WO2022064606A1 - 半導体装置の製造方法及び基板処理装置並びにプログラム - Google Patents
半導体装置の製造方法及び基板処理装置並びにプログラム Download PDFInfo
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- WO2022064606A1 WO2022064606A1 PCT/JP2020/036075 JP2020036075W WO2022064606A1 WO 2022064606 A1 WO2022064606 A1 WO 2022064606A1 JP 2020036075 W JP2020036075 W JP 2020036075W WO 2022064606 A1 WO2022064606 A1 WO 2022064606A1
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- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Definitions
- the present disclosure relates to a manufacturing method of a semiconductor device for processing a substrate in a semiconductor device manufacturing process, a substrate processing device, and a program.
- the substrate In the heat treatment of the substrate (wafer) in the semiconductor device manufacturing process, the substrate is held by the substrate holder and the substrate holder is carried into the processing chamber. After that, the processing gas is introduced into the processing chamber while the processing chamber is heated, and the thin film forming treatment is performed on the substrate.
- Patent Document 1 when a nitride film is formed on a pattern including recesses formed on the surface of a substrate, a first layer formed by supplying a raw material gas is nitrided to form an NH termination, and plasma is formed. It is described that the embedding characteristics of the nitrided film in the recesses are improved by repeatedly modifying a part of the N-terminated film by the treatment.
- the present disclosure provides a technique capable of improving the step coverage of a film formed in a forming pattern on a substrate.
- a substrate support for supporting a substrate and a partition plate support for supporting an upper partition plate arranged on an upper portion of the substrate supported by the substrate support.
- a method for manufacturing a semiconductor device comprising a second gas supply step of supplying a second gas to the substrate from a gas supply port with a distance between the substrate and the upper partition plate as a second interval. ..
- FIG. 3C is a diagram showing a visualization of the concentration distribution of the material gas on the surface of the substrate in the processing chamber of the substrate processing apparatus preferably used in one aspect of the present disclosure, and the distance between the substrate and the partition plate is shown in FIG. 3 (c).
- FIG. 3 (c) It is a perspective view of a substrate which shows the concentration distribution of a material gas on the surface of a substrate when it is set widely as described above.
- FIG. 7A It is a flow diagram which shows the outline of the semiconductor device manufacturing process which concerns on Example 1.
- FIG. 7A It is a detailed flow chart which shows the detail of the step S705 of the flow chart of FIG. 7A.
- It is sectional drawing of the pattern of the trench structure formed in the substrate which is preferably used in one aspect of this disclosure.
- It is sectional drawing of the pattern of the trench structure formed on the substrate which is preferably used in one aspect of this disclosure, and shows the state which the layer containing Si is formed on the surface of the substrate including the inside of the pattern of a trench structure.
- a boat on which a plurality of substrates are mounted a plurality of partition plates which are configured separately from the boat and are arranged on the upper part of each of the substrates mounted on the boat, and the upper and lower portions of the substrate and the partition plate.
- the film formation process is performed by switching the distance between the partition plate and the substrate and switching the gas type to be supplied during the film formation process.
- a film is formed on the pattern formed above so that a film having good step coverage for the pattern can be formed.
- FIGS. 1 and 2 An aspect of the present disclosure will be described with reference to FIGS. 1 and 2.
- the substrate processing apparatus 100 includes a cylindrical reaction tube 110 extending in the vertical direction, a heater 101 as a heating unit (furnace body) installed on the outer periphery of the reaction tube 110, and a gas supply unit constituting the gas supply unit.
- a nozzle 120 is provided.
- the heater 101 is composed of a zone heater that is divided into a plurality of blocks in the vertical direction and can set the temperature for each block.
- the reaction tube 110 is made of a material such as quartz or SiC.
- the inside of the reaction pipe 110 is exhausted from the exhaust pipe 130 constituting the exhaust unit by an exhaust means (not shown).
- the inside of the reaction tube 110 is hermetically sealed with respect to the outside air by means (not shown).
- the technique of the present disclosure can be applied even if a second reaction tube is provided inside the reaction tube 110.
- the gas supply nozzle 120 (hereinafter, may be simply referred to as a nozzle) 120 has a large number of holes 121 for supplying gas inside the reaction tube 110.
- the raw material gas, the reaction gas and the inert gas (carrier gas) are introduced into the reaction tube 110 through a large number of holes 121 formed in the gas supply nozzle 120.
- the raw material gas, reaction gas, and inert gas (carrier gas) are mass flow controllers (MFC: Mass Flow Controller) that are not shown because of the raw material gas supply source, reaction gas supply source, and inert gas supply reduction that are not shown, respectively.
- MFC Mass Flow Controller
- the flow rate is adjusted by, and is supplied to the inside of the reaction tube 110 from a large number of holes 121 formed in the nozzle 120.
- the inside of the reaction pipe 110 is exhausted to a vacuum from an exhaust pipe 130 formed in the manifold 111 by an exhaust means (not shown).
- the chamber 180 is installed below the reaction tube 110 via the manifold 111 and comprises a storage chamber 500.
- the substrate 10 is mounted (mounted) on the substrate support (board support portion, boat) 300 by a transfer machine (not shown) via the substrate carry-in entrance 310, or the substrate 10 is mounted by the transfer machine. It is taken out from the board support 300.
- the chamber 180 is made of a metal material such as SUS (stainless steel) or Al (aluminum).
- a substrate support 300, a partition plate support 200, and a substrate support 300 and a partition plate support 200 are driven in the vertical and rotational directions. It includes a vertical drive mechanism unit 400 that constitutes the first drive unit.
- the board support portion is composed of at least a board support 300, and the board 10 is transferred by a transfer machine (not shown) inside the storage chamber 500 via the board carry-in port 310, or the transferred board 10 is transferred. It is carried inside the reaction tube 110 to form a thin film on the surface of the substrate 10.
- the substrate support portion may include the partition plate support portion 200.
- a plurality of boards 10 are placed at predetermined intervals by a plurality of support rods 302 supported by the base 301.
- the plurality of substrates 10 supported by the support rod 302 are partitioned by a disk-shaped partition plate 203 fixed (supported) to the columns 202 supported by the partition plate support portion 200 at predetermined intervals. ..
- the partition plate 203 is arranged on either or both of the upper part and the lower part of the substrate 10.
- the predetermined spacing between the plurality of boards 10 mounted on the board support 300 is the same as the vertical spacing of the partition plate 203 fixed to the partition plate support portion 200. Further, the diameter of the partition plate 203 is formed to be larger than the diameter of the substrate 10.
- the board support 300 is a plurality of support rods 302 that vertically support a plurality of boards 10, for example, about 5 to 50 boards 10 in multiple stages in the vertical direction.
- the vertical distance between the top and bottom of the substrate 10 that is supported in multiple stages in the vertical direction is set to, for example, about 40 mm to 70 mm.
- the base 301 and the plurality of support rods 302 constituting the substrate support 300 are formed of a material such as quartz or SiC.
- the partition plate 203 of the partition plate support portion 200 is also referred to as a separator.
