CN101034659A - 基板的制造方法及基板处理装置 - Google Patents

基板的制造方法及基板处理装置 Download PDF

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Publication number
CN101034659A
CN101034659A CN200710085723.6A CN200710085723A CN101034659A CN 101034659 A CN101034659 A CN 101034659A CN 200710085723 A CN200710085723 A CN 200710085723A CN 101034659 A CN101034659 A CN 101034659A
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CN
China
Prior art keywords
substrate
molybdenum
electrode layer
layer
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200710085723.6A
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English (en)
Chinese (zh)
Inventor
薮下宏二
林正美
山部贵人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN101034659A publication Critical patent/CN101034659A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
CN200710085723.6A 2006-03-08 2007-03-08 基板的制造方法及基板处理装置 Pending CN101034659A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006062495A JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置
JP2006062495 2006-03-08

Publications (1)

Publication Number Publication Date
CN101034659A true CN101034659A (zh) 2007-09-12

Family

ID=38588105

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200710085723.6A Pending CN101034659A (zh) 2006-03-08 2007-03-08 基板的制造方法及基板处理装置

Country Status (4)

Country Link
JP (1) JP2007242848A (https=)
KR (1) KR100879038B1 (https=)
CN (1) CN101034659A (https=)
TW (1) TW200735373A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5794194B2 (ja) * 2012-04-19 2015-10-14 東京エレクトロン株式会社 基板処理装置
KR102436641B1 (ko) 2015-10-23 2022-08-26 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081954B2 (ja) * 1995-06-13 2000-08-28 日本プレシジョン・サーキッツ株式会社 Ｍｏｓ型トランジスタの製造方法
US5935648A (en) 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
US6291282B1 (en) * 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
KR100604804B1 (ko) * 2000-04-17 2006-07-28 삼성전자주식회사 몰리브데늄 박막 및 실리콘 박막을 포함하는 다층막 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法

Also Published As

Publication number Publication date
KR100879038B1 (ko) 2009-01-15
TWI342071B (https=) 2011-05-11
TW200735373A (en) 2007-09-16
KR20070092121A (ko) 2007-09-12
JP2007242848A (ja) 2007-09-20

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Open date: 20070912