CN1010073B - 固体摄象器 - Google Patents

固体摄象器

Info

Publication number
CN1010073B
CN1010073B CN87102223A CN87102223A CN1010073B CN 1010073 B CN1010073 B CN 1010073B CN 87102223 A CN87102223 A CN 87102223A CN 87102223 A CN87102223 A CN 87102223A CN 1010073 B CN1010073 B CN 1010073B
Authority
CN
China
Prior art keywords
mentioned
wiring
solid state
state imager
stating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN87102223A
Other languages
English (en)
Chinese (zh)
Other versions
CN87102223A (zh
Inventor
滨崎正治
石川贵久枝
贺川能明
玲木智行
米本和也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN87102223A publication Critical patent/CN87102223A/zh
Publication of CN1010073B publication Critical patent/CN1010073B/zh
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
CN87102223A 1986-03-19 1987-03-19 固体摄象器 Expired CN1010073B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61061785A JPH0763090B2 (ja) 1986-03-19 1986-03-19 固体撮像装置
JP61785/86 1986-03-19

Publications (2)

Publication Number Publication Date
CN87102223A CN87102223A (zh) 1987-09-30
CN1010073B true CN1010073B (zh) 1990-10-17

Family

ID=13181087

Family Applications (1)

Application Number Title Priority Date Filing Date
CN87102223A Expired CN1010073B (zh) 1986-03-19 1987-03-19 固体摄象器

Country Status (8)

Country Link
US (1) US4780765A (de)
EP (2) EP0238343B1 (de)
JP (1) JPH0763090B2 (de)
KR (1) KR950014688B1 (de)
CN (1) CN1010073B (de)
CA (1) CA1270555A (de)
DE (2) DE3752341T2 (de)
HK (1) HK1007852A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4928003A (en) * 1988-07-15 1990-05-22 Tektronix, Inc. Charge-coupled device for detecting spatial variation in the intensity of electromagnetic radiation
US5122850A (en) * 1989-09-05 1992-06-16 Eastman Kodak Company Blooming control and reduced image lag in interline transfer CCD area image sensors
JPH07177427A (ja) * 1993-12-20 1995-07-14 Victor Co Of Japan Ltd ビデオカメラ
US6025585A (en) * 1996-11-01 2000-02-15 The Regents Of The University Of California Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
SG70128A1 (en) * 1997-10-06 2000-01-25 Canon Kk Method of driving image sensor
DE10253122B4 (de) 2002-11-13 2010-05-06 Carl Freudenberg Kg Anordnung zur Erfassung der Drehbewegung einer Welle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
US4593303A (en) * 1981-07-10 1986-06-03 Fairchild Camera & Instrument Corporation Self-aligned antiblooming structure for charge-coupled devices
JPS5928772A (ja) * 1982-08-11 1984-02-15 Sony Corp 固体撮像装置の駆動方法
JPS59191378A (ja) * 1983-04-14 1984-10-30 Sony Corp 固体撮像素子の製法
JPS59197168A (ja) * 1983-04-22 1984-11-08 Sony Corp 固体撮像素子
JPS6118172A (ja) * 1984-07-04 1986-01-27 Sony Corp 固体撮像装置
JPS6156583A (ja) * 1984-08-27 1986-03-22 Sharp Corp 固体撮像装置
US4579626A (en) * 1985-02-28 1986-04-01 Rca Corporation Method of making a charge-coupled device imager
US4654683A (en) * 1985-08-23 1987-03-31 Eastman Kodak Company Blooming control in CCD image sensors

Also Published As

Publication number Publication date
DE3751097T2 (de) 1995-06-22
EP0238343B1 (de) 1995-03-01
JPS62219565A (ja) 1987-09-26
DE3751097D1 (de) 1995-04-06
EP0594559A3 (en) 1995-10-25
DE3752341D1 (de) 2001-12-20
KR870009483A (ko) 1987-10-27
CA1270555C (en) 1990-06-19
DE3752341T2 (de) 2002-07-11
US4780765A (en) 1988-10-25
HK1007852A1 (en) 1999-04-23
EP0594559B1 (de) 2001-11-14
JPH0763090B2 (ja) 1995-07-05
KR950014688B1 (ko) 1995-12-13
CA1270555A (en) 1990-06-19
EP0594559A2 (de) 1994-04-27
EP0238343A2 (de) 1987-09-23
EP0238343A3 (en) 1988-10-05
CN87102223A (zh) 1987-09-30

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
C17 Cessation of patent right
CX01 Expiry of patent term