- the partition plate support portion 200 and the substrate support 300 are vertically driven between the reaction tube 110 and the storage chamber 500 by the vertical drive mechanism portion 400, and around the center of the substrate 10 supported by the substrate support 300. Driven in the direction of rotation.
- the vertical drive mechanism unit 400 constituting the first drive unit vertically drives the vertical drive motor 410, the rotary drive motor 430, and the substrate support 300 as drive sources. It is equipped with a boat up / down mechanism 420 equipped with a linear actuator as a board support elevating mechanism that drives in a direction.
- the vertical drive motor 410 as a partition plate support elevating mechanism rotates the ball screw 411 to move the nut 412 screwed to the ball screw 412 up and down along the ball screw 412.
- the partition plate support portion 200 and the substrate support 300 are driven in the vertical direction between the reaction tube 110 and the storage chamber 500 together with the base plate 402 fixing the nut 412.
- the base plate 402 is also fixed to the ball guide 415 that is engaged with the guide shaft 414, and is configured to be able to move smoothly in the vertical direction along the guide shaft 414.
- the upper end and the lower end of the ball screw 411 and the guide shaft 414 are fixed to the fixing plates 413 and 416, respectively.
- the partition plate support elevating mechanism may include a member for transmitting the power of the vertical drive motor 410.
- the rotary drive motor 430 and the boat vertical mechanism 420 equipped with a linear actuator form a second drive unit, and are fixed to the base plate 402 to the base flange 401 as a lid supported by the side plate 403.
- the side plate 403 By using the side plate 403, it is possible to suppress the diffusion of particles emitted from the vertical mechanism, the rotation mechanism, and the like.
- the shape to cover is cylindrical or columnar.
- a hole communicating with the transfer chamber is provided on a part of the cover shape or on the bottom surface. The communication holes make the inside of the cover shape similar to the pressure in the transfer chamber.
- a support column may be used instead of the side plate 403. In this case, maintenance of the vertical mechanism and the rotation mechanism becomes easy.
- the rotation drive motor 430 drives the rotation transmission belt 432 that engages with the tooth portion 431 attached to the tip portion, and rotatesly drives the support 440 that engages with the rotation transmission belt 432.
- the support 440 supports the partition plate support portion 200 by the base portion 201, and is driven by the rotation drive motor 430 via the rotation transmission belt 432 to connect the partition plate support portion 200 and the substrate support portion 300. Rotate.
- the support 440 is partitioned from the inner cylinder portion 4011 of the base flange 401 by a vacuum seal 444, and the lower portion thereof is rotatably guided to the inner cylinder portion 4011 of the base flange 401 by a bearing 445.
- the boat vertical mechanism 420 equipped with a linear actuator drives the shaft 421 in the vertical direction.
- a plate 422 is attached to the tip of the shaft 421.
- the plate 422 is connected to a support portion 441 fixed to the base 301 of the boat 300 via a bearing 423.
- the support portion 441 is supported by the support tool 440 via the linear guide bearing 442.
- the shaft 421 is driven in the vertical direction by the boat vertical mechanism 420 equipped with a linear actuator, the shaft 421 is fixed to the substrate support 300 with respect to the support 440 fixed to the partition plate support 200.
- the supported support portion 441 can be driven relatively in the vertical direction.
- this embodiment is not limited to this, and the support tool 440 and the support portion 441 may be arranged separately rather than concentrically.
- the support 440 fixed to the partition plate support 200 and the support 441 fixed to the board support 300 are connected by a vacuum bellows 443.
- An O-ring 446 for vacuum sealing is installed on the upper surface of the base flange 401 as a lid, and as shown in FIG. 2, the upper surface of the base flange 401 is pressed against the chamber 180 by being driven by the vertical drive motor 410.
- the inside of the reaction tube 110 can be kept airtight by raising it to a certain position.
- the O-ring 446 for vacuum sealing is not always necessary, and the upper surface of the base flange 401 is pressed against the chamber 180 without using the O-ring 446 for vacuum sealing to keep the inside of the reaction tube 110 airtight. You may. Further, the vacuum bellows 443 does not necessarily have to be provided.
- the substrate support portion is inserted into the reaction tube 110 by being driven by the vertical drive motor 410 and raised until the upper surface of the base flange 401 is pressed against the chamber 180 as shown in FIG.
- the raw material gas, the reaction gas, or the inert gas (carrier gas) is introduced into the reaction tube 110 through a large number of holes 121 formed in the gas supply nozzle 120.
- the pitch of the large number of holes 121 formed in the gas supply nozzle 120 is the same as the vertical spacing of the substrate 10 mounted on the boat 300 and the vertical spacing of the partition plate 203 fixed to the partition plate support portion 200. Is. It should be noted that a plurality of nozzles may be inserted from the lateral direction (horizontal direction with respect to the substrate 10) so as to supply gas to each of the plurality of substrates 10.
- the position in the height direction of the partition plate 203 fixed to the support column 202 of the partition plate support portion 200 is fixed, whereas it is linear.
- the boat up / down mechanism 420 provided with the actuator to move the support portion 441 fixed to the base 301 of the board support 300 up and down, the height of the board 10 supported by the board support 300 with respect to the partition plate 203.
- the position in the vertical direction can be changed. Since the position of the hole 121 formed in the gas supply nozzle 120 is also fixed, it is possible to change the position (relative position) of the substrate 10 supported by the boat 300 with respect to the hole 121 in the height direction. can.
- the position of the substrate 10 supported by the substrate support 300 is moved in the vertical direction by driving the boat vertical mechanism 420 equipped with the linear actuator with respect to the reference positional relationship of the transport as shown in FIG. 3 (a).
- the position of the substrate 10 is made higher than the transport position (home position) 10-1 as shown in FIG. 3 (b).
- the gap G1 between the upper partition plate 2032 and the upper partition plate 2032 is narrowed, or the position of the substrate 10 is made lower than the transport position (home position) 10-1 as shown in FIG. 3 (c).
- the gap G2 between and 2032 can be widened.
- the position of the substrate 10 is raised to narrow the gap G1 between the upper partition plate 2032, and as shown in FIG. 3 (c), the position of the substrate 10 is lowered. Then, in a state where the gap G2 between the upper partition plate 2032 and the partition plate 2032 is widened, the in-plane distribution of the film formed on the surface of the substrate 10 when gas is supplied from the hole 121 formed in the nozzle 120. The results of the simulation are shown in FIG.
- the point sequence 510 indicated by Narrow is in a state as shown in FIG. 3 (b), that is, the position of the substrate 10 is raised to narrow the gap G1 between the substrate 10 and the upper partition plate 2032, and the substrate 10 is narrowed.
- the film is formed in a state where the film is higher than the position of the gas flow 122 ejected from the hole 121.
- a relatively thick film is formed in the peripheral portion of the substrate 10, and the thickness of the film formed in the central portion of the substrate 10 is a concave film thickness distribution thinner than that in the peripheral portion.
