TWI342071B - - Google Patents

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Publication number
TWI342071B
TWI342071B TW096102450A TW96102450A TWI342071B TW I342071 B TWI342071 B TW I342071B TW 096102450 A TW096102450 A TW 096102450A TW 96102450 A TW96102450 A TW 96102450A TW I342071 B TWI342071 B TW I342071B
Authority
TW
Taiwan
Prior art keywords
substrate
layer
plasma
molybdenum
atmospheric
Prior art date
Application number
TW096102450A
Other languages
English (en)
Chinese (zh)
Other versions
TW200735373A (en
Inventor
Yabushita Koji
Hayashi Masami
Yamabe Takahito
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200735373A publication Critical patent/TW200735373A/zh
Application granted granted Critical
Publication of TWI342071B publication Critical patent/TWI342071B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
TW096102450A 2006-03-08 2007-01-23 Substrate manufacturing method and substrate processing device TW200735373A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006062495A JP2007242848A (ja) 2006-03-08 2006-03-08 基板の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
TW200735373A TW200735373A (en) 2007-09-16
TWI342071B true TWI342071B (https=) 2011-05-11

Family

ID=38588105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102450A TW200735373A (en) 2006-03-08 2007-01-23 Substrate manufacturing method and substrate processing device

Country Status (4)

Country Link
JP (1) JP2007242848A (https=)
KR (1) KR100879038B1 (https=)
CN (1) CN101034659A (https=)
TW (1) TW200735373A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI513853B (zh) * 2012-04-19 2015-12-21 東京威力科創股份有限公司 基板處理裝置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102436641B1 (ko) 2015-10-23 2022-08-26 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CN106711231A (zh) * 2017-01-13 2017-05-24 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示基板及其制备方法
WO2018181296A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 チャネルエッチ型薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081954B2 (ja) * 1995-06-13 2000-08-28 日本プレシジョン・サーキッツ株式会社 Ｍｏｓ型トランジスタの製造方法
US5935648A (en) 1997-03-28 1999-08-10 The United States Of America As Represented By The Secretary Of The Air Force High surface area molybdenum nitride electrodes
US6291282B1 (en) * 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
KR100604804B1 (ko) * 2000-04-17 2006-07-28 삼성전자주식회사 몰리브데늄 박막 및 실리콘 박막을 포함하는 다층막 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI513853B (zh) * 2012-04-19 2015-12-21 東京威力科創股份有限公司 基板處理裝置

Also Published As

Publication number Publication date
KR100879038B1 (ko) 2009-01-15
TW200735373A (en) 2007-09-16
CN101034659A (zh) 2007-09-12
KR20070092121A (ko) 2007-09-12
JP2007242848A (ja) 2007-09-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees