CN101681954A - 含有隐埋集电极的光电晶体管 - Google Patents

含有隐埋集电极的光电晶体管 Download PDF

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CN101681954A
CN101681954A CN200880016260A CN200880016260A CN101681954A CN 101681954 A CN101681954 A CN 101681954A CN 200880016260 A CN200880016260 A CN 200880016260A CN 200880016260 A CN200880016260 A CN 200880016260A CN 101681954 A CN101681954 A CN 101681954A
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phototransistor
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李炳洙
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SK Hynix System IC Inc
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Abstract

提供了应用于图像传感器的光电晶体管。该光电晶体管通过包括隐埋集电极，能够减少产生在光电晶体管中的暗电流和提高弱光下的灵敏度，而且不会干扰相邻像素或产生图像延迟。在包括隐埋集电极的光电晶体管中，因为集电极不直接连接外部，所以该光电晶体管有低的暗电流和弱光下的高光敏特性。因为每个图像传感器都是独立的，所以不会产生像素间的干扰和图像延迟。

Description

含有隐埋集电极的光电晶体管
技术领域
本发明涉及应用于图像传感器的光电晶体管，更具体地，涉及这样的光电晶体管：其通过包括隐埋集电极，能够减少产生在光电晶体管中的暗电流和提高弱光下的灵敏度而且不会干扰相邻像素或产生图像延迟。
背景技术
图像传感器用来测量光的强度。高灵敏度的图像传感器是由大量的光电晶体管组成的。一般的，高灵敏度的图像传感器使用分层的或集成结构的光电晶体管。
光电晶体管产生的输出电流与入射光的强度成比例。被光电晶体管的集电极和基极之间的结区或者发射极和基极之间的结区吸收的光子产生聚集在PN结的电子空穴对。少数聚集在结区的载流子作为基极电流工作。基极电流是基于晶体管增益的多路复用，从而产生了集电极电流。另外，发射极电流是基极电流和集电极电流的总和，一般被用作输出电流。
图1示出了按照传统技术的层状结构的光电晶体管。
如图1所示，传统的有层状结构的光电晶体管是由n+发射极115，P型基极113，和N型集电极112组成。另外，传统的光电晶体管还可进一步包含位于发射极115和基极113之间的内部吸收层114。这个结构也可以由P+发射极，N型基极，和P型集电极组成。
在上述结构中，当电压加载在发射极115和集电极112上，弱电流在基极113和集电极112之间流动。但是，发射极115和基极113之间形成了势垒。电流受到势垒的限制。此时，当光子射入基极113上，电子空穴对(EHP)因光子而产生。电子移动到集电极112。空穴填补形成在基极113的势垒。
相应的，当空穴的数量增加，因势垒中聚集的空穴导致势垒的电势降低，因此产生了与降低的电势成比例的电流，从发射极流向集电极。以此方式电流流动。流向集电极的电流永远大于入射光导致的电子空穴对产生的光电流。上述过程可以由图2来理解。
图2示出了普通光电晶体管的运行机制。
如图2所示，当电压加载在发射极和集电极之间，在发射极和基极之间的区域中产生势垒(图2中的a)。此时，当光射入基极，电子移动到集电极，空穴聚集在势垒中。
势垒中聚集的空穴导致势垒的电势降低(图2中的b)。相应的，发射极中的电子可以很容易的移向集电极。这就是说，尽管聚集的空穴的数量少，但大的电流在流动。
因为传统层状结构的光电晶体管是通过使用沉积法或者晶体生长法制作的，所以应用制作传统光电晶体管的流程到制作互补金属氧化物半导体(CMOS)的普通流程非常受限。