- the state as shown in FIG. 3C that is, the position of the substrate 10 is lowered to widen the gap G2 between the substrate 10 and the upper partition plate 2032, and the substrate is widened.
- the case where the film formation is formed in the state where 10 is lower than the position of the gas flow 122 ejected from the hole 121 is shown.
- the central portion of the substrate 10 has a convex film thickness distribution in which a relatively thick film is formed as compared with the peripheral portion.
- FIG. 5 shows when the gas is supplied from the direction of arrow 611 when the relationship between the substrate 10 and the holes 121 formed in the partition plate 2032 and the nozzle 120 is set to the positional relationship as shown in FIG. 3 (c).
- the result of obtaining the distribution of the partial pressure of the gas on the surface of the substrate 10 by simulation is shown.
- the film thickness distribution in FIG. 4 corresponds to the film thickness distribution in the aa'cross section of FIG.
- the holes 121 formed in the nozzle 120 are formed.
- the partial pressure of the gas is relatively high in the portion displayed in dark color from the portion close to the portion to the central portion of the substrate 10.
- the partial pressure of the gas in the peripheral portion of the substrate 10 away from the hole 121 formed in the nozzle 120 is relatively low.
- the rotary drive motor 430 is driven to rotate the support 440 to rotate the partition plate support portion 200 and the substrate support 300 to rotate the substrate 10 supported by the substrate support 300. By doing so, it is possible to reduce the variation in film thickness (film thickness distribution) in the circumferential direction of the substrate 10.
- controller As shown in FIG. 1, the board processing apparatus 100 is connected to a controller 260 that controls the operation of each unit.
- the controller 260 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a storage device 260c, and an input / output port (I / O port) 260d. There is.
- the RAM 260b, the storage device 260c, and the I / O port 260d are configured so that data can be exchanged with the CPU 260a via the internal bus 260e.
- the controller 260 is configured to be connectable to an input / output device 261 configured as, for example, a touch panel or the like, or an external storage device 262.
- the storage device 260c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), an SSD (Solid State Drive), or the like.
- a control program for controlling the operation of the board processing device, a process recipe in which the procedure and conditions for board processing described later are described, a database, and the like are readablely stored.
- the process recipe is a combination of the process recipes so that the controller 260 can execute each procedure in the substrate processing process described later and obtain a predetermined result, and functions as a program.
- this program recipe, control program, etc. are collectively referred to as a program.
- program may include only a program recipe alone, a control program alone, or both.
- the RAM 260b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 260a are temporarily held.
- the I / O port 260d includes a board carry-in port 310, a vertical drive motor 410, a boat vertical mechanism 420 equipped with a linear actuator, a rotary drive motor 430, a heater 101, a mass flow controller (not shown), and a temperature regulator (not shown). ), Vacuum pump (not shown), etc.
- connection in the present disclosure includes the meaning that each part is connected by a physical cable, but means that the signal (electronic data) of each part can be directly or indirectly transmitted / received. Also includes. For example, equipment for relaying signals and equipment for converting or calculating signals may be provided between each unit.
- the CPU 260a is configured to be able to read and execute a control program from the storage device 260c and read a process recipe from the storage device 260c in response to an input of an operation command from the controller 260 or the like. Then, the CPU 260a operates the opening / closing operation of the board carry-in inlet 310, drives the vertical drive motor 410, drives the boat vertical mechanisms 420 and 1240 provided with the linear actuator, and rotates the drive so as to follow the contents of the read process recipe. It is configured to be able to control the rotation operation of the motor 430, the power supply operation to the heater 101, and the like.
- the controller 260 is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer.
- an external storage device for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a USB memory, a semiconductor such as an SSD or a memory card
- the controller 260 according to the present embodiment can be configured by preparing a memory) 262 and installing a program on a general-purpose computer using the external storage device 262.
- the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 262.
- a communication means such as a network 263 (Internet or a dedicated line) may be used to supply the program without going through the external storage device 262.
- the storage device 260c and the external storage device 262 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, when the term recording medium is used, it may include only the storage device 260c alone, it may include only the external storage device 262 alone, or it may include both of them.
- a trench structure formed on a substrate 10 as shown in FIG. 9 is used as one step of a manufacturing process of a semiconductor device (device).
- the first layer 1220 is formed on the surface of the pattern 1210 (hereinafter, may be simply referred to as a trench 1210) as shown in FIG.
- the first layer contains elements contained in the raw material gas.
- it is reacted with a reaction gas to form a second layer 1221 having an NH termination on the surface as shown in FIG.
- the second layer includes the elements contained in the raw material gas and the limit contained in the reaction gas.
- the Cl terminal 1230 is formed in a part of the NH terminal.
- the step of forming a film containing Si on the substrate and the step of forming NH termination, Cl termination, etc. on the surface of the formed film are executed inside the reaction tube 110 of the substrate processing apparatus 100 described above. As described above, the execution of the manufacturing process is performed by the program execution of the CPU 260a of the controller 260 of FIG.
- the substrate processing step (manufacturing step of the semiconductor device) according to the present embodiment, first, it is driven by the vertical drive motor 410 and raised until the upper surface of the base flange 401 is pressed against the chamber 180 as shown in FIG.
- the substrate support is inserted inside the reaction tube 110.
- the height (interval) of the substrate 10 mounted on the boat 300 with respect to the partition plate 203 is shown in the figure.
- the substrate 10 is lowered to a position lower than the transport position (home position) 10-1 as shown in FIG. 3 (c) to reduce the distance between the substrate 10 and the partition plate 203.
- the raw material gas is supplied from the gas supply nozzle 120 to the substrate 10 housed inside the reaction tube 110, and the raw material gas is supplied to the surface of the substrate 10 and inside the trench structure pattern 1210.
- the raw material gas By supplying the raw material gas, a layer containing Si is formed on the surface of the substrate 10. At this time, since the distance G2 between the substrate 10 and the partition plate 203 is set to be relatively large, the flow velocity of the raw material gas flowing between the substrate 10 and the partition plate 203 becomes relatively slow. As a result, the raw material gas is supplied to the vicinity of the bottom portion 1212 of the trench structure pattern 1210, and as shown in FIG. 10, the first layer 1220 by the raw material gas is formed on the surface including the bottom portion 1212 of the trench structure pattern 1210. To. The first layer contains elements contained in the raw material gas.
- the surface of the first layer 1220 has an NH termination.
- Two layers 1221 are formed.
- the second layer contains an element contained in the raw material gas and an element contained in the reaction gas.
- the bottom portion 1212 is inside the pattern 1210 of the trench structure as in the case of the raw material gas.
- the reaction gas is supplied to the vicinity of the above, and as shown in FIG. 10, NH terminations are also formed on the surface of the first layer 1220 formed on the surface including the bottom 1212 of the pattern 1210 of the trench structure.
- the substrate 10 is formed.
- a step of supplying a film forming inhibitory gas from the gas supply nozzle 120 and replacing a part of the NH termination formed on the surface of the first layer 1220 formed by the raw material gas with the Cl termination 1230, and ( f) The step of removing the residual gas including the reaction gas inside the reaction tube 110 is performed.
