納する収納室を更に備える請求項6記載の基板処理装置。
- 前記収納室は、前記第1の駆動部を更に内部に収納する請求項7記載の基板処理装置。
- 前記収納室の内部は外部に対して密閉された状態で形成されており、前記第2の駆動部は前記収納室に対して密閉されて内部が大気圧の容器の内部に収納された状態で前記収納室の内部に配置され、前記第2の駆動部は前記収納室の外部に配置された前記第1の駆動部により前記上下方向に駆動される請求項7記載の基板処理装置。
- 複数の基板を上下方向に間隔をあけて保持する基板支持具と前記基板支持具に保持された前記複数の基板の間に配置された仕切板を支持する仕切板支持部とを有する基板保持具を前記上下方向に駆動して反応管の内部に対して出し入れする第1の駆動部と、
前記第1の駆動部により前記基板保持具と共に前記上下方向に駆動されて前記基板保持具が前記反応管の内部に挿入された状態で前記基板保持具を回転させるとともに前記基板保持具と仕切板支持部との相対的な位置を前記上下方向に変位させる第2の駆動部と、
を備える昇降機構。 - 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動する基板支持具上下駆動部とを備える請求項10記載の昇降機構。
- 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動する仕切板支持部上下駆動部とを備える請求項10記載の昇降機構。
- 前記第2の駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動する基板支持具上下駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動する仕切板支持部上下駆動部とを備える請求項10記載の昇降機構。
- 複数の基板を上下方向に間隔をあけて保持する基板支持具と前記基板支持具に載置された前記複数の基板の間に配置された複数の仕切板を支持する仕切板支持部とを有する基板保持具を第1の上下駆動部で駆動して反応管の内部に収容する工程と、
前記複数の基板を前記反応管の周囲を囲んで配置された加熱部で加熱する工程と、
ガス供給用のノズルに形成された複数のガス供給穴から前記複数の基板にガスを供給する工程と、
前記ガスを排気する工程と、
を有し、
前記複数の基板に前記ガスを供給する工程において、予め設定した条件に応じて、前記ガス供給用のノズルの前記複数のガス供給穴に対する前記複数の基板の高さ又は前記仕切板の高さを第2の上下駆動部で調整する
半導体装置の製造方法。 - 前記第2の上下駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動する基板支持具上下駆動部とを備え、前記基板支持具上下駆動部で前記複数の基板の前記ガス供給用のノズルの前記複数のガス供給穴に対する高さを予め設定した条件に応じて変化させる請求項14記載の半導体装置の製造方法。
- 前記第2の上下駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動する仕切板支持部上下駆動部とを備え、前記仕切板支持部上下駆動部で前記複数の仕切板の前記複数のガス供給穴に対する高さを予め設定した条件に応じて変化させる請求項14記載の半導体装置の製造方法。
- 前記第2の上下駆動部は、前記基板支持具と前記仕切板支持部とを回転駆動する回転駆動部と、前記仕切板支持部に対して前記基板支持具を前記上下方向に駆動する基板支持具上下駆動部と、前記基板支持具に対して前記仕切板支持部を前記上下方向に駆動する仕切板支持部上下駆動部とを備え、前記基板支持具上下駆動部で前記複数の基板の前記ガス供給用のノズルの前記複数のガス供給穴に対する高さを予め設定した条件に応じて変化させるとともに、前記仕切板支持部上下駆動部で前記仕切板の前記ガスを供給する穴に対する高さを予め設定した条件に応じて変化させる請求項14記載の半導体装置の製造方法。
- 複数の基板を上下方向に間隔をあけて保持する基板支持具と前記基板支持具に保持された前記複数の基板の間に配置された複数の仕切板を支持する仕切板支持部とを有する基板保持具を第1の上下駆動部で駆動して反応管の内部に収容する手順と、
前記反応管の周囲を囲んで配置された加熱部で前記複数の基板を加熱する手順と、
ガス供給用のノズルに形成された複数のガス供給穴から前記複数の基板にガスを供給する手順と、
前記ガスを排気する手順と、
を有し、
前記複数の基板に前記ガスを供給する手順は、予め設定した条件に応じて、前記ガス供給用のノズルの前記複数のガス供給穴に対する前記複数の基板の高さ又は前記複数の仕切板の高さを第2の上下駆動部で調整する手順を含む
コンピュータによって基板処理装置に実行させるプログラム。
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