此外，因为很难处理表面产生的暗电流，所以像素之间的改变很大。由此，很难应用传统的光电晶体管到需要统一像素特征的元件上，例如图像传感器。
图3示出了根据传统技术的集成结构的光电晶体管。
参照图3，拥有集成结构的传统光电晶体管由两个电极poly-1和ploy-1，n+发射极，p型基极，和n型阱或者集电极组成。另外，构建了像素间相互分离的场氧化层(FOX)。
此时，在一个负电压加载在发射极和一个负电压加载在电极poly-2的状态下，当光射入P型基极，电子空穴对产生了。在所产生的电子空穴对中的电子移向n型阱(集电极)，空穴遗留在基极中。由此，基极电势升高了。
当负电压加在电极poly-2上时，遗留在基极的空穴被拖动到电极poly-2。因此，和光的量成比例的空穴聚集在电极poly-2上。在这个状态下，因为只有因电子移动导致的电流存在，所以流动的电流很弱。这个状态被称作空穴积累状态。
读取图像的过程是通过在电极poly-2上加载正电压或者零电压而实现的。这就是说，当正电压加载在电极poly-2上时，基极和发射极之间的结向前偏移了。相应的，在空穴积累状态聚集的空穴因排斥力被挤出。此时，大部分空穴存在于发射极和集电极之间。相应的，因为基极和发射极之间的势垒由于空穴而降低了，因此与聚集在基极中的空穴数量相关的电流在发射极和集电极之间流动。
在强光射入如前所述结构的光电晶体管基极的情况下，光产生的空穴导致基极电势迅速升高，直到基极和发射极之间的结稍稍向前偏移。此外，在基极里产生的空穴填充电极poly-2下方的区域并且流向发射极。所以，在空穴积累状态下，大电流在电极poly-1中流动。该大电流被称作溢出。该大电流就是相邻像素的噪音。而且，因为难以移除暴露在强光中的像素的空穴，在有明亮光线介入的地方图像延迟产生了，从而降低图片质量。
另一方面，发射极通过表面连接到基极，基极通过表面接地。从而在弱光下可能产生暗电流。
发明内容
技术问题
本发明提供了一种应用于图像传感器的包含隐埋集电极的光电晶体管，这种光电晶体管只有小的暗电流所以在黑暗的状态下具有高灵敏度，而且没有相邻像素导致的噪音和明亮状态的图像延迟。
技术方案
根据本发明的一方面，提供了一种包括隐埋集电极的光电晶体管，该光电晶体管包括：第一传导的发射极；第二传导的基极；和隐埋在基极中的第一传导的集电极。
在本发明以上这个方面中，光电晶体管可以通过发射极同相邻的光电晶体管分离。
此外，集电极可以通过金属氧化物半导体(MOS)电连接。
此外，发射极可以被高浓度掺杂。
此外，基极可以被低浓度掺杂。
此外，集电极可以被低浓度掺杂。
附图说明
图1示出了按照传统技术的层状结构的光电晶体管；
图2示出了普通光电晶体管的运行机制；
图3示出了按照传统技术的集成结构的光电晶体管。
图4示出了根据本发明的一个实施方式的包括隐埋集电极的光电晶体管的结构；
图5示出了根据本发明的实施方式的包括隐埋集电极的光电晶体管的电子电势；
图6是示出了根据本发明实施方式的、包括隐埋集电极的光电晶体管阵列的顶部平面图；
图7是示出了根据图6的实施方式的就、包括隐埋集电极的光电晶体管阵列的横断面视图。
具体实施方式
下面，将通过参照附图描述本发明的示例性实施方式来详细地描述本发明。
图4示出了根据本发明的一个实施方式的包括隐埋集电极的光电晶体管的结构。图5示出了根据本发明的实施方式的包括隐埋集电极的光电晶体管的电子电势。
参照图4，根据本实施方式的包含隐埋集电极的光电晶体管包括在P+型衬底410上顺序形成的N+型发射极430、P型基极440和N型集电极450。
N+型发射极430围住了基极440和集电极450。N+型发射极430是和相邻光电晶体管分离的。此外，N型集电极450完全隐埋在P型基极440中。
集电极450通过传输晶体管的传输晶体管栅极460电连接。浮动扩散区470通过复位晶体管的栅极480连接恒定电压Vdd。发射极430连接发射极电压Vem。
图5中的(1)示出了连接图4所示集电极450中点a到P+衬底410中点b这条线上的掺杂浓度的例子。这就是说，集电极450在掺杂了高浓度的P+型掺杂物的衬底450上掺杂了低浓度的N型掺杂物。基极掺杂了低浓度的P型掺杂物。发射极430掺杂了高浓度的N+型掺杂物。