- the distance between the substrate 10 and the partition plate 203 is set to G1 which is narrower than the distance G2 when the raw material gas and the reaction gas are supplied, the flow between the substrate 10 and the partition plate 203 is formed.
- the flow velocity of the membrane-inhibiting gas slows down.
- the Cl terminal 1230 is formed on the surface of the substrate 10 and near the entrance portion 1211 of the trench structure pattern 1210.
- the film forming inhibitory gas does not reach the bottom 1212 of the trench structure pattern 1210, and the Cl terminal 1230 is not formed in the bottom 1212 of the trench structure pattern and its vicinity, and the NH terminal is exposed. Will be.
- the Cl terminal 1230 acts as a film formation suppressing layer (adsorption suppressing layer), that is, an inhibitor, with respect to the third layer 1222 formed of the raw material gas.
- adsorption suppressing layer that is, an inhibitor
- the third layer 1222 is formed on the surface of the substrate 10 including the portion where the Cl terminal 1230 is formed, the film forming rate of the third layer 1222 at the portion where the Cl terminal 1230 is formed is the Cl terminal 1230. Is not formed, and the second layer 1221 is slower than the exposed portion.
- the third layer contains elements contained in the raw material gas.
- the film-forming inhibitory layer can also be referred to as an inhibitor, and the film-forming inhibitory gas itself supplied to the substrate for forming the film-forming inhibitory layer can also be referred to as an inhibitor.
- the term inhibitor when used, it may include only the film-forming inhibitory layer, it may contain only the film-forming inhibitory gas, or it may include both of them.
- the surface of the substrate 10 on which the Cl terminal 1230 is formed and the pattern of the trench structure are formed without reducing the film formation rate of the third layer 1222 in the vicinity of the bottom portion 1212 of the trench structure pattern 1210.
- the film formation rate of the third layer 1222 containing Si in the vicinity of the entrance portion 1211 of 1210 can be reduced.
- steps (a) to (f) are repeated a plurality of times to form a thin film on the surface of the trench structure pattern formed on the substrate 10.
- the rotation drive motor 430 is connected to the rotation transmission belt 432.
- a thin film is formed while the support 440 connected by the above is rotationally driven by the rotary drive motor 430.
- the height (interval) of the substrate 10 with respect to the partition plate 203 is set between the substrate 10 and the partition plate 203 by processing the substrate 10 as shown in FIG. 3C when supplying the raw material gas and when supplying the reaction gas. Make the interval G2 large.
- the substrate 10 is raised to reduce the distance G1 between the substrate 10 and the partition plate 203. In this way, the execution is performed while periodically changing the distance between the substrate 10 and the partition plate 203 between G1 and G2.
- the first layer 1220 is made sufficiently thick also in the vicinity of the bottom portion 1212 of the trench structure pattern 1210. It can be formed and the step coverage of the first layer 1220 in the pattern 1210 of the trench structure can be improved as compared with the case where the step of forming the Cl terminal 1230 is not performed.
- the third layer 1222 is laminated on the second layer 1221 in which the Cl termination is partially formed, and the third layer 1222 is made into a Si nitride layer to partially have the Cl termination.
- the bottom portion 1212 of the trench structure pattern 1210 is formed before the entrance portion 1211 of the trench structure pattern 1210 is blocked.
- a third layer 1222 can be laminated with a thickness sufficient to form a signal circuit.
- the word "board” when used in this specification, it means “the board itself” or “a laminate (aggregate) of a board and a predetermined layer or film formed on the surface thereof). ”(That is, a substrate including a predetermined layer, film, or the like formed on the surface) may be used.
- the term “surface of the substrate” when used in the present specification, it means “the surface of the substrate itself (exposed surface)” or “the surface of a predetermined layer or film formed on the substrate”. That is, it may mean “the outermost surface of the substrate as a laminated body”.
- Process condition setting S701
- the CPU 260a reads the process recipe and the related database stored in the storage device 260c and sets the process conditions.
- process recipes and related databases may be obtained via the network.
- FIG. 8 shows an example of the process recipe 800 read by the CPU 260a.
- the main items of the process recipe 800 include gas flow rate 810, temperature data 820, number of processing cycles 830, boat height 840, boat height adjustment time interval 850, and the like.
- the gas flow rate 810 includes items such as a first gas flow rate 811, a second gas flow rate 812, and a carrier gas flow rate 813. However, in FIG. 8, the display of the film forming inhibitory gas flow rate is omitted. As the temperature data 820, there is a heating temperature 821 inside the reaction tube 110 by the heater 101.
- the boat height 840 includes set values of a minimum value (G1) and a maximum value (G2) of the distance between the substrate 10 and the partition plate 203. Is done.
- the boat height adjustment time interval 850 maintains the interval between the substrate 10 and the partition plate 203 at the minimum value as shown in FIG. 3 (b) and the maximum value as shown in FIG. 3 (c).
- Set the time interval for switching from the time to do That is, when the distance between the surface of the substrate 10 and the partition plate 203 (the position of the substrate 10 with respect to the position of the gas supply hole 121 of the nozzle 120) is set as shown in FIG. 3 (b) and in FIG. 3 (c).
- a thin film is formed on the substrate 10 by processing while alternately switching between the case where the setting is made and the case where the setting is made.
- the surface of the substrate 10 has a flat film thickness distribution in which the film thicknesses of the central portion and the outer peripheral portion are substantially the same, and the step coverage is provided inside the pattern 1210 of the trench structure formed on the substrate 10. A good thin film can be formed.
- a trench structure pattern 1210 having a cross-sectional shape as shown in FIG. 9 is formed on a part of the substrate 10.
- the vertical drive motor 410 is driven to rotate the ball screw 411 in a state where the board carry-in inlet 310 is closed and the inside of the storage chamber 500 is sealed to the outside.
- the screw boat 300 is raised, and the boat 300 is carried into the inside of the reaction tube 110 from the storage chamber 500.
- the height of the boat 300 lifted by the vertical drive motor 410 is set from the nozzle 120 to the inside of the reaction tube 110 through the hole 123 formed in the tube wall of the reaction tube 110 based on the process recipe read in S701. Difference from the blowout position (height of the tip portion of the nozzle 120) of the supplied gas The difference in the position in the height direction is set to the state shown in FIG. 3 (b) or FIG. 3 (c).
- Step S704 Based on the recipe read in step S704 in a state of being evacuated by a vacuum pump (not shown), the inside of the reaction tube 110 is evacuated by a heater 101 so that the inside of the reaction tube 110 has a desired pressure (vacuum degree). Heat. At this time, the amount of electricity supplied to the heater 101 is feedback-controlled based on the temperature information detected by the temperature sensor (not shown) so that the inside of the reaction tube 110 has a desired temperature distribution. The heating of the inside of the reaction tube 110 by the heater 101 is continuously performed at least until the treatment for the substrate 10 is completed.
- the relative positions (heights) of the surfaces of the substrate 10 mounted on the boat 300 with respect to the holes 121 of the nozzle 120 and the partition plate 203 of the partition plate support portion 200 are adjusted to form the partition plate 203 and the substrate 10. It is set to be G2 shown in FIG. 3 (c), where the interval between the two is relatively wide. However, when the distance between the partition plate 203 and the substrate 10 is set to G2 in the temperature adjusting step of S704, the height of the surface of the substrate 10 is left as it is.
- the G2 spacing is adjusted to be, for example, 14 to 30 mm.
- the notation of a numerical range such as "14 to 30 mm" in the present specification means that the lower limit value and the upper limit value are included in the range. Therefore, "14 to 30 mm” means “14 mm or more and 30 mm or less". The same applies to other numerical ranges.
- the height of the surface of the substrate 10 is set by operating the boat vertical mechanism 420 equipped with a linear actuator based on the process recipe read in step S701 to drive the shaft 421 in the vertical direction.
- the raw material gas is introduced into the reaction tube 110 from the hole 121 of the nozzle 120 in a state where the flow rate is adjusted, and the first layer 1220 is formed on the surface of the substrate 10. do. do. Of the raw material gases supplied to the reaction tube 110, the gas that did not contribute to the reaction on the surface of the substrate 10 is exhausted from the exhaust pipe 130.
- the raw material gas is supplied to the substrate 10 mounted on the boat 300.
- the flow rate of the raw material gas to be supplied is adjusted by a mass flow controller (MFC) (not shown).
- MFC mass flow controller
- the inert gas is supplied to the inside of the reaction tube 110 as a carrier gas together with the raw material gas, and is exhausted from the exhaust pipe 130.
- Examples of the raw material gas include monochlorosilane (SiH 3 Cl, abbreviated as MCS) gas, dichlorosilane (SiH 2 Cl 2 , abbreviated as DCS) gas, trichlorosilane (SiHCl 3 , abbreviated as TCS) gas, and tetrachlorosilane (SiCl).
- MCS monochlorosilane
- DCS dichlorosilane
- trichlorosilane SiHCl 3 , abbreviated as TCS
- SiCl tetrachlorosilane
- Chlorosilane-based gas such as hexachlorodisilane gas (Si 2 Cl 6 , abbreviation: HCDS) gas, octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS) gas can be used.
- the raw material gas examples include fluorosilane gas such as tetrafluorosilane (SiF 4 ) gas and difluorosilane (SiH 2 F 2 ) gas, tetrabromosilane (SiBr 4 ) gas, and dibromosilane (SiH 2 Br 2 ).
- fluorosilane gas such as tetrafluorosilane (SiF 4 ) gas and difluorosilane (SiH 2 F 2 ) gas
- tetrabromosilane (SiBr 4 ) gas tetrabromosilane
- SiH 2 Br 2 dibromosilane
- a bromosilane-based gas such as a gas
- an iodosilane-based gas such as a tetraiodosilane (SiI 4 ) gas and a diiodosilane (SiH 2 I 2 ) gas
- SiI 4 tetraiodosilane
- Examples of the raw material gas include tetrax (dimethylamino) silane (Si [N (CH 3 ) 2 ] 4 , abbreviation: 4DMAS) gas and tris (dimethylamino) silane (Si [N (CH 3 ) 2 ] 3 ].
- H abbreviation: 3DMAS) gas, bis (diethylamino) silane (Si [N (C 2 H 5 ) 2 ] 2 H 2 , abbreviation: BDEAS) gas, bis (territory butylamino) silane (SiH 2 [NH (C) 4 H 9 )] 2.
- Aminosilane-based gas such as BTBAS) gas can also be used. As the raw material gas, one or more of these can be used.
- inert gas for example, nitrogen (N 2 ) gas can be used, and in addition, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenone (Xe) gas and the like can be used. Noble gas can be used.
- the carrier gas one or more of these can be used.
- the carrier gas is supplied to the inside of the reaction tube 110 via the nozzle 120 and exhausted from the exhaust pipe 130.
- the temperature of the heater 101 is set so that the temperature of the substrate 10 is in the range of, for example, 250 to 550 ° C.
- the raw material gas is between the substrate 10 and the partition plate 203 in a state where the distance G2 between the substrate 10 and the partition plate 203 is increased and the distance between the substrate 10 and the partition plate 203 is set to be wide.
- the flow velocity of the raw material gas flowing between the substrate 10 and the partition plate 203 becomes relatively slow.
- the raw material gas is easily supplied to the vicinity of the bottom portion 1212 of the trench structure pattern 1210, and as shown in FIG. 10, includes not only the surface of the substrate 10 but also the inner bottom portion 1212 of the trench structure pattern 1210.
- the first layer 1220 made of the raw material gas is also formed in the region.
- the raw material gas which is the raw material gas
- the raw material gas is supplied to the inside of the reaction tube 110 via the nozzle 120 for a predetermined time, and after the first layer 1220 is formed on the bottom 1212 of the pattern 1210 of the trench structure of the substrate 10, the raw material gas is used. Stop supply.
- the inside of the reaction tube 110 is evacuated by a vacuum pump (not shown), and the raw material gas remaining in the reaction tube 110 after contributing to the formation of the unreacted or thin film 1220 is removed from the inside of the reaction tube 110.
- the supply of the carrier gas (inert gas) from the nozzle 120 to the inside of the reaction tube 110 is maintained.
- the carrier gas acts as a purge gas, and can enhance the effect of removing the raw material gas remaining inside the reaction tube 110 after contributing to the formation of the unreacted or first layer 1220 from the inside of the reaction tube 110.
- a rare gas such as nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas can be used.
- step S7054 It is checked whether the cycle of sequentially performing the steps from the detailed step S7051 to the step S7053 described in step S705 to S7059 is performed a predetermined number of times (n times), and if the predetermined collection is executed, the process proceeds to step S706.
- step S7055 the process proceeds to step S7055.
- reaction gas supply S7055
- the reaction gas is supplied from the nozzle 120 to the inside of the reaction tube 110 while the rotation drive motor 430 is driven to maintain the rotation of the boat 300, which contributes to the reaction.
- the reaction gas that has not been exhausted is exhausted from the exhaust pipe 130.
- the flow rate of the reaction gas specifically supplied is adjusted by a mass flow controller (not shown).
- the temperature of the heater 101 at this time is set to the same temperature as that of the raw material gas supply step.
- the reaction gas flowing between the substrate 10 and the partition plate 203 is set.
- the flow velocity of is relatively fast.
- the reaction gas is supplied to the vicinity of the bottom portion 1212 of the pattern 1210 of the trench structure, similarly to the raw material gas.
- the reaction gas is supplied to the surface of the substrate 10 in a heated and activated state, so that the first layer formed inside the pattern 1210 of the trench structure including the surface of the substrate 10 and the bottom portion 1212 by the raw material gas.
- the surface of 1220 is nitrided to form the second layer 1221 as shown in FIG.
- An NH termination is formed on the surface of the second layer 1221.