在如上所述的掺杂状态，外部电压没有加载的情况下，耗尽区或者空间电荷区在PN结区域形成了。相应的，图5中的(2)示出空间电荷的分布。
这里，在传输晶体管的栅极460电压Vtx、复位晶体管的栅极480电压Vrx和恒定电压Vdd是正的，零电压加载在发射极电压Vem上的情况下，耗尽区扩展了。图5中的(3)示出空间电荷的分布。
图5中的(4)示出因空间电荷分布而形成的电场。图5中的(5)示出因空间电荷分布而形成的传导带和价电带。
在上述的能量带中，当传输晶体管的栅极460电压Vtx固定为0，集电极450被隔离了。基极440和发射极430之间的势垒导致没有电流流动。
在这种状态，当光入射到发射极430和集电极450的区域的情况下，电子空穴对产生了。像普通的光电晶体管一样，电子移动到集电极450，空穴填充基极440中形成的势垒。聚集在基极440的空穴降低了基极440和发射极430之间的势垒的电势。于是，在大量的空穴聚集的情况下，大量的电子从发射极430引入集电极450。因此，因光子而产生的电子(光电子)和从发射极430移动到集电极450的电子聚集在集电极450中，集电极450中有比因入射光而产生的电子多得多的电子。
当接通传输晶体管时，聚集的电子移动到浮动扩散区470。通过和光电二极管同样的流程电子转换为电压。
因为包括上述结构的光电晶体管完全隐埋在基极中，表面产生的噪音不会导入集电极，从而降低了噪音。此外，因为光电晶体管与相邻像素被发射极隔开，所以能够减少发生在相邻像素间的干扰。再者，在光电晶体管暴露在强光中的情况下，被隔离的集电极的电压迅速变为0。由此，因为不再有电流，溢出不会发生。
图6是一个顶部平面图，示出了根据本发明的实施方式的包括隐埋集电极的光电晶体管阵列。图7是一个横断面视图，示出了根据图6的实施方式的包括隐埋集电极的光电晶体管阵列。
如图6所示，位于同一行的光电二极管的发射极631a和631b彼此电连接，位于不同行的光电二极管的发射极631a和632a通过行分离区域620相互隔离。
参照图7，和图6同样的布线，显示出沿着线条A-A，B-B，C-C的横截面结构。
这里，浅沟槽绝缘(STI)区可以被用作行分离区域。
发射极完全包括了单位像素的基极和集电极。该发射极是和邻近像素分离的。因此，电子在相邻像素间的移动不会产生干扰。
到目前为止，包括形成在P型衬底上的N+型发射极、P型基极、N型隐埋集电极的光电晶体管已经描述完了。然而，包括形成在N型衬底上的P+型发射极、N型基极、P型隐埋的集电极的光电晶体管也可以得到。
尽管结合本发明的示例性实施方案对本发明进行了详细地说明和描述，但本领域技术人员可以理解，在不脱离权利要求所限定的本发明的精神和范围的情况下，可对本发明进行各种形式上和细节上的变化。
工业应用性
在根据本发明的一个实施方式的包括隐埋集电极的光电晶体管中，因为隐埋的集电极通过金属氧化物半导体(MOS)电连接到外部，产生的噪音小了。另外，因为像素通过发射极区域与相邻像素隔离，所以相邻像素电子移动导致的普遍发生在普通图像传感器中的干扰不会产生。
此外，在光电晶体管暴露在强光中的情况下，当空穴被导入发射极，因为集电极是被隔离开的，所以集电极电压基本上为0。没有电流流动。这样，噪音不会出现在光电晶体管中。由于因强光而聚集的空穴通过设定发射极电压为负而被去除，因而有强光介入的图像的图像延迟不会产生。

Claims (6)

1.包含隐埋集电极的光电晶体管，所述光电晶体管包括：
第一传导的发射极；
第二传导的基极；和
隐埋在所述基极中的第一传导的集电极。
2.如权利要求1所述的光电晶体管，所述光电晶体管通过所述发射极与相邻的光电晶体管隔离。
3.如权利要求1所述的光电晶体管，其中，所述集电极通过金属氧化物半导体(MOS)电连接。
4.如权利要求1所述的光电晶体管，其中，所述发射极是高浓度掺杂的。
5.如权利要求1所述的光电晶体管，其中，所述基极是低浓度掺杂的。
6.如权利要求1所述的光电晶体管，其中，所述集电极是低浓度掺杂的。
CN200880016260A 2007-05-22 2008-05-07 含有隐埋集电极的光电晶体管 Pending CN101681954A (zh)

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