- hydrogen nitride-based gas such as diimide (N 2 H 2 ) gas, ammonia (NH 3 ), hydrazine (N 2 H 4 ) gas, and N 3 H 8 gas can be used.
- step S7056 After the reaction gas is supplied from the nozzle 120 to the inside of the reaction tube 110 for a certain period of time, the supply of the reaction gas from the nozzle 120 to the inside of the reaction tube 110 is stopped. Then, by the same processing procedure as in step S7053, the inside of the reaction tube 110 is evacuated by a vacuum pump (not shown), and the unreacted reaction gas and reaction by-products remaining inside the reaction tube 110 are discharged into the reaction tube. Exclude from the inside of 110.
- the inert gas is supplied from the nozzle 120 to the inside of the reaction tube 110.
- the inert gas acts as a purge gas, and can enhance the effect of removing the unreacted reaction gas remaining inside the reaction tube 110 or the reaction gas after contributing to the formation of the second layer 1221 from the inside of the reaction tube 110.
- the inert gas the same gas as the gas described in S7052 can be used.
- step S7057 the position of the substrate 10 is raised with respect to the partition plate 203, the distance between the partition plate 203 and the substrate 10 is made narrower than that of G2, and the position is set to G1 as shown in FIG. 3 (b).
- G2 This is based on the process recipe read in step S701, by operating the boat up / down mechanism 420 equipped with a linear actuator to drive the shaft 421 upward, and the hole 121 of the nozzle 120 and the partition plate support portion 200. This is done by switching the relative position (height) of the surface of the substrate 10 mounted on the boat 300 with respect to the partition plate 203 from the first height to the second height.
- the G1 spacing is adjusted to be 3 to 14 mm.
- the film formation inhibitory gas which is the film formation inhibitory gas
- the film formation inhibitory gas is transferred from the nozzle 120 to the reaction tube 110 in a state where the rotation drive motor 430 is driven to maintain the rotation of the boat 300.
- the film-forming inhibitory gas that is supplied to the inside and does not contribute to the reaction is exhausted from the exhaust pipe 130.
- the film forming inhibitory gas is supplied to the substrate 10.
- the flow rate of the film-forming inhibitory gas to be supplied is adjusted by a mass flow controller (not shown).
- the temperature of the heater 101 at this time is maintained at the same temperature as that of the raw material gas supply step and the reaction gas supply step, which are the raw material gas.
- the film forming inhibitory gas flowing between the substrate 10 and the partition plate 203 is set.
- the flow velocity is slower than in the case of the raw material gas and the reaction gas, and the film formation inhibitory gas is less likely to be supplied to the vicinity of the bottom 1212 of the pattern 1210 of the trench structure than the raw material gas and the reaction gas.
- the film-forming inhibitory gas When the film-forming inhibitory gas is flowed in such a state, the supplied film-forming inhibitory gas reacts with the second layer 1221 formed on the surface of the substrate 10 on the surface of the substrate 10 to reach the surface of the substrate 10. A layer of Cl-terminated 1230 is formed.
- HCl hydrogen chloride
- Cl 2 chlorine
- the film forming inhibitory gas reaches only the vicinity of the inlet portion 1211 and does not reach the bottom portion 1212 of the trench structure pattern 1210.
- the Cl terminal 1230 is not formed on the bottom 1212 of the pattern 1210 of the trench structure, and the NH terminal on the surface of the second layer 1221 is exposed.
- the carrier gas from the nozzle 120 is supplied to the inside of the reaction tube 110.
- the carrier gas acts as a purge gas, and can enhance the effect of removing the film-forming inhibitory gas remaining inside the reaction tube 110 after contributing to the formation of the unreacted or Cl-terminated 1230 from the inside of the reaction tube 110.
- a third layer 1222 made of a raw material gas is formed on the surface of the substrate 10 including the bottom 1212 of the pattern 1210 of the trench structure.
- the Cl-terminated 1230 formed on the surface of the substrate 10 or near the entrance portion 1211 of the trench structure pattern 1210 serves as an inhibitor (deposition inhibition layer) against the formation of the layer containing Si formed by the raw material gas. It works.
- the Cl terminal 1230 acts as an inhibitor against the formation of the layer containing Si, so that the surface of the substrate 10 on which the Cl terminal 1230 is formed and the vicinity of the entrance portion 1211 of the trench structure pattern 1210 are the first.
- the film formation rate of the three layers 1222 becomes slow. As a result, it is possible to delay the growth of the third layer 1222 from blocking the vicinity of the entrance portion 1211 of the pattern 1210 of the trench structure.
- the third layer 1222 is formed without reducing the film forming speed.
- the growth rate of the third layer 1222 at the entrance portion 1211 is generally faster than the growth rate in the vicinity of the bottom portion 1212. .. Therefore, when the bottom portion 1212 of the trench structure pattern 1210 is deep, the entrance portion 1211 of the trench structure pattern 1210 is blocked by the third layer 1222 before the third layer 1222 is sufficiently formed in the vicinity of the bottom portion 1212. Will end up.
- the Cl terminal 1230 is formed on the surface of the substrate 10 and near the entrance portion 1211 of the trench structure pattern 1210 as described above, as shown in FIG. 13, the trench structure pattern 1210 is formed.
- a third layer 1222 having a sufficient film thickness to form a circuit pattern may be formed on the inner surface of the pattern 1210 of the trench structure including the bottom portion 1212 before the vicinity of the entrance portion 1211 is blocked. It was possible to form the third layer 1222 having sufficient step coverage on the inner surface of the pattern 1210 of the trench structure as compared with the case where the Cl terminal 1230 was not formed.
- the growth of the third layer 1222 near the entrance portion 1211 of the trench structure pattern 1210 is delayed, and the third layer 1222 is grown near the bottom portion 1212 of the trench structure pattern 1210, whereby the trench structure is formed.
- the step coverage of the pattern 1210 can be improved as compared with the case where the Cl terminal 1230 is not formed.
- step S7054 The cycle of checking in S7054 and sequentially performing the above-mentioned detailed steps S7051 to S7053 and step S7055 to step S7-59 in step S705 is performed a predetermined number of times (n times).
- a new third layer 1222 is laminated on the second layer 1221 in which the NH termination is formed on the surface and partially covered with the Cl termination 1230 on the portion of the pattern 1210 of the trench structure of the substrate 10.
- the entrance portion 1211 of the pattern 1210 of the trench structure is blocked.
- the above cycle is preferably repeated a plurality of times, for example, preferably about 10 to 80 times, and more preferably about 10 to 15 times.
- the boat vertical mechanism 420 provided with the linear actuator to drive the shaft 421 in the vertical direction based on the process recipe read in step S701, the first layer 1220 is formed and the second layer 1221 is formed.
- the raw material gas supply step (S7052) and the reaction gas supply step (S7055) while switching between the distance G2 between the partition plate 203 and the substrate 10 at the time of formation and the distance G1 between the partition plate 203 and the substrate 10 at the time of forming the Cl terminal 1230.
- the third layer 1222 can be laminated and formed on the portion of the pattern 1210 of the trench structure of the substrate 10.
- the boat on which the substrate 10 is mounted by the rotary drive motor 430 in the raw material gas supply step (S7052), the reaction gas supply step (S7055), and the film formation inhibition gas supply step (S7057), the boat on which the substrate 10 is mounted by the rotary drive motor 430.
- the example of rotating the 300 has been described, it may be continuously rotated during the residual gas exhaust step (S7053 and S7056, S7058).
- N2 gas is supplied from the nozzle 120 to the inside of the reaction pipe 110 and exhausted from the exhaust pipe 130.
- the N 2 gas acts as a purge gas, whereby the inside of the reaction tube 110 is purged with the inert gas, and the gas and by-products remaining inside the reaction tube 110 are removed from the inside of the reaction tube 110.
- the present embodiment is not limited to this.
- a SiO 2 film, a Si 3N 4 ( silicon nitride) film, or a TiN (titanium nitride) film can be formed.
- it is not limited to these films.
- a gas containing at least one of the above-mentioned halogen-containing gas, halogen element, amino group, cyclopenta group, oxygen (O), carbon (C), alkyl group, etc. is used. Can be used.
- the growth of the third layer 1222 near the entrance portion 1211 of the trench structure pattern 1210 is delayed so that the third layer 1222 grows near the bottom portion 1212 of the trench structure pattern 1210. It has become possible to improve the step coverage of the pattern 1210 of the trench structure as compared with the case where the Cl terminal 1230 is not formed.
- the film forming process has been described as an application example of the present disclosure, the present disclosure is not limited to this, and can be applied to the etching process.
- the distance between the substrate 10 and the upper partition plate 203 of the substrate 10 is narrowed by operating the boat vertical mechanism 420 equipped with a linear actuator to drive the shaft 421 in the vertical direction.
- the E treatment among the DED (Depo Etch Depo) treatments becomes possible.
- the DED process means a process of repeatedly performing a film forming process and an etching process to form a predetermined film.
- the above-mentioned E treatment means an etching treatment.
- Substrate processing device 101 Heater 110 .
- Reaction tube 120 Gas supply nozzle 121 ... Hole 200 .
- Partition plate support part 203 ... Partition plate 260 .
- Controller 300 ... Board support (boat) 400 ... Vertical drive mechanism 500 ... Storage room.
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Abstract
Description
基板処理装置100は、鉛直方向に延びた円筒形状の反応管110と、反応管110の外周に設置された加熱部(炉体)としてのヒータ101と、ガス供給部を構成するガス供給用のノズル120を備える。ヒータ101は上下方向に複数のブロックに分割されて個々のブロックごとに温度を設定することが可能なゾーンヒータにより構成されている。
チャンバ180は反応管110の下部にマニホールド111を介して設置され、収納室500を備えている。収納室500では、基板搬入口310を介して図示していない移載機により基板10を基板支持具(基板支持部、ボート)300に載置(搭載)したり、移載機により基板10を基板支持具300から取り出すことが行われる。
基板支持部は、少なくとも基板支持具300で構成され、収納室500の内部で基板搬入口310を介して図示していない移載機により基板10の移し替えを行ったり、移し替えた基板10を反応管110の内部に搬送して基板10の表面に薄膜を形成する処理を行ったりする。なお、基板支持部に、仕切板支持部200を含めて考えても良い。
図1に示す様に、基板処理装置100は、各部の動作を制御するコントローラ260と接続されている。
次に、図1及び図2で説明した基板処理装置を用いて基板上に膜を形成する基板処理工程(成膜工程)について図7Aと図7B及び図8乃至図13を用いて説明する。
を行う。
(c)反応管110の内部に収容された基板10に対して、ガス供給用のノズル120から反応を供給して、原料ガスにより形成した第1層1220と反応させる工程と、(d)反応管110の内部の反応ガスを含む残留ガスを除去する工程と、
を実行する。
まず、CPU260aは、記憶装置260cに記憶されたプロセスレシピ及び関連するデータベースを読み込んで、プロセス条件を設定する。記憶装置260cに替えて、ネットワークを介してプロセスレシピ及び関連するデータベースを入手するようにしてもよい。
ボート300を収納室500に収納した状態で、上下駆動用モータ410を駆動してボールねじ411を回転駆動し、ボート300をピッチ送りして、収納室500の基板搬入口310を介して、新たな基板10を1枚ずつボート300に搭載して保持する。
ボート300が反応管110の内部に搬入された状態で、反応管110の内部を図示していない真空ポンプによって排気管130から真空排気し、反応管110の内部が所望の圧力となるように調整する。
図示していない真空ポンプによって真空排気された状態で、ステップS704で読み込んだレシピに基づいて、反応管110の内部が所望の圧力(真空度)となるように反応管110の内部をヒータ101によって加熱する。この際、反応管110の内部が所望の温度分布となるように、図示していない温度センサが検出した温度情報に基づきヒータ101への通電量がフィードバック制御される。ヒータ101による反応管110の内部の加熱は、少なくとも基板10に対する処理が完了するまでの間は継続して行われる。
続いて、トレンチ構造のパターン1210の内部を含む基板10の表面に、Siを含む層を積層して形成するために、図7Bに示すように、以下のような詳細なステップを実行する。
(基板と仕切板の間隔をG2に設定):S7051
次に、回転駆動用モータ430を回転駆動して、回転伝達ベルト432を介して支持具440を回転させて仕切板支持部200とボート300とを回転させる。
反応管110の内部に所定の時間ノズル120を介して原料ガスである原料ガスを供給して基板10のトレンチ構造のパターン1210の底部1212にも第1層1220が形成された後、原料ガスの供給を停止する。このとき、図示していない真空ポンプにより反応管110の内部を真空排気し、反応管110内に残留する未反応もしくは薄膜1220形成に寄与した後の原料ガスを反応管110の内部から排除する。
ステップS705における上記した詳細ステップS7051~ステップS7053を含むS7059までのステップを順に行うサイクルを所定回数(n回)行ったかをチェックし、所定回収実行した場合にはステップS706に進む。
反応管110の内部の残留ガスを除去した後、回転駆動用モータ430を駆動してボート300の回転を維持した状態で、反応ガスをノズル120から反応管110の内部に供給し、反応に寄与しなかった反応ガスを排気管130から排気する。これにより、基板10に対して反応ガスが供給されることとなる。具体的に供給する反応ガスの流量は、図示していないマスフローコントローラにより調整される。このときのヒータ101の温度は、原料ガス供給ステップと同様の温度に設定する。
反応ガスをノズル120から反応管110の内部に一定の時間供給した後、ノズル120から反応管110の内部への反応ガスの供給を停止する。そして、ステップS7053と同様の処理手順により、図示していない真空ポンプにより反応管110の内部を真空排気して、反応管110の内部に残留する未反応の反応ガスや反応副生成物を反応管110の内部から排除する。
次に、仕切板203に対して基板10の位置を上げて仕切板203と基板10の間隔をG2よりも狭くして、図3(b)に示すように、G1に設定する。G2これは、ステップS701で読み込んだプロセスレシピに基づいてリニアアクチュエータを備えたボート上下機構420を作動させて軸421を上方向に駆動させて、ノズル120の穴121、及び仕切板支持部200の仕切板203に対するボート300に搭載された基板10の表面の相対的な位置(高さ)を第1の高さから第2の高さに切り替えることにより行われる。なお、G1の間隔は、3~14mmとなるように調整される。
反応管110の内部の残留ガスを除去した後、回転駆動用モータ430を駆動してボート300の回転を維持した状態で、成膜阻害ガスである成膜阻害ガスをノズル120から反応管110の内部に供給し、反応に寄与しなかった成膜阻害ガスを排気管130から排気する。これにより、基板10に対して成膜阻害ガスが供給されることとなる。供給する成膜阻害ガスの流量は、図示していないマスフローコントローラにより調整される。
トレンチ構造のパターン1210の部分にCl終端1230を形成した後、ノズル120から反応管110の内部への成膜阻害ガスの供給を停止する。そして、ステップS7053と同様の処理手順により、反応管110の内部に残留する未反応もしくはCl終端1230の形成に寄与した後の成膜阻害ガスや反応副生成物を反応管110の内部から排除する。
成膜阻害ガスの残留ガスや反応副生成物の反応管110の内部からの排出が完了した後、処理はS7051に戻って、仕切板203に対する基板10の位置を下降させて仕切板203と基板10の間隔をG2に設定する。
S7054でチェックして、ステップS705における上記した詳細ステップS7051~ステップS7053とステップS7055~ステップS7-59までを順に行うサイクルを所定回数(n回)行う。これにより、基板10のトレンチ構造のパターン1210の部分に、表面にNH終端が形成され一部がCl終端1230で覆われた第2層1221の上に新たな第3層1222を積層し、この第3層1222の一部にCl終端を形成し、さらにその上に新たな第3層1222を積層することを順次繰り返し行うことにより、トレンチ構造のパターン1210の入り口部1211が塞がれてしまう前に、トレンチ構造のパターン1210の底部1212の付近に、第3層1222として信号回路を形成するのに十分な厚さ積層することができる。上述のサイクルは、複数回繰り返すのが好ましく、例えば10~80回ほど行うことが好ましく、より好ましくは10~15回ほど行う。
上記ステップS705の一連の工程を所定の回数繰り返して実行した後、ノズル120からN2ガスを反応管110の内部へ供給し、排気管130から排気する。N2ガスはパージガスとして作用し、これにより反応管110の内部が不活性ガスでパージされ、反応管110の内部に残留するガスや副生成物が反応管110内から除去される。
その後、上下駆動用モータ410を駆動してボールねじ411を逆方向に回転駆動し、仕切板支持部200とボート300を反応管110から下降させて、表面に所定の厚さの薄膜が形成された基板10を搭載したボート300を収納室500に搬送する。
収納室500において、ボート300から薄膜が形成された基板10を基板搬入口310を介して収納室500の外部に取り出した後、ヒータ101による加熱を停止させた状態で収納室500内部の温度を降温させて基板10の処理を終了する。
Claims (12)
- 基板を支持する基板支持具と、当該基板支持具に支持された前記基板の上部に配置された上部仕切板とを支持する仕切板支持具と、を有する基板保持具を処理室に収容する工程と、
前記基板と前記上部仕切板との距離を第1の間隔にして、ガス供給口から前記基板に第1ガスを供給する第1ガス供給工程と、
前記基板と前記上部仕切板との距離を第2の間隔にして、ガス供給口から前記基板に第2ガスを供給する第2ガス供給工程と、
を有する半導体装置の製造方法。
- 前記第1ガス供給工程では、前記第1の間隔が、前記第2の間隔より広い請求項1に記載の半導体装置の製造方法。
- 前記第2ガス供給工程では、前記第2の間隔が、前記第1の間隔より狭い請求項1又は請求項2に記載の半導体装置の製造方法。
- 前記第1ガス供給工程では、前記基板が、ガス供給口よりも下部に配置される請求項1~請求項3のいずれか一項に記載の半導体装置の製造方法。
- 前記第2ガス供給工程では、前記基板が、ガス供給口よりも上部に配置される請求項1~請求項4のいずれか一項に記載の半導体装置の製造方法。
- 前記基板支持具は、複数の前記基板を上下方向に所定の間隔をあけて支持し、前記仕切板支持具は、複数の前記基板の間それぞれに前記上部仕切板を支持する請求項1~請求項5のいずれか一項に記載の半導体装置の製造方法。
- 前記第2ガスは、成膜阻害ガスとして用いられる請求項1~請求項6のいずれか一項に記載の半導体装置の製造方法。
- 前記第1ガス供給工程と前記第2ガス供給工程との間に、前記基板と前記上部仕切板との距離を前記第1の間隔に維持した状態で、ガス供給口から前記基板に第3ガスを供給する第3ガス供給工程を更に有する請求項1~請求項7のいずれか一項に記載の半導体装置の製造方法。
- 前記第1ガスは原料ガス、前記第3ガスは反応ガスである請求項8に記載の半導体装置の製造方法。
- 前記基板には、トレンチが形成されている請求項1~請求項9のうちいずれか一項に記載の半導体装置の製造方法。
- 基板を支持する基板支持具と、当該基板支持具に支持された前記基板の上部に配置された上部仕切板を支持する仕切板支持具と、を有する基板保持具と、
前記基板支持具に前記基板を支持した状態で前記基板保持具を収容する処理室と、
前記基板保持具を上下方向に駆動して前記処理室に対して出し入れをする第1の駆動部と、
前記基板支持具又は前記仕切板支持具のいずれか一方を前記上下方向に駆動して前記基板支持具に支持された前記基板と前記仕切板支持具に支持された仕切板との間隔を変化させる第2駆動部と、
前記処理室の内部に収容された前記基板に対してガスを供給するガス供給部と、
前記基板保持具を前記処理室に収容する処理と、前記基板と前記上部仕切板との距離を第1の間隔にして、ガス供給部に設けられたガス供給口から前記基板に第1ガスを供給する第1ガス供給処理と、前記基板と前記上部仕切板との距離を第2の間隔にして、ガス供給部に設けられたガス供給口から前記基板に第2ガスを供給する第2ガス供給処理と、を行うように、前記第2駆動部と前記ガス供給部とを制御することが可能なよう構成される制御部と、
を有する基板処理装置。 - 基板を支持する基板支持具と、当該基板支持具に支持された前記基板の上部に配置された上部仕切板とを支持する仕切板支持具と、を有する基板保持具を基板処理装置の処理室に収容する手順と、
前記基板と前記上部仕切板との距離を第1の間隔にして、ガス供給口から前記基板に第1ガスを供給する第1ガス供給手順と、
前記基板と前記上部仕切板との距離を第2の間隔にして、ガス供給口から前記基板に第2ガスを供給する第2ガス供給手順と、
をコンピュータにより前記基板処理装置に実行させるプログラム。
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